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产品型号BCR5AS-8的Datasheet PDF文件预览

To all our customers  
Regarding the change of names mentioned in the document, such as Mitsubishi  
Electric and Mitsubishi XX, to Renesas Technology Corp.  
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi  
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names  
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.  
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been  
made to the contents of the document, and these changes do not constitute any alteration to the  
contents of the document itself.  
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices  
and power devices.  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
BCR5AS  
OUTLINE DRAWING  
in mm  
6.5  
5.0±0.2  
0.5±0.1  
4
TYPE  
NAME  
VOLTAGE  
CLASS  
1.0  
0.9 MAX  
0.5±0.2  
2.3 2.3  
0.8  
Measurement point of  
case temperature  
1
2
3
2 4  
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
4
• IT (RMS) ........................................................................ 5A  
• VDRM ....................................................................... 600V  
• IFGT !, IRGT !, IRGT # ............................................30mA  
GATE TERMINAL  
TERMINAL  
3
T
2
1
MP-3  
APPLICATION  
Hybrid IC, solid state relay, switching mode power supply, light dimmer,  
electric fan, electric blankets,  
control of household equipment such as washing machine,  
other general purpose control applications  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
12  
  1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
600  
720  
V
V
  1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
Unit  
A
 3  
IT (RMS)  
ITSM  
Commercial frequency, sine full wave 360° conduction, Tc=103°C  
5
60Hz sinewave 1 full cycle, peak value, non-repetitive  
50  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
10.4  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
3
0.3  
10  
2
W
W
V
Peak gate current  
A
Junction temperature  
Storage temperature  
Weight  
–40 ~ +125  
–40 ~ +125  
0.26  
°C  
°C  
g
Tstg  
Typical value  
 1. Gate open.  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
ELECTRICAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Parameter  
Test conditions  
Tj=125°C, VDRM applied  
Min.  
Typ.  
Max.  
2.0  
1.8  
1.5  
1.5  
1.5  
30  
mA  
V
IDRM  
Repetitive peak off-state current  
On-state voltage  
VTM  
Tc=25°C, ITM=7A, Instantaneous measurement  
!
@
#
!
@
#
V
VFGT !  
VRGT !  
VRGT #  
IFGT !  
IRGT !  
IRGT #  
VGD  
  2  
V
Gate trigger voltage  
Tj=25°C, VD=6V, RL=6, RG=330Ω  
V
mA  
mA  
mA  
V
  2  
30  
Gate trigger current  
Tj=25°C, VD=6V, RL=6, RG=330Ω  
Tj=125°C, VD=1/2VDRM  
30  
0.2  
Gate non-trigger voltage  
Thermal resistance  
 3  
3.0  
°C/W  
Rth (j-c)  
Junction to case  
 4  
Critical-rate of rise of off-state  
commutating voltage  
V/µs  
(dv/dt)c  
5
Tj=125°C  
 2. Measurement using the gate trigger characteristics measurement circuit.  
 3. Case temperature is measured on the T2 terminal.  
 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
Commutating voltage and current waveforms  
(inductive load)  
Test conditions  
SUPPLY  
VOLTAGE  
TIME  
1. Junction temperature  
Tj=125°C  
(di/dt)c  
MAIN CURRENT  
2. Rate of decay of on-state commutating current  
TIME  
TIME  
(di/dt)c=2.5A/ms  
MAIN  
VOLTAGE  
3. Peak off-state voltage  
VD=400V  
(dv/dt)c  
VD  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTICS  
RATED SURGE ON-STATE CURRENT  
102  
7
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
3
2
T
j = 125°C  
101  
7
5
3
2
T
j
= 25°C  
100  
7
5
3
2
101  
0.6  
1.4  
2.2  
3.0  
3.8  
4.6  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
GATE CHARACTERISTICS  
GATE TRIGGER CURRENT VS.  
