BCW60FF现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

NPN Silicon AF Transistors

BCW 60

BCX 70

● For AF input stages and driver applications

● High current gain

● Low collector-emitter saturation voltage

● Low noise between 30 Hz and 15 kHz

● Complementary types: BCW 61, BCX 71 (PNP)

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

1

2

3

BCW 60 A

BCW 60 B

BCW 60 C

BCW 60 D

BCW 60 FF

BCW 60 FN

BCX 70 G

BCX 70 H

BCX 70 J

AAs

ABs

ACs

ADs

AFs

ANs

AGs

AHs

AJs

Q62702-C1517

Q62702-C1497

Q62702-C1476

Q62702-C1477

Q62702-C1529

Q62702-C1567

Q62702-C1539

Q62702-C1481

Q62702-C1552

Q62702-C1571

B

E

C

SOT-23

BCX 70 K

AKs

1)

For detailed information see chapter Package Outlines.

5.91

Semiconductor Group

1

BCW 60

BCX 70

Maximum Ratings

Parameter

Symbol

Values

Unit

BCW 60 BCW 60 FF BCX 70

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

V

CE0

CB0

EB0

32

45

V

5

I

C

100

200

330

150

mA

Peak collector current

Peak base current

CM

BM

Total power dissipation, T

S

= 71 ˚C Ptot

mW

˚C

Junction temperature

T

j

Storage temperature range

stg

– 65 … + 150

Thermal Resistance

Junction - ambient¹⁾

R

th JA

th JS

≤ 310

≤ 240

K/W

Junction - soldering point

R

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

1)

Semiconductor Group

2

BCW 60

BCX 70

Electrical Characteristics

at T = 25 ˚C, unless otherwise specified.

A

Parameter

Symbol

Values

typ.

Unit

min.

max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CE0

V(BR)CB0

V(BR)EB0

V

IC

= 10 mA

BCW 60, BCW 60 FF

BCX 70

32

45

–

Collector-base breakdown voltage

IC

= 10 µA

BCW 60, BCW 60 FF

BCX 70

32

45

–

Emitter-base breakdown voltage

= 1 µA

5

–

IE

Collector cutoff current

ICB0

V

CB = 32 V

CB = 45 V

CB = 32 V, T

CB = 45 V, T

BCW 60, BCW 60 FF

BCX 70

= 150 ˚C BCW 60, BCW 60 FF

= 150 ˚C BCX 70

–

20

nA

µA

A

Emitter cutoff current

IEB0

–

20

nA

VEB = 4 V

DC current gain ¹⁾

h

FE

–

IC

= 10 µA, VCE = 5 V

20

40

100

140

200

300

460

–

BCW 60 A, BCX 70 G

BCW 60 B, BCX 70 H

BCW 60 FF, BCW 60 C, BCX 70 J

BCW 60 FN, BCW 60 D, BCX 70 K

= 2 mA, VCE = 5 V

120

180

250

380

170

250

350

500

220

310

460

630

BCW 60 A, BCX 70 G

BCW 60 B, BCX 70 H

BCW 60 FF, BCW 60 C, BCX 70 J

BCW 60 FN, BCW 60 D, BCX 70 K

= 50 mA, VCE = 1 V

50

70

90

100

–

BCW 60 A, BCX 70 G

BCW 60 B, BCX 70 H

BCW 60 FF, BCW 60 C, BCX 70 J

BCW 60 FN, BCW 60 D, BCX 70 K

1)

Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

3

BCW 60

BCX 70

Electrical Characteristics

at T = 25 ˚C, unless otherwise specified.

A

Parameter

Symbol

Values

typ.

Unit

min.

max.

