BCV61C,215原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

BCV61

NPN general-purpose double transistors

Rev. 04 — 18 December 2009

Product data sheet

1. Product profile

1.1 General description

NPN general-purpose double transistors in a small SOT143B Surface-Mounted

Device (SMD) plastic package.

Table 1.

Product overview

Type number

Package

NXP

PNP complement

JEITA

BCV61

SOT143B

-

BCV62

BCV61A

BCV61B

BCV61C

BCV62A

BCV62B

BCV62C

1.2 Features

Low current (max. 100 mA)

Low voltage (max. 30 V)

Matched pairs

1.3 Applications

Applications with working point independent of temperature

Current mirrors

2. Pinning information

Table 2.

Pinning

Description

Simplified outline

Graphic symbol

1

collector TR2;

base TR1 and TR2

4

3

4

3

2

3

4

collector TR1

emitter TR1

emitter TR2

TR2

TR1

1

2

1

2

006aaa842

BCV61

NXP Semiconductors

NPN general-purpose double transistors

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

-

Description

Version

BCV61

plastic surface-mounted package; 4 leads

SOT143B

BCV61A

BCV61B

BCV61C

4. Marking

Table 4.

Marking codes

Type number

BCV61

Marking code^[1]

1M*

1J*

1K*

1L*

BCV61A

BCV61B

BCV61C

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Per transistor

Conditions

Min

Max

Unit

V_CBO

V_CEO

V_EBS

I_C

collector-base voltage

open emitter

open base

V_CE= 0 V

-

30

V

collector-emitter voltage

emitter-base voltage

collector current

30

V

6

V

100

200

mA

I_CM

peak collector current

peak base current

I_BM

Per device

P_tot

[1]

total power dissipation

junction temperature

ambient temperature

storage temperature

T_amb≤ 25 °C

-

250

mW

°C

T_j

-

150

T_amb

T_stg

−65

+150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

2 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

500 K/W

[1]

R_th(j-a)

thermal resistance from junction in free air

to ambient

-

[1] Device mounted on an FR4 PCB.

7. Characteristics

Table 7.

Characteristics

T_j= 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Transistor TR1

I_CBO

collector-base cut-off current

V_CB= 30 V;

I_E= 0 A

-

15

5

nA

V_CB= 30 V;

I_E= 0 A;

μA

T_j= 150 °C

I_EBO

h_FE

emitter-base cut-off current

DC current gain

V_EB= 5 V;

I_C= 0 A

-

100

-

nA

V_CE= 5 V;

100

-

I_C= 100 μA

V

_CE= 5 V;

110

-

800

250

600

-

I_C= 2 mA

V_CEsat

V_BEsat

V_BE

collector-emitter saturation

voltage

I_C= 10 mA;

I_B= 0.5 mA

-

90

200

700

900

660

-

mV

MHz

I_C= 100 mA;

I_B= 5 mA

-

[1]

[2]

base-emitter saturation voltage

base-emitter voltage

I_C= 10 mA;

I_B= 0.5 mA

-

I_C= 100 mA;

I_B= 5 mA

-

I_C= 2 mA;

V_CE= 5 V

580

-

700

770

-

I_C= 10 mA;

V_CE= 5 V

f_T

transition frequency

collector capacitance

noise figure

V_CE= 5 V;

I_C= 10 mA;

f = 100 MHz

100

-

C_c

NF

V_CB= 10 V;

I_E= i_e= 0 A;

f = 1 MHz

-

2.5

-

pF

dB

V_CE= 5 V;

I_C= 200 μA;

R_S= 2 kΩ;

f = 1 kHz;

10

B = 200 Hz

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

3 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

Table 7.

Characteristics …continued

T_j= 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Transistor TR2

V_EBS

emitter-base voltage

V_CB= 0 V;

I_E= −250 mA

-

−1.8

V

V_CB= 0 V;

−400

-

mV

I_E= −10 μA

h_FE

DC current gain

V_CE= 5 V;

I_C= 2 mA

BCV61

110

200

420

-

800

220

450

800

BCV61A

BCV61B

BCV61C

Transistors TR1 and TR2

I_C1/I_E2

current matching

I_E2= −0.5 mA;

V_CE1= 5 V

T_amb≤ 25 °C

T_amb≤ 150 °C

V_CE1= 5 V

0.7

-

1.3

−5

[3]

I_E2

emitter current 2

mA

[1] V_BEsatdecreases by about 1.7 mV/K with increasing temperature.

[2] V_BEdecreases by about 2 mV/K with increasing temperature.

[3] Device, without emitter resistors, mounted on an FR4 PCB.

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

4 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

mgt723

mgt724

400

1200

BE

V

(mV)

h

FE

1000

(1)

300

(1)

(2)

800

600

400

200

0

(2)

(3)

200

100

0

(3)

−1

2

3

−1

2

3

10

1

10

1

10

I

(mA)

I (mA)

C

V_CE= 5 V

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig 1. BCV61A: DC current gain as a function of

collector current; typical values

Fig 2. BCV61A: Base-emitter voltage as a function of

collector current; typical values

mgt725

mgt726

3

10

1200

BEsat

V

(mV)

1000

V

(mV)

CEsat

(1)

(2)

800

600

400

200

0

2

10

(1)

(2)

(3)

10

−1

2

3

−1

2

3

1

10

1

10

I

(mA)

I (mA)

C

I_C/I_B= 20

I_C/I_B= 10

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig 3. BCV61A: Collector-emitter saturation voltage

as a function of collector current; typical

values

Fig 4. BCV61A: Base-emitter saturation voltage as a

function of collector current; typical values

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

5 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

mgt727

mgt728

600

1200

V

BE

h

FE

(mV)

