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    • 北京元坤伟业科技有限公司

           该会员已使用本站17年以上

    • BCX69-25E-6327
    • 数量-
    • 厂家-
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    • -
    • QQ:857273081QQ：857273081 复制
      QQ:1594462451QQ：1594462451 复制
    • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
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    • BCX69-25E-6327图

    • 深圳市一线半导体有限公司

       该会员已使用本站15年以上
    • BCX69-25E-6327
    • 数量15000 
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    • QQ:2881493920QQ：2881493920 复制
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    产品型号BCX69-25E6327的Datasheet PDF文件预览

    BCX69...  
    PNP Silicon AF Transistors  
    1
    • For general AF applications  
    • High collector current  
    2
    3
    2
    • High current gain  
    • Low collector-emitter saturation voltage  
    • Complementary type: BCX68 (NPN)  
    • Pb-free (RoHS compliant) package  
    • Qualified according AEC Q101  
    Type  
    Marking  
    CF  
    CG  
    Pin Configuration  
    Package  
    BCX69-10  
    BCX69-16  
    BCX69-25  
    1=B  
    1=B  
    1=B  
    2=C  
    2=C  
    2=C  
    3=E  
    3=E  
    3=E  
    SOT89  
    SOT89  
    SOT89  
    CH  
    Maximum Ratings  
    Parameter  
    Symbol  
    Value  
    Unit  
    20  
    25  
    5
    V
    Collector-emitter voltage  
    Collector-base voltage  
    Emitter-base voltage  
    Collector current  
    V
    V
    V
    CEO  
    CBO  
    EBO  
    1
    A
    I
    C
    2
    Peak collector current, t ≤ 10 ms  
    I
    p
    CM  
    100  
    200  
    3
    mA  
    W
    Base current  
    Peak base current  
    Total power dissipation-  
    I
    B
    I
    BM  
    P
    tot  
    T = 114 °C  
    S
    150  
    °C  
    Junction temperature  
    Storage temperature  
    T
    j
    T
    -65 ... 150  
    stg  
    Thermal Resistance  
    Parameter  
    Junction - soldering point  
    Symbol  
    Value  
    ≤ 12  
    Unit  
    K/W  
    1)  
    R
    thJS  
    1
    For calculation of R  
    please refer to Application Note AN077 (Thermal Resistance Calculation)  
    thJA  
    2011-10-05  
    1
    BCX69...  
    Electrical Characteristics at T = 25°C, unless otherwise specified  
    A
    Parameter  
    Symbol  
    Values  
    typ. max.  
    Unit  
    min.  
    DC Characteristics  
    Collector-emitter breakdown voltage  
    20  
    -
    -
    -
    -
    -
    -
    V
    V
    V
    V
    (BR)CEO  
    (BR)CBO  
    (BR)EBO  
    I = 30 mA, I = 0  
    C
    B
    Collector-base breakdown voltage  
    I = 10 µA, I = 0  
    25  
    5
    C
    E
    Emitter-base breakdown voltage  
    I = 1 µA, I = 0  
    E
    C
    Collector-base cutoff current  
    I
    µA  
    -
    CBO  
    V
    V
    = 25 V, I = 0  
    -
    -
    -
    -
    0.1  
    100  
    CB  
    CB  
    E
    = 25 V, I = 0 , T = 150  
    E
    A
    1)  
    DC current gain  
    I = 5 mA, V = 10 V  
    h
    FE  
    50  
    85  
    100  
    160  
    60  
    -
    -
    C
    CE  
    I = 500 mA, V = 1 V, BCX69-10  
    100  
    160  
    250  
    -
    160  
    250  
    375  
    -
    C
    CE  
    I = 500 mA, V = 1 V, BCX69-16  
    C
    CE  
    I = 500 mA, V = 1 V, BCX69-25  
    C
    CE  
    I = 1 A, V = 1 V  
    C
    CE  
    1)  
    Collector-emitter saturation voltage  
    I = 1 A, I = 100 mA  
    V
    -
    -
    0.5  
    V
    CEsat  
    C
    B
    1)  
    Base-emitter voltage  
    I = 5 mA, V = 10 V  
    V
    BE(ON)  
    -
    -
    0.6  
    -
    -
    1
    C
    CE  
    I = 1 A, V = 1 V  
    C
    CE  
    AC Characteristics  
    Transition frequency  
    -
    100  
    -
    MHz  
    f
    T
    I = 100 mA, V = 5 V, f = 20 MHz  
    C
    CE  
    1
    Pulse test: t < 300µs; D < 2%  
    2011-10-05  
    2
    BCX69...  
    DC current gain h = ƒ(I )  
    Collector-emitter saturation voltage  
    FE  
    C
    V
    = 1 V  
    I = ƒ(V  
    ), h = 10  
    CE  
    C
    CEsat  
    FE  
    BCX 69  
    EHP00475  
    BCX 69  
    EHP00473  
    10 4  
    mA  
    103  
    5
    hFE  
    Ι C  
    100 ˚C  
    10 3  
    5
    25 ˚C  
    102  
    5
    -50 ˚C  
    100 ˚C  
    25 ˚C  
    -50 ˚C  
    10 2  
    5
    101  
    5
    10 1  
    5
    10 0  
    100  
    0
    0.2  
    0.4  
    0.6  
    V
    0.8  
    100  
    5 101  
    5 10 2  
    5 103  
    Ι C  
    10 4  
    mA  
    VCE sat  
    Base-emitter saturation voltage  
    Collector current I = ƒ(V )  
    C
    BE  
    I = ƒ(V  
    ), h = 10  
    V
    = 1V  
    C
    BEsat  
    FE  
    CE  
    BCX 69  
    EHP00474  
    104  
    BCX 69  
    EHP00472  
    104  
    mA  
    mA  
    Ι C  
    Ι C  
    103  
    5
    103  
    5
    ˚C  
    ˚C  
    -50˚C  
