BCP68-16各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

产品型号BCP68-16的概述

BCP68-16芯片概述 BCP68-16是一款广泛应用于各种电子设备中的高性能晶体管，属于NPN型双极型晶体管。作为一种小型化的半导体器件，BCP68-16以其出色的电气特性和理想的封装方案，成为了众多电路设计中的主流选择。这款芯片通常用于信号放大、开关控制以及电流驱动等场合，尤其是在高频应用和小型化设计中展现出显著的优势。 BCP68-16的详细参数 BCP68-16芯片的参数可从多个方面来分析。首先，该芯片具有一定的电压和电流处理能力。其最大集电极-基极电压（V_CBO）可达到45V，而最大集电极-发射极电压（V_CE）为40V。更重要的是，BCP68-16的最大集电极电流（I_C）为500mA，这使得它在多种电流驱动应用中都能够妥善工作。此外，BCP68-16的增益（h_FE）范围在100至600之间，这使得它非常适合于信号放大。其工作频率可达到150MHz，进一步提高了其在...

产品型号BCP68-16的Datasheet PDF文件预览

NPN Silicon AF Transistor

BCP 68

● For general AF application

● High collector current

● High current gain

● Low collector-emitter saturation voltage

● Complementary type: BCP 69 (PNP)

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

1

2

3

4

BCP 68

Q62702-C2126

B

C

E

C

SOT-223

BCP 68-10

BCP 68-16

BCP 68-25

BCP 68-10 Q62702-C2127

BCP 68-16 Q62702-C2128

BCP 68-25 Q62702-C2129

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

V

CE0

CES

20

25

V

Collector-base voltage

Emitter-base voltage

Collector current

V

CB0

EB0

25

5

I

C

1

A

Peak collector current

Base current

CM

2

B

100

200

1.5

150

mA

Peak base current

Total power dissipation, T

Junction temperature

BM

S

= 124 ˚C²⁾

P

tot

W

T

j

˚C

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

R

th JA

th JS

≤ 72

≤ 17

K/W

Junction - soldering point

R

1)

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

2)

01.97

Semiconductor Group

1

BCP 68

Electrical Characteristics

at T = 25 ˚C, unless otherwise specified.

A

Parameter

Symbol

Values

typ.

Unit

min.

max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CE0

V(BR)CES

V(BR)CB0

V(BR)EB0

20

25

5

–

V

IC

= 30 mA, I

B

= 0

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

Collector-base breakdown voltage

= 10 µA, I = 0

IC

B

Emitter-base breakdown voltage

= 10 µA, I = 0

IE

B

Collector-base cutoff current

I

CB0

EB0

VCB = 25 V

–

100

nA

µA

V

CB = 25 V, T

A

= 150 ˚C

Emitter-base cutoff current

= 0

I

–

100

nA

–

V

EB = 5 V, I

C

DC current gain¹⁾

hFE

50

85

100

160

60

–

100

160

250

–

I

C

= 5 mA, VCE = 10 V

= 500 mA, VCE = 1 V

375

160

250

375

–

IC

BCP 68

BCP 68-10

BCP 68-16

BCP 68-25

IC

= 1 A, VCE = 1 V

Collector-emitter saturation voltage¹⁾

= 1 A, I = 100 mA

V

CEsat

BE

–

0.5

V

IC

B

Base-emitter voltage¹⁾

V

–

0.6

–

1

I

C

= 5 mA, VCE = 10 V

= 1 A, VCE = 1 V

IC

AC characteristics

Transition frequency

fT

–

100

–

MHz

IC

= 100 mA, VCE = 5 V, f = 100 MHz

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

BCP 68

Total power dissipation Ptot = f (T

A

*; TS

)

Transition frequency f

T

= f (I )

C

* Package mounted on epoxy

V^CE= 5 V, f = 100 MHz

Collector cutoff current I^CB0= f (T

A

)

DC current gain h^FE= f (I )

C

V

CB = 25 V

VCB = 1 V

Semiconductor Group

3

BCP 68

Collector-emitter saturation voltage

Base-emitter saturation voltage

IC

= f (VCEsat

)

IC

= f (VBEsat)

h

FE = 10

h

FE = 10

Permissible pulse load Ptot max/Ptot DC = f (t )

p

Semiconductor Group

4

BCP68-16相关产品

BCP68-25 BCP68-25,115 BCP68-25,135 BCP68-25-QX BCP68-25.115 BCP68-25/T1 BCP68-25115 BCP68-25E6327 BCP68-25TA BCP68-25TC BCP68-NL BCP68.115 BCP68/25 BCP68/BCP68 BCP68/CA BCP68/T1 BCP6810 BCP68115 BCP6816 BCP6825 BCP6825E6327 BCP6825E6327XT BCP6825TA BCP6825TC BCP68D BCP68E-6327

型号:	BCP68-16
生命周期：	Contact Manufacturer
IHS 制造商：	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD
包装说明：	,
Reach Compliance Code：	unknown
风险等级：	5.59
Is Samacsys：	N
Base Number Matches：	1

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