Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
290
UNIT
K/W
Rth j-s
thermal resistance from junction up to Ts = 85 °C; note 1
to soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
hFE
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
IC = 25 mA; VCE = 1 V;
amb = 25 °C
MIN.
TYP. MAX. UNIT
−
−
50
nA
20
75
150
T
fT
transition frequency
collector capacitance
IC = 25 mA; VCE = 5 V;
f = 500 MHz; Tamb = 25 °C
−
2.8
0.7
−
−
GHz
pF
Cc
IE = 0; VCB = 10 V; f = 1 MHz;
−
Tamb = 25 °C
Ce
emitter capacitance
IC = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 5 V; f = 1 MHz
−
−
−
1.25
0.4
15
−
−
−
pF
pF
dB
Cre
GUM
feedback capacitance
maximum unilateral power gain IC = 15 mA; VCE = 10 V;
(note 1)
f = 800 MHz; Tamb = 25 °C
F
noise figure
IC = 2 mA; VCE = 5 V; f = 800 MHz;
Tamb = 25 °C; ZS = 60 Ω; bs = opt.
−
−
2.5
−
−
dB
Vo
output voltage
note 2
150
mV
Notes
2
s21
------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB..
(1 – s11 2) (1 – s22
)
2
2. dim = −60 dB (DIN 45004B, para. 6,3: 3-tone); IC = 14 mA; VCE = 10 V; ZL = 75 Ω.
Vp = Vo; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
1995 Sep 12
3