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  • 北京元坤伟业科技有限公司

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产品型号BD78310EFJ-ME2的Datasheet PDF文件预览

Datasheet  
Class-AB Speaker Amplifier Series  
1.2 W  
Monaural Speaker Amplifier for Automotive  
BD783xxEFJ-M Series (Including products under development)  
General Description  
Key Specifications  
BD783xxEFJ-M Series are Class-AB monaural speaker  
amplifiers designed for automotive. Class-AB amplifiers  
have no requirements for care about EMI noise. Adopting  
power package HTSOP-J8 achieves high output power.  
Low quiescent current can reduce battery consumption.  
Shutdown current is also very low (0.1 µA Typ) and pop  
noise level when switching to shutdown is very small, so  
this device is suitable for applications in which the mode  
often changes between “shutdown state” and “active  
state”.  
Output Power  
1.2 W (Typ)  
(VDD = 5 V, RL = 8 Ω, THD+N = 1 %)  
Quiescent Current  
Shutdown Current  
2.5 mA (Typ)  
0.1 µA (Typ)  
Total Harmonic Distortion + Noise  
(RL = 8 Ω, f = 1 kHz)  
Output Noise Voltage  
Voltage Gain  
0.05 % (Typ)(Note 2)  
15 μVRMS (Typ)(Note 2)  
6.0 dB to 26.0 dB (Typ)  
Operating Temperature Range -40 ºC to +105 ºC  
(Note 2) Characteristic of BD78306EFJ-M  
Package  
HTSOP-J8  
W (Typ) x D (Typ) x H (Max)  
4.90 mm x 6.00 mm x 1.00 mm  
Features  
AEC-Q100 Qualified(Note 1)  
Pop Noise Reduction Function  
Shutdown Function  
Protection Functions  
-
-
-
Over Current Protection  
Thermal Shutdown  
Under Voltage Lock Out (UVLO)  
Power Package with Thermal Pad HTSOP-J8  
(Note 1) Grade2  
Applications  
Automotive Instruments  
HTSOP-J8  
Typical Application Circuit  
8
1
2
3
SDB  
BIAS  
INP  
OUTN  
GND  
VDD  
From System  
Control  
C1  
7
6
0.47 µF  
C4  
10 µF  
C2  
Input  
VDD  
Signal  
0.47 µF  
C3  
5
4
OUTP  
INN  
0.47 µF  
Figure 1  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 14 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
1/25  
BD783xxEFJ-M Series (Including products under development)  
Pin Configuration  
(TOP VIEW)  
1
2
3
4
8
7
6
5
OUTN  
GND  
SDB  
BIAS  
EXP-PAD  
VDD  
INP  
INN  
OUTP  
Caution:  
VDD and GND pins adjoin each other. In case that these pins are shorted each other, it may make characteristics of power  
supply device worse, or it may damage power supply device.  
Considering this point, select power supply device which has protection functions as over current protection.  
Pin Description  
Pin No.  
Pin Name  
SDB  
Function  
1
2
3
4
5
6
7
8
-
Shutdown  
Bias  
BIAS  
INP  
Positive differential input  
Negative differential input  
Positive output  
INN  
OUTP  
VDD  
Power supply  
GND  
Ground  
OUTN  
EXP-PAD  
Negative output  
Connect the EXP-PAD to Ground  
Control Pin’s Setting  
SDB pin  
Operating Mode  
Active  
High  
Low  
Shutdown  
Block Diagram  
6
VDD  
Ri[]  
(Typ)  
Rf[]  
(Typ)  
Part Number  
Rf  
BD78306EFJ-M  
BD78308EFJ-M*1  
BD78310EFJ-M  
BD78312EFJ-M*1  
BD78314EFJ-M*1  
BD78316EFJ-M*1  
BD78318EFJ-M*1  
BD78320EFJ-M*1  
BD78322EFJ-M*1  
BD78324EFJ-M*1  
BD78326EFJ-M  
*1 Under Development  
90  
80  
70  
60  
50  
40  
36  
30  
24  
20  
16  
90  
Ri  
80  
OUTP  
5
INP  
3
110  
120  
130  
140  
144  
150  
156  
160  
164  
Ri  
Rf  
Rf  
Ri  
Ri  
OUTN  
8
INN  
4
Over Current  
Protection  
Rf  
Thermal  
Shutdown  
BIAS  
2
Bias  
SDB  
1
Under Voltage  
Lock Out  
GND  
7
Figure 2  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
2/25  
BD783xxEFJ-M Series (Including products under development)  
Absolute Maximum Ratings (Ta = 25 °C)  
Parameter  
Supply Voltage  
Symbol  
Rating  
Unit  
VDDmax  
Vin  
7.0  
-0.3 to VDD+0.3  
-55 to +150  
150  
V
V
Input Voltage  
Storage Temperature Range  
Tstg  
°C  
°C  
Maximum Junction Temperature  
Tjmax  
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit  
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is  
operated over the absolute maximum ratings.  
