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    产品型号BFG197/X的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    BFG197; BFG197/X; BFG197/XR  
    NPN 7 GHz wideband transistor  
    1995 Sep 13  
    Product specification  
    Supersedes data of November 1992  
    File under discrete semiconductors, SC14  
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    FEATURES  
    PINNING  
    PIN  
    • High power gain  
    • Low noise figure  
    DESCRIPTION  
    BFG197 (Fig.1) Code: V5  
    4
    3
    • Gold metallization ensures  
    excellent reliability.  
    1
    2
    3
    4
    collector  
    base  
    emitter  
    emitter  
    DESCRIPTION  
    1
    2
    The BFG197 is a silicon NPN  
    BFG197/X (Fig.1) Code: V13  
    Top view  
    MSB014  
    transistor in a 4-pin, dual-emitter  
    plastic SOT143 envelope. It is  
    primarily intended for wideband  
    applications in the GHz range, such  
    as satellite TV systems and repeater  
    amplifiers in fibre-optic systems.  
    1
    2
    3
    4
    collector  
    emitter  
    base  
    Fig.1 SOT143.  
    emitter  
    BFG197A/XR (Fig.2) Code: V35  
    1
    2
    3
    4
    collector  
    emitter  
    base  
    3
    4
    emitter  
    2
    1
    Top view  
    MSB035  
    Fig.2 SOT143XR.  
    QUICK REFERENCE DATA  
    SYMBOL  
    PARAMETER  
    collector-base voltage  
    collector-emitter voltage  
    collector current  
    CONDITIONS  
    MIN.  
    TYP.  
    MAX.  
    20  
    UNIT  
    VCBO  
    VCEO  
    IC  
    open emitter  
    open base  
    DC value  
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    V
    10  
    100  
    350  
    −
    V
    mA  
    mW  
    pF  
    Ptot  
    Cre  
    total power dissipation  
    feedback capacitance  
    transition frequency  
    up to Ts = 75 °C; note 1  
    IC = ic = 0; VCB = 8 V; f = 1 MHz  
    IC = 50 mA; VCE = 4 V; f = 2 GHz  
    0.85  
    7.5  
    16  
    fT  
    −
    GHz  
    dB  
    GUM  
    maximum unilateral  
    power gain  
    IC = 50 mA; VCE = 6 V;  
    Tamb = 25 °C; f = 1 GHz  
    −
    IC = 50 mA; VCE = 6 V;  
    Tamb = 25 °C; f = 2 GHz  
    −
    −
    10  
    −
    −
    dB  
    dB  
    F
    noise figure  
    Γs = Γopt; IC = 15 mA; VCE = 8 V;  
    Tamb = 25 °C; f = 1 GHz  
    1.7  
    Note  
    1. TS is the temperature at the soldering point of the collector tab.  
    1995 Sep 13  
    2
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    LIMITING VALUES  
    In accordance with the Absolute Maximum System (IEC 134).  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    MIN.  
    MAX. UNIT  
    VCBO  
    VCEO  
    VEBO  
    IC  
    collector-base voltage  
    collector-emitter voltage  
    emitter-base voltage  
    open emitter  
    open base  
    −
    20  
    V
    −
    10  
    V
    open collector  
    −
    2.5  
    V
    collector current  
    DC value, continuous  
    −
    100  
    350  
    +150  
    175  
    mA  
    mW  
    °C  
    °C  
    Ptot  
    Tstg  
    Tj  
    total power dissipation  
    storage temperature range  
    junction operating temperature  
    up to Ts = 75 °C; note 1  
    −
    −65  
    −
    THERMAL CHARACTERISTICS  
    SYMBOL  
    PARAMETER  
    VALUE  
    290  
    UNIT  
    Rth j-s  
    from junction to soldering point; note 1  
    K/W  
    Note  
    1. TS is the temperature at the soldering point of the collector tab.  
    CHARACTERISTICS  
    Tj = 25 °C unless otherwise specified.  
    SYMBOL  
    PARAMETER  
    collector leakage current  
    DC current gain  
    CONDITIONS  
    IE = 0; VCB = 5 V  
    MIN.  
    TYP.  
