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    • BLV12图

    • 深圳市得捷芯城科技有限公司

       该会员已使用本站11年以上
    • BLV12
    • 数量1 
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    • 北京齐天芯科技有限公司

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    • 深圳市芯福林电子有限公司

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    • 上海熠富电子科技有限公司

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    • 深圳市一线半导体有限公司

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    • 深圳市创思克科技有限公司

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    产品型号BLV12的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    BLV12  
    VHF power transistor  
    September 1991  
    Product specification  
    Philips Semiconductors  
    Product specification  
    VHF power transistor  
    BLV12  
    FEATURES  
    QUICK REFERENCE DATA  
    RF performance at Tmb = 25 °C in a common emitter test circuit.  
    • Emitter-ballasting resistors for an  
    optimum temperature profile  
    f
    VCE  
    (V)  
    PL  
    (W)  
    GP  
    (dB)  
    ηC  
    (%)  
    MODE OF OPERATION  
    c.w. class-B  
    (MHz)  
    • Excellent reliability  
    • Withstands full load mismatch.  
    175  
    12.5  
    30  
    > 9  
    > 60  
    DESCRIPTION  
    WARNING  
    NPN silicon planar epitaxial transistor  
    encapsulated in a 4-lead SOT123  
    flange envelope with a ceramic cap. It  
    is designed for common emitter,  
    class-B operation in mobile VHF  
    transmitters with a supply voltage of  
    12.5 V. All leads are isolated from the  
    mounting flange.  
    Product and environmental safety - toxic materials  
    This product contains beryllium oxide. The product is entirely safe provided  
    that the BeO disc is not damaged. All persons who handle, use or dispose of  
    this product should be aware of its nature and of the necessary safety  
    precautions. After use, dispose of as chemical or special waste according to  
    the regulations applying at the location of the user. It must never be thrown  
    out with the general or domestic waste.  
    PIN CONFIGURATION  
    PINNING - SOT123  
    PIN  
    DESCRIPTION  
    collector  
    alfpage  
    1
    2
    3
    4
    1
    4
    emitter  
    base  
    c
    handbook, halfpage  
    emitter  
    b
    e
    MBB012  
    2
    3
    MSB057  
    Fig.1 Simplified outline and symbol.  
    September 1991  
    2
    Philips Semiconductors  
    Product specification  
    VHF power transistor  
    BLV12  
    LIMITING VALUES  
    In accordance with the Absolute Maximum System (IEC 134).  
    SYMBOL  
    VCBO  
    PARAMETER  
    collector-base voltage  
    CONDITIONS  
    open emitter  
    MIN.  
    MAX.  
    36  
    UNIT  
    −
    −
    −
    −
    −
    V
    VCEO  
    VEBO  
    IC, IC(AV)  
    ICM  
    collector-emitter voltage  
    emitter-base voltage  
    collector current  
    open base  
    16  
    3
    V
    V
    A
    A
    open collector  
    DC or average value  
    6
    collector current  
    peak value  
    18  
    f > 1 MHz  
    Ptot  
    total power dissipation  
    RF operation;  
    f > 1 MHz;  
    −
    100  
    W
    Tmb = 25 °C  
    Tstg  
    Tj  
    storage temperature range  
    −65  
    150  
    200  
    °C  
    °C  
    junction operating temperature  
    −
    MRA372  
    120  
    handbook, halfpage  
    P
    tot  
    (W)  
    100  
    II  
    I
    80  
    60  
    40  
    20  
    0
    0
    20  
    40  
    60  
    80  
    100  
    T
    120  
    ( C)  
    o
    h
    (I) Continuous DC operation.  
    (II) Short time operation during mismatch  
    (f > 1 MHz)  
    Fig.2 Power/temperature derating curve.  
    THERMAL RESISTANCE  
    SYMBOL  
    Rth j-mb(RF)  
    PARAMETER  
    CONDITIONS  
    MAX.  
    UNIT  
    from junction to mounting base  
    Ptot = 100 W;  