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the  
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing  
board size and copper area so as not to exceed the maximum junction temperature rating.  
Thermal Resistance(Note 1)  
Thermal Resistance (Typ)  
Parameter  
Symbol  
Unit  
1s(Note 3)  
2s2p(Note 4)  
HTSOP-J8  
Junction to Ambient  
Junction to Top Characterization Parameter(Note 2)  
θJA  
149.4  
11.0  
39.8  
9.0  
°C/W  
°C/W  
ΨJT  
(Note 1) Based on JESD51-2A (Still-Air), using a BD78326EFJ-M Chip.  
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside  
surface of the component package.  
(Note 3) Using a PCB board based on JESD51-3.  
(Note 4) Using a PCB board based on JESD51-5, 7.  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
Single  
114.3 mm x 76.2 mm x 1.57 mmt  
Top  
Copper Pattern  
Thickness  
70 μm  
Footprints and Traces  
Thermal Via(Note 5)  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
114.3 mm x 76.2 mm x 1.6 mmt  
2 Internal Layers  
Pitch  
Diameter  
4 Layers  
1.20 mm  
Φ0.30 mm  
Top  
Copper Pattern  
Bottom  
Thickness  
70 μm  
Copper Pattern  
Thickness  
35 μm  
Copper Pattern  
Thickness  
70 μm  
Footprints and Traces  
74.2 mm x 74.2 mm  
74.2 mm x 74.2 mm  
(Note 5) This thermal via connects with the copper pattern of all layers.  
Use a thermal design that has sufficient margin in consideration of power dissipation under actual operating conditions. This  
IC exposes its frame at the backside of package. Note that this part is assumed to be used after providing heat dissipation  
treatment to improve heat dissipation efficiency. Try to put heat dissipation pattern as wide as possible not only on the board  
surface but also on the backside.  
Under the insufficient heat dissipation and excessive large signal input condition, power dissipation (Pdiss) exceeds  
maximum power dissipation (Pd) and thermal shutdown function may operate. Thermal design should be considered so that  
Pdiss is lower than Pd. Reference data of Pdiss is listed on P.7.  
(Tjmax : Maximum Junction Temperature = 150 °C, Ta : Operating Ambient Temperature[°C], θja : Package Thermal  
Resistance[°C/W])  
Power dissipation:  
푃푑 = (푇푗푚푎푥 − 푇푎) / 휃푗푎  
[W]  
This IC has thermal shutdown function. Thermal shutdown operates when Tj (junction temperature, which is assumed to be  
same as chip temperature) rises over about 180 °C (Typ) and be released when Tj fall about 160 °C (Typ) or less.  
Thermal shutdown is designed to protect the IC from temperature condition that exceeds Tjmax = 150 °C, not to protect or  
warrant application set.  
Note that device reliability is affected if it is used under temperature thermal shutdown operates.  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
3/25  
BD783xxEFJ-M Series (Including products under development)  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Operating Supply Voltage  
Operating Temperature  
Load Resistance  
VDD  
Topr  
RL  
4.0  
-40  
3.2  
5.0  
+25  
8.0  
5.5  
+105  
38.4  
V
°C  
Ω
Caution: Operating supply voltage and operating temperature are the ranges in which the IC is available for basic operation.  
(Basic operation means that the IC operates without emitting unexpected noise or stopping signal.)  
Characteristics and rating are not warranted in the whole operating supply voltage and operating temperature.  
Electrical Characteristics 1  
(Unless otherwise specified Ta = -40 °C to +105 °C, VDD = 5.0 V, f = 1 kHz, RL = 8 Ω, BTL(Note 1), Active)  
Limits  
Typ  
2.5  
Parameter  
Quiescent Current  
Symbol  
ICC  
Unit  
mA  
µA  
Conditions  
Min  
-
Max  
6.0  
No load  
Shutdown  
Shutdown Current  
Input Impedance  
ISD  
-
0.1  
25.0  
SDB = Low  
ZIN  
x0.4  
ZIN  
x1.6  
ZIN  
ZIN  
0
kΩ  
Refer to the table below  
OUTP-OUTN  
Output Offset Voltage  
Control Pin (SDB)  
VOFS  
-30  
+30  
mV  
High Level  
Low Level  
VIH  
VIL  
2.0  
0
-
-
VDD  
0.3  
V
V
Input Voltage  
Under Voltage Lock Out (UVLO)  
Detection  
Release  
VUVLO_DET  
VUVLO_REL  
-
-
3.43  
3.58  
3.80  
3.95  
V
V
Threshold Supply  
Voltage  
(Note 1) "BTL" means the state that RL is connected between the OUTP pin (pin5) and the OUTN pin (pin8).  
