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产品型号BD1366STU的Datasheet PDF文件预览

BD136/138/140  
Medium Power Linear and Switching  
Applications  
Complement to BD135, BD137 and BD139 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
: BD136  
: BD138  
: BD140  
- 45  
- 60  
- 80  
V
V
V
CBO  
: BD136  
: BD138  
: BD140  
- 45  
- 60  
- 80  
V
V
V
CEO  
V
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 5  
- 1.5  
V
A
EBO  
I
I
C
- 3.0  
A
CP  
B
I
- 0.5  
A
P
Collector Dissipation (T =25°C)  
12.5  
W
W
°C  
°C  
C
C
P
Collector Dissipation (T =25°C)  
1.25  
C
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD136  
: BD138  
: BD140  
I = - 30mA, I = 0  
- 45  
- 60  
- 80  
V
V
V
C
B
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
V
= - 30V, I = 0  
- 0.1  
- 10  
µA  
µA  
CBO  
EBO  
CB  
E
V
= - 5V, I = 0  
C
EB  
h
h
h
V
V
V
= - 2V, I = - 5mA  
25  
25  
40  
FE1  
FE2  
FE3  
CE  
CE  
CE  
C
= - 2V, I = - 0.5A  
C
= - 2V, I = - 150mA  
250  
- 0.5  
- 1  
C
V
V
(sat)  
(on)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I = - 500mA, I = - 50mA  
V
V
CE  
C
B
V
= - 2V, I = - 0.5A  
BE  
CE  
C
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed  
h
Classificntion  
FE  
Classification  
6
10  
16  
100 ~ 250  
h
40 ~ 100  
63 ~ 160  
FE3  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
-500  
-450  
-400  
-350  
-300  
-250  
-200  
-150  
-100  
-50  
VCE = -2V  
-0  
-1E-3  
-0.01  
-0.1  
-1  
-10  
-10  
-100  
-1000  
IC[A], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Collector-Emitter Saturation Voltage  
-10  
-1.1  
-1.0  
-0.9  
-0.8  
-0.7  
-0.6  
-0.5  
-0.4  
-0.3  
-0.2  
-0.1  
IC MAX. (Pulsed)  
10us  
IC MAX. (Continuous)  
-1  
-0.1  
-0.01  
-1  
-10  
-100  
-1E-3  
-0.01  
-0.1  
-1  
-10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Base-Emitter Voltage  
Figure 4. Safe Operating Area  
20.0  
17.5  
15.0  
12.5  
10.0  
7.5  
5.0  
2.5  
0.0  
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 5. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-126  
8.00 ±0.30  
3.25 ±0.20  
ø3.20 ±0.10  
(1.00)  
(0.50)  
0.75 ±0.10  
1.75 ±0.20  
1.60 ±0.10  
0.75 ±0.10  
#1  
+0.10  
–0.05  
0.50  
2.28TYP  
[2.28±0.20]  
2.28TYP  
[2.28±0.20]  
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
HiSeC™  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
E2CMOS™  
FACT™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench®  
QFET™  
VCX™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
FASTr™  
GTO™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. E  
配单直通车
BD1366STU产品参数
型号:BD1366STU
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Obsolete
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.29.00.95
风险等级:5.34
最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:45 V
配置:SINGLE
最小直流电流增益 (hFE):40
JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3
JESD-609代码:e3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP
最大功率耗散 (Abs):13 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:NO
端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE
端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
标称过渡频率 (fT):75 MHz
Base Number Matches:1
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