BD750L05G-CTR中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

Datasheet

Single-Output LDO Regulators

Ultra Low Quiescent Current LDO

Regulator

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●General Description

●Key specification

The BD7xxL2EFJ-C, BD7xxU2EFJ-C,

◼

Ultra low quiescent current:

Output voltage:

6μA (Typ)

3.3 V or 5.0 V (Typ)

200mA

BD7xxL2FP-C, BD7xxL2FP3-C are low quiescent

regulators featuring 50V absolute maximum voltage,

and output voltage accuracy of ±2%, 200mA output

current and 6μA (Typ) current consumption. These

regulators are therefore ideal for applications

requiring a direct connection to the battery and a

low current consumption. Ceramic capacitors can

be used for compensation of the output capacitor

phase. Furthermore, these ICs also feature

overcurrent protection to protect the device from

damage caused by short-circuiting and an

integrated thermal shutdown to protect the device

from overheating at overload conditions.

Output current capability:

High output voltage accuracy:

Low ESR ceramic capacitor

can be used as output capacitor

AEC-Q100 Qualified⁽*²⁾

(*²:Grade1)

±2%

◼

●Packages

W (Typ) x D (Typ) x H (Max)

4.90mm x 6.00mm x 1.00mm

◼

EFJ: HTSOP-J8

●Features

FP: TO252-3

6.50mm x 9.50mm x 2.50mm

6.53mm x 7.00mm x 1.80mm

◼

Ultra low quiescent current: 6μA (Typ)

Output current capability: 200mA

Output voltage: 3.3 V or 5.0 V (Typ)

High output voltage accuracy: ±2%

Low saturation voltage by using PMOS output

transistor.

◼

Integrated overcurrent protection to protect the

IC from damage caused by output

short-circuiting.

◼

FP3：SOT223-4(F)

◼

Integrated thermal shutdown to protect the IC

from overheating at overload conditions.

Low ESR ceramic capacitor can be used as

output capacitor.

HTSOP-J8, TO252-3, SOT223-4(F) ⁽*¹⁾

3type package

Figure 1. Package Outlook

(*¹：SOT223-4, SOT223-4F)

●Applications

◼

Automotive (body, audio system, navigation system, etc.)

●Typical Application Circuits

◼ Components externally connected: 0.1 µF ≤ CIN, 4.7 µF ≤ COUT (Min)

*Electrolytic, tantalum and ceramic capacitors can be used.

FIN

8:VCC

7:N.C

6:N.C 5:GND

BD7xxL2FP3-C

2:N.C

BD7xxL2EFJ-C

BD7xxU2EFJ-C

BD7xxL2FP-C

CIN

1:VCC

3:VOUT

1:VCC

2:N.C

3:VOUT

1

1:VOUT 2:N.C

3:N.C

4:N.C

CIN

COUT

CIN

COUT

HTSOP-J8

TO252-3

SOT223-4(F)

Figure 2. Typical Application Circuits

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・14・001

1/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Ordering Information

B

D

7

x

L

2

E

F

J

-

C E

2

Output

Automotive

L: L Series

U: L Series,

Additional

Package

Product Rank

C: for Automotive Specification

E2: Embossed Tape and Reel

Packaging and Forming

Voltage

33: 3.3V

50: 5.0V

EFJ: HTSOP-J8

FP: TO252-3

FP3: SOT223-4(Ｆ)

production line

●Lineup

Output

Output current

voltage

(Typ)

Package type

Orderable Part Number

Remarks

ability

HTSOP-J8

TO252-3

BD733L2EFJ-CE2

BD733U2EFJ-CE2

BD733L2FP-CE2

BD733L2FP3-CE2

BD750L2EFJ-CE2

BD750U2EFJ-CE2

BD750L2FP-CE2

BD750L2FP3-CE2

Production LineA ^{(Note 1)}

Production LineB ^{(Note 1)}

3.3 V

SOT223-4(F)

HTSOP-J8

TO252-3

200 mA

Production LineA ^{(Note 1)}

Production LineB ^{(Note 1)}

5.0 V

SOT223-4(F)

(Note 1) For the purpose of improving production efficiency, Production Line A and B have a multi-line configuration.

Electric characteristics noted in Datasheet does not differ between Production Line A and B. Production Line B is recommended for new product.

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

2/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Pin Configuration

TO252-3

(TOP VIEW)

HTSOP-J8

(TOP VIEW)

SOT223-4(F)

(TOP VIEW)

8

7

6

5

FIN

1

2

3

4

1

2

3

1

2

3

Figure 3. Pin Configuration

●Pin Description

■HTSOP-J8

■TO252-3, SOT223-4(F)

Pin No. Pin Name

Function

Pin No. Pin Name

Function

Output pin

1

2

VCC

N.C./GND

VOUT

Supply voltage input pin

1

2

3

4

5

6

7

8

VOUT

N.C.

GND

N.C.

VCC

TO252-3: N.C.

SOT223-4(F): GND

Not connected

GND

3

Output pin

GND

FIN

GND

(※N.C. terminals are not need to connect to GND.)

Not connected

Supply voltage input pin

(※N.C. terminals are not need to connect to GND.