ZIN[]  
(Typ)  
ZIN[]  
(Typ)  
Part Number  
Part Number  
BD78306EFJ-M  
BD78308EFJ-M  
BD78310EFJ-M  
BD78312EFJ-M  
BD78314EFJ-M  
BD78316EFJ-M  
45  
BD78318EFJ-M  
BD78320EFJ-M  
BD78322EFJ-M  
BD78324EFJ-M  
BD78326EFJ-M  
-
18  
15  
12  
10  
8
40  
35  
30  
25  
20  
-
Electrical Characteristics 2  
(Unless otherwise specified Ta = 25 °C, VDD = 5.0 V, f = 1 kHz, RL = 8 Ω, BTL, Active)  
Limits  
Typ  
Parameter  
Symbol  
Unit  
Conditions  
Min  
0.9  
Max  
1.6  
THD+N = 1 %,  
BW = 400 Hz to 30 kHz  
Continuous output time  
60 s  
Rated Output Power(Note 2)  
PO  
1.2  
W
THD+N = 10 %,  
BW = 400 Hz to 30 kHz  
Continuous output time  
90 s  
Maximum Output Power  
POMAX  
-
1.6  
-
W
PO = 1 W  
BW = 400 Hz to 30 kHz  
PO = 0.5 W  
GV = 6 dB to 26 dB  
Vin = 0.1 VRMS  
BW = 400 Hz to 30 kHz  
Vripple = 0.2 VP-P, C1 = 0.47 µF  
BW = A-Weight  
C1 = 0.47 µF  
BW = A-Weight  
Total Harmonic Distortion + Noise  
Voltage Gain(Note 2)  
THD+N  
GV  
-
-
0.5  
GV + 1  
-80  
%
dB  
GV - 1  
GV  
-90  
-60  
-
Shutdown Attenuation  
ATTSD  
PSRR  
VNO  
-
-
-
dB  
Power Supply Rejection Ratio  
Output Noise Voltage  
-40  
dB  
100  
µVRMS  
(Note 2) The typical performance of device is shown Output Power and Voltage Gain. It largely depends on the board layout, parts, and power supply. The typical  
values are measured with the device and parts mounting on surface of ROHM’s board directly and soldering thermal pad backside of package to top  
layer cupper pattern of the board.  
This IC is applicable to only dynamic speaker, not to other loads.  
www.rohm.com  
TSZ02201-0C1C0EC00760-1-2  
© 2019 ROHM Co., Ltd. All rights reserved.  
4/25  
TSZ22111 • 15 • 001  
19.Jul.2019 Rev.001  
BD783xxEFJ-M Series (Including products under development)  
Typical Performance Curves  
2.0  
4.0  
RL = 8 Ω  
SDB = 0 V  
RL = No Load  
1.5  
1.0  
0.5  
0.0  
3.0  
2.0  
1.0  
0.0  
VUVLO_DET  
VUVLO_REL  
0
1
2
3
4
5
6
7
3
4
5
6
7
Supply Voltage : VDD [V]  
Supply Voltage : VDD [V]  
Figure 3. Quiescent Current vs Supply Voltage  
Figure 4. Shutdown Current vs Supply Voltage  
BD78326EFJ-M  
BD78306EFJ-M  
10  
10  
VDD = 5 V  
RL = 8 Ω  
1
1
0.1  
0.01  
0.1  
VDD = 5 V  
RL = 8 Ω  
0.01  
f = 100 Hz (30 kHz LPF)  
f = 100 Hz (30 kHz LPF)  
f = 1 kHz (BW = 400 Hz to 30 kHz)  
f = 10 kHz (BW = 400 Hz to 80 kHz)  
f = 1 kHz (BW = 400 Hz to 30 kHz)  
f = 10 kHz (BW = 400 Hz to 80 kHz)  
0.001  
0.001  
0.001  
0.001  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
Output Power : PO [W]  
Output Power : PO [W]  
Figure 5. Total Harmonic Distortion + Noise vs Output Power  
Figure 6. Total Harmonic Distortion + Noise vs Output Power  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
5/25  
BD783xxEFJ-M Series (Including products under development)  
Typical Performance Curves – continued  
10  
10  
BD78326EFJ-M  
VDD = 5 V  
VDD = 5 V  
PO = 1 W  
RL = 8 Ω  
f = 1 kHz  
RL = 8 Ω  
BW = 400 Hz to 30 kHz  
80 kHz LPF  
1
0.1  
BD78326EFJ-M  
1
BD78306EFJ-M  
0.1  
0.01  
0.001  
BD78306EFJ-M  
0.01  
10  
100  
1k  
Frequency [Hz]  
10k  
100k  
0.001  
0.01  
0.1  
1
10  
Output Power : PO [W]  
Figure 7. Total Harmonic Distortion + Noise vs Output Power  
Figure 8. Total Harmonic Distortion + Noise vs Frequency  
32  
2.0  
VDD = 5 V  
RL = 8 Ω  
PO = 0.5 W  
BD78326EFJ-M  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
THD+N = 1 %  
1.8  
THD+N = 10 %  
1.6  
1.4  
1.2  
1.0  
RL = 8 Ω  
f = 1 kHz  
6
0.8  
4
BD78306EFJ-M  
2
0.6  
10  
100  
1k  
Frequency [Hz]  
