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产品型号BCV46T/R的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
BCV26; BCV46  
PNP Darlington transistors  
Product data sheet  
2004 Jan 13  
Supersedes data of 1999 Apr 08  
NXP Semiconductors  
Product data sheet  
PNP Darlington transistors  
BCV26; BCV46  
FEATURES  
PINNING  
PIN  
High current (max. 500 mA)  
Low voltage (max. 60 V)  
DESCRIPTION  
1
2
3
base  
Very high DC current gain (min. 10000).  
emitter  
collector  
APPLICATIONS  
Where very high amplification is required.  
DESCRIPTION  
handbook, halfpage  
PNP Darlington transistor in a SOT23 plastic package.  
NPN complements: BCV27 and BCV47.  
3
1
3
TR1  
TR2  
MARKING  
1
2
2
TYPE NUMBER  
BCV26  
MARKING CODE(1)  
MAM299  
FD*  
FE*  
Top view  
BCV46  
Note  
1. * = p : Made in Hong Kong.  
* = t : Made in Malaysia.  
* = W : Made in China.  
Fig.1 Simplified outline (SOT23) and symbol.  
ORDERING INFORMATION  
TYPE  
PACKAGE  
DESCRIPTION  
plastic surface mounted package; 3 leads  
NUMBER  
NAME  
VERSION  
BCV26  
BCV46  
SOT23  
2004 Jan 13  
2
 
NXP Semiconductors  
Product data sheet  
PNP Darlington transistors  
BCV26; BCV46  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
collector-base voltage  
BCV26  
40  
V
V
BCV46  
80  
VCES  
collector-emitter voltage  
BCV26  
VBE = 0  
30  
V
V
V
BCV46  
60  
VEBO  
IC  
ICM  
IB  
emitter-base voltage  
collector current (DC)  
peak collector current  
base current (DC)  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
open collector  
10  
500  
800  
100  
250  
mA  
mA  
mA  
mW  
°C  
Ptot  
Tstg  
Tj  
Tamb 25 °C; note 1  
65  
+150  
150  
°C  
Tamb  
65  
+150  
°C  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
thermal resistance from junction to ambient note 1  
500  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2004 Jan 13  
3
 
 
NXP Semiconductors  
Product data sheet  
PNP Darlington transistors  
BCV26; BCV46  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
collector cut-off current  
BCV26  
IE = 0; VCB = 30 V  
100 nA  
100 nA  
100 nA  
BCV46  
IE = 0; VCB = 60 V  
IEBO  
hFE  
emitter cut-off current  
DC current gain  
BCV26  
IC = 0; VEB = 10 V  
IC = 1 mA; VCE = 5 V; (see Fig.2)  
4000  
2000  
BCV46  
DC current gain  
BCV26  
IC = 10 mA; VCE = 5 V; (see Fig.2)  
IC = 100 mA; VCE = 5 V; (see Fig.2)  
IC = 100 mA; IB = 0.1 mA  
10000  
4000  
BCV46  
DC current gain  
BCV26  
20000  
10000  
BCV46  
VCEsat  
collector-emitter saturation  
voltage  
1  
V
VBEsat  
VBEon  
fT  
base-emitter saturation voltage  
base-emitter on-state voltage  
transition frequency  
IC = 100 mA; IB = 0.1 mA  
IC = 10 mA; VCE = 5 V  
1.5  
1.4  
V
V
IC = 30 mA; VCE = 5 V; f = 100 MHz −  
220  
MHz  
MGD836  
100000  
h
FE  
80000  
60000  
40000  
20000  
0
1  
2
3
10  
10  
10  
I
(mA)  
C
VCE = 2 V.  
Fig.2 DC current gain; typical values.  
4
2004 Jan 13  
 
NXP Semiconductors  
Product data sheet  
PNP Darlington transistors  
BCV26; BCV46  
PACKAGE OUTLINE  
Plastic surface-mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M  
B
1
L
p
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
04-11-04  
06-03-16  
SOT23  
TO-236AB  
2004 Jan 13  
5
NXP Semiconductors  
Product data sheet  
PNP Darlington transistors  
BCV26; BCV46  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
2004 Jan 13  
6
 
 
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/05/pp7  
Date of release: 2004 Jan 13  
Document order number: 9397 750 12401  
配单直通车
BCV46T/R产品参数
型号:BCV46T/R
是否Rohs认证: 符合
生命周期:Transferred
零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.21.00.75
风险等级:5.14
最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:60 V
配置:DARLINGTON
最小直流电流增益 (hFE):10000
JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3
JESD-609代码:e3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:PNP
认证状态:Not Qualified
表面贴装:YES
端子面层:TIN
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER
晶体管元件材料:SILICON
标称过渡频率 (fT):220 MHz
VCEsat-Max:1 V
Base Number Matches:1
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