BD7911FV-E原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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by BD791/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

. . . designed for low power audio amplifier and low–current, high speed switching

applications.

4 AMPERE

POWER TRANSISTOR

SILICON

•

High Collector–Emitter Sustaining Voltage —

= 100 Vdc (Min)

V

CEO(sus)

High DC Current Gain @ I = 200 mAdc

C

100 VOLTS

15 WATTS

h

= 40–250

FE

Low Collector–Emitter Saturation Voltage —

= 0.5 Vdc (Max) @ I = 500 mAdc

V

CE(sat)

High Current Gain — Bandwidth Product —

= 40 MHz (Min) @ I = 100 mAdc)

C

f

T

C

*MAXIMUM RATINGS

Rating

Symbol

Max

100

6.0

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V

CEO

V

CB

V

EBO

CASE 77–09

TO–225AA TYPE

Collector Current — Continuous

— Peak

I

C

4.0

8.0

Base Current

I

B

1.0

Adc

Total Power Dissipation @ T = 25 C

C

Derate above 25 C

P

D

15

0.12

Watts

W/ C

Operating and Storage Junction

Temperature Range

T ,T

J stg

–65 to +150

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

8.34

C/W

θJC

16

12

1.6

1.2

0.8

0.4

0

8.0

4.0

0

20

40

60

80

100

120

140

160

T, TEMPERATURE (

°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁸r Power Transistor Device Data

1

*ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

C

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I = 10 mAdc, I = 0)

V

Vdc

CEO(sus)

100

—

C

B

Collector Cutoff Current

(V = 50 Vdc, I = 0)

I

µAdc

CEO

100

CE

B

Collector Cutoff Current

I

CEX

(V

CE

(V

CE

= 100 Vdc, V

= 1.5 Vdc)

—

1.0

0.1

µAdc

mAdc

BE(off)

= 1.5 Vdc, T = 125 C)

= 50 Vdc, V

BE(off)

C

Emitter Cutoff Current (V

= 6.0 Vdc, I = 0)

I

—

1.0

µAdc

EB

C

EBO

ON CHARACTERISTICS (1)

DC Current Gain

h

FE

—

(I = 200 mAdc, V

= 3 0 Vdc)

40

20

10

5.0

250

—

C

CE

= 3.0 Vdc)

(I = 1.0 Adc, V

C

CE

(I = 2.0 Adc, V

= 3.0 Vdc)

C

(I = 4.0 Adc, V

C

—

Collector Emitter Saturation Voltage

(I = 500 mAdc, I = 50 mAdc)

V

Vdc

CE(sat)

—

0.5

1.0

2.5

3.0

C

B

(I = 1.0 Adc, I = 100 mAdc)

C

B

(I = 2.0 Adc, I = 200 mAdc)

(I = 4.0 Adc, I = 800 mAdc)

C

Base–Emitter Saturation Voltage (I = 2.0 Adc, I = 200 mAdc)

V

—

1.8

1.5

Vdc

C

B

BE(sat)

Base–Emitter On Voltage (I = 200 mAdc, V

C

= 3.0 Vdc)

V

BE(on)

CE

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

f

40

—

MHz

pF

T

(I = 100 mAdc, V

C

= 10 Vdc, f = 10 MHz)

CE

Output Capacitance

C

ob

(V

CB

= 10 Vdc, I = 0, f = 0.1 MHz)

C

—

50

—

Small–Signal Current Gain

(I = 200 mAdc, V = 10 Vdc, f = 1.0 kHz)

h

10

—

fe

C

CE

* Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width 300 µs, Duty Cycle

2.0%.

500

+ 30 V

V

CC

300

200

T

V

= 25°C

J

25 µs

R

= 30 V

C

CC

/I = 10

+ 11 V

0

I

C B

SCOPE

100

R

B

70

50

– 9.0 V

t , t 10 ns

51

D

1

t

r

30

20

r

f

DUTY CYCLE = 1.0%

t

@ V

= 5.0 V

– 4 V

d

BE(off)

R

AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS

B

C

10

D

MUST BE FAST RECOVERY TYPE, eg

1

7.0

MBR340 USED ABOVE I

100 mA

B

5.0

0.04

MSD6100 USED BELOW I

0.06 0.1

0.2

0.4 0.6

1.0

2.0

4.0

B

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

I

, COLLECTOR CURRENT (AMP)

C

Figure 2. Switching Time Test Circuit

Figure 3. Turn–On Time

2

Motorola Bipolar Power Transistor Device Data

1.0

0.7

0.5

D = 0.5

0.2

0.3

0.2

0.1

0.05

P

(pk)

0.1

0.07

0.05

R

= r(t) R

θ

JC(t)

= 8.34

JC

C/W MAX

°

JC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

0.02

0.01

t

1

0.03

0.02

t

2

1

(pk)

0 (SINGLE PULSE)

T

– T = P

R

J(pk)

C

θ

JC(t)

100

DUTY CYCLE, D = t /t

1 2

0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

t, TIME (ms)

5.0

10

20

50

200

Figure 4. Thermal Response

10

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

100

500

µs

5.0

1.0 ms

µs

2.0

down. Safe operating area curves indicate I – V

limits of

C

CE

dc

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

1.0

0.5

T

= 150°C

J

5.0 ms

BONDING WIRE LIMITED

THERMALLY LIMITED @ T = 25°C

C

(SINGLE PULSE)

The data of Figure 5 is based on T

= 150 C: T is

C

J(pk)

