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  • BD377.图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • BD377.
  • 数量65000 
  • 厂家ST 
  • 封装TO-126 
  • 批号23+ 
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  • BD377.图
  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • BD377.
  • 数量10000 
  • 厂家ST 
  • 封装TO-126 
  • 批号21+ 
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产品型号BD37710的Datasheet PDF文件预览

BD375/377/379  
Medium Power Linear and Switching  
Applications  
Complement to BD376, BD378 and BD380 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
: BD375  
: BD377  
: BD379  
50  
75  
100  
V
V
V
CBO  
Collector-Emitter Voltage : BD375  
45  
60  
80  
V
V
V
CEO  
EBO  
: BD377  
: BD379  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
5
V
A
I
2
C
I
I
3
A
CP  
B
1
25  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
Junction Temperature  
Storage Temperature  
150  
J
T
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD375  
: BD377  
: BD379  
I
I
= 100mA, I = 0  
45  
60  
80  
V
V
V
C
C
B
BV  
Collector-Base  
: BD375  
: BD377  
: BD379  
= 100µA, I = 0  
50  
75  
100  
V
V
V
CBO  
E
Breakdown Voltage  
I
I
Collector Cut-off Current  
: BD375  
: BD377  
: BD379  
V
V
V
= 45V, I = 0  
2
2
2
µA  
µA  
µA  
CBO  
CB  
CB  
CB  
E
= 60V, I = 0  
E
= 80V, I = 0  
E
Emitter Cut-off Current  
* DC Current Gain  
V
= 5V, I = 0  
100  
375  
µA  
EBO  
EB  
C
h
h
V
V
= 2V, I = 0.15A  
40  
20  
FE1  
FE2  
CE  
CE  
C
= 2V, I = 1A  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
Turn ON Time  
I
= 1A, I = 0.1A  
1
V
V
CE  
C
B
(on)  
V
V
I
= 2V, I = 1A  
1.5  
BE  
CE  
C
t
t
= 30V, I = 0.5A  
50  
ns  
ns  
ON  
OFF  
CC  
C
= - I = 0.05A  
Turn OFF Time  
B1  
B2  
500  
R = 60Ω  
L
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed  
h
Classification  
FE  
Classification  
6
10  
63 ~ 160  
16  
100 ~ 250  
25  
h
40 ~ 100  
150 ~ 375  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
500  
400  
300  
200  
100  
0
100  
80  
60  
40  
20  
0
VCE = -2V  
1E-3  
0.01  
0.1  
1
10  
10  
100  
1000  
IC[mA], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Collector-Emitter Saturation Voltage  
10  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
ICMAX. (Continuous)  
1
0.1  
0.01  
0.1  
1
10  
100  
1E-3  
0.01  
0.1  
1
10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Base-Emitter Voltage  
Figure 4. Safe Operating Area  
40  
35  
30  
25  
20  
15  
10  
5
0
0
25  
50  
75  
100  
125  
150  
175  
200  
Tc[oC], CASE TEMPERATURE  
Figure 5. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-126  
8.00 ±0.30  
3.25 ±0.20  
ø3.20 ±0.10  
(1.00)  
(0.50)  
0.75 ±0.10  
1.75 ±0.20  
1.60 ±0.10  
0.75 ±0.10  
#1  
+0.10  
–0.05  
0.50  
2.28TYP  
[2.28±0.20]  
2.28TYP  
[2.28±0.20]  
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
HiSeC™  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
E2CMOS™  
FACT™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench®  
QFET™  
VCX™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
FASTr™  
GTO™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. E  
配单直通车
BD37710产品参数
型号:BD37710
是否Rohs认证: 不符合
生命周期:Obsolete
Reach Compliance Code:compliant
ECCN代码:EAR99
风险等级:5.92
最大集电极电流 (IC):2 A
集电极-发射极最大电压:60 V
配置:SINGLE
最小直流电流增益 (hFE):63
JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3
JESD-609代码:e0
元件数量:1
端子数量:3
最高工作温度:140 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
极性/信道类型:NPN
最大功率耗散 (Abs):15 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE
端子位置:SINGLE
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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