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  • BD679A-S TO-126图
  • 深圳市一线半导体有限公司

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产品型号BD679AG的Datasheet PDF文件预览

BD6xxx  
Complementary power Darlington transistors  
.
Features  
Good h linearity  
FE  
High f frequency  
T
Monolithic Darlington configuration with  
integrated antiparallel collector-emitter diode  
1
Applications  
2
3
Linear and switching industrial equipment  
SOT-32  
Description  
The devices are manufactured in planar base  
island technology with monolithic Darlington  
configuration.  
Figure 1.  
Internal schematic diagram  
R1 typ.= 15 K  
R2 typ.= 100 Ω  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
BD677  
BD677A  
BD678  
BD678A  
BD679  
BD679A  
BD680  
BD680A  
BD681  
BD682  
BD677  
BD677A  
BD678  
BD678A  
BD679  
BD679A  
BD680  
BD680A  
BD681  
BD682  
SOT-32  
Tube  
January 2008  
Rev 5  
1/12  
www.st.com  
12  
Contents  
BD6xxx  
Contents  
1
2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
2.2  
Typical characteristic (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
2/12  
BD6xxx  
Absolute maximum ratings  
1
Absolute maximum ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Value  
BD677  
BD679  
BD681  
NPN  
Parameter  
BD677A  
BD679A  
Unit  
BD678  
BD680  
PNP  
BD682  
BD678A  
BD680A  
VCBO  
VCEO  
VEBO  
IC  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
Emitte-base voltage (IC = 0)  
Collector current  
60  
80  
100  
V
5
V
A
4
ICM  
Collector peak current  
6
0.1  
A
IB  
Base current  
A
PTOT  
Tstg  
TJ  
Total dissipation at Tcase = 25°C  
Storage temperature  
40  
W
°C  
°C  
-65 to 150  
150  
Max. operating junction temperature  
Note:  
For PNP types voltage and current values are negative  
3/12  
Electrical characteristics  
BD6xxx  
2
Electrical characteristics  
(T  
= 25°C; unless otherwise specified)  
case  
Table 3.  
Symbol  
Electrical characteristics  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
Collector cut-off current  
(IB = 0)  
ICEO  
ICBO  
IEBO  
VCE = half rated VCEO  
0.5  
0.2  
mA  
mA  
mA  
VCE = rated VCBO  
VCE = rated VCBO  
Tc = 100 °C  
Collector cut-off current  
(IE = 0)  
2
2
Emitter cut-off current  
(IC = 0)  
VEB = 5 V  
for BD677, BD677A,  
BD678, BD678A  
60  
IC = 50 mA  
Collector-emitter  
for BD679, BD679A,  
BD680, BD680A  
(1)  
V
VCEO(sus)  
80  
sustaining voltage (IB = 0)  
IC = 50 mA  
for BD681, BD682  
IC = 50 mA  
100  
for BD677, BD678,  
BD679, BD680, BD681,  
BD682  
2.5  
2.8  
Collector-emittersaturation  
voltage  
IC = 1.5 A  
IB = 30 mA  
(1)  
V
VCE(sat)  
for BD677A, BD678A,  
BD679A, BD680A  
IC = 2 A  
IB = 40 mA  
for BD677, BD678,  
BD679, BD680, BD681,  
BD682  
IC = 1.5 A ___ VCE = 3 V  
(1)  
Base-emitter voltage  
2.5  
V
VBE  
for BD677A, BD678A,  
BD679A, BD680A  
IC = 2 A  
VCE = 3 V  
4/12  
BD6xxx  
Electrical characteristics  
Min. Typ. Max. Unit  
Table 3.  
Symbol  
Electrical characteristics (continued)  
Parameter Test conditions  
for BD677, BD678,  
BD679, BD680, BD681,  
BD682  
IC = 1.5 A_ _ VCE = 3 V  
(1)  
DC current gain  
750  
hFE  
for BD677A, BD678A,  
BD679A, BD680A  
IC = 2 A_  
_
VCE = 3 V  
1. Pulsed duration = 300 ms, duty cycle 1.5%.  
Note:  
For PNP types voltage e current values are negative.  
5/12  
Electrical characteristics  
BD6xxx  
2.1  
Typical characteristic (curves)  
Figure 2.  
Figure 4.  
Figure 6.  
DC current gain (NPN)  
Figure 3.  
DC current gain (PNP)  
DC current gain (NPN)  
Figure 5.  
DC current gain (PNP)  
Collector-emitter saturation Figure 7.  
voltage (NPN)  
Collector-emitter saturation  
voltage (PNP)  
6/12  
BD6xxx  
Electrical characteristics  
Figure 8.  
Base-emitter saturation  
voltage (NPN)  
Figure 9.  
Base-emitter saturation  
voltage (PNP)  
Figure 10. Base-emitter voltage (NPN)  
Figure 11. Base-emitter voltage (PNP)  
Figure 12. Resistive load switching time Figure 13. Resistive load switching time  
(NPN, on) (PNP, on)  
7/12  
Electrical characteristics  
BD6xxx  
Figure 14. Resistive load switching time Figure 15. Resistive load switching time  
(NPN, off) (PNP, off)  
2.2  
Test circuit  
Figure 16. Resistive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
Note:  
For PNP types voltage e current values are negative.  
8/12  
BD6xxx  
Package mechanical data  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
9/12  
Package mechanical data  
BD6xxx  
10/12  
BD6xxx  
Revision history  
4
Revision history  
Table 4.  
Date  
Document revision history  
Revision  
Changes  
21-Jun-2004  
14-Jan-2008  
4
1. Technology change from epybase to planar.  
2. Updated Section 2.1: Typical characteristic (curves) on  
5
page 6  
3. Content reworked to improve readability.  
11/12  
BD6xxx  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT  
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING  
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,  
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE  
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2008 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
12/12  
配单直通车
BD679ABULK产品参数
型号:BD679ABULK
生命周期:Contact Manufacturer
IHS 制造商:CONTINENTAL DEVICE INDIA LTD
包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant
风险等级:5.64
最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V
配置:DARLINGTON
最小直流电流增益 (hFE):750
JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3
元件数量:1
端子数量:3
最高工作温度:150 °C
最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
极性/信道类型:NPN
功耗环境最大值:1.25 W
最大功率耗散 (Abs):40 W
参考标准:TS 16949
表面贴装:NO
端子形式:THROUGH-HOLE
端子位置:SINGLE
晶体管元件材料:SILICON
VCEsat-Max:2.8 V
Base Number Matches:1
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