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    产品型号BCV62AE6327HTSA1的Datasheet PDF文件预览

    BCV62  
    PNP Silicon Double Transistor  
    • To be used as a current mirror  
    3
    • Good thermal coupling and V matching  
    BE  
    2
    4
    • High current gain  
    1
    • Low collector-emitter saturation voltage  
    • Pb-free (RoHS compliant) package  
    • Qualified according AEC Q101  
    C1 (2)  
    Tr.1  
    C2 (1)  
    Tr.2  
    E1 (3)  
    E2 (4)  
    EHA00013  
    Type  
    Marking  
    3Js  
    3Ks  
    Pin Configuration  
    Package  
    BCV62A  
    BCV62B  
    BCV62C  
    1 = C2 2 = C1 3 = E1 4 = E2 SOT143  
    1 = C2 2 = C1 3 = E1 4 = E2 SOT143  
    1 = C2 2 = C1 3 = E1 4 = E2 SOT143  
    3Ls  
    Maximum Ratings  
    Parameter  
    Symbol  
    Value  
    Unit  
    30  
    V
    Collector-emitter voltage  
    (transistor T1)  
    V
    V
    V
    CEO  
    CBO  
    EBS  
    30  
    Collector-base voltage (open emitter)  
    (transistor T1)  
    6
    Emitter-base voltage  
    100  
    200  
    200  
    300  
    150  
    mA  
    DC collector current  
    Peak collector current  
    Base peak current (transistor T1)  
    Total power dissipation, T = 99 °C  
    Junction temperature  
    Storage temperature  
    I
    C
    I
    CM  
    I
    BM  
    mW  
    °C  
    P
    T
    j
    T
    S
    tot  
    -65 ... 150  
    stg  
    Thermal Resistance  
    Junction - soldering point  
    1)  
    R
    ≤170  
    K/W  
    thJS  
    1
    For calculation of R  
    please refer to Application Note AN077 (Thermal Resistance Calculation)  
    thJA  
    2011-07-25  
    1
    BCV62  
    Electrical Characteristics at T = 25°C, unless otherwise specified  
    A
    Parameter  
    Symbol  
    Values  
    typ. max.  
    Unit  
    min.  
    30  
    30  
    6
    DC Characteristics of T1  
    Collector-emitter breakdown voltage  
    -
    -
    -
    -
    -
    -
    -
    -
    V
    V
    V
    V
    (BR)CEO  
    I = 10 mA, I = 0  
    C
    B
    Collector-base breakdown voltage  
    I = 10 µA, I = 0  
    (BR)CBO  
    (BR)EBO  
    C
    E
    Emitter-base breakdown voltage  
    I = 10 µA, I = 0  
    -
    E
    C
    -
    15  
    5
    -
    nA  
    µA  
    -
    Collector cutoff current  
    = 30 V, I = 0  
    I
    CBO  
    V
    CB  
    E
    -
    Collector cutoff current  
    = 30 V, I = 0 , T = 150 °C  
    I
    CBO  
    V
    CB  
    E
    A
    100  
    DC current gain 1)  
    I = 0.1 mA, V = 5 V  
    h
    FE  
    FE  
    C
    CE  
    DC current gain 1)  
    h
    I = 2 mA, V = 5 V  
    125  
    220  
    420  
    180  
    290  
    520  
    220  
    475  
    800  
    BCV62A  
    BCV62B  
    BCV62C  
    C
    CE  
    mV  
    Collector-emitter saturation voltage1)  
    I = 10 mA, I = 0.5 mA  
    V
    V
    V
    CEsat  
    -
    -
    75  
    250  
    300  
    650  
    C
    B
    I = 100 mA, I = 5 mA  
    C
    B
    Base-emitter saturation voltage 1)  
    I = 10 mA, I = 0.5 mA  
    BEsat  
    -
    -
    700  
    850  
    -
    -
    C
    B
    I = 100 mA, I = 5 mA  
    C
    B
    Base-emitter voltage 1)  
    I = 2 mA, V = 5 V  
    BE(ON)  
    600  
    -
    650  
    -
    750  
    820  
    C
    CE  
    I = 10 mA, V = 5 V  
    C
    CE  
    1) Pulse test: t ≤ 300µs, D = 2%  
    2011-07-25  
    2
    BCV62  
    Electrical Characteristics at T = 25°C, unless otherwise specified.  
