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产品型号BCW33LT3G的Datasheet PDF文件预览

BCW33LT1G  
General Purpose Transistor  
NPN Silicon  
Features  
http://onsemi.com  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
COLLECTOR  
3
MAXIMUM RATINGS  
1
BASE  
Rating  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Symbol  
Value  
32  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
2
32  
Vdc  
EMITTER  
5.0  
Vdc  
3
Collector Current Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
100  
mAdc  
C
1
Symbol  
Max  
Unit  
2
Total Device Dissipation FR5 Board  
(Note 1)  
P
D
SOT23  
(TO236AB)  
CASE 318  
STYLE 6  
T
A
= 25°C  
225  
1.8  
mW  
mW/°C  
Derate above 25°C  
Thermal Resistance,  
R
556  
°C/W  
q
JA  
JunctiontoAmbient  
MARKING DIAGRAM  
Total Device Dissipation  
P
D
Alumina Substrate (Note 2),  
T
= 25°C  
300  
2.4  
mW  
mW/°C  
D3 M G  
A
Derate above 25°C  
G
Thermal Resistance,  
R
417  
°C/W  
q
JA  
JunctiontoAmbient  
D3  
M
G
= Specific Device Code  
= Date Code*  
= PbFree Package  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BCW33LT1G  
SOT23  
3000/Tape & Reel  
(PbFree)  
BCW33LT3G  
SOT23  
10,000/Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 4  
BCW33LT1/D  
 
BCW33LT1G  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
32  
32  
Vdc  
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 2.0 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
V
C
B
EmitterBase Breakdown Voltage  
(I = 10 mAdc, I = 0)  
5.0  
E
C
Collector Cutoff Current  
(V = 32 Vdc, I = 0)  
I
CBO  
100  
10  
nAdc  
mAdc  
CB  
E
(V = 32 Vdc, I = 0, T = 100°C)  
CB  
E
A
ON CHARACTERISTICS  
DC Current Gain  
hFE  
(I = 2.0 mAdc, V = 5.0 Vdc)  
420  
800  
0.25  
0.70  
C
CE  
CollectorEmitter Saturation Voltage  
(I = 10 mAdc, I = 0.5 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
C
B
BaseEmitter On Voltage  
(I = 2.0 mAdc, V = 5.0 Vdc)  
V
BE(on)  
0.55  
C
CE  
SMALLSIGNAL CHARACTERISTICS  
Output Capacitance  
C
4.0  
10  
pF  
dB  
obo  
(V = 10 Vdc, I = 0, f = 1.0 MHz)  
CB  
E
Noise Figure  
NF  
(V = 5.0 Vdc, I = 0.2 mAdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)  
CE  
C
S
EQUIVALENT SWITCHING TIME TEST CIRCUITS  
+ꢀ3.0 V  
+ꢀ3.0 V  
t
1
10 < t < 500 ms  
1
DUTY CYCLE = 2%  
300 ns  
+10.9 V  
<1.0 ns  
275  
275  
+10.9 V  
DUTY CYCLE = 2%  
10 k  
10 k  
0
-ꢀ0.5 V  
<1.0 ns  
C
< 4.0 pF*  
C < 4.0 pF*  
S
S
-ꢀ9.1 V  
1N916  
*Total shunt capacitance of test jig and connectors  
Figure 1. TurnOn Time  
Figure 2. TurnOff Time  
http://onsemi.com  
2
BCW33LT1G  
TYPICAL NOISE CHARACTERISTICS  
(VCE = 5.0 Vdc, TA = 25°C)  
20  
10  
100  
I
C
= 1.0 mA  
BANDWIDTH = 1.0 Hz  
BANDWIDTH = 1.0 Hz  
50  
I
C
= 1.0 mA  
R ≈ ∞  
S
R
= 0  
S
20  
300 mA  
300 mA  
100 mA  
10  
5.0  
7.0  
5.0  
100 mA  
2.0  
1.0  
10 mA  
0.5  
0.2  
0.1  
30 mA  
30 mA  
3.0  
2.0  
10 mA  
10 20  
50 100 200  
500 1ꢁk  
2ꢁk  
5ꢁk 10ꢁk  
10  
20  
