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  • 北京元坤伟业科技有限公司

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  • BCX5616T100
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产品型号BCX5616TA的Datasheet PDF文件预览

BCX 54 / 55 / 56  
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89  
Features  
Mechanical Data  
Case: SOT89  
Case Material: Molded Plastic, “Green” Molding  
Compound (Note 2)  
UL Flammability Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish  
Ic = 1A Continuous Collector Current  
Low Saturation Voltage VCE(sat) < 500mV @ 0.5A  
Gain groups 10 and 16  
Epitaxial Planar Die Construction  
Complementary PNP types: BCX51, 52 and 53  
Lead-Free, RoHS Compliant (Note 1)  
Halogen and Antimony Free. “Green” Devices (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
Weight: 0.072 grams (Approximate)  
Applications  
Medium Power Switching or Amplification Applications  
AF driver and output stages  
SOT89  
C
E
E
C
B
B
C
Top View  
Pin-Out  
Top View  
Device Symbol  
Ordering Information (Note 3)  
Product  
BCX54TA  
BCX5410TA  
BCX5416TA  
BCX55TA  
BCX5510TA  
BCX5516TA  
BCX56TA  
BCX5610TA  
BCX5616TA  
BCX5316TC  
Marking  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
1,000  
BA  
BC  
BD  
BE  
BG  
BM  
BH  
BK  
BL  
7
7
7
7
7
7
7
7
7
12  
12  
12  
12  
12  
12  
12  
12  
12  
12  
1,000  
1,000  
1,000  
1,000  
1,000  
1,000  
1,000  
1,000  
BL  
13  
4,000  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com  
3. For packaging details, go to our website http://www.diodes.com  
Marking Information  
xx = Product Type Marking Code, as follows:  
BCX54 = BA  
BCX5410 = BC  
BCX5416 = BD  
BCX55 = BE  
BCX5510 = BG  
BCX5516 = BM  
BCX56 = BH  
BCX5610 = BK  
BCX5616 = BL  
xx  
1 of 7  
www.diodes.com  
June 2011  
© Diodes Incorporated  
BCX 54 / 55 / 56  
Datasheet Number: DS35369 Rev. 2 – 2  
BCX 54 / 55 / 56  
Maximum Ratings @ TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
BCX54  
45  
BCX55  
60  
BCX56  
100  
80  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
45  
60  
V
5
V
Continuous Collector Current  
Peak Pulse Collector Current  
Continuous Base Current  
Peak Pulse Base Current  
1
A
1.5  
100  
200  
ICM  
IB  
mA  
IBM  
Thermal Characteristics @ TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
1
Unit  
W
Power Dissipation (Note 4)  
PD  
Thermal Resistance, Junction to Ambient (Note 4)  
Thermal Resistance, Junction to Leads (Note 5)  
Operating and Storage Temperature Range  
124  
RθJA  
RθJL  
°C/W  
°C/W  
°C  
10.0  
-65 to +150  
T
J, TSTG  
Notes:  
4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured  
when operating in a steady-state condition.  
5. Thermal resistance from junction to solder-point (on the exposed collector pad).  
2 of 7  
www.diodes.com  
June 2011  
© Diodes Incorporated  
BCX 54 / 55 / 56  
Datasheet Number: DS35369 Rev. 2 – 2  
BCX 54 / 55 / 56  
Thermal Characteristics  
120  
25mm x 25mm 1oz Cu  
25mm x 25mm 1oz Cu  
T
= 25°C  
T
= 25°C  
amb  
amb  
D=0.5  
D=0.2  
100  
10  
1
100  
80  
60  
40  
20  
0
Single pulse  
Single Pulse  
D=0.05  
D=0.1  
100µ 1m 10m 100m  
1
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Power Dissipation  
1.0  
25mm x 25mm 1oz Cu  
0.8  
0.6  
0.4  
0.2  
0.0  
0
20 40 60 80 100 120 140 160  
Temperature (°C)  
Derating Curve  
3 of 7  
www.diodes.com  
June 2011  
© Diodes Incorporated  
BCX 54 / 55 / 56  
Datasheet Number: DS35369 Rev. 2 – 2  
BCX 54 / 55 / 56  
Electrical Characteristics @ TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Min  
45  
60  
100  
45  
60  
80  
5
Typ  
Max  
Unit  
Test Condition  
BCX54  
BCX55  
BCX56  
BCX54  
BCX55  
BCX56  
Collector-Base  
-
-
V
BVCBO  
IC = 100µA  
Breakdown Voltage  
Collector-Emitter  
-
-
-
V
BVCEO  
IC = 10mA  
IE = 10µA  
Breakdown Voltage (Note 6)  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
-
-
-
V
BVEBO  
ICBO  
V
V
CB = 30V  
CB = 30V, TA = 150°C  
0.1  
20  
-
µA  
nA  
-
20  
IEBO  
VEB = 4V  
IC = 5mA, VCE = 2V  
IC = 150mA, VCE = 2V  
25  
40  
25  
-
250  
-
-
-
-
All versions  
Static Forward Current Transfer  
Ratio (Note 6)  
IC = 500mA, VCE = 2V  
IC = 150mA, VCE = 2V  
IC = 150mA, VCE = 2V  
hFE  
10 gain grp  
16 gain grp  
63  
100  
-
-
-
-
160  
250  
0.5  
Collector-Emitter Saturation Voltage (Note 6)  
V
V
VCE(sat)  
VBE(on)  
IC = 500mA, IB = 50mA  
Base-Emitter Turn-On Voltage (Note 6)  
-
-
1.0  
IC = 500mA, VCE = 2V  
IC = 50mA, VCE = 10V  
f = 100MHz  
Transition Frequency  
Output Capacitance  
fT  
150  
-
-
-
-
MHz  
pF  
Cobo  
25  
V
CB = 10V, f = 1MHz  
Notes:  
6. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.  
