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产品型号BCR20CM-12LB_15的Datasheet PDF文件预览

Preliminary Datasheet  
BCR20CM-12LB  
R07DS1151EJ0100  
Rev.1.00  
600V - 20A - Triac  
Jan 29, 2014  
Medium Power Use  
Features  
IT (RMS) : 20 A  
DRM : 600 V  
FGTI, IRGTI, IRGT III :30 mA(20mA) Note6  
Tj: 150 °C  
Planar Passivation Type  
Non-Insulated Type  
V
I
N-G  
Outline  
Applications  
Vacuum cleaner, electric heater, light dimmer, copying machine, and controller for other motor and heater  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
12  
600  
720  
Repetitive peak off-state voltageNote1  
VDRM  
VDSM  
V
V
Non-repetitive peak off-state voltageNote1  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
IT (RMS)  
ITSM  
I2t  
20  
A
Commercial frequency, sine full wave  
360°conduction, Tc = 126°C Note3  
60 Hz sinewave 1 full cycle, peak value,  
non-repetitive  
Surge on-state current  
I2t for fusion  
200  
167  
A
A2s  
Value corresponding to 1 cycle of half  
wave 60 Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
5
W
W
V
0.5  
10  
2
Peak gate current  
A
Junction Temperature  
Storage temperature  
Mass  
Tj  
–40 to +150  
–40 to +150  
2.1  
°C  
°C  
g
Tstg  
Typical value  
R07DS1151EJ0100 Rev.1.00  
Jan 29, 2014  
Page 1 of 7  
BCR20CM-12LB  
Preliminary  
Electrical Characteristics  
Rated value  
Parameter  
Symbol  
Unit  
Test conditions  
Min.  
Typ.  
Max.  
2.0  
Repetitive peak off-state current  
IDRM  
mA  
Tj = 125°C, VDRM applied  
Tj = 150°C, VDRM applied  
3.0  
On-state voltage  
VTM  
1.5  
V
Tc = 25°C, ITM = 30A,  
instantaneous measurement  
Gate trigger voltageNote2  
Ι
ΙΙ  
ΙΙΙ  
Ι
VFGT  
1.5  
1.5  
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,  
RG = 330 Ω  
Ι
VRGT  
Ι
VRGT  
1.5  
V
ΙΙΙ  
Gate trigger curentNote2  
IFGT  
30 Note6  
30 Note6  
30 Note6  
mA  
mA  
mA  
Tj = 25°C, VD = 6 V, RL = 6 Ω,  
RG = 330 Ω  
Ι
ΙΙ  
ΙΙΙ  
IRGT  
Ι
IRGT  
ΙΙΙ  
Gate non-trigger voltage  
VGD  
0.2  
0.1  
10  
1
V
V
Tj = 125°C, VD = 1/2 VDRM  
Tj = 150°C, VD = 1/2 VDRM  
Junction to caseNote3, Note4  
Tj = 125°C  
Thermal resistance  
Rth (j-c)  
1.2  
°C/W  
V/μs  
Critical-rate of rise of off-state  
commutation voltageNote5  
Notes: 1. Gate open.  
(dv/dt)c  
Tj = 150°C  
2. Measurement using the gate trigger characteristics measurement circuit.  
3. Case temperature is measured at the T2 tab 1.5 mm apart from the molded case.  
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C /W.  
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.  