JUNCTION TEMPERATURE  
103  
(Ι, ΙΙ AND ΙΙΙ)  
102  
7
TYPICAL EXAMPLE  
7
5
3
2
5
I
RGT III  
4
3
V
V
GM = 10V  
GT = 1.5V  
I
RGT I  
101  
7
5
3
2
2
P
GM = 3W  
GM = 2A  
P
GM =  
102  
7
0.3W  
I
I
FGT I  
100  
7
5
4
3
I
I
I
FGT I  
RGT I  
RGT III  
5
3
2
2
V
GD = 0.2V  
101  
101  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
604020 0 20 40 60 80 100120140  
GATE CURRENT (mA)  
JUNCTION TEMPERATURE (°C)  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(JUNCTION TO CASE)  
GATE TRIGGER VOLTAGE VS.  
JUNCTION TEMPERATURE  
103  
4.0  
TYPICAL EXAMPLE  
7
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
5
4
3
2
102  
7
5
4
3
2
101  
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
604020 0 20 40 60 80 100120140  
JUNCTION TEMPERATURE (°C)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
MAXIMUM ON-STATE POWER  
ALLOWABLE CASE TEMPERATURE  
VS. RMS ON-STATE CURRENT  
DISSIPATION  
8
160  
140  
120  
100  
80  
CURVES APPLY REGARDLESS  
OF CONDUCTION ANGLE  
7
6
5
4
3
2
1
0
360°  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
60  
40  
360° CONDUCTION  
RESISTIVE,  
INDUCTIVE LOADS  
20  
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
RMS ON-STATE CURRENT (A)  
RMS ON-STATE CURRENT (A)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
ALLOWABLE AMBIENT TEMPERATURE  
VS. RMS ON-STATE CURRENT  
ALLOWABLE AMBIENT TEMPERATURE  
VS. RMS ON-STATE CURRENT  
160  
160  
NATURAL CONVECTION  
NO FINS  
CURVES APPLY REGARDLESS  
OF CONDUCTION ANGLE  
ALL FINS ARE ALUMINUM  
140  
140  
170 170 t2.3  
120  
120  
100  
80  
60  
40  
20  
0
RESISTIVE, INDUCTIVE LOADS  
140 140 t2.3  
100  
80 80 t2.3  
80  
60  
NATURAL  
CONVECTION  
40  
20  
0
CURVES APPLY  
REGARDLESS OF  
CONDUCTION ANGLE  
RESISTIVE  
INDUCTIVE,  
LOADS  
0
1
2
3
4
5
6
7
8
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
RMS ON-STATE CURRENT (A)  
RMS ON-STATE CURRENT (A)  
REPETITIVE PEAK OFF-STATE  
CURRENT VS. JUNCTION  
TEMPERATURE  
HOLDING CURRENT VS.  
JUNCTION TEMPERATURE  
105  
7
102  
7
5
4
TYPICAL EXAMPLE  
V
D
= 12V  
DISTRIBUTION  
TYPICAL  
EXAMPLE  
5
3
2
3
104  
7
5
3
2
2
101  
7
103  
7
5
5
4
3
3
2
2
102  
100  
604020 0 20 40 60 80 100120140  
604020 0 20 40 60 80 100120140  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
LACHING CURRENT VS.  
JUNCTION TEMPERATURE  
BREAKOVER VOLTAGE VS.  
JUNCTION TEMPERATURE  
103  
160  
T+  
T–  
2
, G+ TYPICAL  
, GEXAMPLE  
7
5
TYPICAL EXAMPLE  
140  
120  
100  
80  
2
3
2
DISTRIBUTION  
T+, G–  
2
TYPICAL  
EXAMPLE  
102  
7
5
3
2
60  
101  
7
5
40  
3
2
20  
100  
0
604020 0 20 40 60 80 100120140  
604020 0 20 40 60 80 100120140  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
BREAKOVER VOLTAGE VS.  