    A
    Parameter  
    Symbol  
    Values  
    Unit  
    min.  
    typ. max.  
    DC Characteristics  
    V
    -
    Base-emitter forward voltage  
    V
    BES  
    I = 10 µA  
    0.4  
    -
    -
    -
    -
    E
    I = 250 mA  
    1.8  
    E
    Matching of transistor T1 and transistor T2  
    I
    / I  
    C1 C2  
    at I = 0.5mA and V  
    = 5V  
    CE1  
    -
    -
    -
    -
    -
    E2  
    T = 25 °C  
    0.7  
    0.7  
    1.3  
    1.3  
    A
    T = 150 °C  
    A
    -
    5
    -
    mA  
    Thermal coupling of transistor T1 and  
    I
    E2  
    1)  
    transistor T2  
    T1: V = 5V  
    CE  
    Maximum current of thermal stability of I  
    C1  
    AC characteristics of transistor T1  
    Transition frequency  
    -
    -
    -
    -
    250  
    1.5  
    8
    -
    -
    -
    -
    MHz  
    pF  
    f
    T
    I = 10 mA, V = 5 V, f = 100 MHz  
    C
    CE  
    Collector-base capacitance  
    = 10 V, f = 1 MHz  
    C
    cb  
    eb  
    V
    CB  
    Emitter-base capacitance  
    = 0.5 V, f = 1 MHz  
    C
    F
    V
    EB  
    2
    dB  
    Noise figure  
    I = 200 µA, V = 5 V, R = 2 kΩ,  
    C
    CE  
    S
    f = 1 kHz, ∆ f = 200 Hz  
    Short-circuit input impedance  
    I = 1 mA, V = 10 V, f = 1 kHz  
    -
    4.5  
    2
    -
    h
    h
    h
    h
    kΩ  
    11e  
    12e  
    21e  
    22e  
    C
    CE  
    -4  
    -
    100  
    -
    -
    900  
    -
    Open-circuit reverse voltage transf.ratio  
    I = 1 mA, V = 10 V, f = 1 kHz  
    10  
    C
    CE  
    -
    Short-circuit forward current transf.ratio  
    I = 1 mA, V = 10 V, f = 1 kHz  
    -
    C
    CE  
    30  
    Open-circuit output admittance  
    I = 1 mA, V = 10 V, f = 1 kHz  
    µS  
    C
    CE  
    1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm  
    2011-07-25  
    3
    BCV62  
    Test circuit for current matching  
    A
    Ι C1  
    2
    1
    VCE1  
    T1  
    T2  
    Ι
    E2 = constant  
    ...  
    3
    4
    VCO  
    VCO  
    EHN00003  
    Note: Voltage drop at contacts: V  
    < 2/3 V = 16mV  
    T
    CO  
    Characteristic for determination of V  
    at specified R range with  
    E
    CE1  
    I
    as parameter under condition of I /I = 1.3  
    E2  
    C1 E2  
    A
    Ι C1  
    2
    1
    T2  
    4
    VCE1  
    Ι
    E2 = constant  
    T1  
    ...  
