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    • BD543A-S图

    • 北京元坤伟业科技有限公司

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    • BD543A-S
    • 数量5000 
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    • 批号2024+ 
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    • BD543A-S图

    • 北京元坤伟业科技有限公司

       该会员已使用本站17年以上
    • BD543A-S
    • 数量5000 
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    产品型号BD543A-S的Datasheet PDF文件预览

    BD543, BD543A, BD543B, BD543C  
    NPN SILICON POWER TRANSISTORS  
    ●
    Designed for Complementary Use with the  
    BD544 Series  
    TO-220 PACKAGE  
    (TOP VIEW)  
    ●
    ●
    ●
    ●
    70 W at 25°C Case Temperature  
    8 A Continuous Collector Current  
    10 A Peak Collector Current  
    1
    2
    3
    B
    C
    E
    Customer-Specified Selections Available  
    Pin 2 is in electrical contact with the mounting base.  
    MDTRACA  
    absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
    RATING  
    SYMBOL  
    VALUE  
    UNIT  
    BD543  
    40  
    BD543A  
    BD543B  
    BD543C  
    BD543  
    60  
    Collector-base voltage (IE = 0)  
    Collector-emitter voltage (IB = 0)  
    VCBO  
    V
    80  
    100  
    40  
    BD543A  
    BD543B  
    BD543C  
    60  
    VCEO  
    V
    80  
    100  
    Emitter-base voltage  
    VEBO  
    IC  
    5
    V
    A
    Continuous collector current  
    Peak collector current (see Note 1)  
    8
    ICM  
    Ptot  
    Ptot  
    TA  
    10  
    70  
    A
    Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
    Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
    Operating free air temperature range  
    W
    W
    °C  
    °C  
    °C  
    °C  
    2
    -65 to +150  
    -65 to +150  
    -65 to +150  
    260  
    Operating junction temperature range  
    Tj  
    Storage temperature range  
    Tstg  
    TL  
    Lead temperature 3.2 mm from case for 10 seconds  
    NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.  
    2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.  
    3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
    JUNE 1973 - REVISED SEPTEMBER 2002  
    Specifications are subject to change without notice.  
    1
    BD543, BD543A, BD543B, BD543C  
    NPN SILICON POWER TRANSISTORS  
    electrical characteristics at 25°C case temperature  
    PARAMETER  
    TEST CONDITIONS  
    MIN  
    TYP  
    MAX  
    UNIT  
    BD543  
    40  
    60  
    Collector-emitter  
    BD543A  
    BD543B  
    BD543C  
    BD543  
    V(BR)CEO  
    IC  
    =
    30 mA  
    IB = 0  
    V
    breakdown voltage  
    80  
    (see Note 4)  
    100  
    VCE  
    VCE  
    VCE  
    =
    =
    =
    40 V  
    60 V  
    80 V  
    V
    BE = 0  
    0.4  
    0.4  
    0.4  
    0.4  
    0.7  
    0.7  
    Collector-emitter  
    cut-off current  
    VBE = 0  
    VBE = 0  
    VBE = 0  
    BD543A  
    BD543B  
    BD543C  
    BD543/543A  
    BD543B/543C  
    ICES  
    mA  
    VCE = 100 V  
    Collector cut-off  
    current  
    VCE  
    VCE  
    =
    =
    30 V  
    60 V  
    IB = 0  
    ICEO  
    IEBO  
    mA  
    mA  
    IB = 0  
    Emitter cut-off  
    current  
    VEB  
    =
    5 V  
    IC = 0  
    1
    VCE  
    VCE  
    VCE  
    =
    =
    =
    4 V  
    4 V  
    IC  
    IC  
    IC  
    IC  
    IC  
    IC  
    =
    =
    =
    =
    =
    =
    1 A  
    3 A  
    5 A  
    3A  
    60  
    40  
    15  
    Forward current  
    transfer ratio  
    hFE  
    (see Notes 4 and 5)  
    (see Notes 4 and 5)  
    4 V  
    IB  
    IB  
    IB  
    =
    =
    =
    0.3 A  
    1 A  
    0.5  
    0.5  
    1
    Collector-emitter  
    saturation voltage  
    VCE(sat)  
    5A  
    V
    V
    1.6 A  
    8A  
    Base-emitter  
    VBE  
    hfe  
    VCE  
    VCE  
    VCE  
    =
    =
    =
    4 V  
    10 V  
    10 V  
    IC  
    =
    5 A  
    (see Notes 4 and 5)  
    f = 1 kHz  
    1.4  
    voltage  
    Small signal forward  
    current transfer ratio  
    Small signal forward  
    current transfer ratio  
    IC = 0.5 A  
    IC = 0.5 A  
    20  
    3
    |hfe|  
    f = 1 MHz  
    NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.  
    5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.  
    thermal characteristics  
    PARAMETER  
    Junction to case thermal resistance  
    Junction to free air thermal resistance  
    MIN  
    MIN  
    TYP  
    MAX  
    UNIT  
    RθJC  
    RθJA  
    1.79  
