欢迎访问ic37.com |
会员登录 免费注册
发布采购
所在地: 型号: 精确
  • 批量询价
  •  
  • 供应商
  • 型号
  • 数量
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
  •  
  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • BCM85622WIFSBG
  • 数量-
  • 厂家-
  • 封装-
  • 批号-
  • -
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
更多
  • BCM85622WIFSBG图
  • 万三科技(深圳)有限公司

     该会员已使用本站2年以上
  • BCM85622WIFSBG
  • 数量660000 
  • 厂家Maxlinear 
  • 封装 
  • 批号23+ 
  • 支持实单/只做原装
  • QQ:3008961398QQ:3008961398 复制
  • 0755-21006672 QQ:3008961398
  • BCM85622WIFSBG图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • BCM85622WIFSBG
  • 数量26890 
  • 厂家BROADCOM 
  • 封装BGA 
  • 批号全新环保批次 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:1435424310QQ:1435424310 复制
  • 0755-84507451 QQ:1435424310
  • BCM85622WIFSBG图
  • 深圳市惠诺德电子有限公司

     该会员已使用本站7年以上
  • BCM85622WIFSBG
  • 数量29500 
  • 厂家Broadcom Limited 
  • 封装ADVANCED BASEBAND SYSTEM-ON-A- 
  • 批号21+ 
  • 只做原装现货代理
  • QQ:1211267741QQ:1211267741 复制
    QQ:1034782288QQ:1034782288 复制
  • 159-7688-9073 QQ:1211267741QQ:1034782288
  • BCM85622WIFSBG图
  • 万三科技(深圳)有限公司

     该会员已使用本站2年以上
  • BCM85622WIFSBG
  • 数量6500000 
  • 厂家博通 
  • 封装原厂原装 
  • 批号22+ 
  • 万三科技 秉承原装 实单可议
  • QQ:3008961396QQ:3008961396 复制
  • 0755-21008751 QQ:3008961396

产品型号BCM856BS的Datasheet PDF文件预览

BCM856BS; BCM856BS/DG  
BCM856DS; BCM856DS/DG  
PNP/PNP matched double transistors  
Rev. 01 — 7 August 2008  
Product data sheet  
1. Product profile  
1.1 General description  
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic  
packages. The transistors are fully isolated internally.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Package configuration  
very small  
JEITA  
BCM856BS  
SOT363  
SC-88  
BCM856BS/DG  
BCM856DS  
SOT457  
SC-74  
small  
BCM856DS/DG  
1.2 Features  
I Current gain matching  
I Base-emitter voltage matching  
I Drop-in replacement for standard double transistors  
I AEC-Q101 qualified  
1.3 Applications  
I Current mirror  
I Differential amplifier  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO collector-emitter voltage  
IC  
open base  
-
-
65  
V
collector current  
DC current gain  
-
-
100  
450  
mA  
hFE  
VCE = 5 V;  
IC = 2 mA  
200  
290  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
Table 2.  
Quick reference data …continued  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per device  
hFE1/hFE2  
[1]  
[2]  
hFE matching  
VCE = 5 V;  
IC = 2 mA  
0.9  
-
1
-
-
VBE1VBE2 VBE matching  
VCE = 5 V;  
IC = 2 mA  
2
mV  
[1] The smaller of the two values is taken as the numerator.  
[2] The smaller of the two values is subtracted from the larger value.  
2. Pinning information  
Table 3.  
Pinning  
Pin  
1
Description  
emitter TR1  
base TR1  
Simplified outline  
Graphic symbol  
6
5
4
6
5
4
2
3
collector TR2  
emitter TR2  
base TR2  
TR2  
TR1  
4
5
1
2
3
1
2
3
6
collector TR1  
001aab555  
sym018  
3. Ordering information  
Table 4.  
Ordering information  
Type number  
Package  
Name  
Description  
plastic surface-mounted package; 6 leads  
Version  
BCM856BS  
SC-88  
SOT363  
BCM856BS/DG  
BCM856DS  
SC-74  
plastic surface-mounted package (TSOP6); 6 leads SOT457  
BCM856DS/DG  
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
2 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
4. Marking  
Table 5.  