1000

(1)

(2)

500

(1)

(2)

400

300

200

100

0

800

600

400

200

0

(3)

−2

−1

2

3

−1

2

3

10

1

10

1

10

I

(mA)

I

(mA)

C

V_CE= 5 V

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig 5. BCV61B: DC current gain as a function of

collector current; typical values

Fig 6. BCV61B: Base-emitter voltage as a function of

collector current; typical values

mgt729

mgt730

4

10

1200

BEsat

V

(mV)

1000

V

CEsat

(mV)

(1)

(2)

3

10

800

600

400

200

0

(3)

2

10

(1)

(3) (2)

10

−1

2

3

−1

2

3

1

10

1

10

I

(mA)

I (mA)

C

I_C/I_B= 20

I_C/I_B= 10

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig 7. BCV61B: Collector-emitter saturation voltage

as a function of collector current; typical

values

Fig 8. BCV61B: Base-emitter saturation voltage as a

function of collector current; typical values

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

6 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

mgt731

mgt732

1200

V

BE

h

FE

(mV)

1000

800

600

400

200

0

(1)

(2)

800

600

400

200

0

(2)

(3)

−2

−1

2

3

−1

2

3

10

1

10

1

10

I

(mA)

I

(mA)

C

V_CE= 5 V

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig 9. BCV61C: DC current gain as a function of

collector current; typical values

Fig 10. BCV61C: Base-emitter voltage as a function of

collector current; typical values

mgt733

mgt734

4

10

1200

BEsat

V

(mV)

V

CEsat

1000

(mV)

(1)

(2)

3

10

800

600

400

200

0

(3)

2

10

(1)

(3) (2)

10

−1

2

3

−1

2

3

1

10

1

10

I

(mA)

I (mA)

C

I_C/I_B= 20

I_C/I_B= 10

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig 11. BCV61C: Collector-emitter saturation voltage

as a function of collector current; typical

values

Fig 12. BCV61C: Base-emitter saturation voltage as a

function of collector current; typical values

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

7 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

mbk082

30

I

=

V

E2

CE1max

(V)

1 mA

20

10

0

5 mA

10 mA

50 mA

−1

2

10

1

10

R

E

(Ω)

I_C1/I_E2= 1.3

Fig 13. Maximum collector-emitter voltage as a function of emitter resistance

8. Test information

A

I

C1

2

3

1

I

=

E2

V

TR1

TR2

CE1

constant

4

006aaa831

Fig 14. Test circuit current matching

A

I

C1

2

1

I

=

E2

V

TR1

TR2

CE1

constant

3

4

R

E

006aab977

Fig 15. BCV61 with emitter resistors

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

8 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

9. Package outline

3.0

2.8

1.1

0.9

1.9

4

3

0.45

0.15

2.5 1.4

2.1 1.2

1

2

0.88

0.78

0.48

0.38

0.15

0.09

1.7

Dimensions in mm

04-11-16

Fig 16. Package outline SOT143B

10. Packing information

Table 8.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number Package Description

Packing quantity

3000

-215

10000

BCV61

SOT143B 4 mm pitch, 8 mm tape and reel

-235

BCV61A

BCV61B

BCV61C

[1] For further information and the availability of packing methods, see Section 14.

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

9 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

11. Soldering

3.25

1.9

0.6

(3×)

0.5

(3×)

solder lands

solder resist

0.7 0.6

(3×) (3×)

2

solder paste

3

occupied area

0.7 0.6

Dimensions in mm

0.75

0.95

0.9

1

sot143b_fr

Fig 17. Reflow soldering footprint SOT143B

4.45

2.2

1.2

(3×)

1.425

(3×)

solder lands

solder resist

occupied area

2.575

4.6

Dimensions in mm

1.425

preferred transport direction during soldering

1

1.2

sot143b_fw

Fig 18. Wave soldering footprint SOT143B

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

10 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

12. Revision history

Table 9.

Revision history

Document ID

BCV61_4

Release date

Data sheet status

Change notice

Supersedes

20091218

Product data sheet

-

BCV61_3

Modifications:

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Section 3 “Ordering information”: added

• Section 4 “Marking”: updated

• Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added

• Section 8 “Test information”: added

• Figure 16: superseded by minimized package outline drawing

• Section 10 “Packing information”: added

• Section 11 “Soldering”: added

• Section 13 “Legal information”: updated

BCV61_3

19990408

Product specification

-

BCV61_CNV_2

-

BCV61_CNV_2

19970616

Product specification

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

11 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

13. Legal information

13.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Definitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between information in this document and such

terms and conditions, the latter will prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

BCV61_4

Product data sheet

Rev. 04 — 18 December 2009

12 of 13

BCV61

NXP Semiconductors

NPN general-purpose double transistors

15. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

General description . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

Packing information . . . . . . . . . . . . . . . . . . . . . 9

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

3

4

5

6

7

8

9

10

11

12

13

Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.1

13.2

13.3

13.4

14

15

Contact information. . . . . . . . . . . . . . . . . . . . . 12

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 18 December 2009

Document identifier: BCV61_4

型号:	BCV61C,215
Brand Name：	NXP Semiconductor
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	NXP SEMICONDUCTORS
零件包装代码：	SOT-143
包装说明：	PLASTIC, SMD, 4 PIN
针数：	4
制造商包装代码：	SOT143B
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.21.00.95
风险等级：	7.4
其他特性：	FOR TRANSISTOR2 HFE IS 420
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	30 V
配置：	CURRENT MIRROR
最小直流电流增益 (hFE)：	110
JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	4
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.25 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	100 MHz
VCEsat-Max：	0.6 V
Base Number Matches：	1

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