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    • 北京元坤伟业科技有限公司

           该会员已使用本站17年以上

    • BF2040WE6814XT
    • 数量-
    • 厂家-
    • 封装-
    • 批号-
    • -
    • QQ:857273081QQ：857273081 复制
      QQ:1594462451QQ：1594462451 复制
    • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
    更多
    • BF2040WE6814XT图

    • 北京中其伟业科技有限公司

       该会员已使用本站16年以上
    • BF2040WE6814XT
    • 数量1439 
    • 厂家INFINEON 
    • 封装SOT-343 
    • 批号16+ 
    • 特价,原装正品,绝对公司现货库存,原装特价!
    • QQ:2880824479QQ：2880824479 复制
    • 010-62104891 QQ:2880824479

    产品型号BF2040WH6814XTSA1的Datasheet PDF文件预览

    BF2040...  
    Silicon N-Channel MOSFET Tetrode  
    • For low noise , high gain controlled  
    input stages up to 1GHz  
    • Operating voltage 5 V  
    • Pb-free (RoHS compliant) package  
    • Qualified according AEC Q101  
    ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
    Type  
    Package  
    SOT143  
    SOT143R 1=D  
    SOT343 1=D  
    Pin Configuration  
    Marking  
    NFs  
    NFs  
    BF2040  
    BF2040R  
    BF2040W  
    1=S  
    2=D  
    2=S  
    2=S  
    3=G2 4=G1  
    3=G1 4=G2  
    3=G1 4=G2  
    -
    -
    -
    -
    -
    -
    NFs  
    Maximum Ratings  
    Parameter  
    Drain-source voltage  
    Symbol  
    V
    DS  
    Value  
    8
    Unit  
    V
    40  
    10  
    7
    mA  
    Continuous drain current  
    Gate 1/ gate 2-source current  
    Gate 1 (external biasing)  
    Total power dissipation  
    I
    D
    ±I  
    G1/2SM  
    V
    mW  
    +V  
    G1SE  
    P
    tot  
    T ≤ 76 °C, BF2040, BF2040R  
    200  
    200  
    S
    T ≤ 94 °C, BF2040W  
    S
    °C  
    Storage temperature  
    Channel temperature  
    T
    T
    -55 ... 150  
    150  
    stg  
    ch  
    Thermal Resistance  
    Parameter  
    Channel - soldering point  
    Symbol  
    R
    thchs  
    Value  
    Unit  
    K/W  
    1)  
    BF2040, BF2040R  
    BF2040W  
    ≤ 370  
    ≤ 280  
    1
    For calculation of R  
    please refer to Application Note Thermal Resistance  
    thJA  
    2007-06-01  
    1
    BF2040...  
    Electrical Characteristics at T = 25°C, unless otherwise specified  
    A
    Parameter  
    Symbol  
    Values  
    typ. max.  
    Unit  
    min.  
    DC Characteristics  
    10  
    6
    6
    -
    -
    -
    -
    V
    Drain-source breakdown voltage  
    V
    (BR)DS  
    I = 20 µA, V  
    = 0 , V  
    = 0  
    D
    G1S  
    G2S  
    15  
    15  
    50  
    50  
    50  
    -
    Gate1-source breakdown voltage  
    +I = 10 mA, V = 0 , V = 0  
    +V  
    +V  
    (BR)G1SS  
    (BR)G2SS  
    G1SS  
    G1S  
    G2S  
    DS  
    -
    Gate2-source breakdown voltage  
    +I = 10 mA, V = 0 , V = 0  
    G2S  
    G1S  
    DS  
    -
    nA  
    Gate1-source leakage current  
    = 5 V, V = 0 , V = 0  
    +I  
    +I  
    V
    G1S  
    G2S  
    DS  
    -
    -
    Gate2-source leakage current  
    = 5 V, V = 0 , V = 0  
    G2SS  
    V
    G2S  
    G1S  
    DS  
    -
    -
    µA  
    mA  
    V
    Drain current  
    = 5 V, V  
    I
    DSS  
    V
    = 0 , V  
    = 4 V  
    G2S  
    DS  
    G1S  
    -
    15  
    Drain-source current  
    = 5 V, V = 4 V, R = 100 kΩ  
    I
    DSX  
    V
    DS  
    G2S  
    G1  
    Gate1-source pinch-off voltage  
    = 5 V, V = 4 V, I = 20 µA  
    V
    V
    0.3  
    0.3  
    0.6  
    0.7  
    -
    -
    G1S(p)  
    G2S(p)  
    V
    DS  
    G2S  
    D
    Gate2-source pinch-off voltage  
    = 5 V, I = 20 µA  
    V
    DS  
    D
    2007-06-01  
    2
    BF2040...  
    Electrical Characteristics at T = 25°C, unless otherwise specified  
    A
    Parameter  
    Symbol  
    Values  
    Unit  
    min.  
    37  
    -
    typ. max.  
    AC Characteristics - (verified by random sampling)  
    Forward transconductance  
    42  
    -
    g
    mS  
    fs  
    V
    = 5 V, I = 15 mA, V  
    = 4 V  
    DS  
    D
    G2S  
    2.9  
    3.4 pF  