Marking codes  
Type number  
BCM856BS  
Marking code[1]  
*BS  
PB*  
DS  
BCM856BS/DG  
BCM856DS  
BCM856DS/DG  
R9  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Per transistor  
Conditions  
Min  
Max  
Unit  
VCBO  
VCEO  
VEBO  
IC  
collector-base voltage  
open emitter  
open base  
-
-
-
-
-
80  
65  
5  
V
collector-emitter voltage  
emitter-base voltage  
collector current  
V
open collector  
V
100  
200  
mA  
mA  
ICM  
peak collector current  
single pulse;  
tp 1 ms  
Ptot  
total power dissipation  
Tamb 25 °C  
[1]  
[1]  
BCM856BS (SOT363)  
BCM856BS/DG (SOT363)  
-
-
200  
250  
mW  
mW  
BCM856DS (SOT457)  
BCM856DS/DG (SOT457)  
Per device  
Ptot  
total power dissipation  
Tamb 25 °C  
[1]  
[1]  
BCM856BS (SOT363)  
BCM856BS/DG (SOT363)  
-
-
300  
380  
mW  
mW  
BCM856DS (SOT457)  
BCM856DS/DG (SOT457)  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
150  
°C  
°C  
°C  
Tamb  
Tstg  
55  
65  
+150  
+150  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
3 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
6. Thermal characteristics  
Table 7.  
Thermal characteristics  
Symbol Parameter  
Per transistor  
Conditions  
Min  
Typ  
Max Unit  
Rth(j-a)  
thermal resistance from junction to  
ambient  
in free air  
[1]  
[1]  
BCM856BS (SOT363)  
BCM856BS/DG (SOT363)  
-
-
-
-
625  
500  
K/W  
K/W  
BCM856DS (SOT457)  
BCM856DS/DG (SOT457)  
Per device  
Rth(j-a)  
thermal resistance from junction to  
ambient  
in free air  
[1]  
[1]  
BCM856BS (SOT363)  
BCM856BS/DG (SOT363)  
-
-
-
-
416  
328  
K/W  
K/W  
BCM856DS (SOT457)  
BCM856DS/DG (SOT457)  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
7. Characteristics  
Table 8.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Per transistor  
Conditions  
Min  
Typ  
Max  
Unit  
ICBO  
collector-base cut-off  
current  
VCB = 30 V;  
IE = 0 A  
-
-
-
-
15  
5  
nA  
VCB = 30 V;  
IE = 0 A;  
µA  
Tj = 150 °C  
IEBO  
hFE  
emitter-base cut-off  
current  
VEB = 5 V;  
IC = 0 A  
-
-
100  
nA  
DC current gain  
VCE = 5 V;  
IC = 10 µA  
-
250  
290  
50  
200  
760  
920  
-
VCE = 5 V;  
IC = 2 mA  
200  
450  
200  
400  
-
VCEsat  
collector-emitter  
saturation voltage  
IC = 10 mA;  
IB = 0.5 mA  
-
-
-
-
mV  
mV  
mV  
mV  
IC = 100 mA;  
IB = 5 mA  
[1]  
[1]  
VBEsat  
base-emitter saturation  
voltage  
IC = 10 mA;  
IB = 0.5 mA  
IC = 100 mA;  
IB = 5 mA  
-
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
4 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
Table 8.  
Characteristics …continued  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
[2]  
[2]  
VBE  
base-emitter voltage  
VCE = 5 V;  
IC = 2 mA  
600  
650  
700  
mV  
VCE = 5 V;  
IC = 10 mA  
-
-
-
-
760  
mV  
pF  
Cc  
Ce  
fT  
collector capacitance  
emitter capacitance  
transition frequency  
noise figure  
VCB = 10 V;  
IE = ie = 0 A;  
f = 1 MHz  
2.2  
VEB = 0.5 V;  
IC = ic = 0 A;  
f = 1 MHz  
-
10  
-
-
-
pF  
VCE = 5 V;  
IC = 10 mA;  
f = 100 MHz  
100  
-
175  
1.6  
MHz  
dB  
NF  
VCE = 5 V;  
IC = 0.2 mA;  
RS = 2 k;  
f = 10 Hz to  
15.7 kHz  
VCE = 5 V;  
-
3.1  
-
dB  
IC = 0.2 mA;  
RS = 2 k;  
f = 1 kHz;  
B = 200 Hz  
Per device  
[3]  
[4]  
hFE1/hFE2 hFE matching  
VCE = 5 V;  
IC = 2 mA  
0.9  
-
1
-
-
VBE1VBE2 VBE matching  
VCE = 5 V;  
IC = 2 mA  
2
mV  
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.  