RATE OF RISE OF  
OFF-STATE VOLTAGE  
COMMUTATION CHARACTERISTICS  
7
5
4
160  
SUPPLY  
VOLTAGE  
TYPICAL  
EXAMPLE  
Tj = 125°C  
IT = 4A  
τ = 500µs  
VD = 200V  
f = 3Hz  
TYPICAL EXAMPLE  
TIME  
(di/dt)c  
Tj = 125°C  
140  
MAIN CURRENT  
TIME  
3
MAIN  
VOLTAGE  
120  
TIME  
2
V
D
(dv/dt)c  
III QUADRANT  
100  
101  
7
5
4
80  
60  
I QUADRANT  
MINIMUM  
CHARAC-  
TERISTICS  
VALUE  
3
I QUADRANT  
40  
2
20  
100  
7
III QUADRANT  
3 4 5 7 101 3 4 5 7 102  
2
0
100  
2
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
RATE OF DECAY OF ON-STATE  
COMMUTATING CURRENT (A/ms)  
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS  
66Ω  
GATE TRIGGER CURRENT VS.  
GATE CURRENT PULSE WIDTH  
103  
TYPICAL EXAMPLE  
7
5
4
IRGT III  
A
A
6V  
6V  
3
IRGT I  
2
RG  
RG  
V
V
102  
IFGT I  
7
5
4
TEST PROCEDURE 1 TEST PROCEDURE 2  
6Ω  
3
2
A
6V  
RG  
V
101  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
TEST PROCEDURE 3  
GATE CURRENT PULSE WIDTH (µs)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
BCR5AS  
OUTLINE DRAWING  
in mm  
6.5  
5.0±0.2  
0.5±0.1  
4
TYPE  
NAME  
VOLTAGE  
CLASS  
1.0  
0.9 MAX  
0.5±0.2  
2.3 2.3  
0.8  
Measurement point of  
case temperature  
1
2
3
2 4  
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
4
IT (RMS) ........................................................................ 5A  
VDRM ....................................................................... 600V  
IFGT !, IRGT !, IRGT # ............................................30mA  
GATE TERMINAL  
TERMINAL  
3
T
2
1
MP-3  
APPLICATION  
Hybrid IC, solid state relay, switching mode power supply, light dimmer,  
electric fan, electric blankets,  
control of household equipment such as washing machine,  
other general purpose control applications  
(Warning)  
1. Refer to the recommended circuit values around the triac before using.  
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
12  
  1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
600  
720  
V
V
  1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
Unit  
A
 3  
IT (RMS)  
ITSM  
Commercial frequency, sine full wave 360° conduction, Tc=128°C  
5
60Hz sinewave 1 full cycle, peak value, non-repetitive  
50  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
10.4  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
3
W
W
V
0.3  
10  
Peak gate current  
2
A
Junction temperature  
Storage temperature  
Weight  
40 ~ +150  
40 ~ +150  
0.26  
°C  
°C  
g
Tstg  
Typical value  
 1. Gate open.  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
ELECTRICAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Parameter  
Test conditions  
Tj=150°C, VDRM applied  
Min.  
Typ.  
Max.  
2.0  
1.8  
1.5  
1.5  
1.5  
30  
mA  
V
IDRM  
Repetitive peak off-state current  
On-state voltage  
VTM  
Tc=25°C, ITM=7A, Instantaneous measurement  
!
@
#
!
@
#
V
VFGT !  
VRGT !  
VRGT #  
IFGT !  
IRGT !  
IRGT #  
VGD  
  2  
V
Gate trigger voltage  
Tj=25°C, VD=6V, RL=6, RG=330Ω  
V
mA  
mA  
mA  
V
  2  
30  
Gate trigger current  
Tj=25°C, VD=6V, RL=6, RG=330Ω  
Tj=125°C/150°C, VD=1/2VDRM  
30  
0.2/0.1  
Gate non-trigger voltage  
Thermal resistance  
 3  
3.0  
°C/W  
Rth (j-c)  
Junction to case  
 4  
Critical-rate of rise of off-state  
commutating voltage  
V/µs  
(dv/dt)c  
5/1  
Tj=125°/150°C  
 2. Measurement using the gate trigger characteristics measurement circuit.  
 3. Case temperature is measured on the T2 terminal.  
 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
Commutating voltage and current waveforms  
(inductive load)  
Test conditions  
SUPPLY  
VOLTAGE  
1. Junction temperature  
TIME  
Tj=125°C/150°C  
(di/dt)c  
MAIN CURRENT  
2. Rate of decay of on-state commutating current  
TIME  
TIME  
(di/dt)c=2.5A/ms  
MAIN  
VOLTAGE  
3. Peak off-state voltage  
VD=400V  
(dv/dt)c  
VD  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTICS  
RATED SURGE ON-STATE CURRENT  
102  
7
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
3
2
101  
7
5
Tj = 150°C  
3
2
100  
7
5
3
2
Tj = 25°C  
101  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
GATE CHARACTERISTICS  
GATE TRIGGER CURRENT VS.  
