BD249-S现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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首天国际（深圳）科技有限公司
BD249-S
数量-
厂家-
封装-
批号-
-
QQ：528164397 复制
QQ：1318502189 复制
0755-82807802/82807803

深圳市芯福林电子有限公司
BD249-S
数量-
厂家-
封装-
批号-
-
QQ：2881495808 复制
QQ：308365177 复制
13418564337

深圳市中利达电子科技有限公司
BD249-S
数量-
厂家-
封装-
批号-
-
QQ：1902134819 复制
QQ：2881689472 复制
0755-13686833545

北京元坤伟业科技有限公司
BD249-S
数量-
厂家-
封装-
批号-
-
QQ：857273081 复制
QQ：1594462451 复制
010-62104931、62106431、62104891、62104791

柒号芯城电子商务（深圳）有限公司
BD249-S
数量-
厂家-
封装-
批号-
-
QQ：2881677436 复制
QQ：2881620402 复制
18922803401

北京元坤伟业科技有限公司
BD249-S

数量5000
厂家Bourns
封装贴/插片
批号2024+
百分百原装正品，现货库存
QQ：857273081 复制
QQ：1594462451 复制
010-62104791

深圳市婷轩实业有限公司
BD249-S

数量5000
厂家Bourns Inc.
封装SOT-93
批号23+
进口原装现货热卖
QQ：2881943288 复制
QQ：3026548067 复制
0755-89608519

产品型号BD249-S的Datasheet PDF文件预览

BD249, BD249A, BD249B, BD249C

NPN SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD250 Series

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C CaseTemperature

25 A Continuous Collector Current

40 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD249

BD249A

BD249B

BD249C

BD249

Collector-emitter voltage (R_BE= 100 Ω)

V_CER

115

BD249A

BD249B

BD249C

Collector-emitter voltage (I_C= 30 mA)

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

125

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 0.4 A, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= 20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD249, BD249A, BD249B, BD249C

NPN SILICON POWER TRANSISTORS

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

BD249

Collector-emitter

BD249A

BD249B

BD249C

BD249

V_(BR)CEO

I_C

30 mA

I_B= 0

breakdown voltage

(see Note 5)

100

V_CE

55 V

70 V

90 V

_BE= 0

0.7

Collector-emitter

cut-off current

V_BE= 0

BD249A

BD249B

BD249C

BD249/249A

BD249B/249C

I_CES

V_CE= 115 V

Collector cut-off

current

V_CE

30 V

60 V

I_B= 0

I_CEO

I_EBO

I_B= 0

Emitter cut-off

current

V_EB

5 V

I_C= 0

V_CE

4 V

I_C= 1.5 A

I_C= 15 A

I_C= 25 A

I_C= 15 A

Forward current

transfer ratio

h_FE

(see Notes 5 and 6)

4 V

Collector-emitter

saturation voltage

Base-emitter

I_B

1.5 A

5 A

1.8

V_CE(sat)

V_BE

(see Notes 5 and 6)

f = 1 kHz

_C= 25 A

_C= 15 A

V_CE

4 V

voltage

4 V

I_C= 25 A

Small signal forward

current transfer ratio

Small signal forward

current transfer ratio

h_fe

V_CE

10 V

I_C

1 A

|h_fe|

f = 1 MHz

NOTES: 5. These parameters must be measured using pulse techniques, t_p= 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN

TYP

MAX

UNIT

R_θJC

R_θJA

°C/W

resistive-load-switching characteristics at 25°C case temperature

†

PARAMETER

TEST CONDITIONS

_B(on)= 0.5 A

R_L= 5 Ω

TYP

MAX

UNIT

t_on

t_off

Turn-on time

Turn-off time

I_C= 5 A

_B(off)= -0.5 A

0.3

0.9

µs

V_BE(off)= -5 V

t_p= 20 µs, dc ≤ 2%

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD249, BD249A, BD249B, BD249C

NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

BASE CURRENT

TCS635AD

TCS635AB

1000

100

V_CE= 4 V

T_C= 25°C

t_p= 300 µs, duty cycle < 2%

1·0

0·1

I_C= 25 A

I_C= 300 mA

I_C= 1 A

I_C= 3 A

I_C= 20 A

I_C= 15 A

I_C= 10 A

0·1

0·01

0·001

1·0

100

0·01

0·1

1·0

100

I_C- Collector Current - A

I_B- Base Current - A

Figure 1.

Figure 2.

BASE-EMITTER VOLTAGE

COLLECTOR CURRENT

TCS635AC

2·0

V_CE= 4 V

T_C= 25°C

1·8

1·6

1·4

1·2

1·0

0·8

0·6

0·1

1·0

100

I_C- Collector Current - A

Figure 3.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD249, BD249A, BD249B, BD249C

NPN SILICON POWER TRANSISTORS

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

SAS635AB

100

t_p= 300 µs, d = 0.1 = 10%

t_p= 1 ms, d = 0.1 = 10%

t_p= 10 ms, d = 0.1 = 10%

DC Operation

1·0

0·1

BD249

BD249A

BD249B

BD249C

0·01

1·0

100

1000

V_CE- Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

CASE TEMPERATURE

TIS635AA

140

120

100

125

150

T_C- Case Temperature - °C

Figure 5.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD249-S相关文章

配单直通车

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

BD249-S产品参数

型号:	BD249-S
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	BOURNS INC
包装说明：	PLASTIC, FM-3
针数：	3
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.68
Is Samacsys：	N
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	25 A
集电极-发射极最大电压：	45 V
配置：	SINGLE
最小直流电流增益 (hFE)：	5
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e1
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN
最大功率耗散 (Abs)：	125 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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