    MAX. UNIT  
    ICBO  
    hFE  
    Cc  
    −
    −
    100  
    −
    nA  
    IC = 50 mA; VCE = 5 V  
    40  
    −
    110  
    1.5  
    3.3  
    collector capacitance  
    emitter capacitance  
    feedback capacitance  
    transition frequency  
    IE = ie = 0; VCB = 8 V; f = 1 MHz  
    IC = ic = 0; VEB = 0.5 V; f = 1 MHz  
    IC = ic = 0; VCB = 8 V; f = 1 MHz  
    IC = 50 mA; VCE = 4 V; f = 2 GHz  
    −
    pF  
    Ce  
    −
    −
    pF  
    Cre  
    fT  
    −
    0.85  
    7.5  
    16  
    −
    pF  
    −
    −
    GHz  
    dB  
    GUM  
    maximum unilateral power gain  
    (note 1)  
    IC = 50 mA; VCE = 6 V;  
    Tamb = 25 °C; f = 1 GHz  
    −
    −
    IC = 50 mA; VCE = 6 V;  
    Tamb = 25 °C; f = 2 GHz  
    −
    −
    −
    −
    10  
    −
    −
    −
    −
    dB  
    dB  
    dB  
    dB  
    F
    noise figure  
    Γs = Γopt; IC = 15 mA; VCE = 8 V;  
    Tamb = 25 °C; f = 1 GHz  
    1.7  
    2.3  
    −51  
    Γs = Γopt; IC = 50 mA; VCE = 6 V;  
    Tamb = 25 °C; f = 2 GHz  
    d2  
    second order intermodulation  
    distortion  
    VCE = 6 V;Vo = 50 dBmV;  
    Note  
    2
    s21  
    1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log  
    dB.  
    ------------------------------------------------------------  
    (1 – s11 2) (1 – s22  
    )
    2
    1995 Sep 13  
    3
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    MBC983 - 2  
    MBB267  
    160  
    800  
    handbook, halfpage  
    handbook, halfpage  
    P
    tot  
    (mW)  
    h
    FE  
    600  
    120  
    80  
    400  
    200  
    0
    40  
    0
    40  
    80  
    120  
    0
    50  
    100  
    150  
    200  
    o
    T ( C)  
    s
    I
    (mA)  
    C
    VCE = 5 V.  
    Fig.4 DC current gain as a function of collector  
    current.  
    Fig.3 Power derating curve.  
    MCD155  
    MCD156  
    8
    1.2  
    handbook, halfpage  
    handbook, halfpage  
    f
    T
    C
    re  
    (pF)  
    (GHz)  
    6
    4
    2
    0
    0.8  
    0.4  
    0
    0
    2
    4
    6
    8
    10  
    (V)  
    0
    20  
    40  
    60  
    80  
    V
    I
    (mA)  
    CB  
    C
    IC = ic = 0; f = 1 MHz.  
    VCE = 4 V; Tamb = 25 °C; f = 2 GHz.  
    Fig.6 Transition frequency as a function of  
    collector current.  
    Fig.5 Feedback capacitance as a function of  
    collector-base voltage.  
    1995 Sep 13  
    4
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    MCD157  
    MCD158  
    50  
    20  
    handbook, halfpage  
    handbook, halfpage  
    gain  
    gain  
    (dB)  
    (dB)  
    MSG  
    G
    max  
    40  
    30  
    20  
    10  
    15  
    10  
    5
    G
    UM  
    G
    UM  
    MSG  
    G
    max  
    0
    0
    2
    4
    3
    0
    20  
    40  
    60  
    80  
    10  
    10  
    10  
    10  
    f (MHz)  
    I
    (mA)  
    C
    VCE = 4 V; f = 1 GHz.  
    VCE = 4 V; IC = 50 mA.  
    Fig.7 Gain as a function of collector current.  
    Fig.8 Gain as a function of frequency.  
    MCD159  
    MCD160  
    50  
    50  
    handbook, halfpage  
    gain  
    handbook, halfpage  
    gain  
    (dB)  
    (dB)  
    40  
    40  
    30  
    20  
    10  
    0
    G
    G
    UM  
    UM  
    MSG  
    MSG  
    30  
    20  
    10  
    G
    max  
    G
    max  
    0
    10  
    2
    4
    2
    4
    3
    3
    10  
    10  
    10  
    10  
    10  
    10  
    10  
    f (MHz)  
    f (MHz)  
    VCE = 6 V; IC = 50 mA.  
    VCE = 8 V; IC = 30 mA.  
    Fig.9 Gain as a function of frequency.  
    Fig.10 Gain as a function of frequency.  
    1995 Sep 13  
    5
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    MCD161  
    MCD162  
    4
    4
    handbook, halfpage  
    handbook, halfpage  
    f = 2 GHz  
    F
    F
    (dB)  
    (dB)  
    3
    2
    1
    3
    2
    1 GHz  
    I
    = 50 mA  
    C
    500 MHz  
    20 mA  
    1
    10 mA  
    0
    0
    10  
    2
    3
    4
    1
    10  
    100  
    10  
    10  
    f (MHz)  
    I
    (mA)  
    C
    VCE = 6 V.  
    VCE = 6 V.  
    Fig.11 Minimum noise figure as a function of  
    collector current.  
    Fig.12 Minimum noise figure as a function of  
    frequency.  