[2] VBE decreases by about 2 mV/K with increasing temperature.  
[3] The smaller of the two values is taken as the numerator.  
[4] The smaller of the two values is subtracted from the larger value.  
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
5 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
006aaa540  
006aaa541  
0.20  
600  
I
(mA) = 2.5  
2.25  
B
I
C
(A)  
h
FE  
2.0  
1.75  
1.5  
1.25  
0.16  
(1)  
(2)  
400  
0.12  
0.08  
0.04  
0
1.0  
0.75  
0.5  
200  
(3)  
0.25  
0
10  
2  
1  
2
3
0
2  
4  
6  
8  
V
10  
(V)  
10  
1  
10  
10  
10  
I (mA)  
C
CE  
Tamb = 25 °C  
VCE = 5 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
Fig 1. Collector current as a function of  
Fig 2. DC current gain as a function of collector  
current; typical values  
collector-emitter voltage; typical values  
006aaa542  
006aaa543  
1.3  
10  
V
BEsat  
(V)  
V
CEsat  
(V)  
1.1  
0.9  
0.7  
0.5  
0.3  
0.1  
1  
(1)  
(2)  
(3)  
1  
(1)  
(2)  
(3)  
10  
10  
2  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
10  
1  
10  
10  
10  
I
(mA)  
I (mA)  
C
C
IC/IB = 20  
IC/IB = 20  
(1) Tamb = 55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 55 °C  
Fig 3. Base-emitter saturation voltage as a function  
of collector current; typical values  
Fig 4. Collector-emitter saturation voltage as a  
function of collector current; typical values  
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
6 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
006aaa544  
006aaa545  
3
1  
10  
V
BE  
(V)  
f
T
(MHz)  
0.8  
2
10  
0.6  
0.4  
10  
1  
2
3
2
10  
1  
10  
10  
10  
1  
10  
10  
I
(mA)  
I (mA)  
C
C
VCE = 5 V; Tamb = 25 °C  
VCE = 5 V; Tamb = 25 °C  
Fig 5. Base-emitter voltage as a function of collector  
current; typical values  
Fig 6. Transition frequency as a function of collector  
current; typical values  
006aaa546  
006aaa547  
8
15  
C
e
C
c
(pF)  
13  
(pF)  
6
4
2
0
11  
9
7
5
0
2  
4  
6  
8  
V
10  
(V)  
0
2  
4  
6  
V
(V)  
EB  
CB  
f = 1 MHz; Tamb = 25 °C  
f = 1 MHz; Tamb = 25 °C  
Fig 7. Collector capacitance as a function of  
collector-base voltage; typical values  
Fig 8. Emitter capacitance as a function of  
emitter-base voltage; typical values  
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
7 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
8. Application information  
V−  
V
CC  
OUT1  
IN1  
OUT2  
IN2  
TR1  
TR2  
R1  
l
out  
TR1  
TR2  
V+  
006aaa524  
006aaa526  
Fig 9. Current mirror  
Fig 10. Differential amplifier  
9. Test information  
9.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
10. Package outline  
2.2  
1.8  
1.1  
0.8  
3.1  
2.7  
1.1  
0.9  
0.45  
0.15  
6
5
4
6
5
4
0.6  
0.2  
2.2 1.35  
2.0 1.15  
3.0 1.7  
2.5 1.3  
pin 1  
index  
pin 1 index  
1
2
3
1
2
3
0.25  
0.10  
0.3  
0.2  
0.26  
0.10  
0.40  
0.25  
0.65  
0.95  
1.3  
1.9  
Dimensions in mm  
06-03-16  
Dimensions in mm  
04-11-08  
Fig 11. Package outline SOT363 (SC-88)  
Fig 12. Package outline SOT457 (SC-74)  
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
8 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
11. Packing information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package Description  
Packing quantity  
3000  
-115  
-125  
-115  
-125  
-115  
-125  
-115  
-125  
10000  
-135  
-165  
-135  
-165  
-135  
-165  
-135  
-165  
[2]  
[3]  
[2]  
[3]  
[2]  
[3]  
[2]  
[3]  
BCM856BS  
SOT363 4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
BCM856BS/DG SOT363 4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
BCM856DS  
SOT457 4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
BCM856DS/DG SOT457 4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
[1] For further information and the availability of packing methods, see Section 15.  
