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产品型号BCF30R的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BCF29; BCF30  
PNP general purpose transistors  
1997 May 22  
Product specification  
Supersedes data of September 1994  
File under Discrete Semiconductors, SC04  
Philips Semiconductors  
Product specification  
PNP general purpose transistors  
BCF29; BCF30  
FEATURES  
PINNING  
PIN  
Low current (max. 100 mA)  
Low voltage (max. 32 V).  
DESCRIPTION  
1
2
3
base  
emitter  
collector  
APPLICATIONS  
Low level, low noise general purpose applications in  
thick and thin-film circuits.  
handbook, halfpage  
3
3
DESCRIPTION  
PNP transistor in a SOT23 plastic package.  
NPN complements: BCF32 and BCF33.  
1
2
MARKING  
1
2
TYPE NUMBER  
BCF29  
MARKING CODE  
Top view  
MAM256  
C7p  
C8p  
Fig.1 Simplified outline (SOT23) and symbol.  
BCF30  
QUICK REFERENCE DATA  
SYMBOL  
VCBO  
VCEO  
ICM  
PARAMETER  
collector-base voltage  
CONDITIONS  
MIN.  
MAX.  
32  
UNIT  
open emitter  
open base  
V
V
collector-emitter voltage  
peak collector current  
total power dissipation  
DC current gain  
BCF29  
32  
200  
250  
mA  
Ptot  
Tamb 25 °C  
mW  
hFE  
IC = 2 mA; VCE = 5 V  
120  
215  
100  
260  
500  
BCF30  
fT  
transition frequency  
IC = 10 mA; VCE = 5 V; f = 100 MHz  
MHz  
1997 May 22  
2
Philips Semiconductors  
Product specification  
PNP general purpose transistors  
BCF29; BCF30  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
32  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
open base  
32  
open collector  
5  
100  
200  
100  
250  
mA  
mA  
mA  
mW  
°C  
ICM  
IBM  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
Tamb 25 °C; note 1  
65  
+150  
150  
°C  
Tamb  
65  
+150  
°C  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to ambient note 1  
500  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
1997 May 22  
3
Philips Semiconductors  
Product specification  
PNP general purpose transistors  
BCF29; BCF30  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
IE = 0; VCB = 32 V  
MIN. TYP. MAX. UNIT  
ICBO  
collector cut-off current  
100 nA  
10 µA  
IE = 0; VCB = 32 V; Tj = 100 °C  
IC = 0; VEB = 5 V  
IEBO  
hFE  
emitter cut-off current  
DC current gain  
BCF29  
100 nA  
IC = 10 µA; VCE = 5 V  
90  
BCF30  
150  
hFE  
DC current gain  
BCF29  
IC = 2 mA; VCE = 5 V  
120  
215  
260  
BCF30  
500  
VCEsat  
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA  
IC = 50 mV; IB = 2.5 mA  
80  
150  
720  
810  
300 mV  
mV  
mV  
mV  
VBEsat  
base-emitter saturation voltage  
IC = 10 mA; IB = 0.5 mA  
IC = 50 mA; IB = 2.5 mA  
IC = 2 mA; VCE = 5 V  
VBE  
Cc  
fT  
base-emitter voltage  
collector capacitance  
transition frequency  
noise figure  
600  
750 mV  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
4.5  
4
pF  
IC = 10 mA; VCE = 5 V; f = 100 MHz 100  
MHz  
dB  
F
IC = 200 µA; VCE = 5 V; RS = 2 k;  
1
f = 1 kHz; B = 200 Hz  
1997 May 22  
4
Philips Semiconductors  
Product specification  
PNP general purpose transistors  
BCF29; BCF30  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M  
B
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT23  
1997 May 22  
5
Philips Semiconductors  
Product specification  
PNP general purpose transistors  
BCF29; BCF30  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1997 May 22  
6
Philips Semiconductors  
Product specification  
PNP general purpose transistors  
BCF29; BCF30  
NOTES  
1997 May 22  
7
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,  
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466  
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
Tel. +43 1 60 101, Fax. +43 1 60 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Belgium: see The Netherlands  
Brazil: see South America  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
51 James Bourchier Blvd., 1407 SOFIA,  
Tel. +359 2 689 211, Fax. +359 2 689 102  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
Tel. +852 2319 7888, Fax. +852 2319 7700  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,  
Tel. +65 350 2538, Fax. +65 251 6500  
Colombia: see South America  
Czech Republic: see Austria  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,  
Tel. +45 32 88 2636, Fax. +45 31 57 0044  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,  
Tel. +27 11 470 5911, Fax. +27 11 470 5494  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615800, Fax. +358 9 61580920  
South America: Rua do Rocio 220, 5th floor, Suite 51,  
04552-903 São Paulo, SÃO PAULO - SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 829 1849  
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 3 301 6312, Fax. +34 3 301 4107  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 632 2000, Fax. +46 8 632 2745  
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,  
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2686, Fax. +41 1 481 7730  
Hungary: see Austria  
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.  
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874  
Indonesia: see Singapore  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
Tel. +90 212 279 2770, Fax. +90 212 282 6707  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,  
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
Middle East: see Italy  
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,  
Internet: http://www.semiconductors.philips.com  
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1997  
SCA54  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
117047/00/02/pp8  
Date of release: 1997 May 22  
Document order number: 9397 750 02356  
配单直通车
BCF30R产品参数
型号:BCF30R
生命周期:Obsolete
IHS 制造商:NXP SEMICONDUCTORS
包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.21.00.75
风险等级:5.74
其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:32 V
配置:SINGLE
最小直流电流增益 (hFE):215
JESD-30 代码:R-PDSO-G3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性/信道类型:PNP
认证状态:Not Qualified
表面贴装:YES
端子形式:GULL WING
端子位置:DUAL
晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHz
VCEsat-Max:0.3 V
Base Number Matches:1
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