MITSUBISHI SEMICONDUCTOR TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol
Parameter
Conditions
Ratings
3.5
Unit
g
BCR20A
BCR20B
9.0
—
Weight (Typical value)
BCR20C
9.0
BCR20E
11
—
—
Soldering temperature
Mounting torque
BCR20A only, 10 sec.
230
30
°C
kg·cm
N·m
V
BCR20C only
2.94
1500
Viso
Isolated voltage
BCR20E only, Ta=25°C, AC 1 minute, T2 terminal to base
ELECTRICAL CHARACTERISTICS
Limits
Unit
mA
V
Symbol
IDRM
Parameter
Repetitive peak off-state current
On-state voltage
Test conditions
Min.
—
Typ.
—
Max.
3.0
Tj=125°C, VDRM applied
Tc=25°C, Tb=25°C (BCR20E only), ITM=30A, Instantaneous
VTM
—
—
1.5
measurement
!
@
#
!
@
#
—
—
—
—
—
—
0.2
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
V
V
✽2
Gate trigger voltage
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
V
mA
mA
mA
V
✽2
30
Gate trigger current
30
—
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VD=1/2VDRM
1.1
2.4
Rth (j-c)
Rth (j-b)
Junction to case (BCR20A, BCR20B, BCR20C)
Junction to base (BCR20E)
°C/W
°C/W
Critical-rate of rise of off-state
commutating voltage
✽3
—
—
V/µs
(dv/dt)c
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
(dv/dt) c
Voltage
class
VDRM
(V)
Commutating voltage and current waveforms
(inductive load)
Test conditions
Symbol
Min.
—
Unit
R
SUPPLY
1. Junction temperature
VOLTAGE
TIME
8
400
600
Tj=125°C
L
R
L
10
—
10
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–10A/ms
(di/dt)c
MAIN CURRENT
V/µs
TIME
TIME
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
10
(dv/dt)c
VD
Feb.1999