    Gate1 input capacitance  
    = 5 V, I = 15 mA, V  
    f = 10 MHz  
    C
    C
    G
    F
    g1ss  
    dss  
    p
    V
    = 4 V,  
    DS  
    D
    G2S  
    -
    1.6  
    -
    Output capacitance  
    V
    = 5 V, I = 15 mA, V  
    = 4 V,  
    = 4 V,  
    = 4 V,  
    DS  
    D
    G2S  
    G2S  
    G2S  
    f = 10 MHz  
    Power gain  
    20  
    -
    23  
    -
    dB  
    V
    = 5 V, I = 15 mA, V  
    DS  
    D
    f = 800 MHz  
    1.6  
    2.2 dB  
    Noise figure  
    V
    = 5 V, I = 15 mA, V  
    DS  
    D
    f = 800 MHz  
    45  
    50  
    -
    Gain control range  
    ∆G  
    p
    V
    = 5 V, V  
    = 4 ...0 V , f = 800 GHz  
    DS  
    G2S  
    2007-06-01  
    3
    BF2040...  
    Total power dissipation P = ƒ(T )  
    Total power dissipation P = ƒ(T )  
    tot S  
    tot  
    S
    BF2040, BFD2040R  
    BF2040W  
    220  
    mW  
    220  
    mA  
    180  
    160  
    140  
    120  
    100  
    80  
    180  
    160  
    140  
    120  
    100  
    80  
    60  
    60  
    40  
    40  
    20  
    20  
    0
    0
    0
    °C  
    °C  
    0
    15 30 45 60 75 90 105 120  
    150  
    15 30 45 60 75 90 105 120  
    150  
    T
    T
    S
    S
    Drain current I = ƒ(I )  
    Output characteristics I = ƒ(V )  
    D DS  
    D
    G1  
    V
    = 4V  
    V
    V
    = 4 V  
    = Parameter  
    G2S  
    G2S  
    G1S  
    26  
    mA  
    28  
    mA  
    24  
    22  
    1.4V  
    22  
    20  
    18  
    16  
    14  
    12  
    10  
    8
    20  
    18  
    16  
    14  
    12  
    10  
    8
    1.3V  
    1.2V  
    1.1V  
    1V  
    6
    6
    4
    4
    2
    2
    0
    0
    µA  
    V
    0
    10 20 30 40 50 60 70  
    90  
    0
    1
    2
    3
    4
    5
    6
    7
    8
    10  
    I
    V
    DS  
    G1  
    2007-06-01  
    4
    BF2040...  
    Gate 1 current I = ƒ(V  
    )
    G1S  
    Gate 1 forward transconductance  
    G1  
    V
    V
    = 5V  
    g = ƒ(I )  
    DS  
    fs  
    D
    = Parameter  
    V
    = 5V, V  
    = Parameter  
    G2S  
    DS  
    G2S  
    195  
    µA  
    45  
    mS  
    4V  
    4V  
    165  
    150  
    135  
    120  
    105  
    90  
    35  
    30  
    25  
    20  
    15  
    10  
    5
    3.5V  
    3.5V  
    3V  
    3V  
    2.5V  
    2V  
    75  
    2.5V  
    2V  
    60  
    45  
    30  
    15  
    0
    0
    V
    mA  
    0
    0.4 0.8 1.2  
    1.6  
    2
    2.4  
    3.2  
    G1S  
    0
    4
    8
    12 16 20 24 28 32  
    40  
    V
    I
    D
    Drain current I = ƒ(V  
    )
    Drain current I = ƒ(V  
    )
    D
    G1S  
    D
    GG  
    V
    V
    = 5V  
    V
    = 5V, V  
    = 4V, R = 80kΩ  
    DS  
    DS  
    G2S  
    G1  
    =gate1 supply voltage)  
    = Parameter  
    (connected to V  
    , V  
    G2S  
    GG GG  
    16  
    28  
    mA  
    4V  
    mA  
    3V  
    24  
    22  
    20  
    18  
    16  
    14  
    12  
    10  
    8
    12  
    10  
    8
    2V  
    6
    1.5V  
    4
    6
    4
    2
    2
    0
    0
    0
    V
    V
    0
    0.2 0.4 0.6 0.8  
    1
    1.2 1.4 1.6  
    2
    1
    2
    3
    5
    V
    V
    GG  
    G1S  
    2007-06-01  
    5
    BF2040...  
    Drain current I = ƒ(V  
    )
    Crossmodulation V  
    = (AGC)  
    D
    GG  
    unw  
    V
    = 4V  
    V
    = 5 V  
    G2S  
    DS  
    R
    = Parameter in kΩ  
    G1  
    120  
    28  
    mA  
    70  
    dBµV  
    24  
    22  
    20  
    18  
    16  
    14  
    12  
    10  
    8
    80  
    90  
    110  
    105  
    100  
    95  
    110  
    130  
    90  
    6
    4
    85  
    2
    0
    80  
    V
    dB  
    0
    1
    2
    3
    4
    5
    6
    8
    0
    5
    10 15 20 25 30 35 40  
    50  
    V
    =V  
    AGC  
    GG DS  
    2007-06-01  
    6
    BF2040...  
    Cossmodulation test circuit  
    VAGC  
    VDS  
    4n7  
    R1  
    10kΩ  
    2.2 uH  
    4n7  