JUNCTION TEMPERATURE  
103  
7
5
(Ι, ΙΙ AND ΙΙΙ)  
5
3
2
TYPICAL EXAMPLE  
VGM = 10V  
VGT = 1.5V  
3
2
IRGT III  
101  
7
5
IRGT I  
PGM = 3W  
IGM = 2A  
102  
7
5
PGM =  
0.3W  
3
2
3
2
IFGT I  
100  
7
5
3
2
IFGT I  
IRGT I  
101  
7
5
3
2
IRGT III  
VGD = 0.1V  
101  
7
5
100  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
604020  
0 20 40 60 80 100120140160  
GATE CURRENT (mA)  
JUNCTION TEMPERATURE (°C)  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(JUNCTION TO CASE)  
GATE TRIGGER VOLTAGE VS.  
JUNCTION TEMPERATURE  
103  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
TYPICAL EXAMPLE  
7
5
4
3
2
102  
7
5
4
3
2
101  
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
604020  
0
20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
MAXIMUM ON-STATE POWER  
DISSIPATION  
ALLOWABLE CASE TEMPERATURE  
VS. RMS ON-STATE CURRENT  
8
7
6
5
4
3
2
1
0
160  
CURVES APPLY REGARDLESS  
OF CONDUCTION  
ANGLE  
140  
120  
100  
80  
360°  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
60  
360°  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
40  
20  
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
RMS ON-STATE CURRENT (A)  
RMS ON-STATE CURRENT (A)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
ALLOWABLE AMBIENT TEMPERATURE  
ALLOWABLE AMBIENT TEMPERATURE  
VS. RMS ON-STATE CURRENT  
VS. RMS ON-STATE CURRENT  
160  
140  
120  
100  
80  
160  
NATURAL CONVECTION  
ALL FINS ARE ALUMINUM  
NO FINS, CURVES  
APPLY REGARDLESS  
OF CONDUCTION ANGLE  
RESISTIVE, INDUCTIVE  
LOADS  
140  
120  
100  
80  
170 170 t2.3  
140 140 t2.3  
80 80 t2.3  
60  
60  
NATURAL  
CONVECTION  
40  
40  
RESISTIVE  
INDUCTIVE,  
LOADS  
CURVES APPLY  
REGARDLESS OF  
CONDUCTION ANGLE  
20  
20  
0
0
0
1
2
3
4
5
6
7
8
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
RMS ON-STATE CURRENT (A)  
RMS ON-STATE CURRENT (A)  
REPETITIVE PEAK OFF-STATE  
CURRENT VS. JUNCTION  
TEMPERATURE  
HOLDING CURRENT VS.  
JUNCTION TEMPERATURE  
106  
7
102  
7
5
4
TYPICAL EXAMPLE  
5
V
D
= 12V  
DISTRIBUTION  
TYPICAL  
3
2
105  
7
3
5
3
2
EXAMPLE  
2
104  
7
101  
7
5
4
5
3
2
103  
7
3
5
3
2
2
102  
100  
604020  
0
20 40 60 80 100120140160  
604020  
0
20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
LACHING CURRENT VS.  
JUNCTION TEMPERATURE  
BREAKOVER VOLTAGE VS.  
JUNCTION TEMPERATURE  
103  
7
160  
140  
120  
100  
80  
T+  
2
, G+ TYPICAL  
, GEXAMPLE  
TYPICAL EXAMPLE  
5
T–  
2
3
2
DISTRIBUTION  
T+, G–  
2
TYPICAL  
EXAMPLE  
102  
7
5
3
2
60  
101  
7
5
40  
3
2
20  
100  
0
604020  
0
20 40 60 80 100120140160  
604020  
0
20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
BREAKOVER VOLTAGE VS.  
