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产品型号BCR5KM-12LA-A8的Datasheet PDF文件预览

BCR5KM-12LA  
Triac  
Medium Power Use  
REJ03G0316-0100  
Rev.1.00  
Aug.20.2004  
Features  
IT (RMS) : 5 A  
Insulated Type  
Planar Passivation Type  
UL Recognized : Yellow Card No. E223904  
File No. E80271  
VDRM : 600 V  
I
FGTI , IRGTI, IRGT : 20 mA (10 mA)Note5  
Viso : 2000 V  
Outline  
TO-220FN  
2
1. T Terminal  
1
2. T Terminal  
2
3. Gate Terminal  
3
1
1
2
3
Applications  
Switching mode power supply, small motor control, heater control, solenoid driver, and other general purpose control  
applications  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
12  
Repetitive peak off-state voltageNote1  
Non-repetitive peak off-state voltageNote1  
VDRM  
VDSM  
600  
720  
V
V
Rev.1.00, Aug.20.2004, page 1 of 7  
BCR5KM-12LA  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
Surge on-state current  
I2t for fusing  
IT (RMS)  
5
A
Commercial frequency, sine full wave  
360° conduction, Tc = 96°C  
ITSM  
I2t  
50  
A
60Hz sinewave 1 full cycle, peak value,  
non-repetitive  
10.4  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
3
W
W
V
0.3  
10  
2
Peak gate current  
A
Junction temperature  
Storage temperature  
Mass  
Tj  
– 40 to +125  
– 40 to +125  
2.0  
°C  
°C  
g
Tstg  
Typical value  
Isolation voltage  
Viso  
2000  
V
Ta = 25°C, AC 1 minute,  
T1·T2·G terminal to case  
Notes: 1. Gate open.  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
Typ.  
Max.  
2.0  
Unit  
mA  
V
Test conditions  
Tj = 125°C, VDRM applied  
VTM  
1.8  
Tc = 25°C, ITM = 7 A,  
Instantaneous measurement  
Gate trigger voltageNote2  
Ι
ΙΙ  
ΙΙΙ  
Ι
VFGT  
0.2  
5
1.5  
1.5  
V
V
Tj = 25°C, VD = 6 V, RL = 6 ,  
RG = 330 Ω  
Ι
VRGT  
Ι
VRGT  
1.5  
V
ΙΙΙ  
Gate trigger currentNote2  
IFGT  
20Note5  
20Note5  
20Note5  
mA  
mA  
mA  
V
Tj = 25°C, VD = 6 V, RL = 6 ,  
RG = 330 Ω  
Ι
ΙΙ  
ΙΙΙ  
IRGT  
Ι
IRGT  
ΙΙΙ  
Gate non-trigger voltage  
Thermal resistance  
VGD  
Tj = 125°C, VD = 1/2 VDRM  
Junction to caseNote3  
Tj = 125°C  
Rth (j-c)  
(dv/dt)c  
3.8  
°C/W  
V/µs  
Critical-rate of rise of off-state  
commutating voltageNote4  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.  
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
5. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)  
Commutating voltage and current waveforms  
Test conditions  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125°C  
(di/dt)c  
2. Rate of decay of on-state commutating current  
(di/dt)c = – 2.5 A/ms  
Time  
Time  
Main Current  
Main Voltage  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
Rev.1.00, Aug.20.2004, page 2 of 7  
BCR5KM-12LA  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
102  
7
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
3
2
101  
7
5
Tj = 125°C  
3
2
100  
7
5
Tj = 25°C  
3
2
10–1  
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6  
100  
2
3
5 7 101  
2
3
5 7 102  
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics (I, II and III)  
102  
7
5
103  
7
Typical Example  
5
3
2
101  
7
5
I
RGT III  
V
= 10V  
GM  
3
2
I
RGT I  
P
= 3W  
GM  
P
=
G(AV)  
0.3W  
102  
7
3
2
I
= 2A  
GM  
V
= 1.5V  
GT  
I
FGT I  
100  
7
5
I
= 20mA  
GT  
3
2
5
3
2
V
= 0.2V  
GD  
10–1  
101  
–60 –40–20  
101 2 3 5 7102 2 3 5 7103 2 3 5 7104  
0
20 40 60 80 100 120 140  
Gate Current (mA)  
Junction Temperature (°C)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to case)  
102 2 3 5 7103 2 3  
5
103  
4.0  
Typical Example  
7
5
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
3
2
102  
7
5
3
2
101  
–60 –40–20  
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102  
0
20 40 60 80 100 120 140  
Junction Temperature (°C)  
Conduction Time (Cycles at 60Hz)  
Rev.1.00, Aug.20.2004, page 3 of 7  
BCR5KM-12LA  
Maximum Transient Thermal Impedance  
Characteristics (Junction to ambient)  
Maximum On-State Power Dissipation  
10  
103  
7
No Fins  
5
9
8
7
6
5
4
3
2
1
0
3
2
102  
7
5
3
2
101  
7
5
3
2
100  
7
360° Conduction  
Resistive,  
inductive loads  
5
3
2
10–1  
101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105  
0
1
2
3
4
5
6
7
8
9 10  
Conduction Time (Cycles at 60Hz)  
RMS On-State Current (A)  
Allowable Case Temperature vs.  