50 100 200  
500 1ꢁk  
2ꢁk  
5ꢁk 10ꢁk  
f, FREQUENCY (Hz)  
f, FREQUENCY (Hz)  
Figure 3. Noise Voltage  
Figure 4. Noise Current  
NOISE FIGURE CONTOURS  
(VCE = 5.0 Vdc, TA = 25°C)  
500ꢁk  
1ꢁM  
500ꢁk  
BANDWIDTH = 1.0 Hz  
BANDWIDTH = 1.0 Hz  
200ꢁk  
100ꢁk  
50ꢁk  
200ꢁk  
100ꢁk  
50ꢁk  
20ꢁk  
20ꢁk  
10ꢁk  
10ꢁk  
5ꢁk  
2.0 dB  
1.0 dB  
5ꢁk  
2ꢁk  
1ꢁk  
3.0 dB  
4.0 dB  
2.0 dB  
2ꢁk  
1ꢁk  
3.0 dB  
5.0 dB  
8.0 dB  
6.0 dB  
10 dB  
500  
500  
200  
100  
50  
200  
100  
10  
20 30  
50 70 100  
200 300  
500 700 1ꢁk  
10  
20 30  
50 70 100  
200 300  
500 700 1ꢁk  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 5. Narrow Band, 100 Hz  
Figure 6. Narrow Band, 1.0 kHz  
500ꢁk  
10 Hz to 15.7 kHz  
200ꢁk  
100ꢁk  
50ꢁk  
Noise Figure is defined as:  
2
20ꢁk  
2
R
n S  
2
1ń2  
e
n
) 4KTR ) I  
S
10 ǒ  
Ǔ
NF + 20 log  
10ꢁk  
5ꢁk  
4KTR  
S
1.0 dB  
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)  
2ꢁk  
1ꢁk  
2.0 dB  
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)  
23  
3.0 dB  
K
T
R
= Boltzman’s Constant (1.38 x 10  
= Temperature of the Source Resistance (°K)  
= Source Resistance (Ohms)  
j/°K)  
500  
5.0 dB  
8.0 dB  
S
200  
100  
50  
20 30  
50 70 100  
200 300  
500 700 1ꢁk  
10  
I , COLLECTOR CURRENT (mA)  
C
Figure 7. Wideband  
http://onsemi.com  
3
BCW33LT1G  
TYPICAL STATIC CHARACTERISTICS  
1.0  
0.8  
0.6  
0.4  
0.2  
0
100  
T = 25°C  
PULSE WIDTH = 300 ms  
DUTY CYCLE 2.0%  
A
BCW33LT1  
I
B
= 500 mA  
400 mA  
T = 25°C  
J
80  
60  
300 mA  
200 mA  
I
C
= 1.0 mA  
10 mA  
50 mA  
100 mA  
40  
20  
0
100 mA  
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0  
5.0 10 20  
0
5.0  
10  
15  
20  
25  
30  
35  
40  
I , BASE CURRENT (mA)  
B
V
CE  
, COLLECTOR-EMITTER VOLTAGE (VOLTS)  
Figure 8. Collector Saturation Region  
Figure 9. Collector Characteristics  
1.4  
1.2  
1.6  
0.8  
0
*APPLIES for I /I h /2  
C
B
FE  
T = 25°C  
J
25°C to 125°C  
-55°C to 25°C  
1.0  
0.8  
0.6  
0.4  
*q for V  
VC  
CE(sat)  
V
@ I /I = 10  
C B  
BE(sat)  
-ꢀ0.8  
-ꢀ1.6  
-ꢀ2.4  
V
BE(on)  
@ V = 1.0 V  
CE  
25°C to 125°C  
-55°C to 25°C  
0.2  
0
q
for V  
BE  
VB  
V
@ I /I = 10  
C B  
CE(sat)  
0.1 0.2  
0.5 1.0  
2.0  
5.0  
10  
20  
50 100  
0.1  
0.2  
0.5  
1.0 2.0  
5.0 10 20  
50 100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 10. “On” Voltages  
Figure 11. Temperature Coefficients  
300  
200  
1000  
V
= 3.0 V  
CC  
I /I = 10  
700  
500  
C
B
t
s
T = 25°C  
J
100  
70  
300  
200  
50  
t
r
100  
70  
30  
20  
t
f
50  
t @ V  
d
= 0.5 Vdc  
BE(off)  
V
= 3.0 V  
10  
CC  
I /I = 10  
30  
20  
C
B
= I  
7.0  
5.0  
I
B1 B2  
T = 25°C  
J
3.0  
10  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 12. TurnOn Time  
Figure 13. TurnOff Time  
http://onsemi.com  
4
BCW33LT1G  
TYPICAL DYNAMIC CHARACTERISTICS  
500  
10  
7.0  
5.0  
T = 25°C  
J
f = 1.0 MHz  
T = 25°C  
J
f = 100 MHz  
300  
200  
C
ib  
V
CE  
= 20 V  
5.0 V  
C