(※Exposed die pad is need to be connected to GND in the inside of IC.)

(※Exposed die pad is connected to GND in the inside of IC.)

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

3/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Block Diagram

■HTSOP-J8

VCC(8PIN)

N.C.(7PIN)

N.C.(6PIN)

DRIVER

GND(5PIN)

PREREG

VREF

OCP

TSD

VOUT(1PIN)

N.C.(2PIN)

N.C.(3PIN)

N.C.(4PIN)

■TO252-3, SOT223-4(F)

GND(FIN)

PREREG

DRIVER

VREF

OCP

TSD

TO252-3

:N.C. (2PIN)

VCC(1PIN)

VOUT(3PIN)

SOT223-4(F):GND(2PIN)

Figure 4. Block Diagram

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

4/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Absolute Maximum Ratings（Ta=25°C）

Parameter

Symbol

VCC

Ratings

-0.3 to +50.0

-40 to +125

-55 to +150

150

Unit

V

*1

Supply Voltage

Operating Temperature Range

Storage Temperature Range

Topr

°C

Tstg

Maximum Junction Temperature

Tjmax

*1 Pd should not be exceeded.

●Operating Conditions（-40 < Ta < +125°C）

■BD733L2EFJ-C, BD733U2EFJ-C, BD733L2FP-C, BD733L2FP3-C

Parameter

Symbol

VCC

Min

4.37

3.0

0

Max

45.0

-

Unit

*2

*3

Supply Voltage

Startup Voltage

Output Current

V

VCC

IOUT

200

mA

■BD750L2EFJ-C, BD750U2EFJ-C, BD750L2FP-C, BD750L2FP3-C

Parameter

Symbol

VCC

Min

5.8

3.0

0

Max

45.0

-

Unit

V

*2

*3

Supply Voltage

Startup Voltage

Output Current

VCC

V

IOUT

mA

200

*2 For output voltage, refer to the dropout voltage corresponding to the output current.

*3 When IOUT=0mA.

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

5/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Thermal Resistance^(*1)

Thermal Resistance (Typ)

Parameter

Symbol

Unit

1s^(*3)

2s2p^(*4)

HTSOP-J8

Junction to Ambient

Junction to Top Characterization Parameter^(*2)

θ_JA

130

15

34

7

°C/W

Ψ_JT

TO252-3

Junction to Ambient

Junction to Top Characterization Parameter^(*2)

θ_JA

136

17

23

3

°C/W

Ψ_JT

SOT223-4(F)

Junction to Ambient

Junction to Top Characterization Parameter^(*2)

θ_JA

164

20

71

14

°C/W

Ψ_JT

(*1)Based on JESD51-2A(Still-Air).

(*2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface

of the component package.

(*3)Using a PCB board based on JESD51-3.

Layer Number of

Measurement Board

Material

FR-4

Board Size

Single

114.3mm x 76.2mm x 1.57mmt

Top

Copper Pattern

Thickness

70μm

Footprints and Traces

(*4)Using a PCB board based on JESD51-5, 7.

Layer Number of

Material

Thermal Via^(*5)

Board Size

114.3mm x 76.2mm x 1.6mmt

2 Internal Layers

Measurement Board

Pitch

Diameter

4 Layers

FR-4

1.20mm

Φ0.30mm

Top

Bottom

Copper Pattern

Thickness

70μm

Copper Pattern

Thickness

35μm

Copper Pattern

Thickness

70μm

Footprints and Traces

74.2mm x 74.2mm

(*5) This thermal via connects with the copper pattern of all layers.

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

6/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Electrical Characteristics (BD733L2EFJ-C, BD733U2EFJ-C, BD733L2FP-C, BD733L2FP3-C)

(Unless otherwise specified, -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA, Reference value: Ta=25°C)

Limit

Parameter

Symbol

Unit

Conditions

Min

-

Typ Max

15

Bias current

Ib

μA

V

6

8V < VCC < 16V

0mA < IOUT < 100mA

Output voltage

Dropout voltage

Ripple rejection

VOUT

ΔVd

3.23 3.30 3.37

V

VCC=VOUT×0.95, IOUT=200mA

-

0.6

63

1.0

-

f=120Hz, ein=1Vrms,

IOUT=100mA

R.R.

dB

50

Line regulation

Load regulation

Reg I

mV 8V < VCC < 16V

-

5

20

Reg L

mV 10mA < IOUT < 200mA

●Electrical Characteristics (BD750L2EFJ-C, BD750U2EFJ-C, BD750L2FP-C, BD750L2FP3-C)

(Unless otherwise specified, -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA, Reference value: Ta=25°C)

Limit

Parameter

Symbol

Unit

Conditions

Min

-

Typ Max

Bias current

Ib

6

15

5.1

0.7

μA

V

8V < VCC < 16V

0mA < IOUT < 100mA

4.9

-

5.0

0.4

Output voltage

Dropout voltage

Ripple rejection

VOUT

ΔVd

V

VCC=VOUT×0.95, IOUT=200mA

f=120Hz, ein=1Vrms,

IOUT=100mA

50

R.R.

