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产品型号BD545B的Datasheet PDF文件预览

BD545, BD545A, BD545B, BD545C  
NPN SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
JUNE 1973 - REVISED MARCH 1997  
Designed for Complementary Use with the  
BD546 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
85 W at 25°C Case Temperature  
B
C
E
1
2
3
15 A Continuous Collector Current  
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD545  
40  
BD545A  
BD545B  
BD545C  
BD545  
60  
Collector-base voltage (IE = 0)  
VCBO  
V
80  
100  
40  
BD545A  
BD545B  
BD545C  
60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
5
15  
V
Continuous collector current  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Operating free air temperature range  
Ptot  
Ptot  
TA  
85  
W
W
°C  
°C  
°C  
°C  
3.5  
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Tj  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
BD545, BD545A, BD545B, BD545C  
NPN SILICON POWER TRANSISTORS  
JUNE 1973 - REVISED MARCH 1997  
electrical characteristics at 25°C case temperature  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
BD545  
40  
60  
Collector-emitter  
BD545A  
BD545B  
BD545C  
BD545  
V(BR)CEO  
IC  
=
30 mA  
IB = 0  
V
breakdown voltage  
80  
(see Note 4)  
100  
VCE  
VCE  
VCE  
=
=
=
40 V  
60 V  
80 V  
V
BE = 0  
0.4  
0.4  
0.4  
0.4  
0.7  
0.7  
Collector-emitter  
cut-off current  
VBE = 0  
VBE = 0  
VBE = 0  
BD545A  
BD545B  
BD545C  
BD545/545A  
BD545B/545C  
ICES  
mA  
VCE = 100 V  
Collector cut-off  
current  
VCE  
VCE  
=
=
30 V  
60 V  
IB = 0  
ICEO  
IEBO  
mA  
mA  
IB = 0  
Emitter cut-off  
current  
VEB  
=
5 V  
IC = 0  
1
VCE  
VCE  
VCE  
=
=
=
4 V  
4 V  
4 V  
IC  
IC  
=
=
1 A  
5 A  
60  
25  
10  
Forward current  
transfer ratio  
hFE  
(see Notes 4 and 5)  
IC = 10 A  
IC 5 A  
Collector-emitter  
saturation voltage  
Base-emitter  
IB = 625 mA  
=
0.8  
1
VCE(sat)  
VBE  
(see Notes 4 and 5)  
(see Notes 4 and 5)  
f = 1 kHz  
V
V
IB  
=
2 A  
IC = 10 A  
VCE  
VCE  
VCE  
=
=
=
4 V  
IC = 10 A  
1.8  
voltage  
Small signal forward  
current transfer ratio  
Small signal forward  
current transfer ratio  
hfe  
10 V  
10 V  
IC = 0.5 A  
IC = 0.5 A  
20  
3
|hfe|  
f = 1 MHz  
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.  
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.  
thermal characteristics  
PARAMETER  
Junction to case thermal resistance  
Junction to free air thermal resistance  
MIN  
MIN  
TYP  
MAX  
UNIT  
RqJC  
RqJA  
1.47  
35.7  
°C/W  
°C/W  
resistive-load-switching characteristics at 25°C case temperature  
PARAMETER  
TEST CONDITIONS  
B(on) = 0.6 A  
RL = 5 W  
TYP  
MAX  
UNIT  
ton  
toff  
Turn-on time  
Turn-off time  
IC = 6 A  
I
IB(off) = -0.6 A  
0.6  
1
µs  
µs  
VBE(off) = -4 V  
tp = 20 µs, dc £ 2%  
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.  
P R O D U C T  
I N F O R M A T I O N  
2
BD545, BD545A, BD545B, BD545C  
NPN SILICON POWER TRANSISTORS  
JUNE 1973 - REVISED MARCH 1997  
TYPICAL CHARACTERISTICS  
TYPICAL DC CURRENT GAIN  
vs  
COLLECTOR-EMITTER SATURATION VOLTAGE  
vs  
COLLECTOR CURRENT  
BASE CURRENT  
TCS633AJ  
TCS633AB  
1000  
100  
10  
10  
VCE = 4 V  
IC = 1 A  
TC = 25°C  
IC = 3 A  
IC = 6 A  
IC = 10 A  
tp = 300 µs, duty cycle < 2%  
1·0  
0·1  
1·0  
0·1  
0·01  
1·0  
10  
0·01  
0·1  
1·0  
10  
IC - Collector Current - A  
IB - Base Current - A  
Figure 1.  
Figure 2.  
BASE-EMITTER VOLTAGE  
vs  
COLLECTOR CURRENT  
TCS633AC  
1·8  
VCE = 4 V  
TC = 25°C  
1·6  
1·4  
1·2  
1·0  
0·8  
0·6  
0·1  
1
10  
IC - Collector Current - A  
Figure 3.  
P R O D U C T  
I N F O R M A T I O N  
3
BD545, BD545A, BD545B, BD545C  
NPN SILICON POWER TRANSISTORS  
JUNE 1973 - REVISED MARCH 1997  
MAXIMUM SAFE OPERATING REGIONS  
MAXIMUM FORWARD-BIAS  
SAFE OPERATING AREA  
SAS633AE  
100  
10  
1·0  
0·1  
0·01  
BD545  
BD545A  
BD545B  
BD545C  
1·0  
10  
100  
1000  
VCE - Collector-Emitter Voltage - V  
Figure 4.  
THERMAL INFORMATION  
MAXIMUM POWER DISSIPATION  
vs  
CASE TEMPERATURE  
TIS633AC  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
TC - Case Temperature - °C  
Figure 5.  
P R O D U C T  
I N F O R M A T I O N  
4
BD545, BD545A, BD545B, BD545C  
NPN SILICON POWER TRANSISTORS  
JUNE 1973 - REVISED MARCH 1997  
MECHANICAL DATA  
SOT-93  
3-pin plastic flange-mount package  
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic  
compound. The compound will withstand soldering temperature with no deformation, and circuit performance  
characteristics will remain stable when operated in high humidity conditions. Leads require no additional  
cleaning or processing when used in soldered assembly.  
SOT-93  
4,90  
4,70  
1,37  
1,17  
15,2  
14,7  
4,1  
4,0  
ø
3,95  
4,15  
16,2 MAX.  
12,2 MAX.  
31,0 TYP.  
18,0 TYP.  
1
2
3
1,30  
1,10  
0,78  
0,50  
11,1  
10,8  
2,50 TYP.  
ALL LINEAR DIMENSIONS IN MILLIMETERS  
MDXXAW  
NOTE A: The centre pin is in electrical contact with the mounting tab.  
P R O D U C T  
I N F O R M A T I O N  
5
BD545, BD545A, BD545B, BD545C  
NPN SILICON POWER TRANSISTORS  
JUNE 1973 - REVISED MARCH 1997  
IMPORTANT NOTICE  
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any  
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the  
information being relied on is current.  
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI  
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except as mandated by government requirements.  
PI accepts no liability for applications assistance, customer product design, software performance, or infringement  
of patents or services described herein. Nor is any license, either express or implied, granted under any patent  
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,  
machine, or process in which such semiconductor products or services might be or are used.  
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE  
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.  
Copyright © 1997, Power Innovations Limited  
P R O D U C T  
I N F O R M A T I O N  
6
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