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产品型号BCR1AM-14A的Datasheet PDF文件预览

Preliminary Datasheet  
BCR1AM-14A  
700V-1A-Triac  
R07DS1076EJ0100  
Rev.1.00  
Low Power Use  
May 30, 2013  
Features  
IT (RMS) : 1 A  
DRM :700 V  
Planar Type  
V
I
I
I
FGTI : 5 mA  
RGTI, IRGTIII : 5 mA or 3mA(IGT:item1)  
FGT III : 10 mA  
Outline  
RENESAS Package code: PRSS0003EA-A  
(Package name: TO-92*)  
2
1. T Terminal  
1
2. T Terminal  
2
3. Gate Terminal  
3
1
1
3
2
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
14  
Repetitive peak off-state voltageNote1  
Non- repetitive peak off-state voltageNote1  
Notes: 1. Gate open.  
VDRM  
VDSM  
700  
840  
V
V
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
IT (RMS)  
ITSM  
I2t  
1.0  
A
Commercial frequency, sine full wave  
360° conduction, , Tc= 56°CNote3  
Surge on-state current  
I2t for fusing  
10  
A
60Hz sinewave 1 full cycle, peak value,  
non-repetitive  
0.41  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
1
W
W
V
0.1  
6
Peak gate current  
0.5  
A
Junction temperature  
Storage temperature  
Mass  
Tj  
– 40 to +125  
– 40 to +125  
0.23  
°C  
°C  
g
Tstg  
Typical value  
R07DS1076EJ0100 Rev.1.00  
May 30, 2013  
Page 1 of 3  
BCR1AM-14A  
Preliminary  
Electrical Characteristics  
BCR1AM-14A-1  
BCR1AM-14A  
(IGT item : 1)  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
Unit  
mA  
V
Test conditions  
Min.  
Typ. Max. Min. Typ. Max.  
Tj = 125°C  
VDRM applied  
IDRM  
VTM  
0.5  
1.6  
0.5  
1.6  
Tc = 25°C, ITM = 1.5 A  
instantaneous  
measurement  
Gate trigger voltageNote2  
I
VFGT  
2.0  
2.0  
2.0  
2.0  
5
2.0  
2.0  
2.0  
2.0  
5
V
V
Tj = 25°C, VD = 6 V  
RL = 6 Ω, RG = 330 Ω  
Ι
II  
VRGT  
Ι
ΙΙΙ  
ΙΙΙ  
Ι
III  
IV  
I
VRGT  
VFGT  
IFGT  
IRGT  
V
V
Gate trigger curentNote2  
mA  
mA  
mA  
Tj = 25°C, VD = 6 V  
RL = 6 Ω, RG = 330 Ω  
II  
3
5
Ι
III  
IRGT  
3
5
ΙΙΙ  
IV  
IFGT  
10  
10  
mA  
V
ΙΙΙ  
Tj = 125°C  
VD = 1/2 VDRM  
Junction to caseNote3  
50 °C/W  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.1  
0.1  
Rth (j-c)  
50  
Tj = 125°C  
V/μs  
Critical-rate of rise of off-state  
commutating voltageNote4  
(dv/dt)c 1.0  
2.0  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.  
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
Commutating voltage and current waveforms  
Test conditions  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125°C  
(di/dt)c  
2. Rate of decay of on-state commutating current  
(di/dt)c = – 0.5 A/ms  
Time  
Time  
Main Current  
Main Voltage  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
R07DS1076EJ0100 Rev.1.00  
May 30, 2013  
Page 2 of 3  
BCR1AM-14A  
Preliminary  
Package Dimensions  
Package Name  
JEITA Package Code  
SC-43A  
RENESAS Code  
Previous Code  
MASS[Typ.]  
Unit: mm  
TO-92*  
PRSS0003EA-A  
T920  
0.23g  
φ5.0Max  
4.4  
1.251.25  
Circumscribed circle φ0.7  
Ordering Information  
Orderable Part Number  
BCR1AM-14A#B00  
Packing  
Bag  
Quantity  
500 pcs. Straight type  
Remark  
BCR1AM-14A-1#B00  
BCR1AM-14A-A6#B00  
BCR1AM-14A-A9#B00  
BCR1AM-14A-TB#B00  
BCR1AM-14A-1TB#B00  
Bag  
500 pcs. Straight type, IGT item : 1  
500 pcs. A6 Lead form  
500 pcs. A9 Lead form  
2000 pcs.  
Bag  
Bag  
Adhesive Tape  
Adhesive Tape  
2000 pcs. IGT item : 1  
Note: Please confirm the specification about the shipping in detail.  
R07DS1076EJ0100 Rev.1.00  
May 30, 2013  
Page 3 of 3  
SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/" for the latest and detailed information.  
Renesas Electronics America Inc.  
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.  
Tel: +1-408-588-6000, Fax: +1-408-588-6130  
Renesas Electronics Canada Limited  
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada  
Tel: +1-905-898-5441, Fax: +1-905-898-3220  
Renesas Electronics Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K  
Tel: +44-1628-651-700, Fax: +44-1628-651-804  
Renesas Electronics Europe GmbH  
Arcadiastrasse 10, 40472 Düsseldorf, Germany  
Tel: +49-211-65030, Fax: +49-211-6503-1327  
Renesas Electronics (China) Co., Ltd.  
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China  
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679  
Renesas Electronics (Shanghai) Co., Ltd.  
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China  
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898  
Renesas Electronics Hong Kong Limited  
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong  
Tel: +852-2886-9318, Fax: +852 2886-9022/9044  
Renesas Electronics Taiwan Co., Ltd.  
13F, No. 363, Fu Shing North Road, Taipei, Taiwan  
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670  
Renesas Electronics Singapore Pte. Ltd.  
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949  
Tel: +65-6213-0200, Fax: +65-6213-0300  
Renesas Electronics Malaysia Sdn.Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510  
Renesas Electronics Korea Co., Ltd.  
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea  
Tel: +82-2-558-3737, Fax: +82-2-558-5141  
© 2013 Renesas Electronics Corporation. All rights reserved.  
Colophon 2.2  
配单直通车
BCR1AM-14A#BD0产品参数
型号:BCR1AM-14A#BD0
Brand Name:Renesas
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
零件包装代码:TO-92
针数:3
制造商包装代码:PRSS0003DJ-A3
Reach Compliance Code:compliant
风险等级:5.73
触发设备类型:TRIAC
Base Number Matches:1
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