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    • BCX51E-6327
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    产品型号BCX51E6327的Datasheet PDF文件预览

    BCX51...-BCX53...  
    PNP Silicon AF Transistors  
    1
    • For AF driver and output stages  
    • High collector current  
    2
    3
    2
    • Low collector-emitter saturation voltage  
    • Complementary types: BCX54...BCX56 (NPN)  
    • Pb-free (RoHS compliant) package  
    • Qualified according AEC Q101  
    Type  
    BCX51  
    BCX51-16  
    BCX52  
    BCX52-16  
    BCX53  
    Marking  
    AA  
    AD  
    AE  
    AM  
    AH  
    AK  
    AL  
    Pin Configuration  
    Package  
    SOT89  
    SOT89  
    SOT89  
    SOT89  
    SOT89  
    SOT89  
    SOT89  
    1=B  
    1=B  
    1=B  
    1=B  
    1=B  
    1=B  
    1=B  
    2=C  
    2=C  
    2=C  
    2=C  
    2=C  
    2=C  
    2=C  
    3=E  
    3=E  
    3=E  
    3=E  
    3=E  
    3=E  
    3=E  
    BCX53-10  
    BCX53-16  
    2011-07-29  
    1
    BCX51...-BCX53...  
    Maximum Ratings  
    Parameter  
    Symbol  
    Value  
    Unit  
    V
    Collector-emitter voltage  
    BCX51  
    BCX52  
    V
    V
    V
    CEO  
    CBO  
    EBO  
    45  
    60  
    80  
    BCX53  
    Collector-base voltage  
    BCX51  
    BCX52  
    45  
    60  
    100  
    BCX53  
    5
    1
    Emitter-base voltage  
    Collector current  
    A
    I
    C
    1.5  
    100  
    200  
    2
    Peak collector current, t ≤ 10 ms  
    Base current  
    Peak base current  
    Total power dissipation  
    I
    I
    B
    I
    BM  
    P
    p
    CM  
    mA  
    W
    tot  
    T ≤ 120 °C  
    S
    150  
    °C  
    Junction temperature  
    Storage temperature  
    T
    j
    T
    -65 ... 150  
    stg  
    Thermal Resistance  
    Parameter  
    Junction - soldering point  
    Symbol  
    Value  
    ≤ 15  
    Unit  
    K/W  
    1)  
    R
    thJS  
    1
    For calculation of R  
    please refer to Application Note AN077 (Thermal Resistance Calculation)  
    thJA  
    2011-07-29  
    2
    BCX51...-BCX53...  
    Electrical Characteristics at T = 25°C, unless otherwise specified  
    A
    Parameter  
    Symbol  
    Values  
    typ. max.  
    Unit  
    min.  
    DC Characteristics  
    Collector-emitter breakdown voltage  
    V
    V
    V
    V
    (BR)CEO  
    (BR)CBO  
    (BR)EBO  
    I = 10 mA, I = 0 , BCX51  
    45  
    60  
    80  
    -
    -
    -
    -
    -
    -
    C
    B
    I = 10 mA, I = 0 , BCX52  
    C
    B
    I = 10 mA, I = 0 , BCX53  
    C
    B
    Collector-base breakdown voltage  
    I = 100 µA, I = 0 , BCX51  
    45  
    60  
    100  
    -
    -
    -
    -
    -
    -
    C
    E
    I = 100 µA, I = 0 , BCX52  
    C
    E
    I = 100 µA, I = 0 , BCX53  
    C
    E
    Emitter-base breakdown voltage  
    I = 10 µA, I = 0  
    5
    -
    -
    E
    C
    Collector-base cutoff current  
    I
    µA  
    -
    CBO  
    V
    V
    = 30 V, I = 0  
    -
    -
    -
    -
    0.1  
    20  
    CB  
    CB  
    E
    = 30 V, I = 0 , T = 150 °C  
    E
    A
    1)  
    DC current gain  
    I = 5 mA, V = 2 V  
    h
    FE  
    25  
    40  
    63  
    100  
    25  
    -
    -
    -
    C
    CE  
    I = 150 mA, V = 2 V, BCX51...BCX53  
    250  
    160  
    250  
    -
    C
    CE  
    I = 150 mA, V = 2 V, BCX53-10  
    100  
    160  
    -
    C
    CE  
    I = 150 mA, V = 2 V, BCX51-16...BCX53-16  
    C
    CE  
    I = 500 mA, V = 2 V  
    C
    CE  
    1)  
    Collector-emitter saturation voltage  
    I = 500 mA, I = 50 mA  
    V
    -
    -
    0.5  
    V
    CEsat  
    C
    B
    1)  
    Base-emitter voltage  
    I = 500 mA, V = 2 V  
    V
    BE(ON)  
    -
    -
    1
    C
    CE  
    AC Characteristics  
    Transition frequency  
    -
    125  
    -
    MHz  
    f
    T
    I = 50 mA, V = 10 V, f = 20 MHz  
    C
    CE  
    1
    Pulse test: t < 300µs; D < 2%  
    2011-07-29  
    3
    BCX51...-BCX53...  