60

-

dB

-

Line regulation

Load regulation

Reg I

5

20

mV 8V < VCC < 16V

Reg L

mV 10mA < IOUT < 200mA

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

7/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Typical Performance Curves

■BD733L2EFJ-C, BD733U2EFJ-C, BD733L2FP-C, BD733L2FP3-C Reference data

Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA

100

90

80

70

60

50

40

30

20

10

0

6

5

4

3

2

1

0

-40°C

25°C

125°C

-40°C

25°C

125°C

0

10

20

30

40

50

0

10

20

30

40

50

SUPPLY VOLTAGE : VCC[V]

Figure 5. Bias current

Figure 6. Output voltage vs. Supply voltage

IOUT=10mA

6

5

4

3

2

1

0

6

-40°C

25°C

125°C

-40°C

25°C

125°C

5

4

3

2

1

0

200

400

600

800

1000

0

10

20

30

40

50

OUTPUT CURRENT : IOUT[mA]

SUPPLY VOLTAGE : VCC[V]

Figure 7. Output voltage vs. Supply voltage

IOUT=100mA

Figure 8. Output voltage vs. Load

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

8/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Typical Performance Curves – continued

■BD733L2EFJ-C, BD733U2EFJ-C, BD733L2FP-C, BD733L2FP3-C Reference data

Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA

90

80

70

60

50

40

30

20

10

0

1.2

0.8

0.4

0.0

-40°C

25°C

125°C

-40°C

25°C

125°C

10

100

1000

10000

100000

0

40

80

120

160

200

FREQUENCY : f[Hz]

OUTPUT CURRENT : IOUT[mA]

Figure 9. Dropout voltage

Figure 10. Ripple rejection

(ein=1Vrms,IOUT=100mA)

6

5

4

3

2

1

0

20

18

16

14

12

10

8

-40°C

25°C

125°C

6

4

2

0

40

80

120

160

200

100

120

140

160

180

200

OUTPUT CURRENT : IOUT[mA]

AMBIENT TEMPERATURE : Ta[℃]

Figure 11. Total supply current vs. Load

Figure 12. Thermal shutdown

(Output voltage vs. Temperature)

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

9/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Typical Performance Curves – continued

■BD733L2EFJ-C, BD733U2EFJ-C, BD733L2FP-C, BD733L2FP3-C Reference data

Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA

10

3.354

9

3.334

8

3.314

7

3.294

6

3.274

5

3.254

4

3.234

-40

0

40

80

120

-40

0

40

80

120

AMBIENT TEMPERATURE : Ta[℃]

Figure 13. Output voltage vs. Temperature

Figure 14. Bias current vs. Temperature

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

10/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Typical Performance Curves – continued

■BD750L2EFJ-C, BD750U2EFJ-C, BD750L2FP-C, BD750L2FP3-C Reference data

Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA

100

90

80

70

60

50

40

30

20

10

0

8

7

6

5

4

3

2

1

0

-40°C

25°C

125°C

-40°C

25°C

125°C

0

10

20

30

40

50

0

10

20

30

40

50

SUPPLY VOLTAGE : VCC[V]

Figure 15. Bias current

Figure 16. Output voltage vs. Supply voltage

8

7

6

5

4

3

2

1

0

8

7

6

5

4

3

2

1

0

-40°C

25°C

125°C

-40°C

25°C

125°C

0

200

400

600

800

1000

0

10

20

30

40

50

OUTPUT CURRENT : IOUT[mA]

SUPPLY VOLTAGE : VCC[V]

Figure 17. Output voltage vs. Supply voltage

IOUT=100mA

Figure 18. Output voltage vs. Load

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

11/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Typical Performance Curves – continued

■BD750L2EFJ-C, BD750U2EFJ-C, BD750L2FP-C, BD750L2FP3-C Reference data

Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA

90

80

70

60

50

40

30

20

10

0

1.2

0.8

0.4

0.0

-40°C

25°C

125°C

-40°C

25°C

125°C

0

40

80

120

160

200

10

100

1000

10000

100000

OUTPUT CURRENT : IOUT[mA]

FREQUENCY : f[Hz]

Figure 19. Dropout voltage

Figure 20. Ripple rejection

(ein=1Vrms,IOUT=100mA)

20

6

5

4

3

2

1

0

18

16

14

12

10

8

-40°C

25°C

125°C

6

4

2

0

40

80

120

160

200

100

120

140

160

180

200

OUTPUT CURRENT : IOUT[mA]

AMBIENT TEMPERATURE : Ta[℃]

Figure 21. Total supply current vs. Load

Figure 22. Thermal shutdown

(Output voltage vs. Temperature)

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

12/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Typical Performance Curves – continued

■BD750L2EFJ-C, BD750U2EFJ-C, BD750L2FP-C, BD750L2FP3-C Reference data

Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA

10

9

5.100

5.080

5.060

5.040

5.020

5.000

4.980

4.960

4.940

4.920

4.900

8

7

6

5

4

-40

0

40

80

120

-40

0

40

80

120

AMBIENT TEMPERATURE : Ta[℃]

Figure 23. Output voltage vs. Temperature

Figure 24. Bias current vs. Temperature

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

13/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Measurement Circuit (BD7xxL2EFJ-C BD7xxU2EFJ-C Series) HTSOP-J8

8:VCC 7:N.C. 6:N.C. 5:GND

BD7xxL2EFJ-C

BD7xxU2EFJ-C

BD7xxL2EFJ-C

BD7xxU2EFJ-C

BD7xxL2EFJ-C

BD7xxU2EFJ-C

1µF

1:VOUT 2:N.C. 3:N.C. 4:N.C.