    1.75  
    K/W  
    Tmb = 25 °C  
    Rth mb-h  
    from mounting base to heatsink  
    0.3  
    K/W  
    September 1991  
    3
    Philips Semiconductors  
    Product specification  
    VHF power transistor  
    BLV12  
    CHARACTERISTICS  
    Tj = 25 °C.  
    SYMBOL  
    V(BR)CBO  
    PARAMETER  
    collector-base breakdown voltage  
    CONDITIONS  
    open emitter;  
    Ic = 10 mA  
    MIN. TYP. MAX. UNIT  
    36  
    16  
    3
    −
    −
    V
    V(BR)CEO  
    V(BR)EBO  
    ICES  
    collector-emitter breakdown voltage open base;  
    Ic = 25 mA  
    −
    −
    V
    emitter-base breakdown voltage  
    collector-emitter leakage current  
    DC current gain  
    open collector;  
    IE = 2 mA  
    −
    −
    V
    VBE = 0;  
    VCE = 16 V  
    −
    −
    10  
    −
    mA  
    hFE  
    VCE = 5 V;  
    IC = 4 A  
    25  
    −
    35  
    1.6  
    fT  
    transition frequency  
    VCE = 12.5 V;  
    IE = 4 A;  
    f = 500 MHz  
    −
    GHz  
    pF  
    Cc  
    collector capacitance  
    VCB = 12.5 V;  
    IE = Ie = 0;  
    f = 1 MHz  
    −
    −
    −
    90  
    60  
    2
    100  
    70  
    −
    Cre  
    Cc-f  
    feedback capacitance  
    collector-flange capacitance  
    VCE = 12.5 V;  
    IC = 0;  
    f = 1 MHz  
    pF  
    f = 1 MHz  
    pF  
    MRA378  
    MRA374.1  
    50  
    250  
    handbook, halfpage  
    handbook, halfpage  
    C
    c
    h
    FE  
    (pF)  
    40  
    30  
    20  
    10  
    200  
    V
    =
    CE  
    12.5 V  
    150  
    100  
    50  
    V
    = 5 V  
    CE  
    0
    0
    0
    4
    8
    12  
    16  
    0
    4
    8
    12  
    16  
    I
    (A)  
    C
    V
    (V)  
    CB  
    IE = ie = 0; f = 1 MHz.  
    Fig.3 DC current gain as a function of collector  
    current, typical values.  
    Fig.4 Collector capacitance as a function of  
    collector-base voltage, typical values.  
    September 1991  
    4
    Philips Semiconductors  
    Product specification  
    VHF power transistor  
    BLV12  
    MRA375  
    2
    handbook, halfpage  
    f
    T
    (GHz)  
    1.5  
    1
    0.5  
    0
    0
    2
    4
    6
    8
    10  
    I
    (A)  
    E
    VCB = 12.5 V.  
    Fig.5 Transition frequency as a function of emitter  
    current, typical values.  
    September 1991  
    5
    Philips Semiconductors  
    Product specification  
    VHF power transistor  
    BLV12  
    APPLICATION INFORMATION  
    RF performance at Tmb = 25 °C in a common emitter test circuit.  
    f
    VCE  
    (V)  
    PL  
    (W)  
    GP  
    (dB)  
    ηC  
    (%)  
    MODE OF OPERATION  
    c.w. class-B  
    (MHz)  
    175  
    12.5  
    30  
    > 9  
    > 60  
    typ. 9.8  
    typ. 66  
    MRA371  
    MRA367  
    50  
    handbook, halfpage  
    handbook, halfpage  
    η
    G
    P
    P
    L
    (%)  
    (dB)  
    12  
    (W)  
    40  
    η
    70  
    50  
    30  
    10  
    G
    P
    30  
    20  
    10  
    8
    4
    0
    0
    0
    10  
    2
    4
    6
    8
    20  
    30  
    40  
    P
    (W)  
    IN  
    P
    (W)  
    L
    Class-B operation; VCE = 12.5 V; f = 175 MHz.  
    Class-B operation; VCE = 12.5 V; f = 175 MHz.  
    Fig.6 Gain and efficiency as functions of load  
    power, typical values.  
    Fig.7 Load power as a function of drive power,  
    typical values.  
    Ruggedness in class-B operation  
    The BLV12 is capable of withstanding a full load mismatch  
    corresponding to VSWR = 50:1 through all phases at rated  
    output power, up to a supply voltage of 15.5 V, and  
    f = 175 MHz.  
    September 1991  
    6
    Philips Semiconductors  
    Product specification  
    VHF power transistor  
    BLV12  
    C6a  
    C7  
    L5  
    L7  
    C3a  
    50 Ω  
    T.U.T.  
    C1  
    L1  
    50 Ω  