    DC current gain h = ƒ(I )  
    Collector-emitter saturation voltage  
    FE  
    C
    V
    = 2 V  
    I = ƒ(V  
    ), h = 10  
    CE  
    C
    CEsat FE  
    BCX 51...53  
    EHP00440  
    BCX 51...53  
    EHP00441  
    104  
    mA  
    103  
    5
    hFE  
    ΙC  
    103  
    5
    100 ˚C  
    25 ˚C  
    102  
    5
    -50 ˚C  
    ˚C  
    ˚C  
    ˚C  
    100  
    25  
    -50  
    102  
    5
    101  
    5
    101  
    5
    100  
    100  
    100  
    5 101  
    5 10 2  
    5 103  
    Ι C  
    104  
    mA  
    0
    0.2  
    0.4  
    0.6  
    VCE sat  
    V
    0.8  
    Base-emitter saturation voltage  
    I = ƒ(V ), h = 10  
    Collector current I = ƒ(V )  
    C BE  
    V = 2V  
    C
    BEsat  
    FE  
    CE  
    BCX 51...53  
    EHP00443  
    BCX 51...53  
    EHP00437  
    10 4  
    mA  
    104  
    mA  
    Ι C  
    Ι C  
    10 3  
    5
    103  
    5
    ˚C  
    ˚C  
    -50˚C  
    100  
    25  
    ˚C  
    ˚C  
    -50 ˚C  
    100  
    25  
    10 2  
    5
    102  
    5
    101  
    5
    101  
    5
    10 0  
    100  
    0
    0.2  
    0.4  
    0.6  
    0.8  
    1.0  
    1.2  
    V
    0
    0.2  
    0.4  
    0.6  
    0.8  
    1.0  
    1.2  
    V
    VBE sat  
    VBE  
    2011-07-29  
    4
    BCX51...-BCX53...  
    Collector cutoff current I  
    = ƒ(T )  
    Transition frequency f = ƒ(I )  
    CBO  
    A
    T
    C
    V
    = 30 V  
    V
    = 10 V  
    CBO  
    CE  
    BCX 51...53  
    EHP00439  
    BCX 51...53  
    EHP00442  
    10 4  
    nA  
    103  
    MHz  
    5
    max  
    f T  
    Ι CB0  
    10 3  
    5
    10 2  
    5
    102  
    5
    typ  
    10 1  
    5
    100  
    5
    101  
    10 -1  
    100  
    5
    101  
    5
    102  
    103  
    0
    50  
    100  
    150  
    ˚C  
    TA  
    mA  
    Ι C  
    Total power dissipation P = ƒ(T )  
    Permissible Pulse Load R  
    = ƒ(t )  
    thJS p  
    tot  
    S
    10 2  
    2.4  
    W
    10 1  
    10 0  
    10 -1  
    1.6  
    1.2  
    0.8  
    0.4  
    0
    D = 0,5  
    0,2  
    0,1  
    0,05  
    0,02  
    0,01  
    0,005  
    0
    10 -6  
    10 -5  
    10 -4  
    10 -3  
    10 -2  
    10 0  
    °C  
    s
    0
    15 30 45 60 75 90 105 120  
    150  
    T
    t
    p
    S
    2011-07-29  
    5
    BCX51...-BCX53...  