4.7µF

IOUT

4.7µF

Measurement setup for Figure 8, 18

Measurement setup for

Figure 6, 7, 12, 13, 16, 17, 22, 23

Measurement setup for Figure 5, 14, 15, 24

8:VCC 7:N.C. 6:N.C. 5:GND

BD7xxL2EFJ-C

8:VCC 7:N.C. 6:N.C. 5:GND

BD7xxL2EFJ-C

1Vrms

BD7xxL2EFJ-C

BD7xxU2EFJ-C

1µF

1:VOUT 2:N.C. 3:N.C. 4:N.C.

4.7µF

IOUT

4.7µF

IOUT

4.7µF

IOUT

Measurement setup for Figure 11, 21

Measurement setup for Figure 9, 19

Measurement setup for Figure 10, 20

●Measurement Circuit (BD7xxL2FP-C Series) TO252-3

FIN

BD7xxL2FP-C

1:VCC 2:N.C. 3:VOUT

1µF

4.7µF

1µF

4.7µF

IOUT

Measurement setup for

Figure 6, 7, 12, 13, 16, 17, 22, 23

Measurement setup for Figure 8, 18

Measurement setup for Figure 5, 14, 15, 24

FIN

BD7xxL2FP-C

1:VCC 2:N.C. 3:VOUT

1Vrms

1µF

M

1µF

4.7µF

IOUT

4.7µF

IOUT

1µF

4.7µF

IOUT

Measurement setup for Figure 11, 21

Measurement setup for Figure 10, 20

Measurement setup for Figure 9, 19

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

14/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Measurement Circuit (BD7xxL2FP3-C Series) SOT223-4(F)

FIN

BD7xxL2FP3-C

1:VCC

2:GND

3:VOUT

1:VCC

2:GND

3:VOUT

2:GND

3:VOUT

1:VCC

1uF

4.7uF

1uF

4.7uF

Measurement setup for

Figure 6, 7, 12, 13, 16, 17, 22, 23

Measurement setup for Figure 8, 18

Measurement setup for Figure 5, 14, 15, 24

FIN

BD7xxL2FP3-C

1:VCC

2:GND

3:VOUT

1:VCC

2:GND

3:VOUT

1:VCC

2:GND

3:VOUT

1Vrms

M

4.7uF

IOUT

4.7uF

IOUT

1uF

Measurement setup for Figure 11, 21

Measurement setup for Figure 9, 19

Measurement setup for Figure 10, 20

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

15/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Selection of Components Externally Connected

・VCC pin

Insert capacitors with a capacitance of 0.1μF or higher between the VCC and GND pin. Choose the capacitance

according to the line between the power smoothing circuit and the VCC pin. Selection of the capacitance also

depends on the application. Verify the application and allow for sufficient margins in the design. We recommend

using a capacitor with excellent voltage and temperature characteristics.

・Output pin capacitor

In order to prevent oscillation, a capacitor needs to be placed between the output pin and GND pin. We recommend

using a capacitor with a capacitance of 4.7μF or higher. Electrolytic, tantalum and ceramic capacitors can be used.

When selecting the capacitor ensure that the capacitance of 4.7μF or higher is maintained at the intended applied

voltage and temperature range. Due to changes in temperature the capacitor’s capacitance can fluctuate possibly

resulting in oscillation. For selection of the capacitor refer to the IOUT vs. ESR data. The stable operation range

given in the reference data is based on the standalone IC and resistive load. For actual applications the stable

operating range is influenced by the PCB impedance, input supply impedance and load impedance. Therefore

verification of the final operating environment is needed.

When selecting a ceramic type capacitor, we recommend using X5R, X7R or better with excellent temperature and

DC-biasing characteristics and high voltage tolerance.

Also, in case of rapidly changing input voltage and load current, select the capacitance in accordance with verifying

that the actual application meets with the required specification.

●Measurement setup

FIN

8:VCC 7:N.C. 6:N.C. 5:GND

BD7xxL2FP3-C

BD7xxL2FP-C

BD7xxL2EFJ-C

BD7xxU2EFJ-C

CIN

1:VCC

2:GND

3:VOUT

1:VCC 2:N.C. 3:VOUT

1:VOUT 2:N.C. 3:N.C. 4:N.C.

ESR

COUT

CIN

IOUT

COUT

SOT223-4(F)

HTSOP-J8

TO252-3

○Condition

VCC=13.5V

CIN=0.1μF

4.7µF < COUT < 100µF

Ta=-40 < Ta < +125℃

○Condition

VCC=13.5V

CIN=0.1µF

4.7µF < COUT < 100µF

Ta=-40 < Ta < +125℃

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

16/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Power Dissipation

■HTSOP-J8

5.0

IC mounted on ROHM standard board based on JEDEC.