ob  
3.0  
2.0  
100  
70  
50  
1.0  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50  
0.05 0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
I , COLLECTOR CURRENT (mA)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 14. CurrentGain — Bandwidth Product  
Figure 15. Capacitance  
1.0  
0.7  
0.5  
D = 0.5  
0.2  
0.3  
0.2  
0.1  
0.05  
0.02  
0.1  
0.07  
0.05  
FIGURE 19A  
DUTY CYCLE, D = t /t  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
1
2
P
(pk)  
0.03  
0.02  
t
1
READ TIME AT t (SEE AN569)  
1
0.01  
Z
T
= r(t) R  
T = P  
q
q
JA(t)  
J(pk)  
JA  
Z
SINGLE PULSE  
t
2
q
A
(pk)  
JA(t)  
0.01  
0.01 0.02  
0.05 0.1 0.2  
0.5 1.0 2.0  
5.0  
10 20  
50 100 200  
500 1.0ꢁk 2.0ꢁk 5.0ꢁk 10ꢁk 20ꢁk  
100ꢁk  
50ꢁk  
t, TIME (ms)  
Figure 16. Thermal Response  
4
3
10  
DESIGN NOTE: USE OF THERMAL RESPONSE DATA  
V
CC  
= 30 Vdc  
A train of periodical power pulses can be represented by the model  
as shown in Figure 16A. Using the model and the device thermal  
response the normalized effective transient thermal resistance of  
Figure 16 was calculated for various duty cycles.  
10  
10  
2
I
CEO  
To find Z  
, multiply the value obtained from Figure 16 by the  
JA(t)  
q
steady state value R  
.
1
0
q
JA  
10  
Example:  
I
The MPS3904 is dissipating 2.0 watts peak under the following  
conditions:  
CBO  
AND  
10  
I
@ V  
= 3.0 Vdc  
t = 1.0 ms, t = 5.0 ms. (D = 0.2)  
1 2  
CEX  
BE(off)  
-1  
10  
10  
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of  
r(t) is 0.22.  
-2  
The peak rise in junction temperature is therefore  
-4 -2  
0
+20 +40 +60 +80 +100 +120 +140 +160  
DT = r(t) x P  
x R  
= 0.22 x 2.0 x 200 = 88°C.  
q
(pk)  
JA  
0
0
T , JUNCTION TEMPERATURE (°C)  
J
For more information, see AN569.  
Figure 16A.  
http://onsemi.com  
5
BCW33LT1G  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 31808  
ISSUE AN  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
SEE VIEW C  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS OF  
BASE MATERIAL.  
4. 31801 THRU 07 AND 09 OBSOLETE, NEW  
STANDARD 31808.  
3
H
E
E
c
1
2
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
MAX  
MIN  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
b
0.25  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
e
q
A
L
L1  
A1  
L1  
VIEW C  
H
E
STYLE 6:  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
BCW33LT1/D  
配单直通车
BCW33LT3G产品参数
型号:BCW33LT3G
Brand Name:ON Semiconductor
是否无铅: 不含铅
生命周期:Active
IHS 制造商:ON SEMICONDUCTOR
零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3
制造商包装代码:318-08
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.21.00.95
Factory Lead Time:2 weeks
风险等级:5.12
最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:32 V
配置:SINGLE
最小直流电流增益 (hFE):420
JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:YES
端子面层:Tin (Sn)
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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