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    产品型号BD375的Datasheet PDF文件预览

    BD375/377/379  
    Medium Power Linear and Switching  
    Applications  
    •
    Complement to BD376, BD378 and BD380 respectively  
    TO-126  
    1. Emitter 2.Collector 3.Base  
    1
    NPN Epitaxial Silicon Transistor  
    Absolute Maximum Ratings T =25°C unless otherwise noted  
    C
    Symbol  
    Parameter  
    Value  
    Units  
    V
    V
    V
    Collector-Base Voltage  
    : BD375  
    : BD377  
    : BD379  
    50  
    75  
    100  
    V
    V
    V
    CBO  
    Collector-Emitter Voltage : BD375  
    45  
    60  
    80  
    V
    V
    V
    CEO  
    EBO  
    : BD377  
    : BD379  
    Emitter-Base Voltage  
    Collector Current (DC)  
    *Collector Current (Pulse)  
    Base Current  
    5
    V
    A
    I
    2
    C
    I
    I
    3
    A
    CP  
    B
    1
    25  
    A
    P
    Collector Dissipation (T =25°C)  
    W
    °C  
    °C  
    C
    C
    T
    Junction Temperature  
    Storage Temperature  
    150  
    J
    T
    - 55 ~ 150  
    STG  
    Electrical Characteristics T =25°C unless otherwise noted  
    C
    Symbol  
    Parameter  
    Test Condition  
    Min.  
    Typ.  
    Max.  
    Units  
    V
    (sus)  
    * Collector-Emitter Sustaining Voltage  
    CEO  
    : BD375  
    : BD377  
    : BD379  
    I
    I
    = 100mA, I = 0  
    45  
    60  
    80  
    V
    V
    V
    C
    C
    B
    BV  
    Collector-Base  
    : BD375  
    : BD377  
    : BD379  
    = 100µA, I = 0  
    50  
    75  
    100  
    V
    V
    V
    CBO  
    E
    Breakdown Voltage  
    I
    I
    Collector Cut-off Current  
    : BD375  
    : BD377  
    : BD379  
    V
    V
    V
    = 45V, I = 0  
    2
    2
    2
    µA  
    µA  
    µA  
    CBO  
    CB  
    CB  
    CB  
    E
    = 60V, I = 0  
    E
    = 80V, I = 0  
    E
    Emitter Cut-off Current  
    * DC Current Gain  
    V
    = 5V, I = 0  
    100  
    375  
    µA  
    EBO  
    EB  
    C
    h
    h
    V
    V
    = 2V, I = 0.15A  
    40  
    20  
    FE1  
    FE2  
    CE  
    CE  
    C
    = 2V, I = 1A  
    C
    V
    V
    (sat)  
    * Collector-Emitter Saturation Voltage  
    * Base-Emitter ON Voltage  
    Turn ON Time  
    I
    = 1A, I = 0.1A  
    1
    V
    V
    CE  
    C
    B
    (on)  
    V
    V
    I
    = 2V, I = 1A  
    1.5  
    BE  
    CE  
    C
    t
    t
    = 30V, I = 0.5A  
    50  
    ns  
    ns  
    ON  
    OFF  
    CC  
    C
    = - I = 0.05A  
    Turn OFF Time  
    B1  
    B2  
    500  
    R = 60Ω  
    L
    * Pulse Test: PW=350µs, duty Cycle=2% Pulsed  
    h
    Classification  
    FE  
    Classification  
    6
    10  
    63 ~ 160  
    16  
    100 ~ 250  
    25  
    h
    40 ~ 100  
    150 ~ 375  
    FE1  
    ©2000 Fairchild Semiconductor International  
    Rev. A, February 2000  
    Typical Characteristics  
    500  
    400  
    300  
    200  
    100  
    0
    100  
    80  
    60  
    40  
    20  
    0
    VCE = -2V  
    1E-3  
    0.01  
    0.1  
    1
    10  
    10  
    100  
    1000  
    IC[mA], COLLECTOR CURRENT  
    IC[A], COLLECTOR CURRENT  
    Figure 1. DC current Gain  
    Figure 2. Collector-Emitter Saturation Voltage  
    10  
    1.1  
    1.0  
    0.9  
    0.8  
    0.7  
    0.6  
    0.5  
    0.4  
    0.3  
    0.2  
    0.1  
    ICMAX. (Continuous)  
    1
    0.1  
    0.01  
    0.1  
    1
    10  
    100  
    1E-3  
    0.01  
    0.1  
    1
    10  