10k  
100k  
4.0  
4.5  
5.0  
5.5  
Supply Voltage : VDD [V]  
Figure 9. Voltage Gain vs Frequency  
Figure 10. Output Power vs Supply Voltage  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
6/25  
BD783xxEFJ-M Series (Including products under development)  
Typical Performance Curves - continued  
4.0  
3.0  
2.0  
1.0  
0.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VDD = 5 V  
f = 1 kHz  
THD+N = 1 %  
THD+N = 10 %  
VDD = 5 V  
RL = 8 Ω  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
Output Power : PO [W]  
0
8
16  
24  
32  
Load Resistor : RL [Ω]  
Figure 11. Power Dissipation vs Output Power  
Figure 12. Output Power vs Load Resistor  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
0
VDD = 5 V  
RL = 8 Ω  
Vripple = 0.2 VP-P  
VDD = 5 V  
RL = 8 Ω  
Vin = 0.1 VRMS  
SDB = 0 V  
30 kHz LPF  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
BD78326EFJ-M  
BD78306EFJ-M  
10  
100  
1k  
Frequency [Hz]  
10k  
100k  
10  
100  
1k  
10k  
100k  
Frequency [Hz]  
Figure 14. Power Supply Rejection Ratio vs Frequency  
Figure 13. Shutdown Attenuation vs Frequency  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
7/25  
BD783xxEFJ-M Series (Including products under development)  
Timing Chart  
Power on/power down sequences of the VDD pin and the SDB pin are shown.  
Follow the sequences below when power on and power down.  
1. Power on sequence  
(1) Start up voltage of the VDD pin and the SDB pin in order  
V
(1) Start up the VDD pin voltage to 4 V or more.  
VDD  
t
V
(2) Start up the SDB pin voltage from VIL to VIH  
VIH  
.
SDB  
2.0 V  
0.3 V  
t
t1  
t2  
VIL  
t2-t1200 μs  
V
BIAS  
VDD/2  
VDD/2 × 90 %  
t
t3  
(Maximum Turn On Time) = t3-t2 = 540 ms  
C1 = 0.47 μF  
V
t4-t30 s  
INP  
VDD/2  
Start input signal  
t
t4  
V
OUTP  
VDD/2  
t
V
OUTN  
VDD/2  
t
t
V
BTL  
(OUTP-OUTN)  
Figure 15. Power On Sequence  
Caution:  
Start to input signal after waiting maximum Turn On Time 540 ms (C1 = 0.47 μF) after setting the SDB pin voltage high.  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
8/25  
BD783xxEFJ-M Series (Including products under development)  
Timing Chart – continued  
(2) Start up voltage of the VDD pin and the SDB pin simultaneously  
V
Start up the VDD pin and the SDB pin voltage simultaneously from 0.8 V or less to 4.0 V or more.  
VDD,SDB  
4.0 V  
0.8 V  
t
t
t0  
t1  
200 μst1-t01 s  
V
t1-t0  
t2-t0  
BIAS  
200 µs  
200 ms 600 ms (Max)  
1 s 1.35 s (Max)  
540 ms (Max)  
Turn On Time t2-t0 depends on time period t1-t0 in which  
the VDD pin and the SDB pin voltage are started up.  
VDD/2  
VDD/2 × 90 %  
t2  
(Turn On Time= t2-t0  
C1 = 0.47 μF  
V
INP  
t3-t20 s  
Start input signal  
VDD/2  
t
t
t3  
V
V
V
OUTP  
VDD/2  
When the VDD pin and the SDB pin voltage are started up simultaneously,  
Under Voltage Lock Out is released at VDD = 3.95 V (Max) and outputs are started up.  
OUTN  
VDD/2  
t
t
BTL  
(OUTP-  
OUTN)  
Caution:  
Start up waveforms in the figure above, are described in case the VDD pin and the SDB pin voltage are started up  
from 0 V to 5 V in time period of 300 ms as an example.  
Figure 16. Power On Sequence  
1400  
1200  
1000  
800  
600  
400  
200  
0
0
200 400 600 800 1000  
t1 - t0 [ms]  
Figure 17. Turn On Time t2 – t0 (Max) vs t1 - t0  
Caution:  
Start to input signal after waiting maximum Turn On Time after setting the VDD pin and the SDB pin voltage high.  
Turn On Time depends on time period in which the VDD pin and the SDB pin voltage are started up.  