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T

0.1

0.05

J(pk)

may be calculated from the data in Fig-

SECOND BREAKDOWN LIMITED

150 C, T

J(pk)

CURVES APPLY BELOW RATED V

CEO

ure 4. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.02

0.01

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

V

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

CE

Figure 5. Active Region Safe Operating Area

2000

1000

200

T

= 25°C

T

= 25°C

J

V

I

= 30 V

/I = 10

CC

100

700

500

C B

B1 B2

C

ib

I

= I

t

s

70

50

300

200

100

70

50

C

30

20

ob

t

f

30

20

10

1.0

2.0

3.0

5.0 7.0

10 20

30

50 70 100

0.04 0.06

0.1

0.2

0.4

0.6

1.0

2.0

4.0

V

, REVERSE VOLTAGE (VOLTS)

R

I

, COLLECTOR CURRENT (AMP)

C

Figure 7. Capacitance

Figure 6. Turn–Off Time

3

Motorola Bipolar Power Transistor Device Data

500

1.4

1.2

T

= 25°C

J

V

= 1.0 V

= 3.0 V

T

= 150°C

300

200

CE

J

1.0

0.8

0.6

0.4

0.2

0

25°C

100

V

BE(sat)

@ I /I = 10

C B

70

50

–55°C

V

@ V

= 3.0 V

BE(on)

CE

30

20

I

/I = 10

C B

5.0

V

CE(sat)

7.0

5.0

0.04 0.06

0.04 0.06 0.1

0.2

0.4 0.6

1.0

2.0

4.0

0.1

0.2

0.4 0.6

1.0

2.0

4.0

I

, COLLECTOR CURRENT (AMP)

I

, COLLECTOR CURRENT (AMP)

C

Figure 9. “On” Voltage

Figure 8. DC Current Gain

+2.5

*APPLIES FOR I /I

C B

≤ h

FE/3

+2.0

+1.5

+1.0

+0.5

0

25

°

C to 150

°C

*θ

FOR V

VC CE(sat)

– 55

°C to 25

°C

–0.5

–1.0

–1.5

25°C to 150°C

θ

FOR V

0.1

VB

BE

–2.0

–2.5

– 55°C to 25°C

0.04 0.06

0.2

0.4 0.6

1.0

2.0

4.0

I

, COLLECTOR CURRENT (AMP)

C

Figure 10. Temperature Coefficient

4

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

–B–

NOTES:

F

C

U

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Q

M

INCHES

MILLIMETERS

–A–

DIM

A

B

C

D

F

MIN

MAX

0.435

0.305

0.105

0.026

0.130

MIN

10.80

7.50

2.42

0.51

2.93

MAX

11.04

7.74

2.66

0.66

3.30

1

2

3

0.425

0.295

0.095

0.020

0.115

H

K

G

H

J

K

M

Q

R

S

0.094 BSC

2.39 BSC

0.050

0.015

0.575

5

0.095

0.025

0.655

1.27

0.39

14.61

5

2.41

0.63

16.63

TYP

J

V

G

0.148

0.045

0.025

0.145

0.040

0.158

0.065

0.035

0.155

–––

3.76

1.15

0.64

3.69

1.02

4.01

1.65

0.88

3.93

–––

R

M

0.25 (0.010)

A

B

S

U

V

D 2 PL

M

0.25 (0.010)

A

B

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

CASE 77–09

TO–225AA TYPE

ISSUE W

5

Motorola Bipolar Power Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

Mfax is a trademark of Motorola, Inc.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141,

P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488

Customer Focus Center: 1–800–521–6274

Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

Motorola Fax Back System

– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

– http://sps.motorola.com/mfax/

HOME PAGE: http://motorola.com/sps/

6

Motorola Bipolar Power Transistor Device Data

BD791/D

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. . . designed for low power audio amplifier and low–current

switching applications.

Features:

• High Collector–Emitter Sustaining Voltage —

V

= 100 Vdc (Min)

CEO(sus)

• High DC Current Gain @ I = 200 mAdc

C

h

= 40–250

FE

• Low Collector–Emitter Saturation Voltage —

= 0.5 Vdc (Max) @ I = 500 mAdc

V

CE(sat)

C

• High Current Gain — Bandwidth Product —

f = 40 MHz (Min) @ I = 100 mAdc)

T

C

Orderable Parts

Orderable Short Package Pin Case

Action

StatusPrice

Part

Desc. Desc.

Count Outline

N/A BD791T Zener TO-225 3

Diode

77-09 Active $0.2

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型号:	BD7915FP
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	ROHM CO LTD
零件包装代码：	SOIC
包装说明：	HSOP-25/27
针数：	25
Reach Compliance Code：	compliant
HTS代码：	8542.39.00.01
风险等级：	5.82
商用集成电路类型：	CONSUMER CIRCUIT
JESD-30 代码：	R-PDSO-G27
JESD-609代码：	e3/e2
长度：	13.6 mm
功能数量：	1
端子数量：	27
最高工作温度：	75 °C
最低工作温度：	-25 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	SSOP
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, SHRINK PITCH
峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified
座面最大高度：	2.11 mm
最大供电电压 (Vsup)：	3.3 V
最小供电电压 (Vsup)：	3.3 V
表面贴装：	YES
温度等级：	COMMERCIAL EXTENDED
端子面层：	TIN/TIN COPPER
端子形式：	GULL WING
端子节距：	0.8 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	10
宽度：	5.4 mm

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