    3
    RE  
    RE  
    EHN00004  
    Note: BCV62 with emitter resistors  
    2011-07-25  
    4
    BCV62  
    Collector-base capacitance C = ƒ(V  
    )
    Total power dissipation P = f(T )  
    cb  
    CB  
    tot  
    S
    Emitter-base capacitance C = ƒ(V )  
    eb  
    EB  
    350  
    12  
    pF  
    mW  
    10  
    9
    8
    7
    6
    5
    4
    3
    2
    1
    0
    250  
    200  
    150  
    100  
    50  
    CEB  
    CCB  
    0
    V
    0
    4
    8
    12  
    16  
    22  
    (V  
    0
    15 30 45 60 75 90 105 120  
    150  
    °C  
    T
    S
    V
    )
    CB EB  
    Permissible pulse load  
    P
    / P  
    = f (t )  
    totmax  
    totDC  
    p
    BCV 62  
    EHP00941  
    103  
    5
    Ptotmax  
    PtotDC  
    t p  
    t p  
    T
    D
    =
    T
    102  
    5
    D
    0
    =
    0.005  
    0.01  
    0.02  
    0.05  
    0.1  
    0.2  
    0.5  
    101  
    5
    100  
    10-6 10-5 10-4 10-3 10-2  
    s
    100  
    t p  
    2011-07-25  
    5
    Package SOT143  
    BCV62  
    Package Outline  
    0.1  
    1
    0.1  
    2.9  
    B
    1.9  
    0.1 MAX.  
    4
    3
    1
    2
    A
    0.2  
    0.08...0.1  
    5
    +0.1  
    0.8  
    -0.05  
    0...8˚  
    +0.1  
    0.4  
    -0.05  
    M
    M
    0.2  
    0.25  
    B
    A
    1.7  
    Foot Print  
    0.8 1.2 0.8  
    1.2  
    0.8  
    0.8  
    Marking Layout (Example)  
    Manufacturer  
    2005, June  
    RF s  
    Date code (YM)  
    Pin 1  
    BFP181  
    Type code  
    Standard Packing  
    Reel ø180 mm = 3.000 Pieces/Reel  
    Reel ø330 mm = 10.000 Pieces/Reel  
    0.2  
    4
    3.15  
    1.15  
    Pin 1  
    2011-07-25  
    6
    BCV62  
    Edition 2009-11-16  
    Published by  
    Infineon Technologies AG  
    81726 Munich, Germany  
    2009 Infineon Technologies AG  
    All Rights Reserved.  
    Legal Disclaimer  
    The information given in this document shall in no event be regarded as a guarantee  
    of conditions or characteristics. With respect to any examples or hints given herein,  
    any typical values stated herein and/or any information regarding the application of  
    the device, Infineon Technologies hereby disclaims any and all warranties and  
    liabilities of any kind, including without limitation, warranties of non-infringement of  
    intellectual property rights of any third party.  
    Information  
    For further information on technology, delivery terms and conditions and prices,  
    please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
    Warnings  
    Due to technical requirements, components may contain dangerous substances.  
    For information on the types in question, please contact the nearest Infineon  
    Technologies Office.  
    Infineon Technologies components may be used in life-support devices or systems  
    only with the express written approval of Infineon Technologies, if a failure of such  
    components can reasonably be expected to cause the failure of that life-support  
    device or system or to affect the safety or effectiveness of that device or system.  
    Life support devices or systems are intended to be implanted in the human body or  
    to support and/or maintain and sustain and/or protect human life. If they fail, it is  
    reasonable to assume that the health of the user or other persons may be  
    endangered.  
    2011-07-25  
    7
    配单直通车
    BCV62AE6327HTSA1产品参数
    型号:BCV62AE6327HTSA1
    是否Rohs认证： 符合
    生命周期：End Of Life
    IHS 制造商：INFINEON TECHNOLOGIES AG
    包装说明：SMALL OUTLINE, R-PDSO-G4
    Reach Compliance Code：compliant
    ECCN代码：EAR99
    Factory Lead Time：6 weeks
    风险等级：6.23
    最大集电极电流 (IC)：0.1 A
    集电极-发射极最大电压：30 V
    配置：CURRENT MIRROR
    最小直流电流增益 (hFE)：125
    JESD-30 代码：R-PDSO-G4
    JESD-609代码：e3
    湿度敏感等级：1
    元件数量：2
    端子数量：4
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：SMALL OUTLINE
    峰值回流温度（摄氏度）：NOT SPECIFIED
    极性/信道类型：PNP
    参考标准：AEC-Q101
    表面贴装：YES
    端子面层：Tin (Sn)
    端子形式：GULL WING
    端子位置：DUAL
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    晶体管元件材料：SILICON
    标称过渡频率 (fT)：250 MHz
    Base Number Matches：1
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