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Timing Chart – continued  
2. Power down sequence  
(1) Turn down voltage of the SDB pin and the VDD pin in order  
V
(2)Turn down the VDD pin voltage.  
VDD  
t
t5  
V
(1)Turn down the SDB pin voltage to VIL after input signal is stopped.  
VIH  
SDB  
t5-t40 s  
2.0 V  
0.3 V  
t
t1  
t2 t3  
VIL  
V
t3-t2200 μs  
BIAS  
VDD/2  
VDD/2 × 10 %  
t
t
t4  
t1-t00 s  
(Maximum Turn Off Time) = t4-t3 = 660 ms  
V
C1 = 0.47 μF  
INP  
Stop input signal  
VDD/2  
t0  
V
OUTP  
VDD/2  
t
V
OUTN  
VDD/2  
t
t
V
BTL  
(OUTP-OUTN)  
Figure 18. Power Down Sequence  
Caution:  
Turn down the VDD pin voltage after waiting maximum Turn Off Time 660 ms (C1 = 0.47 μF) after setting the SDB pin  
voltage low. Output waveform may be clipped if signal is still input after Turn Off starts.  
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Timing Chart – continued  
(2) Turn down voltage of the VDD pin and the SDB pin simultaneously  
VDD, SDB  
Turn down the VDD pin and the SDB pin voltage simultaneously to 0.8 V or less.  
Caution : Unless the VDD pin and the SDB pin voltage are turned down 0.8 V or less,  
the state Over Current Protection is started may not be released.  
4.0 V  
0.8 V  
t
t1 t2  
t3  
200 μst3-t260 s  
BIAS  
VDD/2  
t
t
t1-t00 s  
INP  
Stop input signal  
VDD/2  
t0  
OUTP  
VDD/2  
t
When the VDD pin and the SDB pin voltage are turned down  
simultaneously, Under Voltage Lock Out starts at VDD = 3.80 V  
(Max) and outputs are pulled down by 10 kΩ.  
OUTN  
VDD/2  
t
t
BTL  
(OUTP-OUTN)  
Caution:  
Turn down waveforms in the figure above, are described in case the VDD pin and the SDB pin voltage are turned down  
from 5 V to 0 V in time period of 300 ms as an example.  
Figure 19. Power Down Sequence  
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Application Examples  
VDD  
C4  
10 µ  
6
VDD  
C2  
0.47 µ  
OUTP  
5
Input  
INP  
3
Signal  
C3  
0.47 µF  
OUTN  
8
INN  
4
2
Over Current  
Protection  
Thermal  
Shutdown  
BIAS  
C1  
0.47 µF  
Bias  
SDB  
1
Under Voltage  
Lock Out  
GND  
7
From  
System Control  
Figure 20. Single-ended Input  
VDD  
C4  
10 µ  
6
VDD  
C2  
0.47 µ  
OUTP  
5
Input  
INP  
3
Signal  
C3  
0.47 µF  
OUTN  
8
Input  
Signal  
INN  
4
2
Over Current  
Protection  
Thermal  
Shutdown  
BIAS  
C1  
0.47 µF  
Bias  
Under Voltage  
Lock Out  
SDB  
1
GND  
7
From  
System Control  
Figure 21. Differential Input  
Parts  
Capacitor  
Parts Symbol  
C1, C2, C3  
C4  
Value  
0.47 µF  
10 µF  
Manufacturer  
MURATA  
MURATA  
Product No.  
GCM188R71E474KA64  
GRT188C81C106ME13  
(This is only example of components externally connected.)  
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BD783xxEFJ-M Series (Including products under development)  
Selection of Components Externally Connected  
1. Input Coupling Capacitors (C2, C3)  
The frequency characteristic of input composes high pass filter (Figure 22. HPF) by input impedance ZIN and input  
coupling capacitor C2, C3 (= CIN).  
Cut off frequency fC is determined in following equation, set CIN considering it.  
1
푓 =  
[Hz]  
2휋×푍 ×퐶  
퐼푁  
퐼푁  
In case that ZIN = 45 kΩ and CIN = 0.47 µF, fC is 7.5 Hz (Typ).  
GV  
GV -3 dB  
fC  
Figure 22. HPF  
The capacitance of C2 and C3 should be the same at the INP and INN pins.  
If the capacitance is different, audio characteristics such as THD+N may get worse and pop noise may be large.  
2. Power Supply Decoupling Capacitor (C4)  
Power supply decoupling capacitor influences audio characteristics such as THD+N. Locate low ESR capacitor close  
to the VDD pin.  
Capacitance of C4 should be 10 µF or more.  
3. The BIAS pin Capacitor (C1)  
The BIAS pin capacitor influences audio characteristic such as PSRR and THD+N. Locate low ESR capacitor close to  
the BIAS pin.  
Determine capacitance of C1 included in the range below, including variation and temperature characteristic also.  
