BD746, BD746A, BD746B, BD746C
PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
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Designed for Complementary Use with the
BD745 Series
SOT-93 PACKAGE
(TOP VIEW)
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115 W at 25°C Case Temperature
20 A Continuous Collector Current
25 A Peak Collector Current
B
C
E
1
2
3
Customer-Specified Selections Available
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BD746
-50
BD746A
BD746B
BD746C
BD746
-70
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
VCBO
V
-90
-110
-45
BD746A
BD746B
BD746C
-60
VCEO
V
-80
-100
Emitter-base voltage
VEBO
IC
ICM
IB
-5
V
A
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
-20
-25
A
-7
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Ptot
Ptot
115
W
W
mJ
°C
°C
°C
°C
3.5
2
½LIC
90
Operating free air temperature range
TA
Tj
-65 to +150
-65 to +150
-65 to +150
260
Operating junction temperature range
Storage temperature range
Tstg
TL
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 W,
VBE(off) = 0, RS = 0.1 W, VCC = -20 V.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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