    100  
    25  
    ˚C  
    ˚C  
    -50 ˚C  
    100  
    25  
    102  
    5
    102  
    5
    101  
    5
    101  
    5
    100  
    100  
    0
    0.2  
    0.4  
    0.6  
    0.8  
    1.0  
    1.2  
    V
    0
    0.2  
    0.4  
    0.6  
    0.8  
    1.0  
    1.2  
    V
    VBE sat  
    VBE  
    2011-10-05  
    3
    BCX69...  
    Collector cutoff current I  
    = ƒ(T )  
    Transition frequency f = ƒ(I )  
    CBO  
    A
    T
    C
    V
    = 25 V  
    V
    = 5 V  
    CB  
    CE  
    BCX 69  
    EHP00471  
    BCX 69  
    EHP00469  
    105  
    103  
    nA  
    MHz  
    5
    Ι CB0  
    max  
    f T  
    104  
    5
    103  
    5
    102  
    typ  
    102  
    5
    5
    101  
    5
    100  
    0
    101  
    100  
    5
    10 1  
    5
    102  
    10 3  
    50  
    100  
    150  
    ˚C  
    TA  
    mA  
    Ι C  
    Total power dissipation P = ƒ(T )  
    Permissible Pulse Load R  
    = ƒ(t )  
    thJS p  
    tot  
    S
    10 2  
    3.5  
    W
    2.5  
    2
    10 1  
    10 0  
    10 -1  
    D = 0,5  
    0,2  
    1.5  
    1
    0,1  
    0,05  
    0,02  
    0,01  
    0,005  
    0
    0.5  
    0
    0
    15 30 45 60 75 90 105 120  
    150  
    10 -6  
    10 -5  
    10 -4  
    10 -3  
    10 -2  
    10 0  
    °C  
    s
    T
    t
    p
    S
    2011-10-05  
    4
    BCX69...  
    Permissible Pulse Load  
    P
    /P  
    = ƒ(t )  
    totmax totDC  
    p
    10 3  
    -
    D = 0  
    0.005  
    0.01  
    0.02  
    0.05  
    0.1  
    10 2  
    10 1  
    10 0  
    0.2  
    0.5  
    10 -6  
    10 -5  
    10 -4  
    10 -3  
    10 -2  
    10 0  
    s
    t
    p
    2011-10-05  
    5
    Package SOT89  
    BCX69...  
    Package Outline  
    0.1  
    4.5  
    B
    0.1  
    1.5  
    45˚  
    0.25  
    0.2 MAX.1)  
    0.05  
    0.2  
    1.6  
    0.15  
    1
    2
    3
    1.5  
    0.1  
    0.35  
    +0.2  
    -0.1  
    0.45  
    M
    0.15  
    B
    x3  
    3
    0.2  
    B
    1) Ejector pin markings possible  
    Foot Print  
    2.0  
    0.8  
    0.8  
    0.7  
    Marking Layout (Example)  
    BAW78D  
    Type code  
    Pin 1  
    2005, June  
    Date code (YM)  
    Manufacturer  
    Standard Packing  
    Reel ø180 mm = 1.000 Pieces/Reel  
    Reel ø330 mm = 4.000 Pieces/Reel  
    0.2  
    8
    Pin 1  
    1.6  
    4.3  
    2011-10-05  
    6
    BCX69...  
    Edition 2009-11-16  
    Published by  
    Infineon Technologies AG  
    81726 Munich, Germany  
    2009 Infineon Technologies AG  
    All Rights Reserved.  
    Legal Disclaimer  
    The information given in this document shall in no event be regarded as a guarantee  
    of conditions or characteristics. With respect to any examples or hints given herein,  
    any typical values stated herein and/or any information regarding the application of  
    the device, Infineon Technologies hereby disclaims any and all warranties and  
    liabilities of any kind, including without limitation, warranties of non-infringement of  
    intellectual property rights of any third party.  
    Information  
    For further information on technology, delivery terms and conditions and prices,  
    please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
    Warnings  
    Due to technical requirements, components may contain dangerous substances.  
    For information on the types in question, please contact the nearest Infineon  
    Technologies Office.  
    Infineon Technologies components may be used in life-support devices or systems  
    only with the express written approval of Infineon Technologies, if a failure of such  
    components can reasonably be expected to cause the failure of that life-support  
    device or system or to affect the safety or effectiveness of that device or system.  
    Life support devices or systems are intended to be implanted in the human body or  
    to support and/or maintain and sustain and/or protect human life. If they fail, it is  
    reasonable to assume that the health of the user or other persons may be  
    endangered.  
    2011-10-05  
    7
    配单直通车
    BCX69-25E6327产品参数
    型号:BCX69-25E6327
    生命周期：Transferred
    IHS 制造商：SIEMENS A G
    包装说明：SMALL OUTLINE, R-PSSO-F3
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    风险等级：5.42
    Is Samacsys：N
    外壳连接：COLLECTOR
    最大集电极电流 (IC)：1 A
    集电极-发射极最大电压：20 V
    配置：SINGLE
    最小直流电流增益 (hFE)：160
    JESD-30 代码：R-PSSO-F3
    元件数量：1
    端子数量：3
    最高工作温度：150 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：SMALL OUTLINE
    极性/信道类型：PNP
    功耗环境最大值：1 W
    认证状态：Not Qualified
    表面贴装：YES
    端子形式：FLAT
    端子位置：SINGLE
    晶体管元件材料：SILICON
    标称过渡频率 (fT)：100 MHz
    VCEsat-Max：0.5 V
    Base Number Matches：1
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