Turn On Time and Turn Off Time are also determined by capacitance of the BIAS pin capacitor.  
Refer to the following section "Turn On and Turn Off".  
Capacitance  
Min  
Typ  
Max  
C1  
0.35 µF  
0.47 µF  
0.59 µF  
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Turn On and Turn Off  
This IC has built-in circuit controls transition time of the OUTP pin and the OUTN pin when the operation mode is switched  
between active (SDB = High) and shutdown (SDB = Low). It achieves reducing pop noise.  
SDB  
5 V/div  
SDB  
5 V/div  
OUTP  
1 V/div  
OUTN  
1 V/div  
OUTP  
1 V/div  
OUTN  
1 V/div  
OUTP - OUTN  
5 V/div  
OUTP - OUTN  
5 V/div  
Turn Off Time  
Turn On Time  
Figure 23. Turn On Waveform  
Figure 24. Turn Off Waveform  
Following table shows Turn On Time and Turn Off Time with C1 = 0.47 µF.  
C1  
Turn On Time  
Turn Off Time  
270 ms (Typ)  
540 ms (Max)  
330 ms (Typ)  
660 ms (Max)  
0.47 µF  
Turn On Time is defined as the time until the BIAS pin voltage rises to 90 % of VDD/2 after the SDB pin voltage is Low to  
High.  
Turn Off Time is defined as the time until the BIAS pin voltage falls to 10 % of VDD/2 after the SDB pin voltage is High to Low.  
Turn On Time and Turn Off Time may vary from typical value as the table above.  
Maximum value above is calculated assuming that variation of resistors in IC: ±60 % (-40 °C to +105 °C), accuracy of C1:  
±25 % (including variation and temperature characteristic).  
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Protection Functions  
This IC has protection functions that detect several kinds of abnormal conditions and protect itself.  
Protection  
Functions  
Detection and Release Condition  
State of Output Pins  
Signal Output stopped  
and  
Latched to High-Z  
The OUTP pin or the OUTN pin is shorted to the  
VDD pin / the GND pin.  
Detection  
Release  
Detection  
Release  
Detection  
Release  
Over Current  
Protection  
Over Current Protection is released after setting  
SDB to Low and waiting Turn Off Time.  
After that, the IC becomes normal operation state  
by setting the SDB pin to High.  
Signal Output available  
Signal Output stopped  
and  
Pulled down by 10 kΩ  
(Typ)  
Tj : 180 °C (Typ) or more  
Thermal Shutdown  
Tj : 160 °C (Typ) or less  
(released automatically)  
Signal Output available  
Signal Output stopped  
VDD : 3.43 V (Typ) / 3.80 V (Max) or less  
Ta = -40 °C to +105 °C  
and  
Pulled down by 10 kΩ  
(Typ)  
Under Voltage  
Lock Out  
VDD : 3.58 V (Typ) / 3.95 V (Max) or more  
Ta = -40 °C to +105 °C  
Signal Output available  
(released automatically)  
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Protection Functions - continued  
1. Over Current Protection  
(1) Over Current Protection (Short to the VDD pin)  
In case that the OUTP pin or the OUTN pin is shorted to the VDD pin, Over Current Protection starts to stop output  
signal and latch output pins to High-Z.  
Once Over Current Protection is started, the latch state is not released automatically even if the OUTP pin and the  
OUTN pin are not shorted to the VDD pin. Over Current Protection is released by shutdown.  
Detection  
Release  
The OUTP pin or the OUTN pin is shorted to the VDD pin.  
Over Current Protection is released after setting the SDB pin to Low and waiting Turn Off Time  
(660 ms Max).  
After that, it is possible that the IC outputs signal by setting the SDB pin to High.  
The OUTP pin and the OUTN pin are not  
The OUTP pin or the OUTN pin  
shorted to the VDD pin  
The voltage of the OUTP pin and the OUTN pin returns to bias  
is shorted to the VDD pin  
V
voltage (VDD/2),but signal output is still stopped.  
OUTP  
VDD/2  
t
Signal Output is stopped  
Over Current Protection  
is released  
(Over Current Protection)  
V
OUTN  
VDD/2  
t
t
Signal Output is stopped  
(Over Current Protection)  
Over Current Protection  
is released  
V
BTL  
(OUTP-OUTN)  
Signal Output is stopped  
(Over Current Protection)  
Set the SDB pin to Low  
V
SDB  
After Over Current Protection is  
released, the IC becomes  
active by setting the SDB pin to  
High again.  
VIL=0.3 V (Max)  
t
V
BIAS  
VDD/2  
VDD/2 × 10 %  
t
660 ms (Max)  
Figure 25. Over Current Protection (Short to the VDD pin)  
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Protection Functions – continued  
(2) Over Current Protection (Short to the GND pin)  
In case that the OUTP pin or the OUTN pin is shorted to the GND pin, Over Current Protection starts to stop output  
signal and latch output pins to High-Z.  