BREAKOVER VOLTAGE VS.  
RATE OF RISE OF  
RATE OF RISE OF  
OFF-STATE VOLTAGE (Tj = 125°C)  
OFF-STATE VOLTAGE (Tj = 150°C)  
160  
140  
120  
100  
80  
160  
TYPICAL EXAMPLE  
TYPICAL EXAMPLE  
Tj = 125°C  
Tj = 150°C  
140  
120  
100  
80  
III QUADRANT  
III QUADRANT  
60  
60  
40  
40  
I QUADRANT  
I QUADRANT  
20  
20  
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
COMMUTATION CHARACTERISTICS  
COMMUTATION CHARACTERISTICS  
(Tj = 125°C)  
(Tj = 150°C)  
7
5
7
5
TYPICAL  
TYPICAL  
SUPPLY  
VOLTAGE  
SUPPLY  
VOLTAGE  
TIME  
(di/dt)c  
TIME  
(di/dt)c  
EXAMPLE  
Tj = 125°C  
IT = 4A  
τ = 500µs  
VD = 200V  
f = 3Hz  
EXAMPLE  
Tj = 150°C  
IT = 4A  
τ = 500µs  
VD = 200V  
f = 3Hz  
MAIN CURRENT  
MAIN CURRENT  
3
2
TIME  
3
2
TIME  
MAIN  
VOLTAGE  
MAIN  
VOLTAGE  
TIME  
TIME  
VD  
VD  
(dv/dt)c  
(dv/dt)c  
101  
101  
7
5
7
5
I QUADRANT  
I QUADRANT  
III QUADRANT  
MINIMUM  
CHARAC-  
TERISTICS  
VALUE  
3
2
3
2
MINIMUM  
CHARAC-  
TERISTICS  
VALUE  
100  
7
100  
7
III QUADRANT  
5 7 101  
100  
2
3
2
3
5 7 102  
100  
2
3
5 7 101  
2
3
5 7 102  
RATE OF DECAY OF ON-STATE  
COMMUTATING CURRENT (A/ms)  
RATE OF DECAY OF ON-STATE  
COMMUTATING CURRENT (A/ms)  
GATE TRIGGER CURRENT VS.  
GATE CURRENT PULSE WIDTH  
103  
7
5
4
TYPICAL EXAMPLE  
IRGT III  
3
IRGT I  
IFGT I  
2
102  
7
5
4
3
2
101  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
GATE CURRENT PULSE WIDTH (µs)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR5AS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS  
RECOMMENDED CIRCUIT VALUES  
AROUND THE TRIAC  
6Ω  
6Ω  
LOAD  
A
A
6V  
6V  
C1  
RG  
RG  
V
V
R1  
C0  
R0  
TEST PROCEDURE 1 TEST PROCEDURE 2  
6Ω  
C
R
1
1
= 0.1~0.47µF  
= 47~100Ω  
C
R
0
0
= 0.1µF  
= 100Ω  
A
6V  
RG  
V
TEST PROCEDURE 3  
Mar. 2002  
配单直通车
BCR5AS-8产品参数
型号:BCR5AS-8
生命周期:Obsolete
IHS 制造商:MITSUBISHI ELECTRIC CORP
包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknown
HTS代码:8541.30.00.80
风险等级:5.84
Is Samacsys:N
外壳连接:MAIN TERMINAL 2
配置:SINGLE
最大直流栅极触发电流:30 mA
最大直流栅极触发电压:1.5 V
JESD-30 代码:R-PSSO-G2
最大漏电流:2 mA
元件数量:1
端子数量:2
最高工作温度:125 °C
最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
认证状态:Not Qualified
最大均方根通态电流:5 A
断态重复峰值电压:400 V
子类别:TRIACs
表面贴装:YES
端子形式:GULL WING
端子位置:SINGLE
触发设备类型:TRIAC
Base Number Matches:1
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