① : 1 - layer PCB

(Copper foil area on the reverse side of PCB: 0 mm x 0 mm)

Board material: FR4

Board size: 114.3 mm x 76.2 mm x 1.57 mmt

Mount condition: PCB and exposed pad are soldered.

Top copper foil: ROHM recommended

footprint + wiring to measure, 2 oz. copper.

4.0

3.0

2.0

1.0

0.0

②3.67 W

② : 4 - layer PCB

(2 inner layers and Copper foil area on the reverse side of PCB:

74.2 mm x 74.2 mm)

Board material: FR4

①0.96 W

Board size: 114.3 mm x 76.2 mm x 1.60 mmt

Mount condition: PCB and exposed pad are soldered.

Top copper foil: ROHM recommended

footprint + wiring to measure, 2 oz. copper.

2 inner layers copper foil area of PCB

: 74.2 mm x 74.2 mm, 1 oz. copper.

Copper foil area on the reverse side of PCB

: 74.2 mm x 74.2 mm, 2 oz. copper.

0

25

50

75

100

125

150

Ambient Temperature: Ta [ C]

Figure 25. HTSOP-J8 Package Data

Condition①: θ_JA= 130 C / W, Ψ_JT(top center) = 15 °C / W

Condition②: θ_JA= 34 C / W, Ψ_JT(top center) = 7 °C / W

■TO252-3

10.0

IC mounted on ROHM standard board based on JEDEC.

① : 1 - layer PCB

(Copper foil area on the reverse side of PCB: 0 mm x 0 mm)

Board material: FR4

Board size: 114.3 mm x 76.2 mm x 1.57 mmt

Mount condition: PCB and exposed pad are soldered.

Top copper foil: ROHM recommended

8.0

6.0

②5.43 W

footprint + wiring to measure, 2 oz. copper.

② : 4 - layer PCB

4.0

2.0

0.0

(2 inner layers and Copper foil area on the reverse side of PCB:

74.2 mm x 74.2 mm)

Board material: FR4

Board size: 114.3 mm x 76.2 mm x 1.60 mmt

Mount condition: PCB and exposed pad are soldered.

Top copper foil: ROHM recommended

footprint + wiring to measure, 2 oz. copper.

2 inner layers copper foil area of PCB

: 74.2 mm x 74.2 mm, 1 oz. copper.

Copper foil area on the reverse side of PCB

: 74.2 mm x 74.2 mm, 2 oz. copper.

①0.92 W

0

25

50

75

100

125

150

Ambient Temperature: Ta [ C]

Figure 26. TO252-3 Package Data

Condition①: θ_JA= 136 C / W, Ψ_JT(top center) = 17 °C / W

Condition②: θ_JA= 23 °C / W, Ψ_JT(top center) = 3 °C / W

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

TSZ22111・15・001

17/30

19.Nov.2021 Rev.008

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

■SOT223-4(F)

2.0

IC mounted on ROHM standard board based on JEDEC.

②1.76 W

①0.76 W

① : 1 - layer PCB

(Copper foil area on the reverse side of PCB: 0 mm x 0 mm)

Board material: FR4

Board size: 114.3 mm x 76.2 mm x 1.57 mm

Mount condition: PCB and exposed pad are soldered.

Top copper foil: ROHM recommended

footprint + wiring to measure, 2 oz. copper.

1.5

1.0

0.5

0.0

② : 4 - layer PCB

(2 inner layers and Copper foil area on the reverse side of PCB:

74.2 mm x 74.2 mm)

Board material: FR4

Board size: 114.3 mm x 76.2 mm x 1.60 mm

Mount condition: PCB and exposed pad are soldered.

Top copper foil: ROHM recommended

footprint + wiring to measure, 2 oz. copper.

2 inner layers copper foil area of PCB

: 74.2 mm x 74.2 mm, 1 oz. copper.

Copper foil area on the reverse side of PCB

: 74.2 mm x 74.2 mm, 2 oz. copper.

0

25

50

75

100

125

150

Ambient Temperature: Ta [ C]

Figure 27. SOT223-4(F) Package Data

Condition①: θ_JA= 164 C / W, Ψ_JT(top center) = 20 °C / W

Condition②: θ_JA= 71 C / W, Ψ_JT(top center) = 14 °C / W

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

TSZ22111・15・001

18/30

19.Nov.2021 Rev.008

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

Refer to the heat mitigation characteristics illustrated in Figure 25 to Figure 27 when using the IC in an environment of Ta≥25°C.

The characteristics of the IC are greatly influenced by the operating temperature, and it is necessary to operate under the

maximum junction temperature Timax.

Even if the ambient temperature Ta is at 25°C it is possible that the junction temperature Tj reaches high temperatures.

Therefore, the IC should be operated within the power dissipation range.

The following method is used to calculate the power consumption Pc (W)

Pc=(VCC－VOUT)×IOUT＋VCC×Ib

VCC : Input voltage

VOUT : Output voltage

Power dissipation Pd ≥ Pc

IOUT : Load current

The load current Lo is obtained by operating the IC within the power dissipation range.