    MBB266  
    MBB268  
    45  
    35  
    handbook, halfpage  
    handbook, halfpage  
    d
    d
    2
    im  
    (dB)  
    (dB)  
    50  
    40  
    55  
    60  
    45  
    50  
    65  
    70  
    55  
    60  
    20  
    40  
    60  
    80  
    100  
    120  
    (mA)  
    20  
    40  
    60  
    80  
    100  
    120  
    (mA)  
    I
    I
    C
    C
    VCE = 8 V ; Vo = 700 mV; f(p+q−r) = 793.25 MHz; Tamb = 25 °C.  
    VCE = 8 V; Vo = 50 mV; f(p+q−r) = 810 MHz; Tamb = 25 °C.  
    Fig.13 Intermodulation distortion, typical values.  
    Fig.14 Second order intermodulation distortion,  
    typical values.  
    1995 Sep 13  
    6
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    1
    0.5  
    2
    MSG  
    23 dB  
    4 dB  
    3 dB  
    0.2  
    5
    2 dB  
    OPT  
    10  
    +
    j
    *
    F
    = 1.7 dB  
    min  
    0.5  
    0
    ∞
    0.2  
    1
    2
    5
    10  
    –
    j
    10  
    stability  
    circle  
    5
    0.2  
    2
    0.5  
    MCD163  
    1
    Zo = 50 Ω.  
    Maximum stable gain = 23 dB.  
    Fig.15 Noise circle figure.  
    1
    0.5  
    2
    5 dB  
    4 dB  
    0.2  
    5
    3 dB  
    10  
    OPT  
    + j  
    *
    F
    = 2.4 dB  
    0.5  
    min  
    0
    ∞
    0.2  
    1
    2
    5
    10  
    – j  
    *
    10  
    15 dB  
    14 dB  
    5
    0.2  
    G
    max  
    15.8 dB  
    2
    0.5  
    MCD164  
    1
    Zo = 50 Ω.  
    Fig.16 Noise circle figure.  
    7
    1995 Sep 13  
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    1
    0.5  
    2
    0.2  
    6 dB  
    5 dB  
    5
    10  
    + j  
    – j  
    4 dB  
    0.2  
    0.5  
    1
    2
    5
    10  
    0
    ∞
    OPT  
    *
    10  
    8 dB  
    F
    = 3.5 dB  
    min  
    9 dB  
    5
    0.2  
    *
    2
    0.5  
    G
    max  
    9.7 dB  
    MCD165  
    1
    Zo = 50 Ω.  
    Fig.17 Noise circle figure.  
    1
    0.5  
    2
    3 GHz  
    0.2  
    5
    10  
    +
    j
    0.2  
    0.5  
    1
    2
    5
    10  
    0
    ∞
    –
    j
    10  
    5
    0.2  
    40 MHz  
    2
    0.5  
    MCD166  
    1
    VCE = 6 V; IC = 50 mA.  
    Fig.18 Common emitter input reflection coefficient (S11).  
    8
    1995 Sep 13  
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    o
    90  
    o
    o
    45  
    135  
    40 MHz  
    100  
    80  
    60  
    40  
    20  
    o
    0
    o
    180  
    3 GHz  
    _
    o
    _
    o
    45  
    135  
    _
    o
    MCD167  
    90  
    VCE = 6 V; IC = 50 mA.  
    Fig.19 Common emitter forward transmission coefficient (S21).  
    o
    90  
    o
    o
    45  
    3 GHz  
    135  
    0.20 0.16 0.12 0.08 0.04  
    o
    o
    0
    40 MHz  
    180  
    _
    o
    _
    o
    45  
    135  
    MCD169  
    _
    o
    90  
    VCE = 6 V; IC = 50 mA.  
    Fig.20 Common emitter reverse transmission coefficient (S12).  
    9
    1995 Sep 13  
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    1
    0.5  
    2
    0.2  
    5
    10  
    +
    j
    0.2  
    0.5  
    3 GHz  
    1
    2
    5
    10  
    0
    ∞
    –
    j
    10  
    5
    0.2  
    40 MHz  
    2
    0.5  
    MCD168  
    1
    VCE = 6 V; IC = 50 mA.  
    Fig.21 Common emitter output reflection coefficient (S22).  