    4n7  
    RL  
    50Ω  
    4n7  
    50 Ω  
    RGEN  
    50Ω  
    RG1  
    VGG  
    Semibiased  
    2007-06-01  
    7
    Package SOT143  
    BF2040...  
    Package Outline  
    ±0.1  
    1
    ±0.1  
    2.9  
    B
    1.9  
    0.1 MAX.  
    4
    3
    1
    2
    A
    0.2  
    +0.1  
    -0.05  
    0.08...0.1  
    5
    0.8  
    0...8˚  
    +0.1  
    -0.05  
    0.4  
    M
    M
    0.2  
    0.25  
    B
    A
    1.7  
    Foot Print  
    0.8 1.2 0.8  
    1.2  
    0.8  
    0.8  
    Marking Layout (Example)  
    Manufacturer  
    2005, June  
    RF s  
    Date code (YM)  
    Pin 1  
    BFP181  
    Type code  
    Standard Packing  
    Reel ø180 mm = 3.000 Pieces/Reel  
    Reel ø330 mm = 10.000 Pieces/Reel  
    0.2  
    4
    3.15  
    1.15  
    Pin 1  
    2007-06-01  
    8
    Package SOT143R  
    BF2040...  
    Package Outline  
    ±0.1  
    1
    ±0.1  
    2.9  
    B
    0.1 MAX.  
    1.9  
    4
    1
    3
    2
    A
    0.2  
    +0.1  
    -0.05  
    0.8  
    +0.1  
    -0.05  
    0.4  
    0˚...  
    A
    8˚  
    1.7  
    M
    0.2  
    M
    0.25  
    B
    Foot Print  
    0.8  
    1.2  
    0.8  
    0.8 0.8  
    1.2  
    Marking Layout (Example)  
    Reverse bar  
    2005, June  
    Date code (YM)  
    Pin 1  
    Manufacturer  
    BFP181R  
    Type code  
    Standard Packing  
    Reel ø180 mm = 3.000 Pieces/Reel  
    Reel ø330 mm = 10.000 Pieces/Reel  
    0.2  
    4
    3.15  
    Pin 1  
    1.15  
    2007-06-01  
    9
    Package SOT343  
    BF2040...  
    Package Outline  
    ±0.1  
    0.9  
    ±0.2  
    2
    0.1 MAX.  
    0.1  
    1.3  
    A
    4
    1
    3
    2
    0.15  
    +0.1  
    +0.1  
    -0.05  
    0.3  
    0.15  
    -0.05  
    +0.1  
    0.6  
    4x  
    -0.05  
    M
    0.2  
    A
    M
    0.1  
    Foot Print  
    0.6  
    1.15  
    0.9  
    Marking Layout (Example)  
    Manufacturer  
    2005, June  
    Date code (YM)  
    BGA420  
    Type code  
    Pin 1  
    Standard Packing  
    Reel ø180 mm = 3.000 Pieces/Reel  
    Reel ø330 mm = 10.000 Pieces/Reel  
    0.2  
    4
    2.15  
    Pin 1  
    1.1  
    2007-06-01  
    10  
    BF2040...  
    Edition 2006-02-01  
    Published by  
    Infineon Technologies AG  
    81726 München, Germany  
    © Infineon Technologies AG 2007.  
    All Rights Reserved.  
    Attention please!  
    The information given in this dokument shall in no event be regarded as a guarantee  
    of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
    examples or hints given herein, any typical values stated herein and/or any information  
    regarding the application of the device, Infineon Technologies hereby disclaims any  
    and all warranties and liabilities of any kind, including without limitation warranties of  
    non-infringement of intellectual property rights of any third party.  
    Information  
    For further information on technology, delivery terms and conditions and prices  
    please contact your nearest Infineon Technologies Office (www.infineon.com).  
    Warnings  
    Due to technical requirements components may contain dangerous substances.  
    For information on the types in question please contact your nearest  
    Infineon Technologies Office.  
    Infineon Technologies Components may only be used in life-support devices or  
    systems with the express written approval of Infineon Technologies, if a failure of  
    such components can reasonably be expected to cause the failure of that  
    life-support device or system, or to affect the safety or effectiveness of that  
    device or system.  
    Life support devices or systems are intended to be implanted in the human body,  
    or to support and/or maintain and sustain and/or protect human life. If they fail,  
    it is reasonable to assume that the health of the user or other persons  
    may be endangered.  
    2007-06-01  
    11  
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