BD545A芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

BD545, BD545A, BD545B, BD545C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD546 Series

SOT-93 PACKAGE

(TOP VIEW)

●

85 W at 25°C Case Temperature

B

C

E

1

2

3

15 A Continuous Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD545

40

BD545A

BD545B

BD545C

BD545

60

Collector-base voltage (I_E= 0)

V_CBO

V

80

100

40

BD545A

BD545B

BD545C

60

Collector-emitter voltage (I_B= 0) (see Note 1)

V_CEO

V

80

100

Emitter-base voltage

V_EBO

I_C

5

15

V

Continuous collector current

A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Operating free air temperature range

P_tot

T_A

85

W

°C

3.5

-65 to +150

260

Operating junction temperature range

T_j

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

1

BD545, BD545A, BD545B, BD545C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

BD545

40

60

Collector-emitter

BD545A

BD545B

BD545C

BD545

V_(BR)CEO

I_C

=

30 mA

I_B= 0

V

breakdown voltage

80

(see Note 4)

100

V_CE

=

40 V

60 V

80 V

V

_BE= 0

0.4

0.7

Collector-emitter

cut-off current

V_BE= 0

BD545A

BD545B

BD545C

BD545/545A

BD545B/545C

I_CES

mA

V_CE= 100 V

Collector cut-off

current

V_CE

=

30 V

60 V

I_B= 0

I_CEO

I_EBO

mA

I_B= 0

Emitter cut-off

current

V_EB

=

5 V

I_C= 0

1

V_CE

=

4 V

I_C

=

1 A

5 A

60

25

10

Forward current

transfer ratio

h_FE

(see Notes 4 and 5)

I_C= 10 A

I_C5 A

Collector-emitter

saturation voltage

Base-emitter

I_B= 625 mA

=

0.8

1

V_CE(sat)

V_BE

(see Notes 4 and 5)

f = 1 kHz

V

I_B

=

2 A

I_C= 10 A

V_CE

=

4 V

I_C= 10 A

1.8

voltage

Small signal forward

current transfer ratio

Small signal forward

current transfer ratio

h_fe

10 V

I_C= 0.5 A

20

3

|h_fe|

f = 1 MHz

NOTES: 4. These parameters must be measured using pulse techniques, t_p= 300 µs, duty cycle £ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN

TYP

MAX

UNIT

R_qJC

R_qJA

1.47

35.7

°C/W

resistive-load-switching characteristics at 25°C case temperature

†

PARAMETER

TEST CONDITIONS

_B(on)= 0.6 A

R_L= 5 W

TYP

MAX

UNIT

t_on

t_off

Turn-on time

Turn-off time

I_C= 6 A

I

I_B(off)= -0.6 A

0.6

1

µs

V_BE(off)= -4 V

t_p= 20 µs, dc £ 2%

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

P R O D U C T

I N F O R M A T I O N

2

BD545, BD545A, BD545B, BD545C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

BASE CURRENT

TCS633AJ

TCS633AB

1000

100

10

V_CE= 4 V

I_C= 1 A

T_C= 25°C

I_C= 3 A

I_C= 6 A

I_C= 10 A

t_p= 300 µs, duty cycle < 2%

1·0

0·1

1·0

0·1

0·01

1·0

10

0·01

0·1

1·0

10

I_C- Collector Current - A

I_B- Base Current - A

Figure 1.

Figure 2.

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

TCS633AC

1·8

V_CE= 4 V

T_C= 25°C

1·6

1·4

1·2

1·0

0·8

0·6

0·1

1

10

I_C- Collector Current - A

Figure 3.

P R O D U C T

I N F O R M A T I O N

3

BD545, BD545A, BD545B, BD545C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

SAS633AE

100

10

1·0

0·1

0·01

BD545

BD545A

BD545B

BD545C

1·0

10

100

1000

V_CE- Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs

CASE TEMPERATURE

TIS633AC

100

80

60

40

20

0

25

50

75

100

125

150

T_C- Case Temperature - °C

Figure 5.

P R O D U C T

I N F O R M A T I O N

4

BD545, BD545A, BD545B, BD545C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

MECHANICAL DATA

SOT-93

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

SOT-93

4,90

4,70

1,37

1,17

15,2

14,7

4,1

4,0

ø

3,95

4,15

16,2 MAX.

12,2 MAX.

31,0 TYP.

18,0 TYP.

1

2

3

1,30

1,10

0,78

0,50

11,1

10,8

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXAW

NOTE A: The centre pin is in electrical contact with the mounting tab.

P R O D U C T

I N F O R M A T I O N

5

BD545, BD545A, BD545B, BD545C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,

machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

P R O D U C T

I N F O R M A T I O N

6

型号:	BD545A
生命周期：	Transferred
包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.64
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	15 A
集电极-发射极最大电压：	60 V
配置：	SINGLE
最小直流电流增益 (hFE)：	10
JESD-30 代码：	R-PSFM-T3
元件数量：	1
端子数量：	3
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	NPN
认证状态：	Not Qualified
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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