    VCE[V], COLLECTOR-EMITTER VOLTAGE  
    IC[A], COLLECTOR CURRENT  
    Figure 3. Base-Emitter Voltage  
    Figure 4. Safe Operating Area  
    40  
    35  
    30  
    25  
    20  
    15  
    10  
    5
    0
    0
    25  
    50  
    75  
    100  
    125  
    150  
    175  
    200  
    Tc[oC], CASE TEMPERATURE  
    Figure 5. Power Derating  
    ©2000 Fairchild Semiconductor International  
    Rev. A, February 2000  
    Package Demensions  
    TO-126  
    8.00 ±0.30  
    3.25 ±0.20  
    ø3.20 ±0.10  
    (1.00)  
    (0.50)  
    0.75 ±0.10  
    1.75 ±0.20  
    1.60 ±0.10  
    0.75 ±0.10  
    #1  
    +0.10  
    –0.05  
    0.50  
    2.28TYP  
    [2.28±0.20]  
    2.28TYP  
    [2.28±0.20]  
    Dimensions in Millimeters  
    ©2000 Fairchild Semiconductor International  
    Rev. A, February 2000  
    TRADEMARKS  
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
    not intended to be an exhaustive list of all such trademarks.  
    ACEx™  
    HiSeC™  
    SuperSOT™-8  
    SyncFET™  
    TinyLogic™  
    UHC™  
    Bottomless™  
    CoolFET™  
    CROSSVOLT™  
    E2CMOS™  
    FACT™  
    ISOPLANAR™  
    MICROWIRE™  
    POP™  
    PowerTrench®  
    QFET™  
    VCX™  
    FACT Quiet Series™  
    QS™  
    FAST®  
    Quiet Series™  
    SuperSOT™-3  
    SuperSOT™-6  
    FASTr™  
    GTO™  
    DISCLAIMER  
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
    PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
    LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
    NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
    LIFE SUPPORT POLICY  
    FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
    DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
    INTERNATIONAL.  
    As used herein:  
    1. Life support devices or systems are devices or systems  
    which, (a) are intended for surgical implant into the body,  
    or (b) support or sustain life, or (c) whose failure to perform  
    when properly used in accordance with instructions for use  
    provided in the labeling, can be reasonably expected to  
    result in significant injury to the user.  
    2. A critical component is any component of a life support  
    device or system whose failure to perform can be  
    reasonably expected to cause the failure of the life support  
    device or system, or to affect its safety or effectiveness.  
    PRODUCT STATUS DEFINITIONS  
    Definition of Terms  
    Datasheet Identification  
    Product Status  
    Definition  
    Advance Information  
    Formative or In  
    Design  
    This datasheet contains the design specifications for  
    product development. Specifications may change in  
    any manner without notice.  
    Preliminary  
    First Production  
    This datasheet contains preliminary data, and  
    supplementary data will be published at a later date.  
    Fairchild Semiconductor reserves the right to make  
    changes at any time without notice in order to improve  
    design.  
    No Identification Needed  
    Obsolete  
    Full Production  
    This datasheet contains final specifications. Fairchild  
    Semiconductor reserves the right to make changes at  
    any time without notice in order to improve design.  
    Not In Production  
    This datasheet contains specifications on a product  
    that has been discontinued by Fairchild semiconductor.  
    The datasheet is printed for reference information only.  
    ©2000 Fairchild Semiconductor International  
    Rev. E  
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