    62.5  
    °C/W  
    °C/W  
    resistive-load-switching characteristics at 25°C case temperature  
    †
    PARAMETER  
    TEST CONDITIONS  
    B(on) = 0.6 A  
    RL = 5 Ω  
    TYP  
    MAX  
    UNIT  
    ton  
    toff  
    Turn-on time  
    Turn-off time  
    IC = 6 A  
    I
    I
    B(off) = -0.6 A  
    0.6  
    1
    µs  
    µs  
    VBE(off) = -4 V  
    tp = 20 µs, dc ≤ 2%  
    †
    Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.  
    JUNE 1973 - REVISED SEPTEMBER 2002  
    Specifications are subject to change without notice.  
    2
    BD543, BD543A, BD543B, BD543C  
    NPN SILICON POWER TRANSISTORS  
    TYPICAL CHARACTERISTICS  
    TYPICAL DC CURRENT GAIN  
    vs  
    COLLECTOR-EMITTER SATURATION VOLTAGE  
    vs  
    COLLECTOR CURRENT  
    BASE CURRENT  
    TCS633AE  
    TCS633AI  
    1000  
    100  
    10  
    10  
    VCE = 4 V  
    IC = 300 mA  
    IC = 1 A  
    IC = 3 A  
    IC = 6 A  
    TC = 25°C  
    tp = 300 µs, duty cycle < 2%  
    1·0  
    0·1  
    1·0  
    0·1  
    0·01  
    0·001  
    1·0  
    10  
    0·01  
    0·1  
    1·0  
    10  
    IC - Collector Current - A  
    IB - Base Current - A  
    Figure 1.  
    Figure 2.  
    BASE-EMITTER VOLTAGE  
    vs  
    COLLECTOR CURRENT  
    TCS633AF  
    1·2  
    VCE = 4 V  
    TC = 25°C  
    1·1  
    1·0  
    0·9  
    0·8  
    0·7  
    0·6  
    0·1  
    1·0  
    10  
    IC - Collector Current - A  
    Figure 3.  
    JUNE 1973 - REVISED SEPTEMBER 2002  
    Specifications are subject to change without notice.  
    3
    BD543, BD543A, BD543B, BD543C  
    NPN SILICON POWER TRANSISTORS  
    MAXIMUM SAFE OPERATING REGIONS  
    MAXIMUM FORWARD-BIAS  
    SAFE OPERATING AREA  
    SAS633AF  
    10  
    1·0  
    0·1  
    BD543  
    BD543A  
    BD543B  
    BD543C  
    0·01  
    1·0  
    10  
    100  
    1000  
    VCE - Collector-Emitter Voltage - V  
    Figure 4.  
    THERMAL INFORMATION  
    MAXIMUM POWER DISSIPATION  
    vs  
    CASE TEMPERATURE  
    TIS633AD  
    80  
    70  
    60  
    50  
    40  
    30  
    20  
    10  
    0
    0
    25  
    50  
    75  
    100  
    125  
    150  
    TC - Case Temperature - °C  
    Figure 5.  
    JUNE 1973 - REVISED SEPTEMBER 2002  
    Specifications are subject to change without notice.  
    4
    BD543, BD543A, BD543B, BD543C  
    NPN SILICON POWER TRANSISTORS  
    MECHANICAL DATA  
    TO-220  
    3-pin plastic flange-mount package  
    This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic  
    compound. The compound will withstand soldering temperature with no deformation, and circuit performance  
    characteristics will remain stable when operated in high humidity conditions. Leads require no additional  
    cleaning or processing when used in soldered assembly.  
    TO220  
    4,70  
    4,20  
    10,4  
    10,0  
    1,32  
    1,23  
    3,96  
    3,71  
    ø
    2,95  
    2,54  
    see Note B  
    6,6  
    6,0  
    15,90  
    14,55  
    see Note C  
    6,1  
    3,5  
    14,1  
    12,7  
    1,70  
    1,07  
    0,97  
    0,61  
    1
    2
    3
    2,74  
    2,34  
    0,64  
    0,41  
    2,90  
    2,40  
    5,28  
    4,88  
    VERSION 1  
    VERSION 2  
    ALL LINEAR DIMENSIONS IN MILLIMETERS  
    NOTES: A. The centre pin is in electrical contact with the mounting tab.  
    B. Mounting tab corner profile according to package version.  
    C. Typical fixing hole centre stand off height according to package version.  
    Version 1, 18.0 mm. Version 2, 17.6 mm.  
    MDXXBE  
    JUNE 1973 - REVISED SEPTEMBER 2002  
    Specifications are subject to change without notice.  
    5
    配单直通车
    BD543A-S产品参数
    型号:BD543A-S
    是否无铅： 不含铅
    是否Rohs认证： 符合
    生命周期：Obsolete
    IHS 制造商：BOURNS INC
    零件包装代码：TO-220AB
    包装说明：PLASTIC, TO-220, FM-3
    针数：3
    Reach Compliance Code：not_compliant
    ECCN代码：EAR99
    HTS代码：8541.29.00.95
    风险等级：5.71
    外壳连接：COLLECTOR
    最大集电极电流 (IC)：8 A
    集电极-发射极最大电压：60 V
    配置：SINGLE
    最小直流电流增益 (hFE)：15
    JEDEC-95代码：TO-220AB
    JESD-30 代码：R-PSFM-T3
    JESD-609代码：e1
    元件数量：1
    端子数量：3
    最高工作温度：150 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：FLANGE MOUNT
    峰值回流温度（摄氏度）：NOT SPECIFIED
    极性/信道类型：NPN
    最大功率耗散 (Abs)：70 W
    认证状态：Not Qualified
    子类别：Other Transistors
    表面贴装：NO
    端子面层：TIN SILVER COPPER
    端子形式：THROUGH-HOLE
    端子位置：SINGLE
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    Base Number Matches：1
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