Once Over Current Protection is started, the latch state is not released automatically even if the OUTP pin and the  
OUTN pin are not shorted to the GND pin, Over Current Protection is released by shutdown.  
Detection  
Release  
The OUTP pin or the OUTN pin is shorted to the GND pin  
Over Current Protection is released after setting the SDB pin to Low and waiting Turn Off Time  
(660 ms Max).  
After that, it is possible that the IC outputs signal by setting the SDB pin to High.  
The OUTP pin and the OUTN pin are not  
shorted to the GND pin  
The OUTP pin or the OUTN pin is  
shorted to the GND pin  
V
The voltage of the OUTP pin and the OUTN pin returns to bias  
voltage (VDD/2),but signal output is still stopped.  
OUTP  
VDD/2  
t
Signal Output is stopped  
(Over Current Protection)  
Over Current Protection  
is released  
V
OUTN  
VDD/2  
t
Signal Output is stopped  
(Over Current Protection)  
Over Current Protection  
is released  
V
BTL  
(OUTP-OUTN)  
t
Signal Output is stopped  
(Over Current Protection)  
Set the SDB pin to Low  
V
SDB  
After Over Current Protection is  
released, the IC becomes  
active by setting the SDB pin to  
High again.  
VIL=0.3 V (Max)  
t
V
BIAS  
VDD/2  
VDD/2 × 10 %  
t
660 ms (Max)  
Figure 26. Over Current Protection (Short to the GND pin)  
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Protection Functions – continued  
2. Thermal Shutdown  
In case that Tj rises to 180 °C (Typ) or more, Thermal Shutdown starts to stop output signal and pulls down output pins  
by 10 kΩ (Typ).  
Detection  
Release  
Tj : 180 °C (Typ) or more  
Tj : 160 °C (Typ) or less  
(released automatically)  
˚C  
180 °C (Typ)  
Tj  
160 °C (Typ)  
t
V
SDB  
t
V
OUTP  
VDD/2  
Signal Output is stopped  
t
V
OUTN  
VDD/2  
Signal Output is stopped  
t
t
V
BTL  
(OUTP-OUTN)  
Signal Output is stopped  
Figure 27. Thermal Shutdown  
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Protection Functions – continued  
3. Under Voltage Lock Out  
In case that VDD drops to 3.43 V (Typ) or less, Under Voltage Lock Out starts to stop output signal and pulls down  
output pins by 10 kΩ (Typ).  
Detection  
Release  
VDD : 3.43 V (Typ) / 3.80 V (Max) or less  
VDD : 3.58 V (Typ) / 3.95 V (Max) or more  
(released automatically)  
V
VDD  
3.58 V (Typ)  
3.43 V (Typ)  
t
t
t
V
SDB  
V
OUTP  
VDD/2  
Signal Output is stopped  
V
OUTN  
VDD/2  
Signal Output is stopped  
t
t
V
BTL  
(OUTP-OUTN)  
Signal Output is stopped  
Figure 28. Under Voltage Lock Out  
Caution:  
In case that the voltage of VDD falls to 3.80 V (Max) or less by fluctuation of the power supply voltage, note that Under Voltage  
Lock Out may start.  
Under the condition that RL = 6 Ω, depending on output signal level, back electromotive force may occur because of the fluctuation  
of load current when Under Voltage Lock Out starts and parasitic inductance inside the IC.  
Similarly, IR voltage drop may occur because of load current and parasitic resistance of the VDD pin.  
These back electromotive force or IR voltage drop may cause intermittent action between “Detection” and “Release”.  
This action may be heard as noise under the condition the voltage of the VDD pin is near the threshold voltage of detection.  
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I/O Equivalence Circuits  
Pin  
No.  
Pin  
Name  
Pin  
Voltage  
Equivalent Circuit  
Pin Description  
VDD  
Shutdown  
High : Active  
Low : Shutdown  
SDB  
GND  
1
SDB  
-
VDD  
BIAS  
2
BIAS  
2.5 V  
Bias  
GND  
VDD  
3
4
INP  
INN  
Positive Differential Input  
Negative Differential Input  
INP  
INN  
2.5 V  
GND  
VDD  
5
8
OUTP  
OUTN  
Positive Output  
Negative Output  
OUTP  
OUTN  
2.5 V  
GND  
6
7
VDD  
GND  
5 V  
0 V  
Power Supply  
VDD  
GND  
GND  
Pin voltage is the value when VDD is 5.0 V and the operating mode is active (The SDB pin is High).  
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Operational Notes  
1.  
2.  
Reverse Connection of Power Supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply  
pins.  
Power Supply Lines  
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at  
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic  
capacitors.  
3.  
4.  
Ground Voltage  
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.  
Ground Wiring Pattern  
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations  
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.  
