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柒号芯城电子商务（深圳）有限公司
BD326
数量-
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-
QQ：2881677436 复制
QQ：2881620402 复制
18922803401

北京元坤伟业科技有限公司
BD326
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-
QQ：857273081 复制
QQ：1594462451 复制
010-62104931、62106431、62104891、62104791

深圳市中利达电子科技有限公司
BD326
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0755-13686833545

首天国际（深圳）科技有限公司
BD326
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QQ：528164397 复制
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0755-82807802/82807803

深圳市芯福林电子有限公司
BD326
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QQ：2881495808 复制
QQ：308365177 复制
13418564337

深圳市华芯盛世科技有限公司
BD326

数量865000
厂家SPTECH
封装AN
批号最新批号
一级代理,原装特价现货！
QQ：2881475757 复制
0755-83225692

深圳市芯福林电子有限公司
BD326

数量85000
厂家SPTECH
封装AN
批号23+
真实库存全新原装正品！代理此型号
QQ：2881495753 复制
0755-23605827

华富芯（深圳）智能科技有限公司
BD326

数量15000
厂家SPTECH
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批号22+
大量原装正品现货热卖，价格优势，支持实单
QQ：1912486771 复制
0755-23482780

深圳市一线半导体有限公司
BD3260-LA

数量15000
厂家原厂品牌
封装原厂外观
批号
全新原装部分现货其他订货
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0755-88608801多线

产品型号BD329的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D100

BD329

NPN power transistor

1997 Mar 07

Product speciﬁcation

Supersedes data of September 1994

File under Discrete Semiconductors, SC04

Philips Semiconductors

Product speciﬁcation

NPN power transistor

BD329

FEATURES

PINNING

• High current (max. 3 A)

• Low voltage (max. 20 V).

DESCRIPTION

emitter

collector, connected to metal part of

mounting surface

APPLICATIONS

base

• Especially for battery equipped applications.

DESCRIPTION

handbook, halfpage

NPN power transistor in a TO-126; SOT32 plastic

package. PNP complement: BD330.

MAM254

Top view

Fig.1 Simplified outline (TO-126; SOT32)

and symbol.

QUICK REFERENCE DATA

SYMBOL

V_CBO

V_CEO

I_CM

PARAMETER

CONDITIONS

open emitter

open base

MIN.

TYP.

MAX.

UNIT

collector-base voltage

collector-emitter voltage

peak collector current

total power dissipation

DC current gain

−

P_tot

T_mb≤ 45 °C

375

−

h_FE

I_C= 0.5 A; V_CE= 1 V

f_T

transition frequency

I_C= 50 mA; V_CE= 5 V; f = 100 MHz −

130

MHz

1997 Mar 07

Philips Semiconductors

Product speciﬁcation

NPN power transistor

BD329

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

UNIT

−

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

open base

open collector

I_CM

I_BM

P_tot

total power dissipation

storage temperature

junction temperature

operating ambient temperature

T_mb≤ 45 °C

+150

150

+150

T_stg

−65

−

°C

T_j

T_amb

−65

THERMAL CHARACTERISTICS

SYMBOL

R_{th j-a}

PARAMETER

CONDITIONS

note 1

VALUE

100

UNIT

K/W

thermal resistance from junction to ambient

R_{th j-mb}

thermal resistance from junction to mounting base

Note

1. Refer to TO-126; SOT32 standard mounting conditions.

1997 Mar 07

Philips Semiconductors

Product speciﬁcation

NPN power transistor

BD329

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

I_E= 0; V_CB= 32 V

MIN. TYP. MAX. UNIT

I_CBO

collector cut-off current

−

100

375

−

µA

I_E= 0; V_CB= 32 V; T_j= 150 °C

I_C= 0; V_EB= 5 V

−

I_EBO

h_FE

emitter cut-off current

DC current gain

−

I_C= 0.5 A; V_CE= 1 V; see Fig.2

I_C= 2 A; V_CE= 1 V; see Fig.2

I_C= 5 mA; V_CE= 10 V

−

V_CEsat

V_BE

collector-emitter saturation voltage I_C= 2 A; I_B= 0.2 A

−

0.5

−

base-emitter voltage

I_C= 5 mA; V_CE= 10 V

I_C= 2 A; V_CE= 1 V

−

0.6

−

1.2

−

f_T

transition frequency

I_C= 50 mA; V_CE= 5 V; f = 100 MHz −

130

−

MHz

DC current gain ratio of the

complementary pairs

I_C= 0.5 A; V_CE= 1 V

−

1.6

h_FE1

-----------

h_FE2

MGD844

300

handbook, full pagewidth

250

200

150

100

−1

(mA)

V_CE= 1 V.

Fig.2 DC current gain; typical values.

1997 Mar 07

Philips Semiconductors

Product speciﬁcation

NPN power transistor

BD329

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32

2.5

scale

5 mm

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

max

2.7

2.3

0.88

0.65

0.60

0.45

11.1

10.5

7.8

7.2

16.5

15.3

1.5

0.9

3.2

3.0

3.9

3.6

2.54

4.58

2.29

0.254

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

97-03-04

SOT32

TO-126

1997 Mar 07

Philips Semiconductors

Product speciﬁcation

NPN power transistor

BD329

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1997 Mar 07

Philips Semiconductors

Product speciﬁcation

NPN power transistor

BD329

NOTES

1997 Mar 07

Philips Semiconductors – a worldwide company

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Romania: see Italy

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Tel. +49 40 23 53 60, Fax. +49 40 23 536 300

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Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

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Tel. +41 1 488 2686, Fax. +41 1 481 7730

Hungary: see Austria

India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874

Indonesia: see Singapore

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

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Tel. +90 212 279 2770, Fax. +90 212 282 6707

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20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

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252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

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Tel. +1 800 234 7381

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Uruguay: see South America

Vietnam: see Singapore

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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

Middle East: see Italy

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,

Internet: http://www.semiconductors.philips.com

Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA53

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

117047/00/02/pp8

Date of release: 1997 Mar 07

Document order number: 9397 750 01901