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深圳市芯福林电子有限公司
BD250B-S
数量-
厂家-
封装-
批号-
-
QQ：2881495808 复制
QQ：308365177 复制
13418564337

深圳市中利达电子科技有限公司
BD250B-S
数量-
厂家-
封装-
批号-
-
QQ：1902134819 复制
QQ：2881689472 复制
0755-13686833545

首天国际（深圳）科技有限公司
BD250B-S
数量-
厂家-
封装-
批号-
-
QQ：528164397 复制
QQ：1318502189 复制
0755-82807802/82807803

北京元坤伟业科技有限公司
BD250B-S
数量-
厂家-
封装-
批号-
-
QQ：857273081 复制
QQ：1594462451 复制
010-62104931、62106431、62104891、62104791

柒号芯城电子商务（深圳）有限公司
BD250B-S
数量-
厂家-
封装-
批号-
-
QQ：2881677436 复制
QQ：2881620402 复制
18922803401

深圳市婷轩实业有限公司
BD250B-S

数量5000
厂家Bourns Inc.
封装SOT-93
批号23+
进口原装现货热卖
QQ：2881943288 复制
QQ：3026548067 复制
0755-89608519

北京元坤伟业科技有限公司
BD250B-S

数量5000
厂家Bourns
封装贴/插片
批号2024+
百分百原装正品，现货库存
QQ：857273081 复制
QQ：1594462451 复制
010-62104931

北京元坤伟业科技有限公司
BD250B-S

数量5000
厂家Bourns
封装贴/插片
批号2024+
百分百原装正品，现货库存
QQ：857273081 复制
QQ：1594462451 复制
010-62104791

产品型号BD250B-S的Datasheet PDF文件预览

BD250, BD250A, BD250B, BD250C

PNP SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD249 Series

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C CaseTemperature

25 A Continuous Collector Current

40 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD250

-55

BD250A

BD250B

BD250C

BD250

-70

Collector-emitter voltage (R_BE= 100 Ω)

V_CER

-90

-115

-45

BD250A

BD250B

BD250C

-60

Collector-emitter voltage (I_C= -30 mA)

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

-5

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-25

-40

-5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

125

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -0.4 A, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= -20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD250, BD250A, BD250B, BD250C

PNP SILICON POWER TRANSISTORS

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

BD250

-45

-60

Collector-emitter

BD250A

BD250B

BD250C

BD250

V_(BR)CEO

I_C

-30 mA

I_B= 0

breakdown voltage

-80

(see Note 5)

-100

V_CE

-55 V

-70 V

-90 V

_BE= 0

-0.7

-1

Collector-emitter

cut-off current

V_BE= 0

BD250A

BD250B

BD250C

BD250/250A

BD250B/250C

I_CES

V_CE= -115 V

Collector cut-off

current

V_CE

-30 V

-60 V

I_B= 0

I_CEO

I_EBO

I_B= 0

-1

Emitter cut-off

current

V_EB

-5 V

I_C= 0

-1

V_CE

-4 V

I_C= -1.5 A

I_C= -15 A

I_C= -25 A

I_C= -15 A

Forward current

transfer ratio

h_FE

(see Notes 5 and 6)

-4 V

Collector-emitter

saturation voltage

Base-emitter

I_B

-1.5 A

-5 A

-1.8

-4

V_CE(sat)

V_BE

(see Notes 5 and 6)

f = 1 kHz

_C= -25 A

_C= -15 A

V_CE

-4 V

-2

voltage

-4 V

I_C= -25 A

-4

Small signal forward

current transfer ratio

Small signal forward

current transfer ratio

h_fe

V_CE

-10 V

I_C

- 1A

-1 A

|h_fe|

f = 1 MHz

NOTES: 5. These parameters must be measured using pulse techniques, t_p= 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN

TYP

MAX

UNIT

R_θJC

R_θJA

°C/W

resistive-load-switching characteristics at 25°C case temperature

†

PARAMETER

TEST CONDITIONS

_B(on)= -0.5 A

R_L= 5 Ω

TYP

MAX

UNIT

t_on

t_off

Turn-on time

Turn-off time

I_C= -5 A

_B(off)= 0.5 A

0.2

0.4

µs

V_BE(off)= 5 V

t_p= 20 µs, dc ≤ 2%

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD250, BD250A, BD250B, BD250C

PNP SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

BASE CURRENT

TCS636AD

TCS636AB

1000

100

-10

V_CE= -4 V

T_C= 25°C

t_p= 300 µs, duty cycle < 2%

-1·0

-0·1

I_C= -25 A

I_C= -300 mA

I_C= -1 A

I_C= -3 A

I_C= -20 A

I_C= -15 A

I_C= -10 A

-0·1

-0·01

-0·001

-1·0

-10

-100

-0·01

-0·1

-1·0

-10

-100

I_C- Collector Current - A

I_B- Base Current - A

Figure 1.

Figure 2.

BASE-EMITTER VOLTAGE

COLLECTOR CURRENT

TCS636AC

-1·8

V_CE= -4 V

T_C= 25°C

-1·6

-1·4

-1·2

-1·0

-0·8

-0·6

-0·1

-1·0

-10

-100

I_C- Collector Current - A

Figure 3.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD250, BD250A, BD250B, BD250C

PNP SILICON POWER TRANSISTORS

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

SAS636AB

-100

-10

t_p= 300 µs, d = 0.1 = 10%

t_p= 1 ms, d = 0.1 = 10%

t_p= 10 ms, d = 0.1 = 10%

DC Operation

-1·0

-0·1

-0·01

BD250

BD250A

BD250B

BD250C

-1·0

-10

-100

-1000

V_CE- Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

CASE TEMPERATURE

TIS635AA

140

120

100

125

150

T_C- Case Temperature - °C

Figure 5.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD250, BD250A, BD250B, BD250C

PNP SILICON POWER TRANSISTORS

MECHANICAL DATA

SOT-93

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

SOT-93

4,90

4,70

1,37

1,17

15,2

14,7

4,1

4,0

3,95

4,15

16,2 MAX.

18,0 TYP.

12,2 MAX.

31,0 TYP.

1,30

1,10

0,78

0,50

11,1

10,8

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXAW

NOTE A: The centre pin is in electrical contact with the mounting tab.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

BD250B-S相关文章

配单直通车

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

BD250B-S产品参数

型号:	BD250B-S
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	BOURNS INC
包装说明：	PLASTIC, FM-3
针数：	3
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.69
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	25 A
集电极-发射极最大电压：	80 V
配置：	SINGLE
最小直流电流增益 (hFE)：	5
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e1
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP
最大功率耗散 (Abs)：	125 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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