[2] T1: normal taping  
[3] T2: reverse taping  
12. Soldering  
2.65  
solder lands  
0.4 (2×)  
1.5  
2.35  
0.6  
(4×)  
0.5  
(4×)  
solder resist  
solder paste  
0.5  
(4×)  
0.6  
(2×)  
occupied area  
Dimensions in mm  
0.6  
(4×)  
1.8  
sot363_fr  
Fig 13. Reflow soldering footprint SOT363 (SC-88)  
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
9 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
1.5  
solder lands  
2.5  
0.3  
4.5  
solder resist  
occupied area  
1.5  
Dimensions in mm  
preferred transport  
direction during soldering  
1.3  
1.3  
2.45  
5.3  
sot363_fw  
Fig 14. Wave soldering footprint SOT363 (SC-88)  
3.45  
1.95  
0.55  
(6×)  
solder lands  
solder resist  
0.45  
(6×)  
0.95  
3.3 2.825  
0.95  
solder paste  
occupied area  
0.7  
Dimensions in mm  
(6×)  
0.8  
(6×)  
2.4  
sot457_fr  
Fig 15. Reflow soldering footprint SOT457 (SC-74)  
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
10 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
5.3  
1.5  
(4×)  
solder lands  
1.475  
1.475  
solder resist  
0.45  
(2×)  
5.05  
occupied area  
Dimensions in mm  
preferred transport  
direction during soldering  
1.45  
(6×)  
2.85  
sot457_fw  
Fig 16. Wave soldering footprint SOT457 (SC-74)  
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
11 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
13. Revision history  
Table 10. Revision history  
Document ID  
Release date  
20080807  
Data sheet status  
Change notice  
Supersedes  
BCM856BS_BCM856DS_1  
Product data sheet  
-
-
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
12 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
14. Legal information  
14.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
14.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
14.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
14.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
15. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BCM856BS_BCM856DS_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 7 August 2008  
13 of 14  
BCM856BS; BCM856DS  
NXP Semiconductors  
PNP/PNP matched double transistors  
16. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Application information. . . . . . . . . . . . . . . . . . . 8  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8  
Quality information . . . . . . . . . . . . . . . . . . . . . . 8  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Packing information. . . . . . . . . . . . . . . . . . . . . . 9  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12  
3
4
5
6
7
8
9
9.1  
10  
11  
12  
13  
14  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
14.1  
14.2  
14.3  
14.4  
15  
16  
Contact information. . . . . . . . . . . . . . . . . . . . . 13  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2008.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 7 August 2008  
Document identifier: BCM856BS_BCM856DS_1  
配单直通车
BCM856BS产品参数
型号:BCM856BS
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Transferred
IHS 制造商:NXP SEMICONDUCTORS
零件包装代码:SC-88
包装说明:PLASTIC, SMD, SC-88, 6 PIN
针数:6
Reach Compliance Code:compliant
ECCN代码:EAR99
风险等级:5.26
最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V
配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G6
JESD-609代码:e3
湿度敏感等级:1
元件数量:2
端子数量:6
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:YES
端子面层:Tin (Sn)
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER
晶体管元件材料:SILICON
标称过渡频率 (fT):175 MHz
Base Number Matches:1
  •  
  • 供货商
  • 型号 *
  • 数量*
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
批量询价选中的记录已选中0条,每次最多15条。
 复制成功!