Ib

: Bias current

Ishort : Shorted current

Pd－VCC×Ib

VCC－VOUT

IOUT ≤

(Refer to Figure 11 and Figure 21 for the Ib)

Thus, the maximum load current IOUTmax for the applied voltage VCC can be calculated during the thermal design process.

●HTSOP-J8

■Calculation example 1) with Ta=125°C, VCC=13.5V, VOUT=3.3V

0.73－13.5×Ib

IOUT ≤

θja=34°C/W → -29.4mW/°C

10.2

25°C=3.67W → 125°C=0.73W

IOUT ≤ 71.5mA (Ib: 6µA)

At Ta=125°C with Figure 25 ② condition, the calculation shows that ca 71.5mA of output current is possible at 10.2V potential

difference across input and output.

■Calculation example 2) with Ta=125°C, VCC=13.5V, VOUT=5.0V

0.73－13.5×Ib

IOUT ≤

θja=34°C/W → -29.4mW/°C

8.5

25°C=3.67W → 125°C=0.73W

IOUT ≤ 85.8mA (Ib: 6µA)

At Ta=125°C with Figure 25 ② condition, the calculation shows that ca 85.8mA of output current is possible at 8.5V potential

difference across input and output.

The thermal calculation shown above should be taken into consideration during the thermal design in order to keep the whole

operating temperature range within the power dissipation range.

In the event of shorting (i.e. VOUT and GND pins are shorted) the power consumption Pc of the IC can be calculated as follows:

Pc=VCC×(Ib+Ishort)

(Refer to Figure 8 and Figure 18 for the Ishort)

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

19/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●TO252-3

■Calculation example 3) with Ta=125°C, VCC=13.5V, VOUT=3.3V

1.08－13.5×Ib

IOUT ≤

θja=23°C/W → -43.5mW/°C

10.2

25°C=5.43W → 125°C=1.08W

IOUT ≤ 105mA (Ib: 6µA)

At Ta=125°C with Figure 26 ② condition, the calculation shows that ca 105mA of output current is possible at 10.2V potential

difference across input and output.

■Calculation example 4) with Ta=125°C, VCC=13.5V, VOUT=5.0V

1.08－13.5×Ib

IOUT ≤

θja=23°C/W → -43.5mW/°C

8.5

25°C=5.43W → 125°C=1.08W

IOUT ≤ 127mA (Ib: 6µA)

At Ta=125°C with Figure 26 ② condition, the calculation shows that ca 127mA of output current is possible at 8.5V potential

difference across input and output.

The thermal calculation shown above should be taken into consideration during the thermal design in order to keep the whole

operating temperature range within the power dissipation range.

In the event of shorting (i.e. VOUT and GND pins are shorted) the power consumption Pc of the IC can be calculated as follows:

Pc=VCC×(Ib+Ishort)

(Refer to Figure 8 and Figure 18 for the Ishort)

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

20/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●SOT223-4(F)

■Calculation example 5) with Ta=125°C, VCC=13.5V, VOUT=3.3V

0.35－13.5×Ib

IOUT ≤

θja=71°C/W → -14.1mW/°C

10.2

25°C=1.76W → 125°C=0.35W

IOUT ≤ 34.3mA (Ib: 6µA)

At Ta=125°C with Figure 27 ② condition, the calculation shows that ca 34.3mA of output current is possible at 10.2V potential

difference across input and output.

■Calculation example 6) with Ta=125°C, VCC=13.5V, VOUT=5.0V

0.35－13.5×Ib

IOUT ≤

θja=71°C/W → -14.1mW/°C

8.5

25°C=1.76W → 125°C=0.35W

IOUT ≤ 41.1mA (Ib: 6µA)

At Ta=125°C with Figure 27 ② condition, the calculation shows that ca 41.1mA of output current is possible at 8.5V potential

difference across input and output.

The thermal calculation shown above should be taken into consideration during the thermal design in order to keep the whole

operating temperature range within the power dissipation range.

In the event of shorting (i.e. VOUT and GND pins are shorted) the power consumption Pc of the IC can be calculated as follows:

Pc=VCC×(Ib+Ishort)

(Refer to Figure 8 and Figure 18 for the Ishort)

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

21/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Application Examples

・Applying positive surge to the VCC pin

If the possibility exists that surges higher than 50V will be applied to the VCC pin, a zenar diode should be placed

between the VCC pin and GND pin as shown in the figure below.

FIN

8:VCC 7:N.C. 6:N.C. 5:GND

BD7xxL2FP3-C

1:VCC

2:GND 3:VOUT

BD7xxL2EFJ-C

BD7xxU2EFJ-C

BD7xxL2FP-C

CIN

1:VCC

2:N.C. 3:VOUT

1:VOUT 2:N.C. 3:N.C. 4:N.C.

CIN

COUT

IOUT

CIN

COUT

HTSOP-J8

TO252-3

SOT223-4(F)

・Applying negative surge to the VCC pin

If the possibility exists that negative surges lower than the GND are applied to the VCC pin, a Shottky diode should be

place between the VCC pin and GND pin as shown in the figure below.

