BGA420H6327应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

BGA420



in SIEGET 25-Technologie

Si-MMIC-Amplifier

• Cascadable 50 Ω-gain block

• Unconditionally stable

3

2

1

4

2

• Gain |S | = 13 dB at 1.8 GHz

21

IP

= +13 dBm at 1.8 GHz

3out

(V = 3 V, I = typ. 6.7 mA)

D

• Noise figure NF = 2.3 dB at 1.8 GHz

• Reverse isolation > 28 dB and

V_D

4

return loss IN / OUT > 12 dB at 1.8 GHz

• Pb-free (RoHS compliant) package

3

OUT

1)

Circuit Diagram

1

IN

2

GND

EHA07385

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BGA420

Marking

BLs

Pin Configuration

2, GND 3, OUT 4, VD

Package

SOT343

1, IN

Maximum Ratings

Parameter

Device current

Device voltage

Total power dissipation

Symbol

I

D

Value

15

6

90

Unit

mA

V

P

D

mW

tot

T = 110 °C

S

0

150

dBm

°C

RF input power

P

RFin

Junction temperature

Ambient temperature

Storage temperature

T

j

T

-65 ... 150

A

T

stg

Thermal Resistance

Junction - soldering point

2)

K/W

R

≤ 410

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-07-12

1

BGA420

Electrical Characteristics at T = 25 °C, unless otherwise specified.

A

Parameter

Symbol

Values

Unit

min.

typ. max.

AC characteristics V = 3 V, Z = 50 Ω

D

o

5.4

6.7

8

mA

dB

Device current

Insertion power gain

f = 0.1 GHz

f = 1 GHz

f = 1.8 GHz

Reverse isolation

f = 1.8 GHz

Noise figure

f = 0.1 GHz

f = 1 GHz

f = 1.8 GHz

Intercept point at the output

f = 1 GHz

1dB compression point

f = 1 GHz

Return loss input

f = 1.8 GHz

Return loss output

f = 1.8 GHz

I

D

|S |

2

21

17

15

11

25

19

17

13

28

-

S12

NF

-

1.9

2.2

2.3

13

2.3

2.6

2.7

-

10

dBm

dB

IP

3out

-6

8

-2.5

11

-

P

-1dB

RL

in

12

16

out

Typical biasing configuration

+V_D

100 pF

RF OUT

100 pF

10 nF

4

3

BGA 420

1

2

100 pF

GND

RF IN

EHA07386

Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device

to provide a low impedance path.

2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin

boards are recommended to minimize the parasitic inductance to ground.

2007-07-12

2

BGA420

Typical S-Parameters at T = 25 °C

A

f

S

11

21

12

22

GHz MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

V = 3 V, Z = 50 Ω

D

0.1

0.5

0.8

1

o

0.5686

0.5066

0.4404

0.3904

0.2841

0.2343

0.2136

0.2062

0.1688

0.1558

-8.5

-19.2

-28.7

-34.6

-50.5

-60.6

-64.1

-68.4

-89.7

-104.9

9.314

8.393

7.352

6.69

5.244

4.567

4.355

4.165

3.417

2.861

170.6

149.4

135.2

126.8

111.1

104

0.0268

0.0248

0.0236

0.024

0.0314

0.0378

0.0406

0.0426

0.0549

0.0682

12.7

11.7

25.6

35.9

57.2

63.5

66.1

67.2

71.4

73.1

0.2808

0.2613

0.2361

0.2144

0.1398

0.0979

0.0838

0.0689

0.0224

0.0284

-8.6

-3.8

-6.7

-9

-15

1.5

1.8

1.9

2

2.4

3

-18.2

-21.5

-22.2

-48

102

99.7

91.7

85.3

-147.5

Spice-model BGA 420

+V

BGA 420-chip

T1

T501

including parasitics

14

R

C

14.5kΩ

140Ω

2.4kΩ

2.3pF

0.2pF

0.6pF

0.1pF

1

2

R₂

13

3

OUT

R₁

R₃

1

P1

P2

P3

P4

C₁

11

C_P3

C_P4

IN

T1

C_P1

C_P2

12

GND

EHA07387

2007-07-12

3

BGA420

Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :

83.23

0.16493

10.526

0.25052

15

1.9289

0.70367

0.3641

0

1.0405

15.761

0.96647

IS =

VAF =

NE =

0.21024

39.251

fA

V

BF =

-

A

NF =

-

fA

IKF =

BR =

IKR =

RB =

ISE =

NR =

ISC =

IRB =

RC =

MJE =

VTF =

CJC =

XCJC =

VJS =

EG =

TNOM

1.7763

34.368

1.3152

1.3491

3.7265

4.5899

1.3364

0.99532

1.4935

0

-

V

-

A

-

0.037223 fA

VAR =

NC =

RBM =

CJE =

TF =

ITF =

VJC =

TR =

0.21215

0.12691

0.37747

0.19762

96.941

0.08161

0.75

A

-

Ω

RE =

Ω

fF

ps

mA

V

-

deg

VJE =

XTF =

PTF =

MJC =

CJS =

XTB =

FC =

-

V

fF

0.48652

0

-

fF

-

ns

V

eV

K

1.11

300

MJS =

XTI =

-

3

0.99469

C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :

fA

2

RS =

20

Ω

IS =

N =

1.02

-

All parameters are ready to use, no scaling is necessary

Package Equivalent Circuit:

0.36

0.4

nH

L =

BI

L ₂

L

=

+V

BO

0.3

L =

C₁

C₃

L ₁

EI

C_CB

0.15

L

=

EO

C₂

0.36

14

L =

CI

0.4

95

6

nH

L

=

L _BO

L _BI

L _CI

L _CO

CO

11

BGA 420

Chip

13

IN

OUT

fF

C

=

BE

CB

CE

1

2

fF

C’-E’-

Diode

12

132

28

88

8

fF

C_BE

C_CE

C =

fF

C =

fF

L _EI

C =

fF

3

L =

0.6

0.4

nH

1

L _EO

GND

L =

2

EHA07388

Valid up to 3GHz

Extracted on behalf of Infineon Technologies AG by:

Institut für Mobil-und Satellitentechnik (IMST)

For examples and ready to use parameters please contact your local Infineon Technologies distributor

or sales office to obtain a Infineon Technologies CD-ROM or see Internet:

http://www.infineon.com/silicondiscretes

2007-07-12

4

BGA420

2

Insertion power gain |S | = f (f)

21

V = 3 V

D

V , I = parameter

T = parameter

D

A

25

22

dB

VD=5V, ID=12.4mA

VD=4V, ID=9.4mA

VD=3V, ID=6.4mA

VD=2V, ID=3,4mA

TA=-20°C

TA=+25°C

TA=+75°C

dB

18

16

14

12

10

8

15

10

5

6

4

2

0

10 ^-1

0

10 ^-1

10 ⁰

10 ¹

10 ⁰

10 ¹

GHz

f

Noise figure NF = f (f)

V = 3V

D

V ,I = parameter

T = parameter

D D

A

5

3.5

dB

TA=+75°C

TA=+25°C

TA=-20°C

dB

VD=5V, ID=12.4mA

VD=3V, ID=6.4mA

2.5

2

3

2

1

0

1.5

1

0.5

0

10 ^-1

10 ⁰

10 ¹

10 ⁰

10 ¹

GHz

f

2007-07-12

5

BGA420

Intercept point at the output

IP = f (f)

Intercept point at the output

IP = f (f), V = 3V

3out

D

V ,I = parameter

T = parameter

D D

A

20

12

dBm

VD=5V, ID=12.4mA

VD=4V, ID=9.4mA

VD=3V, ID=6.4mA

VD=2V, ID=3.4mA

dBm

10

9

8

7

6

5

4

3

2

1

16

14

12

10

8

TA=-20°C

TA=+25°C

TA=75°C

6

4

2

0

10 ^-1

0

10 ^-1

10 ⁰

GHz

10 ¹

10 ⁰

10 ¹

GHz

f

2007-07-12

6

Package SOT343

BGA420

Package Outline

±0.1

0.9

±0.2

2

0.1 MAX.

0.1

1.3

A

4

1

3

2

0.15

+0.1

-0.05

0.3

0.15

-0.05

+0.1

0.6

4x

-0.05

M

0.2

A

M

0.1

Foot Print

0.6

1.15

0.9

Marking Layout (Example)

Manufacturer

2005, June

Date code (YM)

BGA420

Type code

Pin 1

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

0.2

4

2.15

Pin 1

1.1

2007-07-12

7

BGA420

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.

2007-07-12

8

型号:	BGA420H6327XTSA1
是否Rohs认证：	符合
生命周期：	Not Recommended
IHS 制造商：	INFINEON TECHNOLOGIES AG
包装说明：	ROHS COMPLIANT, SOT-343, 4 PIN
Reach Compliance Code：	compliant
Factory Lead Time：	6 weeks
风险等级：	7.97
Samacsys Description：	BGA420H6327XTSA1 Infineon, RF Amplifier, 19 dB @ 0.1 GHz 3 GHz, 4-Pin SOT-343
特性阻抗：	50 Ω
构造：	COMPONENT
增益：	11 dB
最大输入功率 (CW)：
JESD-609代码：	e3
最大工作频率：	1800 MHz
最小工作频率：	100 MHz
最高工作温度：	150 °C
最低工作温度：	-65 °C
射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Tin (Sn)

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