0.8  
250  
200  
150  
100  
0.6  
0.4  
0.2  
0
50  
0
0
1
2
3
4
5
0.001  
0.01  
IC, COLLECTOR CURRENT (A)  
Fig. 2 Typical DC Current Gain vs. Collector Current  
0.1  
1
10  
VCE, COLLECTOR-EMITTER VOLTAGE (V)  
Fig. 1 Typical Collector Current  
vs. Collector-Emitter Voltage  
4 of 7  
www.diodes.com  
June 2011  
© Diodes Incorporated  
BCX 54 / 55 / 56  
Datasheet Number: DS35369 Rev. 2 – 2  
BCX 54 / 55 / 56  
1.2  
1.0  
0.4  
0.3  
0.8  
0.6  
0.4  
0.2  
0.1  
0.2  
0
0
0.0001 0.001  
0.01  
0.1  
1
10  
0.0001 0.001  
0.01  
0.1  
1
10  
IC, COLLECTOR CURRENT (A)  
IC, COLLECTOR CURRENT (A)  
Fig. 3 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
Fig. 4 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
1.2  
1.0  
140  
120  
100  
80  
0.8  
0.6  
0.4  
0.2  
0
60  
40  
20  
0
0.0001 0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
IC, COLLECTOR CURRENT (A)  
Fig. 5 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
VR, REVERSE VOLTAGE (V)  
Fig. 6 Typical Capacitance Characteristics  
300  
250  
200  
150  
100  
V
= 5V  
CE  
50  
0
f = 100MHz  
0
20  
40  
60  
80  
100  
IC, COLLECTOR CURRENT (mA)  
Fig. 7 Typical Gain-Bandwidth Product  
vs. Collector Current  
5 of 7  
www.diodes.com  
June 2011  
© Diodes Incorporated  
BCX 54 / 55 / 56  
Datasheet Number: DS35369 Rev. 2 – 2  
BCX 54 / 55 / 56  
Package Outline Dimensions  
D1  
C
SOT89  
Min  
Dim  
A
B
B1  
C
D
Max  
1.40  
0.44  
0.35  
0.35  
4.40  
1.52  
2.29  
1.60  
0.62  
0.54  
0.43  
4.60  
1.83  
2.60  
E
H
L
B
D1  
E
e
B1  
e1  
E
e1  
H
1.50 Typ  
3.00 Typ  
3.94  
0.89  
4.25  
1.20  
A
L
All Dimensions in mm  
D
Suggested Pad Layout  
X1  
Dimensions Value (in mm)  
X
0.900  
1.733  
0.416  
1.300  
4.600  
1.475  
0.950  
1.125  
1.500  
X1  
X2  
Y
Y1  
Y2  
Y3  
Y4  
C
X2 (2x)  
Y1  
Y3  
Y4  
Y2  
C
Y
X (3x)  
6 of 7  
www.diodes.com  
June 2011  
© Diodes Incorporated  
BCX 54 / 55 / 56  
Datasheet Number: DS35369 Rev. 2 – 2  
BCX 54 / 55 / 56  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2011, Diodes Incorporated  
www.diodes.com  
7 of 7  
www.diodes.com  
June 2011  
© Diodes Incorporated  
BCX 54 / 55 / 56  
Datasheet Number: DS35369 Rev. 2 – 2  
配单直通车
BCX5616TA产品参数
型号:BCX5616TA
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
IHS 制造商:DIODES INC
包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3
Reach Compliance Code:compliant
ECCN代码:EAR99
Factory Lead Time:15 weeks
风险等级:1.56
Samacsys Confidence:4
Samacsys Status:Released
Samacsys PartID:385200
Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPN
Samacsys Package Category:Other
Samacsys Footprint Name:Diodes SOT-89
Samacsys Released Date:2019-01-10 15:33:15
Is Samacsys:N
其他特性:HIGH RELIABILITY
外壳连接:COLLECTOR
最大集电极电流 (IC):1 A
基于收集器的最大容量:25 pF
集电极-发射极最大电压:80 V
配置:SINGLE
最小直流电流增益 (hFE):25
JESD-30 代码:R-PSSO-F3
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:3
最高工作温度:150 °C
最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性/信道类型:NPN
功耗环境最大值:1 W
最大功率耗散 (Abs):1 W
认证状态:Not Qualified
参考标准:AEC-Q101
表面贴装:YES
端子面层:Matte Tin (Sn)
端子形式:FLAT
端子位置:SINGLE
晶体管应用:SWITCHING
晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHz
VCEsat-Max:0.5 V
Base Number Matches:1
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