    1995 Sep 13  
    10  
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    SPICE parameters for BFQ195 crystal  
    SEQUENCE No. PARAMETER VALUE  
    UNIT  
    C
    1
    IS  
    1.972  
    150.0  
    990.8  
    54.72  
    30.00  
    47.82  
    1.580  
    165.4  
    993.9  
    2.351  
    9.967  
    3.510  
    1.124  
    5.000  
    1.000  
    5.000  
    368.1  
    937.2  
    0.000  
    1.110  
    3.000  
    3.388  
    600.0  
    302.9  
    11.06  
    30.02  
    1.649  
    401.9  
    0.000  
    1.190  
    160.1  
    89.44  
    130.0  
    2.148  
    0.000  
    750.0  
    0.000  
    785.9  
    fA  
    −
    handbook, halfpage  
    cb  
    2
    BF  
    3
    NF  
    m
    L
    B
    L1  
    L2  
    4
    VAF  
    IKF  
    ISE  
    NE  
    V
    B
    B'  
    C'  
    C
    5
    A
    E'  
    6
    fA  
    −
    C
    C
    be  
    ce  
    7
    L
    E
    8
    BR  
    −
    MBC964  
    9
    NR  
    m
    L3  
    10  
    VAR  
    IKR  
    ISC  
    NC  
    V
    11  
    A
    E
    12  
    aA  
    −
    13  
    14  
    RB  
    Ω
    QLB = 50; QLE = 50.  
    QLB,E (f) = QLB,E √ (f/Fc).  
    Fc = scaling frequency = 1000 MHz.  
    15  
    IRB  
    RBM  
    RE  
    µA  
    Ω
    16  
    17  
    mΩ  
    mΩ  
    −
    Fig.22 Package equivalent circuit SOT143;  
    SOT143R.  
    18  
    RC  
    19 (note 1)  
    XTB  
    EG  
    20 (note 1)  
    EV  
    −
    21 (note 1)  
    XTI  
    CJE  
    VJE  
    MJE  
    TF  
    List of components (see Fig.22)  
    22  
    pF  
    mV  
    m
    DESIGNATION  
    Cbe  
    VALUE  
    UNIT  
    23  
    84  
    fF  
    24  
    Ccb  
    Cce  
    L1  
    L2  
    L3  
    LB  
    17  
    fF  
    25  
    ps  
    −
    191  
    fF  
    26  
    XTF  
    VTF  
    ITF  
    27  
    V
    0.12  
    0.21  
    0.06  
    0.95  
    0.40  
    nH  
    nH  
    nH  
    nH  
    nH  
    28  
    mA  
    deg  
    pF  
    mV  
    m
    29  
    PTF  
    CJC  
    VJC  
    MJC  
    XCJC  
    TR  
    30  
    31  
    LE  
    32  
    33  
    m
    34  
    ns  
    F
    35 (note 1)  
    36 (note 1)  
    37 (note 1)  
    38  
    CJS  
    VJS  
    MJS  
    FC  
    mV  
    −
    m
    Note  
    1. These parameters have not been extracted,  
    the default values are shown.  
    1995 Sep 13  
    11  
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    PACKAGE OUTLINES  
    3.0  
    2.8  
    0.150  
    B
    1.9  
    0.090  
    A
    B
    M
    0.75  
    0.2  
    A
    0.60  
    4
    3
    0.1  
    max  
    o
    10  
    max  
    2.5  
    max  
    1.4  
    1.2  
    o
    10  
    max  
    1
    2
    1.1  
    max  
    o
    0.1 M  
    A
    B
    MBC845  
    30  
    max  
    0
    0.1  
    0
    0.1  
    0.88  
    0.48  
    1.7  
    TOP VIEW  
    Dimensions in mm.  
    Fig.23 SOT143.  
    3.0  
    2.8  
    B
    0.150  
    0.090  
    1.9  
    A
    M
    0.2  
    0.40  
    0.25  
    A
    3
    4
    0.1  
    max  
    o
    10  
    2.5  
    max  
    1.4  
    1.2  
    max  
    o
    10  
    max  
    2
    1
    1.1  
    max  
    0.48  
    0.38  
    0.88  
    0.78  
    o
    MBC844  
    30  
    max  
    1.7  
    B
    0.1 M  
    TOP VIEW  
    Dimensions in mm.  
    Fig.24 SOT143R.  
    1995 Sep 13  
    12  
    Philips Semiconductors  
    Product specification  
    BFG197; BFG197/X;  
    BFG197/XR  
    NPN 7 GHz wideband transistor  
    DEFINITIONS  
    Data sheet status  
    Objective specification  
    Preliminary specification  
    Product specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    1995 Sep 13  
    13  
    配单直通车
    BFG197/X产品参数
    型号:BFG197/X
    是否Rohs认证： 不符合
    生命周期：Transferred
    IHS 制造商：PHILIPS SEMICONDUCTORS
    包装说明：,
    Reach Compliance Code：unknown
    风险等级：5.69
    最大集电极电流 (IC)：0.1 A
    配置：Single
    最小直流电流增益 (hFE)：40
    JESD-609代码：e0
    最高工作温度：150 °C
    极性/信道类型：NPN
    最大功率耗散 (Abs)：0.3 W
    子类别：Other Transistors
    表面贴装：YES
    端子面层：Tin/Lead (Sn/Pb)
    标称过渡频率 (fT)：7500 MHz
    Base Number Matches：1
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