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    产品型号BCV61AT/R的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    M3D071  
    BCV61  
    NPN general purpose double  
    transistor  
    1999 Apr 08  
    Product specification  
    Supersedes data of 1997 Jun 16  
    Philips Semiconductors  
    Product specification  
    NPN general purpose double transistor  
    BCV61  
    FEATURES  
    PINNING  
    • Low current (max. 100 mA)  
    • Low voltage (max. 30 V)  
    • Matched pairs.  
    PIN  
    DESCRIPTION  
    1
    2
    3
    4
    collector TR2; base TR1 and TR2  
    collector TR1  
    emitter TR1  
    APPLICATIONS  
    emitter TR2  
    • For use in applications where the working point must be  
    independent of temperature  
    • Current mirrors.  
    handbook, hge  
    4
    3
    2
    1
    DESCRIPTION  
    NPN double transistor in a SOT143B plastic package.  
    PNP complement: BCV62.  
    TR2  
    4
    TR1  
    3
    1
    2
    MARKING  
    Top view  
    MAM293  
    TYPE  
    NUMBER  
    MARKING  
    CODE  
    TYPE  
    NUMBER  
    MARKING  
    CODE  
    BCV61  
    1Mp  
    1Jp  
    BCV61B  
    BCV61C  
    1Kp  
    1Lp  
    Fig.1 Simplified outline (SOT143B) and symbol.  
    BCV61A  
    LIMITING VALUES  
    In accordance with the Absolute Maximum Rating System (IEC 134).  
    SYMBOL  
    PARAMETER  
    collector-base voltage TR1  
    collector-emitter voltage TR1  
    emitter-base voltage  
    CONDITIONS  
    open emitter  
    MIN.  
    MAX.  
    30  
    UNIT  
    VCBO  
    VCEO  
    VEBS  
    IC  
    −
    −
    −
    −
    −
    −
    −
    V
    V
    V
    open base  
    VCE = 0  
    30  
    6
    collector current (DC)  
    100  
    200  
    200  
    250  
    +150  
    150  
    +150  
    mA  
    mA  
    mA  
    mW  
    °C  
    ICM  
    peak collector current  
    IBM  
    peak base current TR1  
    total power dissipation  
    storage temperature  
    Ptot  
    Tstg  
    Tj  
    Tamb ≤ 25 °C; note 1  
    −65  
    −
    junction temperature  
    °C  
    Tamb  
    operating ambient temperature  
    −65  
    °C  
    Note  
    1. Transistor mounted on an FR4 printed-circuit board.  
    1999 Apr 08  
    2
    Philips Semiconductors  
    Product specification  
    NPN general purpose double transistor  
    BCV61  
    THERMAL CHARACTERISTICS  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    note 1  
    VALUE  
    UNIT  
    Rth j-a  
    thermal resistance from junction to ambient  
    500  
    K/W  
    Note  
    1. Transistor mounted on an FR4 printed-circuit board.  
    CHARACTERISTICS  
    Tj = 25 °C unless otherwise specified.  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    MIN.  
    TYP. MAX. UNIT  
    Transistor TR1  
    ICBO  
    collector cut-off current  
    IE = 0; VCB = 30 V  
    −
    −
    15  
    5
    nA  
    µA  
    nA  
    IE = 0; VCB = 30 V; Tj = 150 °C  
    IC = 0; VEB = 5 V  
    −
    −
    IEBO  
    hFE  
    emitter cut-off current  
    DC current gain  
    −
    −
    100  
    −
    IC = 100 µA; VCE = 5 V  
    100  
    110  
    −
    −
    IC = 2 mA; VCE = 5 V  
    −
    800  
    250  
    600  
    −
    VCEsat  
    VBEsat  
    VBE  
    collector-emitter saturation  
    voltage  
    IC = 10 mA; IB = 0.5 mA  
    90  
    200  
    700  
    900  
    660  
    −
    mV  
    mV  
    mV  
    mV  
    mV  
    mV  
    pF  
    IC = 100 mA; IB = 5 mA  
    −
    base-emitter saturation  
    voltage  
    IC = 10 mA; IB = 0.5 mA; note 1  
    IC = 100 mA; IB = 5 mA; note 1  
    IC = 2 mA; VCE = 5 V; note 2  
    IC = 10 mA; VCE = 5 V; note 2  
    IE = ie = 0; VCB = 10 V; f = 1 MHz  
    IC = 10 mA; VCE = 5 V; f = 100 MHz  
    −
    −
    −
    base-emitter voltage  
    580  
    −
    700  
    770  
    −
    Cc  
    fT  
    collector capacitance  
    transition frequency  
    noise figure  
    −
    2.5  
    −
    100  
    −
    −
    MHz  
    dB  
    F
    IC = 200 µA; VCE = 5 V; RS = 2 kΩ;  
    −
    10  
    f = 1 kHz; B = 200 Hz  
    Transistor TR2  
    VEBS base-emitter forward voltage VCB = 0; IE = −250 mA  
    CB = 0; IE = −10 µA  
    IC = 2 mA; VCE = 5 V  
    −
    −
    −
    −1.8  
    V
    V
    −400  
    −
    mV  
    hFE  
    DC current gain  
    BCV61A  
    110  
    200  
    420  
    −
    −
    −
    220  
    450  
    800  
    BCV61B  
    BCV61C  
    1999 Apr 08  
    3
    Philips Semiconductors  
    Product specification  
    NPN general purpose double transistor  
    BCV61  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    MIN.  