    Permissible Pulse Load  
    P
    /P  
    = ƒ(t )  
    totmax totDC  
    p
    10 3  
    -
    D = 0  
    0.005  
    0.01  
    0.02  
    0.05  
    0.1  
    10 2  
    10 1  
    10 0  
    0.2  
    0.5  
    10 -6  
    10 -5  
    10 -4  
    10 -3  
    10 -2  
    10 0  
    s
    t
    p
    2011-07-29  
    6
    Package SOT89  
    BCX51...-BCX53...  
    Package Outline  
    0.1  
    4.5  
    B
    0.1  
    1.5  
    45˚  
    0.25  
    0.2 MAX.1)  
    0.05  
    0.2  
    1.6  
    0.15  
    1
    2
    3
    1.5  
    0.1  
    0.35  
    +0.2  
    -0.1  
    0.45  
    M
    0.15  
    B
    x3  
    3
    0.2  
    B
    1) Ejector pin markings possible  
    Foot Print  
    2.0  
    0.8  
    0.8  
    0.7  
    Marking Layout (Example)  
    BAW78D  
    Type code  
    Pin 1  
    2005, June  
    Date code (YM)  
    Manufacturer  
    Standard Packing  
    Reel ø180 mm = 1.000 Pieces/Reel  
    Reel ø330 mm = 4.000 Pieces/Reel  
    0.2  
    8
    Pin 1  
    1.6  
    4.3  
    2011-07-29  
    7
    BCX51...-BCX53...  
    Edition 2009-11-16  
    Published by  
    Infineon Technologies AG  
    81726 Munich, Germany  
    2009 Infineon Technologies AG  
    All Rights Reserved.  
    Legal Disclaimer  
    The information given in this document shall in no event be regarded as a guarantee  
    of conditions or characteristics. With respect to any examples or hints given herein,  
    any typical values stated herein and/or any information regarding the application of  
    the device, Infineon Technologies hereby disclaims any and all warranties and  
    liabilities of any kind, including without limitation, warranties of non-infringement of  
    intellectual property rights of any third party.  
    Information  
    For further information on technology, delivery terms and conditions and prices,  
    please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
    Warnings  
    Due to technical requirements, components may contain dangerous substances.  
    For information on the types in question, please contact the nearest Infineon  
    Technologies Office.  
    Infineon Technologies components may be used in life-support devices or systems  
    only with the express written approval of Infineon Technologies, if a failure of such  
    components can reasonably be expected to cause the failure of that life-support  
    device or system or to affect the safety or effectiveness of that device or system.  
    Life support devices or systems are intended to be implanted in the human body or  
    to support and/or maintain and sustain and/or protect human life. If they fail, it is  
    reasonable to assume that the health of the user or other persons may be  
    endangered.  
    2011-07-29  
    8
    配单直通车
    BCX51E6327产品参数
    型号:BCX51E6327
    生命周期：Transferred
    包装说明：SMALL OUTLINE, R-PSSO-F3
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    风险等级：5.36
    外壳连接：COLLECTOR
    最大集电极电流 (IC)：1 A
    集电极-发射极最大电压：45 V
    配置：SINGLE
    最小直流电流增益 (hFE)：40
    JESD-30 代码：R-PSSO-F3
    元件数量：1
    端子数量：3
    最高工作温度：150 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：SMALL OUTLINE
    极性/信道类型：PNP
    功耗环境最大值：1 W
    认证状态：Not Qualified
    表面贴装：YES
    端子形式：FLAT
    端子位置：SINGLE
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    标称过渡频率 (fT)：125 MHz
    VCEsat-Max：0.5 V
    Base Number Matches：1
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