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产品型号BD136/D的Datasheet PDF文件预览

ON Semiconductort  
BD136  
BD138  
Plastic Medium Power Silicon  
PNP Transistor  
BD140  
BD140-10  
. . . designed for use as audio amplifiers and drivers utilizing  
complementary or quasi complementary circuits.  
1.5 AMPERE  
POWER TRANSISTORS  
PNP SILICON  
DC Current Gain — h = 40 (Min) @ I = 0.15 Adc  
FE  
C
BD 136, 138, 140 are complementary with BD 135, 137, 139  
45, 60, 80 VOLTS  
10 WATTS  
CASE 77–09  
TO–225AA TYPE  
MAXIMUM RATINGS  
Rating  
Symbol  
Type  
Value  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
V
V
V
BD 136  
BD 138  
BD 140  
45  
60  
80  
Vdc  
CEO  
CBO  
EBO  
BD 136  
BD 138  
BD 140  
45  
60  
100  
Vdc  
Emitter–Base Voltage  
Collector Current  
Base Current  
5
Vdc  
Adc  
Adc  
I
C
1.5  
0.5  
I
B
Total Device Dissipation@ T = 25_C  
P
1.25  
10  
Watts  
A
D
Derate above 25_C  
mW/_C  
Watt  
mW/_C  
_C  
Total Device Dissipation @ T = 25_C  
P
D
12.5  
100  
C
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–55 to +150  
stg  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 9  
BD136/D  
BD136 BD138 BD140 BD140–10  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
10  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
θ
JC  
θ
100  
JA  
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)  
C
Characteristic  
Symbol  
BV  
Type  
Min  
Max  
Unit  
Collector–Emitter Sustaining Voltage*  
Vdc  
CEO  
(I = 0.03 Adc, I = 0)  
C
B
BD 136  
BD 138  
BD 140  
45  
60  
80  
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
µAdc  
CBO  
0.1  
10  
CB  
E
(V = 30 Vdc, I = 0, T = 125 _C)  
CB  
E
C
Emitter Cutoff Current  
I
10  
µAdc  
EBO  
(V = 5.0 Vdc, I = 0)  
BE  
C
DC Current Gain  
(I = 0.005 A, V = 2 V)  
ALL  
C
CE  
h
FE  
*
25  
40  
250  
(I = 0.15 A, V = 2 V)  
ALL  
C
CE  
BD140–10  
63  
25  
160  
(I = 0.5 A, V = 2 V)  
C
CE  
Collector–Emitter Saturation Voltage*  
(I = 0.5 Adc, I = 0.05 Adc)  
V
*
0.5  
Vdc  
Vdc  
CE(sat)  
C
B
Base–Emitter On Voltage*  
(I = 0.5 Adc, V = 2.0 Vdc)  
V
*
1
BE(on)  
C
CE  
*Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0%.  
10  
5.0  
2.0  
1.0  
0.1 ms  
5 ms  
0.5 ms  
T = 125°C  
J
dc  
0.5  
0.2  
0.1  
0.05  
BD136  
BD138  
BD140  
0.02  
0.01  
1
2
5
10  
20  
50  
80  
V
CE  
, COLLECTOR-EMITTER VOLTAGE (VOLTS)  
Figure 1. Active–Region Safe Operating Area  
http://onsemi.com  
2
BD136 BD138 BD140 BD140–10  
PACKAGE DIMENSIONS  
TO–225AA  
CASE 77–09  
ISSUE W  
–B–  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
F
C
U
Q
M
INCHES  
DIM MIN MAX  
MILLIMETERS  
–A–  
MIN  
10.80  
7.50  
2.42  
0.51  
2.93  
MAX  
11.04  
7.74  
2.66  
0.66  
3.30  
1
2 3  
A
B
C
D
F
0.425  
0.295  
0.095  
0.020  
0.115  
0.435  
0.305  
0.105  
0.026  
0.130  
H
K
G
H
J
0.094 BSC  
2.39 BSC  
0.050  
0.015  
0.575  
5
0.095  
0.025  
0.655  
1.27  
0.39  
14.61  
5
2.41  
0.63  
K
M
Q
R
S
U
V
16.63  
TYP  
TYP  
_
_
J
V
G
0.148  
0.045  
0.025  
0.145  
0.040  
0.158  
0.065  
0.035  
0.155  
---  
3.76  
1.15  
0.64  
3.69  
1.02  
4.01  
1.65  
0.88  
3.93  
---  
R
M
M
M
B
0.25 (0.010)  
A
S
D 2 PL  
M
M
M
B
0.25 (0.010)  
A
http://onsemi.com  
3
BD136 BD138 BD140 BD140–10  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
NORTH AMERICA Literature Fulfillment:  
CENTRAL/SOUTH AMERICA:  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)  
Email: ONlit–spanish@hibbertco.com  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –  
then Dial 866–297–9322  
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support  
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)  
Toll Free from Hong Kong & Singapore:  
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
001–800–4422–3781  
EUROPE: LDC for ON Semiconductor – European Support  
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)  
Email: ONlit–german@hibbertco.com  
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)  
Email: ONlit–french@hibbertco.com  
Email: ONlit–asia@hibbertco.com  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Email: r14525@onsemi.com  
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)  
Email: ONlit@hibbertco.com  
ON Semiconductor Website: http://onsemi.com  
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, UK, Ireland  
BD136/D  
配单直通车
BD13610S产品参数
型号:BD13610S
Brand Name:Fairchild Semiconductor
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Transferred
IHS 制造商:FAIRCHILD SEMICONDUCTOR CORP
零件包装代码:TO-126
包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3
制造商包装代码:TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.29.00.95
风险等级:3.4
最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:45 V
配置:SINGLE
最小直流电流增益 (hFE):63
JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3
JESD-609代码:e3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP
最大功率耗散 (Abs):13 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:NO
端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE
端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
标称过渡频率 (fT):75 MHz
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