欢迎访问ic37.com |
会员登录 免费注册
发布采购
所在地: 型号: 精确
  • 批量询价
  •  
  • 供应商
  • 型号
  • 数量
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
更多
  • BFW88图
  • 北京首天国际有限公司

     该会员已使用本站16年以上
  • BFW88
  • 数量8239 
  • 厂家√ 欧美㊣品 
  • 封装贴◆插 
  • 批号2024+ 
  • 百分百原装正品,现货库存
  • QQ:528164397QQ:528164397 复制
    QQ:1318502189QQ:1318502189 复制
  • 010-62565447 QQ:528164397QQ:1318502189
  • BFW88图
  • 深圳市一线半导体有限公司

     该会员已使用本站11年以上
  • BFW88
  • 数量22000 
  • 厂家原厂品牌 
  • 封装原厂外观 
  • 批号 
  • 全新原装部分现货其他订货
  • QQ:2881493920QQ:2881493920 复制
    QQ:2881493921QQ:2881493921 复制
  • 0755-88608801多线 QQ:2881493920QQ:2881493921

产品型号BFW92的Datasheet PDF文件预览

BFW92  
Vishay Telefunken  
Silicon NPN Planar RF Transistor  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
RF amplifier up to GHz range.  
Features  
High power gain  
Low noise figure  
3
2
94 9308  
13623  
1
BFW92 Marking: BFW92  
Plastic case (TO 50)  
1 = Collector, 2 = Emitter, 3 = Base  
Absolute Maximum Ratings  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
Value  
25  
15  
2.5  
25  
Unit  
V
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Total power dissipation  
Junction temperature  
Storage temperature range  
V
CBO  
V
CEO  
V
EBO  
V
I
C
mA  
mW  
C
T
60 C  
P
tot  
300  
150  
–55 to +150  
amb  
T
j
T
stg  
C
Maximum Thermal Resistance  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
3
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm  
plated with 35 m Cu  
Document Number 85040  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  
BFW92  
Vishay Telefunken  
Electrical DC Characteristics  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Collector cut-off current  
Collector-base cut-off current  
Emitter-base cut-off current  
Test Conditions  
= 25 V, V = 0  
Symbol Min Typ Max Unit  
V
CE  
V
CB  
V
EB  
I
100  
A
BE  
CES  
= 10 V, I = 0  
I
100 nA  
E
CBO  
= 2.5 V, I = 0  
I
10  
A
C
EBO  
Collector-emitter breakdown voltage I = 1 mA, I = 0  
V
(BR)CEO  
15  
V
C
B
Collector-emitter saturation voltage I = 10 mA, I = 1 mA  
V
CEsat  
0.1 0.6  
V
C
B
DC forward current transfer ratio  
V
V
= 1 V, I = 2 mA  
h
FE  
h
FE  
20 100 150  
20  
CE  
CE  
C
= 1 V, I = 25 mA  
C
Electrical AC Characteristics  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol Min  
Typ Max Unit  
Transition frequency  
V
V
V
V
= 5 V, I = 2 mA, f = 300 MHz  
f
f
f
C
C
C
1
1.5  
2.4  
2.1  
0.5  
0.3  
0.9  
3.5  
GHz  
GHz  
GHz  
pF  
pF  
pF  
CE  
CE  
CE  
CB  
C
T
T
T
= 5 V, I = 14 mA, f = 300 MHz  
C
= 5 V, I = 25 mA, f = 300 MHz  
1.3  
C
Collector-base capacitance  
Collector-emitter capacitance V = 5 V, f = 1 MHz  
Emitter-base capacitance  
Noise figure  
= 5 V, f = 1 MHz  
cb  
ce  
eb  
CE  
V
V
= 0.5 V, f = 1 MHz  
EB  
= 5 V, I = 2 mA, Z = 50  
,
F
dB  
CE  
C
S
f = 500 MHz  
Power gain  
V
= 5 V, I = 10 mA, Z = 50  
,
,
G
G
23  
11  
dB  
dB  
dB  
CE  
C
S
pe  
pe  
IM  
f = 200 MHz  
V
CE  
= 5 V, I = 10 mA, Z = 50  
C
S
f = 800 MHz  
Signal–to–intermodulation  
ratio  
V
CE  
= 6 V, I = 10 mA, Z = 37.5  
,
d
–45  
C
L
V = 100 mV, f = 183 MHz,  
1
1
V = 100 mV, f = 200 MHz,  
2
2
f
= 217 MHz  
dIM  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85040  
Rev. 3, 20-Jan-99  
2 (5)  
BFW92  
Vishay Telefunken  
Typical Characteristics (Tamb = 25 C unless otherwise specified)  
400  
350  
300  
250  
200  
150  
100  
50  
1.0  
0.8  
0.6  
0.4  
0.2  
0
f=1MHz  
0
0
20 40 60 80 100 120 140 160  
– Ambient Temperature ( °C )  
0
4
8
12  
16  
20  
12845  
T
amb  
13609  
V
CB  
– Collector Base Voltage ( V )  
Figure 3. Collector Base Capacitance vs.  
Collector Base Voltage  
Figure 1. Total Power Dissipation vs.  
Ambient Temperature  
3000  
2500  
2000  
1500  
1000  
500  
V
=5V  
CE  
f=300MHz  
0
0
5
10 15 20 25 30 35 40  
13608  
I – Collector Current ( mA )  
C
Figure 2. Transition Frequency vs. Collector Current  
Document Number 85040  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
3 (5)  
BFW92  
Vishay Telefunken  
Dimensions of BFW92 in mm  
96 12244  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85040  
Rev. 3, 20-Jan-99  
4 (5)  
BFW92  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as their  
impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85040  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
5 (5)  
配单直通车
BFW92产品参数
型号:BFW92
生命周期:Transferred
IHS 制造商:NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
包装说明:,
Reach Compliance Code:unknown
风险等级:5.59
最大集电极电流 (IC):0.025 A
配置:Single
最小直流电流增益 (hFE):20
最高工作温度:175 °C
极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W
子类别:Other Transistors
表面贴装:YES
Base Number Matches:1
  •  
  • 供货商
  • 型号 *
  • 数量*
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
批量询价选中的记录已选中0条,每次最多15条。
 复制成功!