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产品型号BD235STU的Datasheet PDF文件预览

BD233/235/237  
Medium Power Linear and Switching  
Applications  
Complement to BD 234/236/238 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
: BD233  
: BD235  
: BD237  
45  
60  
100  
V
V
V
CBO  
: BD233  
: BD235  
: BD237  
45  
60  
80  
V
V
V
CEO  
CER  
EBO  
V
V
: BD233  
: BD235  
: BD237  
45  
60  
100  
V
V
V
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
5
V
A
I
I
2
C
6
25  
A
CP  
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD233  
: BD235  
: BD237  
I
= 100mA, I = 0  
45  
60  
80  
V
V
V
C
B
I
Collector Cut-off Current  
: BD233  
CBO  
V
V
V
= 45V, I = 0  
100  
100  
100  
µA  
µA  
µA  
CB  
CB  
CB  
E
: BD235  
: BD237  
= 60V, I = 0  
E
= 100V, I = 0  
E
I
Emitter Cut-off Current  
* DC Current Gain  
V
= 5V, I = 0  
1
mA  
EBO  
EB  
C
h
V
V
= 2V, I = 150mA  
40  
25  
FE  
CE  
CE  
C
= 2V, I = 1A  
C
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= 1A, I = 0.1A  
0.6  
1.3  
V
V
CE  
C
B
V
(on)  
V
V
= 2V, I = 1A  
C
BE  
CE  
CE  
f
Current Gain Bandwidth Product  
= 10V, I = 250mA  
3
MHz  
T
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics  
1000  
100  
10  
10  
VCE = 2V  
IC = 10 IB  
VBE(sat)  
VCE(sat)  
1
0.1  
0.01  
0.1  
1
10  
1
0.01  
0.1  
1
10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
40  
35  
30  
25  
20  
15  
10  
5
10  
IC MAX. (Pulsed)  
10µs  
IC MAX. (Continuous)  
1
0.1  
0
1
10  
100  
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 3. Safe Operating Area  
Figure 4. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Package Demensions  
TO-126  
8.00 ±0.30  
3.25 ±0.20  
ø3.20 ±0.10  
(1.00)  
(0.50)  
0.75 ±0.10  
1.75 ±0.20  
1.60 ±0.10  
0.75 ±0.10  
#1  
+0.10  
–0.05  
0.50  
2.28TYP  
[2.28±0.20]  
2.28TYP  
[2.28±0.20]  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  
配单直通车
BD235STU产品参数
型号:BD235STU
Brand Name:Fairchild Semiconductor
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Obsolete
零件包装代码:TO-126
针数:3
制造商包装代码:TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.29.00.95
风险等级:5.4
最大集电极电流 (IC):2 A
集电极-发射极最大电压:60 V
配置:SINGLE
最小直流电流增益 (hFE):25
JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3
JESD-609代码:e3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN
最大功率耗散 (Abs):25 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:NO
端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE
端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHz
Base Number Matches:1
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