DC characteristics

Collector-emitter saturation voltage¹⁾

VCEsat

VBEsat

VBE (on)

V

–

0.12

0.20

0.25

0.55

I

C

= 10 mA, I

B

= 0.25 mA

= 1.25 mA

IC

= 50 mA, I

B

Base-emitter saturation voltage¹⁾

–

0.70

0.83

0.85

1.05

I

C

= 10 mA, I

B

= 0.25 mA

= 1.25 mA

IC

= 50 mA, I

B

Base-emitter voltage

IC

= 10 µA, VCE = 5 V

= 2 mA, VCE = 5 V

= 50 mA, VCE = 1 V ¹⁾

–

0.55

–

0.52

0.65

0.78

–

0.75

–

AC characteristics

Transition frequency

f

T

–

250

3

–

MHz

pF

I

C

= 20 mA, VCE = 5 V, f = 100 MHz

Output capacitance

CB = 10 V, f = 1 MHz

Input capacitance

EB = 0.5 V, f = 1 MHz

Short-circuit input impedance

C

obo

ibo

V

C

8

V

h

11e

kΩ

IC

= 2 mA, VCE = 5 V, f = 1 kHz

BCW 60 A, BCX 70 G

BCW 60 B, BCX 70 H

–

2.7

3.6

4.5

7.5

–

BCW 60 FF, BCW 60 C, BCX 70 J

BCW 60 FN, BCW 60 D, BCX 70 K

10^{– 4}

Open-circuit reverse voltage transfer ratio

12e

IC

= 2 mA, VCE = 5 V, f = 1 kHz

BCW 60 A, BCX 70 G

BCW 60 B, BCX 70 H

–

1.5

2.0

3.0

–

BCW 60 FF, BCW 60 C, BCX 70 J

BCW 60 FN, BCW 60 D, BCX 70 K

1)

Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

4

BCW 60

BCX 70

Electrical Characteristics

at T = 25 ˚C, unless otherwise specified.

A

Parameter

Symbol

Values

typ.

Unit

min.

max.

AC characteristics

Short-circuit forward current transfer ratio

h

21e

–

IC

= 2 mA, VCE = 5 V, f = 1 kHz

BCW 60 A, BCX 70 G

BCW 60 B, BCX 70 H

–

200

260

330

520

–

BCW 60 FF, BCW 60 C, BCX 70 J

BCW 60 FN, BCW 60 D, BCX 70 K

Open-circuit output admittance

22e

µs

IC

= 2 mA, VCE = 5 V, f = 1 kHz

BCW 60 A, BCX 70 G

BCW 60 B, BCX 70 H

–

18

24

30

50

–

BCW 60 FF, BCW 60 C, BCX 70 J

BCW 60 FN, BCW 60 D, BCX 70 K

Noise figure

= 0.2 mA, VCE = 5 V, R

f= 1 kHz, ∆f = 200 Hz

F

V

dB

IC

S

= 2 kΩ

BCW 60 A to BCX 70 K

BCW 60 FF, BCW 60 FN

–

2

1

–

2

Equivalent noise voltage

= 0.2 mA, VCE = 5 V, R

f= 10 Hz … 50 Hz

BCW 60 FF, BCW 60 FN

n

–

0.135 µV

IC

S

= 2 kΩ

Semiconductor Group

5

BCW 60

BCX 70

Total power dissipation Ptot = f (T

* Package mounted on epoxy

A

*; TS

)

Collector-base capacitance CCB0 = f (VCB0

Emitter-base capacitance C^EB0= f (VEB0

)

Permissible pulse load P^{tot max}/Ptot DC = f (t

p

)

Transition frequency f

T

= f (I )

C

V

CE = 5 V

Semiconductor Group

6

BCW 60

BCX 70

Base-emitter saturation voltage

Collector-emitter saturation voltage

IC

= f (VBEsat

)

IC

= f (VCEsat)

hFE = 40

Collector current I

C

= f (VBE

)

DC current gain h^FE= f (I )

C

V

CE = 5 V

VCE = 5 V

Semiconductor Group

7

BCW 60

BCX 70

Collector cutoff current ICB0 = f (T

A

)

h parameter h

e

= f (I )

C

VCE = 5 V

h parameter h

= 2 mA

e

= f (VCE

)

Noise figure F = f (V^CE

)

I

C

IC

= 0.2 mA, R = 2 kΩ, f = 1 kHz

S

Semiconductor Group

8

BCW 60

BCX 70

Noise figure F = f (f)

= 0.2 mA, R = 2 kΩ,VCE = 5 V

Noise figure F = f (I )

C

IC

S

V

CE = 5 V, f = 120 Hz

Noise figure F = f (I

C)

Noise figure F = f (I )

C

V

CE = 5 V, f = 1 kHz

VCE = 5 V, f = 10 kHz

Semiconductor Group

9

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