BF 1005
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
Drain-source breakdown voltage
12
8
8
-
-
-
V
V
(BR)DS
I = 650 µA, -V
= 4 V, - V
= 4 V
G2S
D
G1S
Gate 1 source breakdown voltage
±I = 10 mA, V = V = 0
-
-
12
13
-
±V
±V
(BR)G1SS
(BR)G2SS
G1SS
G1S
G2S
DS
Gate 2 source breakdown voltage
±I = 10 mA, V = 0 V, V = 0 V
G2S
G1S
DS
Gate 1 source current
= 6 V, V = 0 V
100
-
µA
+I
V
G1S
G2S
Gate 2 source leakage current
±V = 8 V, V = 0 V, V = 0 V
-
50
nA
±I
G2SS
G2S
G1S
DS
Drain current
= 5 V, V
-
-
1.5 mA
I
I
DSS
V
= 0 , V
= 4.5 V
G2S
DS
G1S
Operating current (selfbiased)
= 5 V, V = 4.5 V
8
-
10
1
-
DSO
V
DS
G2S
Gate 2-source pinch-off voltage
= 5 V, I = 100 µA
-
-
V
V
G2S(p)
V
DS
D
AC characteristics
Forward transconductance (self biased)
-
-
24
2.1
1.3
19
mS
g
fs
V
= 5 V, V
= 4.5 V, f = 1 kHz
G2S
DS
Gate 1-input capacitance (self biased)
= 5 V, V = 4 V, f = 1 MHz
2.5 pF
C
C
G
g1ss
dss
ps
V
DS
G2S
Output capacitance (self biased)
= 5 V, V = 4 V, f = 100 MHz
-
-
V
DS
G2S
Power gain (self biased)
= 5 V, V = 4 V, f = 800 MHz
-
-
-
-
dB
V
DS
G2S
Noise figure (self biased)
= 5 V, V = 4 V, f = 800 MHz
-
1.4
50
F
800
V
DS
G2S
Gain control range (self biased)
= 5 V, V = 1 V, f = 800 MHz
40
∆G
ps
V
DS
G2S
Semiconductor Group
Semiconductor Group
2
Au -25-1998
1998-11-01
2