5.  
6.  
Recommended Operating Conditions  
The function and operation of the IC are guaranteed within the range specified by the recommended operating  
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical  
characteristics.  
Inrush Current  
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow  
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.  
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing  
of connections.  
7.  
Testing on Application Boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject  
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should  
always be turned off completely before connecting or removing it from the test setup during the inspection process. To  
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and  
storage.  
8.  
9.  
Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in  
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and  
unintentional solder bridge deposited in between pins during assembly to name a few.  
Unused Input Pins  
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge  
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause  
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power  
supply or ground line.  
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Operational Notes – continued  
10. Regarding the Input Pin of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them  
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a  
parasitic diode or transistor. For example (refer to figure below):  
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to  
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be  
avoided.  
Figure 29. Example of Monolithic IC Structure  
11. Ceramic Capacitor  
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with  
temperature and the decrease in nominal capacitance due to DC bias and others.  
12. Thermal Shutdown Circuit (TSD)  
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always  
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the  
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj  
falls below the TSD threshold, the circuits are automatically restored to normal operation.  
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no  
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat  
damage.  
13. Over Current Protection Circuit (OCP)  
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This  
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should  
not be used in applications characterized by continuous operation or transitioning of the protection circuit.  
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Ordering Information  
B D 7 8 3  
x
x
E
F
J -  
ME 2  
Part Number  
Voltage  
Gain  
Package  
EFJ: HTSOP-J8  
Product Rank  
M: for Automotive  
06: 6 dB  
08: 8 dB  
Packaging and forming specification  
E2: Embossed tape and reel  
10: 10 dB  
12: 12 dB  
14: 14 dB  
16: 16 dB  
18: 18 dB  
20: 20 dB  
22: 22 dB  
24: 24 dB  
26: 26 dB  
Lineup  
Part Number  
Voltage Gain  
Part Number Marking  
78306  
Production Status  
Mass Production  
Under Development  
Mass Production  
Under Development  
Under Development  
Under Development  
Under Development  
Under Development  
Under Development  
Under Development  
Mass Production  
BD78306EFJ-M  
BD78308EFJ-M  
BD78310EFJ-M  
BD78312EFJ-M  
BD78314EFJ-M  
BD78316EFJ-M  
BD78318EFJ-M  
BD78320EFJ-M  
BD78322EFJ-M  
BD78324EFJ-M  
BD78326EFJ-M  
6 dB  
8 dB  
78308  
78310  
78312  
78314  
78316  
78318  
78320  
78322  
10 dB  
12 dB  
14 dB  
16 dB  
18 dB  
20 dB  
22 dB  
24 dB  
26 dB  
78324  
78326  
Marking Diagram  
HTSOP-J8(TOP VIEW)  
Part Number Marking  
LOT Number  
Pin 1 Mark  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
23/25  
BD783xxEFJ-M Series (Including products under development)  
Physical Dimension and Packing Information  
Package Name  
HTSOP-J8  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
24/25  
BD783xxEFJ-M Series (Including products under development)  
Revision History  
Date  
Revision  
001  
Changes  
19.Jul.2019  
New Release  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0C1C0EC00760-1-2  
19.Jul.2019 Rev.001  
25/25  
Notice  
Precaution on using ROHM Products  
(Note 1)  
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment  
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,  
bodily injury or serious damage to property (Specific Applications), please consult with the ROHM sales  
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any  
ROHMs Products for Specific Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.  
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the  
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our  
Products under any special or extraordinary environments or conditions (as exemplified below), your independent  
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.  
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble  
cleaning agents for cleaning residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PAA-E  
Rev.004  
© 2015 ROHM Co., Ltd. All rights reserved.  
Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
A two-dimensional barcode printed on ROHM Products label is for ROHMs internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign  
trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
Products with other articles such as components, circuits, systems or external equipment (including software).  
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice-PAA-E  
Rev.004  
© 2015 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
General Precaution  
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.  
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this document is current as of the issuing date and subject to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales  
representative.  
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  
配单直通车
BD78326EFJ-ME2产品参数
型号:BD78326EFJ-ME2
是否Rohs认证: 符合
生命周期:Active
包装说明:VSOP,
Reach Compliance Code:compliant
风险等级:5.68
商用集成电路类型:AUDIO AMPLIFIER
JESD-30 代码:R-PDSO-G8
长度:4.9 mm
信道数量:1
功能数量:1
端子数量:8
最高工作温度:105 °C
最低工作温度:-40 °C
标称输出功率:1.2 W
封装主体材料:PLASTIC/EPOXY
封装代码:VSOP
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED
筛选级别:AEC-Q100
座面最大高度:1 mm
最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4 V
表面贴装:YES
温度等级:INDUSTRIAL
端子形式:GULL WING
端子节距:1.27 mm
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm
Base Number Matches:1
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