BDW23A芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

BDW23/A/B/C

Hammer Drivers, Audio Amplifiers

Applications

•

Power Darlington TR

Complement to BDW24, BDW24A, BDW24B and BDW24C respectively

TO-220

1.Base 2.Collector 3.Emitter

1

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

C

Symbol

Parameter

Value

Units

V

Collector-Base Voltage

CBO

: BDW23

45

60

80

V

: BDW23A

: BDW23B

: BDW23C

100

V

Collector-Emitter Voltage

CEO

: BDW23

45

60

80

V

: BDW23A

: BDW23B

: BDW23C

100

V

Emitter-Base Voltage

Collector Current (DC)

5

V

A

EBO

I

6

C

*Collector Current (Pulse)

Base Current

8

0.2

A

CP

B

A

P

Collector Dissipation (T =25°C)

50

W

°C

C

T

Junction Temperature

Storage Temperature

150

J

- 65 ~ 150

STG

Rev. A, February 2000

Electrical Characteristics T =25°C unless otherwise noted

C

Unit

s

Symbol

(sus)

Parameter

Test Condition

Min.

Typ.

Max.

V

Collector-Emitter Sustaining Voltage

CEO

: BDW23

I

= 100mA, I = 0

45

60

80

V

C

B

: BDW23A

: BDW23B

: BDW23C

100

I

Collector Cut-off Current

: BDW23

CBO

V

= 45V, I = 0

200

µA

CB

E

: BDW23A

: BDW23B

: BDW23C

= 60V, I = 0

E

= 80V, I = 0

E

= 100V, I = 0

E

I

Collector Cut-off Current

: BDW23

CEO

V

= 22V, I = 0

500

µA

CE

B

: BDW23A

: BDW23B

: BDW23C

= 30V, I = 0

B

= 40V, I = 0

B

= 50V, I = 0

B

I

Emitter Cut-off Current

* DC Current Gain

V

= 5V, I = 0

2

mA

EBO

EB

C

h

V

= 3V, I = 1A

1000

750

100

FE

CE

C

= 3V, I = 2A

20000

C

= 3V, I = 6A

C

V

(sat)

* Collector-Emitter Saturation Voltage

I

= 2A, I = 8mA

2

3

V

CE

C

B

= 6A, I = 60mA

B

V

(sat)

(on)

* Base-Emitter Saturation Voltage

* Base-Emitter ON Voltage

I

= 2A, I = 8mA

2.5

V

BE

C

B

V

= 3V, I = 1A

2.5

3

V

CE

C

= 3V, I = 6A

C

V

* Parallel Diode Forward Voltage

I = 2A

1.8

V

F

* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed

Rev. A, February 2000

Typical Characteristics

10000

8.0

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

V_CE= 3V

1000

100

0.1

1

10

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

I_C[A], COLLECTOR CURRENT

V_BE[V], BASE-EMITTER VOLTAGE

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

100

I_C= 250 I_B

2.4

2.0

1.6

1.2

0.8

0.4

0.0

I_C(max). Pulsed

10

10µs

I_C(max).

Continuous

100µs

1

1ms

BDW23

10ms

BDW23A

BDW23B

BDW23C

0.1

1

10

100

1000

0.1

1

10

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 3. Base-Emitter On Voltage

Figure 4. Safe Operating Area

80

70

60

50

40

30

20

10

0

25

50

75

100

125

150

175

200

T_C[^oC], CASE TEMPERATURE

Figure 5. Power Derating

Rev. A, February 2000

Package Demensions

TO-220

4.50 ±0.20

9.90 ±0.20

(8.70)

+0.10

1.30

–0.05

ø3.60 ±0.10

(45

°

)

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10

+0.10

–0.05

0.50

2.40 ±0.20

2.54TYP

[2.54 ±0.20

]

[2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

Rev. A, February 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS™

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench^®

QFET™

VCX™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

FASTr™

GTO™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. E

型号:	BDW23A
是否Rohs认证：	不符合
生命周期：	Obsolete
零件包装代码：	SFM
包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.76
最大集电极电流 (IC)：	6 A
集电极-发射极最大电压：	60 V
配置：	DARLINGTON
最小直流电流增益 (hFE)：	750
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN
最大功率耗散 (Abs)：	50 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON
Base Number Matches：	1

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