FIN

8:VCC 7:N.C. 6:N.C. 5:GND

BD7xxL2EFJ-C

BD7xxU2EFJ-C

BD7xxL2FP-C

BD7xxL2FP3-C

1:VCC

2:GND 3:VOUT

CIN

1:VCC

2:N.C. 3:VOUT

1:VOUT 2:N.C. 3:N.C. 4:N.C.

COUT

IOUT

CIN

COUT

CIN

COUT

IOUT

HTSOP-J8

・Implementing a protection diode

TO252-3

SOT223-4(F)

If the possibility exists that a large inductive load is connected to the output pin resulting in back-EMF at time of startup

and shutdown, a protection diode should be placed as shown in the figure below.

VOUT

●I/O equivalence circuits

○Input terminal

○Output terminal *inside of () shows 5V

VCC

7.5MΩ

(TYP)

5kΩ(TYP)

VOUT

5.575MΩ

(8.96MΩ)

(TYP)

R2

R1

1.0MΩ

(TYP)

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

22/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Operational Notes

1) Absolute maximum ratings

Exceeding the absolute maximum rating for supply voltage, operating temperature or other parameters can result in

damages to or destruction of the chip. In this event it also becomes impossible to determine the cause of the damage

(e.g. short circuit, open circuit, etc.). Therefore, if any special mode is being considered with values expected to exceed

the absolute maximum ratings, implementing physical safety measures, such as adding fuses, should be considered.

2) The electrical characteristics given in this specification may be influenced by conditions such as temperature, supply

voltage and external components. Transient characteristics should be sufficiently verified.

3) GND electric potential

Keep the GND pin potential at the lowest (minimum) level under any operating condition. Furthermore, ensure that,

including the transient, none of the pin’s voltages are less than the GND pin voltage.

4) GND wiring pattern

When both a small-signal GND and a high current GND are present, single-point grounding (at the set standard point) is

recommended. This in order to separate the small-signal and high current patterns and to ensure that voltage changes

stemming from the wiring resistance and high current do not cause any voltage change in the small-signal GND. Similarly,

care must be taken to avoid wiring pattern fluctuations in any connected external component GND.

5) Inter-pin shorting and mounting errors

Ensure that when mounting the IC on the PCB the direction and position are correct. Incorrect mounting may result in

damaging the IC. Also, shorts caused by dust entering between the output, input and GND pin may result in damaging

the IC.

6) Inspection using the set board

The IC needs to be discharged after each inspection process as, while using the set board for inspection, connecting a

capacitor to a low-impedance pin may cause stress to the IC. As a protection from static electricity, ensure that the

assembly setup is grounded and take sufficient caution with transportation and storage. Also, make sure to turn off the

power supply when connecting and disconnecting the inspection equipment.

7) Thermal design

The power dissipation under actual operating conditions should be taken into consideration and a sufficient margin

should be allowed for in the thermal design. On the reverse side of the package this product has an exposed heat pad for

improving the heat dissipation. Use both the front and reverse side of the PCB to increase the heat dissipation pattern as

far as possible. The amount of heat generated depends on the voltage difference across the input and output, load

current, and bias current. Therefore, when actually using the chip, ensure that the generated heat does not exceed the

Pd rating. Should by any condition the maximum junction temperature rating be exceeded by the temperature increase of

the chip, it may result in deterioration of the properties of the chip. The thermal impedance in this specification is based

on recommended PCB and measurement condition by JEDEC standard. Verify the application and allow sufficient

margins in the thermal design.

Tjmax: maximum junction temperature=150°C, Ta: ambient temperature (°C), θja: junction-to-ambient thermal

resistance (°C/W), Pd: power dissipation rating (W), Pc: power consumption (W), VCC: input voltage,

VOUT: output voltage, IOUT: load current, Ib: bias current

Power dissipation rating

Power consumption

Pd (W)=(Tjmax－Ta)/θja

Pc (W)=(VCC-VOUT)×IOUT＋VCC×Ib

8) Rapid variation in VCC voltage and load current

In case of a rapidly changing input voltage, transients in the output voltage might occur due to the use of a MOSFET as

output transistor. Although the actual application might be the cause of the transients, the IC input voltage, output current

and temperature are also possible causes. In case problems arise within the actual operating range, use

countermeasures such as adjusting the output capacitance.

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

23/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

9) Minute variation in output voltage

In case of using an application susceptible to minute changes to the output voltage due to noise, changes in input and

load current, etc., use countermeasures such as implementing filters.

10) Overcurrent protection circuit

This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This protection

circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in

applications characterized by continuous operation or transitioning of the protection circuit.

11) Thermal shutdown (TSD)

This IC incorporates and integrated thermal shutdown circuit to prevent heat damage to the IC. Normal operation should

be within the power dissipation rating, if however the rating is exceeded for a continued period, the junction temperature

(Tj) will rise and the TSD circuit will be activated and turn all output pins OFF. After the Tj falls below the TSD threshold

the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat

damage.

12) In some applications, the VCC and pin potential might be reversed, possibly resulting in circuit internal damage or

damage to the elements. For example, while the external capacitor is charged, the VCC shorts to the GND. Use a

capacitor with a capacitance with less than 1000μF. We also recommend using reverse polarity diodes in series or a

bypass between all pins and the VCC pin.

13) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a

variety of parasitic elements.

For example, in case a resistor and a transistor are connected to the pins as shown in the figure below then:

○ The P/N junction functions as a parasitic diode when GND > pin A for the resistor, or GND > pin B for the transistor.

○ Also, when GND > pin B for the transistor (NPN), the parasitic diode described above combines with the N layer of the

other adjacent elements to operate as a parasitic NPN transistor.

Parasitic diodes inevitably occur in the structure of the IC. Their operation can result in mutual interference between

circuits and can cause malfunctions and, in turn, physical damage to or destruction of the chip. Therefore do not employ

any method in which parasitic diodes can operate such as applying a voltage to an input pin that is lower than the

(P substrate) GND.

Resistor

Transistor (NPN)

Pin A

Pin B

B

E

C

Pin A

B

C

E

P⁺

P

N

P

N

Parasitic

Element

Parasitic

Element

P Substrate

GND GND

P Substrate

GND

Parasitic

Element

Parasitic

Element

Parasitic elements

or Transistors

Figure 28. Example of the Parasitic Device Structures

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

24/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Physical Dimension, Tape and Reel Information

Package Name

HTSOP-J8

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

25/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

Package Name

TO252-3

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

26/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

Package Name

SOT223-4

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

27/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

Package Name

SOT223-4F

Direction of Feed

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

28/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Marking Diagrams

HTSOP-J8

TO252-3

(TOP VIEW)

HTSOP-J8 (TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

LOT Number

SOT223-4(F)

SOT223-4(F) (TOP VIEW)

Part Number Marking

LOT Number

1PIN

Orderable

Part Number

Part Number Marking

D733L2

Output Voltage (V)

Package

HTSOP-J8

TO252-3

BD733L2EFJ-CE2

BD733U2EFJ-CE2

BD733L2FP-CE2

BD733L2FP3-CE2

BD750L2EFJ-CE2

BD750U2EFJ-CE2

BD750L2FP-CE2

BD750L2FP3-CE2

D733U2

3.3

BD733L2

D750L2

SOT223-4(F)

HTSOP-J8

TO252-3

D750U2

5.0

BD750L2

SOT223-4(F)

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

19.Nov.2021 Rev.008

TSZ22111・15・001

29/30

BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C

●Revision History

Date

Revision

001

Changes

21.Aug.2012

24.Sep.2012

New Release

002

New Release TO252-3 package.

Page 1.Series name is changed.

Page 6. Append Thermal Resistance θja, θjc.

Page 8. Figure 5, Page 9. Figure 11 All Quiescent current are integrated into Bias Current.

Page 10. Figure 14, Page 11. Figure 15 All Quiescent current are integrated into Bias Current.

Page 12. Figure 21, Page 13. Figure 24 All Quiescent current are integrated into Bias Current.

Page 17, 18. Figure 25, 26, 27, 28

14.Mar.2013

003

Power Dissipation is changed to be compliant with JEDEC standard.

Page 19, 20. Calculation examples are changed.

Page 25. “Application example” is deleted.

Figure 29 “ Example of the Parasitic Device Structures” is renewed.

AEC-Q100 Qualified

Page 28. Physical Quantity is changed.

30.Sep.2013

01.May.2014

14.Jul.2014

004

005

006

TO263-3F is changed to the individual registration.

Page 16. Output capacitor range was changed.

Page 28. HTSOP-J8 Marking Diagrams is changed.

Improve the description, SOT223-4F to SOT223-4(F).

Page 1. AEC-Q100 Grade postscript.

Page 6. Thermal resistance is changed for JESD51-2A.

Page 10. Revised Figure 13.

Page 17, 18. Value of the power dissipation is changed.

Page 23. Revised 7) in Operational Notes with change of Thermal resistance.

Page 27. Add Physical Dimension, Tape and Reel Information of SOT223-4 package.

17.Feb.2017

19.Nov.2021

007

008

Add BD7xxU2EFJ-C Series.

.

www.rohm.com

TSZ02201-0G1G0AN00010-1-2

TSZ22111・15・001

30/30

19.Nov.2021 Rev.008

Notice

Precaution on using ROHM Products

(Note 1)

1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment

,

aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,

bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales

representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any

ROHM’s Products for Specific Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.

Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the

use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our

Products under any special or extraordinary environments or conditions (as exemplified below), your independent

verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.

However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble

cleaning agents for cleaning residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PAA-E

Rev.004

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl₂, H₂S, NH₃, SO₂, and NO₂

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PAA-E

Rev.004

型号:	BD751
是否Rohs认证：	不符合
生命周期：	Obsolete
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	5.67
最大集电极电流 (IC)：	20 A
配置：	Single
最小直流电流增益 (hFE)：	15
JESD-609代码：	e0
最高工作温度：	175 °C
极性/信道类型：	PNP
最大功率耗散 (Abs)：	200 W
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
标称过渡频率 (fT)：	4 MHz
Base Number Matches：	1

电子百科

产品导航

产品型号BD750L2EFJ-C的Datasheet PDF文件预览

BD750L05G-CTR相关产品

BD750L05G-CTR相关文章

IC37:专业IC行业平台