RMS On-State Current  
Allowable Ambient Temperature vs.  
RMS On-State Current  
160  
160  
140  
120  
100  
80  
All fins are black painted  
aluminum and greased  
Curves apply regardless  
of conduction angle  
140  
120  
100  
80  
120 × 120 × t2.3  
100 × 100 × t2.3  
60 × 60 × t2.3  
60  
60  
Curves apply  
regardless of  
40  
40  
conduction angle  
Resistive,  
inductive loads  
Natural convection  
360° Conduction  
Resistive,  
inductive loads  
20  
20  
0
0
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
RMS On-State Current (A)  
RMS On-State Current (A)  
Allowable Ambient Temperature vs.  
RMS On-State Current  
Repetitive Peak Off-State Current vs.  
Junction Temperature  
160  
140  
120  
100  
80  
105  
7
Natural convection  
No Fins  
Curves apply regardless  
of conduction angle  
Resistive, inductive loads  
Typical Example  
5
3
2
104  
7
5
3
2
60  
103  
7
5
40  
3
2
20  
0
0
102  
0.5 1.0 1.5 2.0 2.5 3.0  
RMS On-State Current (A)  
–60 –40–20  
0
20 40 60 80 100 120 140  
Junction Temperature (°C)  
Rev.1.00, Aug.20.2004, page 4 of 7  
BCR5KM-12LA  
Holding Current vs.  
Junction Temperature  
Latching Current vs.  
Junction Temperature  
102  
7
103  
7
+
+
V
D
= 12V  
T
T
, G  
, G  
2
Typical Example  
5
2
5
Distribution  
3
2
102  
7
5
Distribution  
3
2
, G  
Typical Example  
+
T
2
Typical Example  
101  
7
3
2
101  
7
5
3
2
5
3
2
100  
100  
–60 –40–20 0 20 40 60 80 100 120 140  
–60 –40–20 0 20 40 60 80 100 120 140  
Junction Temperature (°C)  
Junction Temperature (°C)  
Breakover Voltage vs.  
Junction Temperature  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
160  
160  
Typical Example  
Tj = 125°C  
Typical Example  
140  
120  
100  
80  
140  
120  
100  
80  
III Quadrant  
60  
60  
40  
40  
I Quadrant  
20  
20  
0
0
–60 –40–20 0 20 40 60 80 100 120 140  
101  
2
3
5 7102  
2
3
5 7103  
2
3
5 7104  
Junction Temperature (°C)  
Rate of Rise of Off-State Voltage (V/µs)  
Gate Trigger Current vs.  
Gate Current Pulse Width  
Commutation Characteristics  
7
5
103  
Time  
Typical Example  
Tj = 125°C  
Main Voltage  
Typical Example  
7
5
(dv/dt)c  
V
D
I
RGT III  
Main Current  
I = 4A  
T
τ = 500µs  
3
2
(di/dt)c  
Time  
I
T
τ
3
2
I
V = 200V  
D
f = 3Hz  
RGT I  
101  
7
5
102  
7
I Quadrant  
I
FGT I  
5
3
2
Minimum  
Characteristics  
Value  
3
2
100  
7
III Quadrant  
101  
100  
2
3
5 7 101  
2
3
5 7 102  
100  
2
3
5 7 101  
2
3
5 7 102  
Rate of Decay of On-State  
Commutating Current (A/ms)  
Gate Current Pulse Width (µs)  
Rev.1.00, Aug.20.2004, page 5 of 7  
BCR5KM-12LA  
Gate Trigger Characteristics Test Circuits  
66Ω  
A
A
6V  
6V  
330Ω  
330Ω  
V
V
Test Procedure I  
Test Procedure II  
6Ω  
A
6V  
330Ω  
V
Test Procedure III  
Rev.1.00, Aug.20.2004, page 6 of 7  
BCR5KM-12LA  
Package Dimensions  
TO-220FN  
EIAJ Package Code  
Mass (g) (reference value)  
2.0  
Lead Material  
Cu alloy  
JEDEC Code  
2.8 0.2  
10 0.3  
φ 3.2 0.2  
1.1 0.2  
1.1 0.2  
0.75 0.15  
2.54 0.25  
0.75 0.15  
2.54 0.25  
Dimension in Millimeters  
Min Typ Max  
Symbol  
A
A
A
b
1
2
D
E
e
x
Note 1) The dimensional figures indicate representative values unless  
otherwise the tolerance is specified.  
y
y1  
ZD  
ZE  
Order Code  
Standard order  
code example  
Lead form  
Standard packing  
Quantity  
Standard order code  
Straight type  
Lead form  
Plastic Magazine (Tube)  
Plastic Magazine (Tube)  
50 Type name  
50 Type name – Lead forming code  
BCR5KM-12LA  
BCR5KM-12LA-A8  
Note : Please confirm the specification about the shipping in detail.  
Rev.1.00, Aug.20.2004, page 7 of 7  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
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diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
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