6. High sensitivity (IGT20 mA) is also available. (IGT item: 1)  
Test conditions  
1. Junction temperature  
Commutating voltage and current waveforms  
(inductive load)  
Tj = 125/150°C  
2. Peak off-state voltage  
VD = 400 V  
3. Rate of decay of on-state commutating current  
(di/dt)c = –10 A/ms  
R07DS1151EJ0100 Rev.1.00  
Jan 29, 2014  
Page 2 of 7  
BCR20CM-12LB  
Preliminary  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
103  
102  
101  
100  
240  
200  
160  
120  
80  
Tj = 150°C  
Tj = 25°C  
40  
0
0
1
2
3
4
100  
101  
102  
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics (I, II and III)  
103  
102  
101  
Typical Example  
V
= 10V  
GM  
P
= 5W  
GM  
101  
100  
P
=
G(AV)  
0.5W  
V
GT  
= 1.5V  
I
=
GM  
2A  
I
FGT I  
I
, I  
, I  
FGT I RGT I RGT III  
I
RGT I  
101  
101  
I
RGT III  
102  
103  
104  
–40  
0
40  
80  
120  
160  
Gate Current (mA)  
Junction Temperature (°C)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to case)  
103  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Typical Example  
102  
101  
–40  
101  
100  
101  
102  
103  
0
40  
80  
120  
Junction Temperature (°C)  
Conduction Time (Cycles at 60Hz)  
R07DS1151EJ0100 Rev.1.00  
Jan 29, 2014  
Page 3 of 7  
BCR20CM-12LB  
Preliminary  
Allowable Case Temperature vs.  
Maximum On-State Power Dissipation  
RMS On-State Current  
40  
160  
140  
120  
100  
80  
30  
360° Conduction  
Resistive,  
Curves apply regardless  
of conduction angle  
inductive loads  
20  
10  
0
60  
40  
360° Conduction  
Resistive,inductive  
loads  
20  
0
0
5
10  
15  
20  
25  
30  
0
10  
20  
30  
RMS On-State Current (A)  
RMS On-State Current (A)  
Allowable Ambient Temperature vs.  
RMS On-State Current  
Allowable Ambient Temperature vs.  
RMS On-State Current  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
Natural convection  
No fins  
All fins are black painted  
aluminum and greased  
Curves apply  
regardless of  
conduction angle  
Resistive,  
160 160 t2.3  
120 120 t2.3  
100 100 t2.3  
inductive loads  
60  
60  
Curves apply  
regardless of  
40  
40  
conduction angle.  
Resistive,  
20  
20  
inductive loads  
Natural convection  
0
0
0
5
10  
15  
20  
25  
30  
0
1
2
3
4
5
RMS On-State Current (A)  
RMS On-State Current (A)  
Repetitive Peak Off-State Current vs.  
Junction Temperature  
Holding Current vs.  
Junction Temperature  
106  
105  
104  
103  
102  
103  
102  
101  
Typical Example  
Typical Example  
–40  
0
40  
80  
120  
160  
–40  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Junction Temperature (°C)  
R07DS1151EJ0100 Rev.1.00  
Jan 29, 2014  
Page 4 of 7  
BCR20CM-12LB  
Preliminary  
Latching Current vs.  
Junction Temperature  
Breakover Voltage vs.  
Junction Temperature  
103  
102  
101  
160  
140  
120  
100  
80  
Typical Example  
Distribution  
, G  
+
T
2
Typical Example  
60  
40  
+
+
, G  
T
2
T
2
Typical Example  
, G  
20  
100  
–40  
0
0
40  
80  
120  
160  
–40  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Junction Temperature (°C)  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage (Tj=125°C)  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage (Tj=150°C)  
160  
160  
Typical Example  
Typical Example  
Tj = 125°C  
140  
120  
100  
80  
140  
120  
100  
80  
Tj = 150°C  
III Quadrant  
III Quadrant  
60  
60  
I Quadrant  
I Quadrant  
40  
40  
20  
20  
0
0
101  
102  
103  
104  
101  
102  
103  
104  
Rate of Rise of Off-State Voltage (V/μs)  
Rate of Rise of Off-State Voltage (V/μs)  
Commutation Characteristics (Tj=125°C)  
Commutation Characteristics (Tj=150°C)  
102  
102  
Time  
Time  
Main Voltage  
(dv/dt)c  
Main Current  
Typical Example  
Tj = 125°C  
Typical Example  
Tj = 150°C  
Main Voltage  
(dv/dt)c  
Main Current  
V
D
V
D
I = 4A  
T
I = 4A  
T
(di/dt)c  
Time  
(di/dt)c  
Time  
I
T
I
T
τ = 500μs  
τ = 500μs  
τ
τ
V = 200V  
D
V = 200V  
D
f = 3Hz  
f = 3Hz  
101  
100  
101  
I Quadrant  
Minimum  
III Quadrant  
Characteristics  
Value  
III Quadrant  
Minimum  
Characteristics  
Value  
I Quadrant  
101  
100  
3
30  
102  
3
101  
30  
102  
Rate of Decay of On-State  
Commutating Current (A/ms)  
Rate of Decay of On-State  
Commutating Current (A/ms)  
R07DS1151EJ0100 Rev.1.00  
Jan 29, 2014  
Page 5 of 7  
BCR20CM-12LB  
Preliminary  
Gate Trigger Current vs.  