    TYP. MAX. UNIT  
    Transistors TR1 and TR2  
    current matching of  
    transistors TR1 and TR2  
    IE2 = −0.5 mA; VCE1 = 5 V;  
    0.7  
    −
    1.3  
    1.3  
    −5  
    IC1  
    -------  
    IE2  
    T
    amb ≤ 25 °C  
    E2 = −0.5 mA; VCE1 = 5 V;  
    amb ≤ 150 °C  
    VCE1 = 5 V; note 3; (see Fig.2)  
    I
    T
    0.7  
    −
    −
    IE2  
    emitter current for thermal  
    stability of IC1  
    −
    mA  
    Notes  
    1. Decreasing 1.7 mV/°C with increasing temperature.  
    2. Decreasing 2 mV/°C with increasing temperature.  
    3. Device, without emitter resistors, mounted on an FR4 printed-circuit board.  
    handbook, halfpage  
    handbook, halfpage  
    A
    A
    I
    C1  
    I
    2
    3
    1
    4
    C1  
    2
    3
    1
    V
    I
    = constant  
    E2  
    TR1  
    TR2  
    CE1  
    V
    I
    = constant  
    E2  
    TR1  
    V
    TR2  
    CO  
    CE1  
    4
    R
    R
    E
    E
    V
    CO  
    MBK078  
    MBK079  
    VCE1 = 5 V; device, without emitter resistors, mounted on an  
    FR4 printed-circuit board.  
    2
    3
    Voltage drop at contacts: VCO < -- U T 16 mV  
    ^
    =
    Fig.2 Test circuit current matching.  
    Fig.3 BCV61 with emitter resistors.  
    1999 Apr 08  
    4
    Philips Semiconductors  
    Product specification  
    NPN general purpose double transistor  
    BCV61  
    MBK082  
    30  
    V
    I
    CE1max  
    (V)  
    E2 =  
    1 mA  
    20  
    5 mA  
    10 mA  
    10  
    50 mA  
    0
    10  
    −1  
    2
    1
    10  
    10  
    R
    (Ω)  
    E
    IC1  
    = 1.3 (see Fig.3).  
    -------  
    IE2  
    Fig.4 Maximum collector-emitter voltage as a function of emitter resistance.  
    1999 Apr 08  
    5
    Philips Semiconductors  
    Product specification  
    NPN general purpose double transistor  
    BCV61  
    PACKAGE OUTLINE  
    Plastic surface mounted package; 4 leads  
    SOT143B  
    D
    B
    E
    A
    X
    y
    H
    v
    M
    A
    E
    e
    b
    w
    M
    B
    p
    4
    3
    Q
    A
    A
    1
    c
    1
    2
    L
    p
    b
    1
    e
    1
    detail X  
    0
    1
    2 mm  
    scale  
    DIMENSIONS (mm are the original dimensions)  
    A
    1
    max  
    UNIT  
    A
    b
    b
    c
    D
    E
    e
    e
    H
    L
    p
    Q
    v
    w
    y
    p
    1
    1
    E
    1.1  
    0.9  
    0.48  
    0.38  
    0.88  
    0.78  
    0.15  
    0.09  
    3.0  
    2.8  
    1.4  
    1.2  
    2.5  
    2.1  
    0.45  
    0.15  
    0.55  
    0.45  
    0.1  
    mm  
    1.9  
    1.7  
    0.2  
    0.1  
    0.1  
    REFERENCES  
    JEDEC  
    EUROPEAN  
    PROJECTION  
    OUTLINE  
    VERSION  
    ISSUE DATE  
    IEC  
    EIAJ  
    97-02-28  
    SOT143B  
    1999 Apr 08  
    6
    Philips Semiconductors  
    Product specification  
    NPN general purpose double transistor  
    BCV61  
    DEFINITIONS  
    Data Sheet Status  
    Objective specification  
    Preliminary specification  
    Product specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    1999 Apr 08  
    7
    Philips Semiconductors – a worldwide company  
    Argentina: see South America  
    Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
    Tel. +31 40 27 82785, Fax. +31 40 27 88399  
    Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,  
    Tel. +61 2 9805 4455, Fax. +61 2 9805 4466  
    New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
    Tel. +64 9 849 4160, Fax. +64 9 849 7811  
    Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
    Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210  
    Norway: Box 1, Manglerud 0612, OSLO,  
    Tel. +47 22 74 8000, Fax. +47 22 74 8341  
    Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
    220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
    Pakistan: see Singapore  
    Belgium: see The Netherlands  
    Brazil: see South America  
    Philippines: Philips Semiconductors Philippines Inc.,  
    106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
    Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
    Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
    51 James Bourchier Blvd., 1407 SOFIA,  
    Tel. +359 2 68 9211, Fax. +359 2 68 9102  
    Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
    Tel. +48 22 612 2831, Fax. +48 22 612 2327  
    Portugal: see Spain  
    Romania: see Italy  
    Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
    Tel. +1 800 234 7381, Fax. +1 800 943 0087  
    China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
    72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
    Tel. +852 2319 7888, Fax. +852 2319 7700  
    Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
    Tel. +7 095 755 6918, Fax. +7 095 755 6919  
    Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,  
    Colombia: see South America  
    Czech Republic: see Austria  
    Tel. +65 350 2538, Fax. +65 251 6500  
    Slovakia: see Austria  
    Slovenia: see Italy  
    Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,  
    Tel. +45 33 29 3333, Fax. +45 33 29 3905  
    South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
    2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,  
    Tel. +27 11 470 5911, Fax. +27 11 470 5494  
    Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
    Tel. +358 9 615 800, Fax. +358 9 6158 0920  
    France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
    Tel. +33 1 4099 6161, Fax. +33 1 4099 6427  
    South America: Al. Vicente Pinzon, 173, 6th floor,  
    04547-130 SÃO PAULO, SP, Brazil,  
    Tel. +55 11 821 2333, Fax. +55 11 821 2382  
    Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
    Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
    Spain: Balmes 22, 08007 BARCELONA,  
    Tel. +34 93 301 6312, Fax. +34 93 301 4107  
    Hungary: see Austria  
    Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
    Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
    India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
    254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
    Tel. +91 22 493 8541, Fax. +91 22 493 0966  
    Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
    Tel. +41 1 488 2741 Fax. +41 1 488 3263  
    Indonesia: PT Philips Development Corporation, Semiconductors Division,  
    Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
    Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
    Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
    TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874  
    Ireland: Newstead, Clonskeagh, DUBLIN 14,  
    Tel. +353 1 7640 000, Fax. +353 1 7640 200  
    Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
    209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
    Tel. +66 2 745 4090, Fax. +66 2 398 0793  
    Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
    TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
    Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
    Tel. +90 212 279 2770, Fax. +90 212 282 6707  
    Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
    20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
    Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
    252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
    Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
    TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
    United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
    MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
    Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
    Tel. +82 2 709 1412, Fax. +82 2 709 1415  
    United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
    Tel. +1 800 234 7381, Fax. +1 800 943 0087  
    Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
    Tel. +60 3 750 5214, Fax. +60 3 757 4880  
    Uruguay: see South America  
    Vietnam: see Singapore  
    Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
    Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
    Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
    Middle East: see Italy  
    Tel. +381 11 62 5344, Fax.+381 11 63 5777  
    For all other countries apply to: Philips Semiconductors,  
    Internet: http://www.semiconductors.philips.com  
    International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
    5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
    © Philips Electronics N.V. 1999  
    SCA63  
    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
    The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
    without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
    under patent- or other industrial or intellectual property rights.  
    Printed in The Netherlands  
    115002/00/03/pp8  
    Date of release: 1999 Apr 08  
    Document order number: 9397 750 05554  
    配单直通车
    BCV61AT/R产品参数
    型号:BCV61AT/R
    是否Rohs认证： 符合
    生命周期：Transferred
    包装说明：SMALL OUTLINE, R-PDSO-G4
    针数：4
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    HTS代码：8541.21.00.95
    风险等级：5.07
    其他特性：FOR TRANSISTOR2 HFE IS 110
    外壳连接：COLLECTOR
    最大集电极电流 (IC)：0.1 A
    集电极-发射极最大电压：30 V
    配置：COMMON BASE, 2 ELEMENTS
    最小直流电流增益 (hFE)：110
    JESD-30 代码：R-PDSO-G4
    JESD-609代码：e3
    元件数量：2
    端子数量：4
    最高工作温度：150 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：SMALL OUTLINE
    峰值回流温度（摄氏度）：260
    极性/信道类型：NPN
    认证状态：Not Qualified
    表面贴装：YES
    端子面层：TIN
    端子形式：GULL WING
    端子位置：DUAL
    处于峰值回流温度下的最长时间：40
    晶体管元件材料：SILICON
    标称过渡频率 (fT)：100 MHz
    VCEsat-Max：0.6 V
    Base Number Matches：1
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