Gate Current Pulse Width  
103  
Typical Example  
I
RGT I  
I
FGT I  
I
RGT III  
102  
101  
100  
101  
Gate Current Pulse Width (μs)  
102  
Gate Trigger Characteristics Test Circuits  
6Ω 6Ω  
Recommended Circuit Values Around The Triac  
Load  
C1  
R1  
A
A
6V  
6V  
C0 R0  
330Ω  
330Ω  
V
V
C = 0.1 to 0.47μF C = 0.1μF  
1
0
R = 47 to 100Ω  
R = 100Ω  
Test Procedure I  
Test Procedure II  
1
0
6Ω  
A
6V  
330Ω  
V
Test Procedure III  
R07DS1151EJ0100 Rev.1.00  
Jan 29, 2014  
Page 6 of 7  
BCR20CM-12LB  
Preliminary  
Package Dimensions  
Ordering Information  
Orderable Part Number  
BCR20CM-12LB#BB0  
Packing  
Quantity  
50 pcs. Straight type  
Remark  
Tube  
Tube  
Tube  
Tube  
BCR20CM-12LB-1#BB0  
BCR20CM-12LB#BB0  
BCR20CM12LB1#BB0  
50 pcs. Straight type, IGT item: 1  
50 pcs. : Lead forming type  
50 pcs. : Lead forming type, IGT item: 1  
Note : Please confirm the specification about the shipping in detail.  
R07DS1151EJ0100 Rev.1.00  
Jan 29, 2014  
Page 7 of 7  
Notice  
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Renesas Electronics Europe GmbH  
Arcadiastrasse 10, 40472 Düsseldorf, Germany  
Tel: +49-211-65030, Fax: +49-211-6503-1327  
Renesas Electronics (China) Co., Ltd.  
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China  
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679  
Renesas Electronics (Shanghai) Co., Ltd.  
Unit 301, Tower A, Central Towers, 555 LanGao Rd., Putuo District, Shanghai, China  
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999  
Renesas Electronics Hong Kong Limited  
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong  
Tel: +852-2886-9318, Fax: +852 2886-9022/9044  
Renesas Electronics Taiwan Co., Ltd.  
13F, No. 363, Fu Shing North Road, Taipei, Taiwan  
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670  
Renesas Electronics Singapore Pte. Ltd.  
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949  
Tel: +65-6213-0200, Fax: +65-6213-0300  
Renesas Electronics Malaysia Sdn.Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510  
Renesas Electronics Korea Co., Ltd.  
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea  
Tel: +82-2-558-3737, Fax: +82-2-558-5141  
© 2014 Renesas Electronics Corporation. All rights reserved.  
Colophon 3.0  
配单直通车
BCR20CM-12LB#BB0产品参数
型号:BCR20CM-12LB#BB0
Brand Name:Renesas
是否Rohs认证:符合
生命周期:Obsolete
IHS 制造商:RENESAS ELECTRONICS CORP
零件包装代码:TO-220AB
针数:4
制造商包装代码:PRSS0004AG-A4
Reach Compliance Code:compliant
风险等级:5.74
Is Samacsys:N
峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:TRIAC
Base Number Matches:1
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