    C6b  
    C8  
    L4  
    C3b  
    L6  
    C4  
    C2  
    L2  
    C5  
    R2  
    R1  
    L3  
    L8  
    +V  
    MGP247  
    CC  
    Fig.8 Class-B test circuit at f = 175 MHz.  
    List of components (see test circuit)  
    COMPONENT  
    DESCRIPTION  
    VALUE  
    DIMENSIONS CATALOGUE NO.  
    C1  
    film dielectric trimmer  
    2.5 to 20 pF  
    4 to 40 pF  
    47 pF  
    2222 809 07004  
    2222 809 07008  
    C2, C8  
    C3a, C3b  
    C4  
    film dielectric trimmer  
    500 V ceramic capacitor  
    500 V ceramic capacitor  
    polyester capacitor  
    120 pF  
    C5  
    100 nF  
    C6a, C6b  
    C7  
    500 V ceramic capacitor  
    film dielectric trimmer  
    8.2 pF  
    5 to 60 pF  
    2222 809 07011  
    L1  
    1 turn enamelled 1.6 mm copper wire  
    int. dia. 9 mm;  
    leads 2 × 5 mm  
    L2  
    7 turns closely wound enamelled 0.5 mm 100 nH  
    copper wire  
    int. dia. 3 mm;  
    leads 2 × 5 mm  
    L3, L8  
    L4, L5  
    grade 3B Ferroxcube wideband HF choke  
    stripline (note 1)  
    4312 020 36640  
    12 mm × 6 mm;  
    note 2  
    L6  
    L7  
    2 turns enamelled 1.6 mm copper wire  
    2 turns enamelled 1.6 mm copper wire  
    int. dia. 5 mm;  
    length 6 mm;  
    leads 2 × 5 mm  
    int. dia. 4.5 mm;  
    length 6 mm;  
    leads 2 × 5 mm  
    R1  
    R2  
    0.25 W carbon resistor  
    0.25 W carbon resistor  
    10 Ω, 5%  
    4.7 Ω, 5%  
    Notes  
    1. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric, thickness 1⁄16 inch.  
    2. Taps for capacitors C3a and C3b are situated 5 mm from the transistor.  
    September 1991  
    7
    Philips Semiconductors  
    Product specification  
    VHF power transistor  
    BLV12  
    150  
    72  
    L3  
    L8  
    +V  
    CC  
    C4  
    L6  
    R1  
    L2  
    C5  
    R2  
    C3a  
    C6a  
    C6b  
    L5  
    L1  
    C1  
    C2  
    C7  
    C8  
    L7  
    L4  
    C3b  
    rivet  
    MGP245  
    The circuit and components are situated on one side of an epoxy fibre-glass board; the other side is unetched  
    and serves as a ground plane. Earth connections are made by means of hollow rivets and copper straps under  
    the emitters, to provide a direct contact between the component side and the ground plane.  
    Fig.9 Component layout for 175 MHz class-B test circuit.  
    8
    September 1991  
    Philips Semiconductors  
    Product specification  
    VHF power transistor  
    BLV12  
    MRA369  
    MRA370  
    3
    4
    handbook, halfpage  
    handbook, halfpage  
    Z
    L
    Z
    i
    (Ω)  
    (Ω)  
    3
    2
    R
    L
    2
    r
    i
    1
    1
    0
    x
    i
    X
    L
    -1  
    -2  
    0
    100  
    150  
    200  
    250  
    100  
    150  
    200  
    250  
    f (MHz)  
    f (MHz)  
    Class-B operation; VCE = 12.5 V; PL = 30 W.  
    Class-B operation; VCE = 12.5 V; PL = 30 W.  
    Fig.10 Input impedance (series components) as a  
    function of frequency, typical values.  
    Fig.11 Load impedance (series components) as a  
    function of frequency, typical values.  
    MRA368  
    handbook, halfpage  
    G
    P
    (dB)  
    15  
    10  
    handbook, halfpage  
    5
    0
    Z
    i
    Z
    MBA451  
    L
    100  
    150  
    200  
    250  
    f (MHz)  
    Class-B operation; VCE = 12.5 V; PL = 30 W.  
    Fig.12 Definition of transistor impedance.  
    Fig.13 Power gain as a function of frequency, typical  
    values.  
    September 1991  
    9
    Philips Semiconductors  
    Product specification  
    VHF power transistor  
    BLV12  
    PACKAGE OUTLINE  
    Flanged ceramic package; 2 mounting holes; 4 leads  
    SOT123A  
    D
    A
    F
    q
    C
    M
    B
    U
    1
    w
    2
    C
    c
    H
    b
    L
    4
    3
    A
    α
    p
    U
    3
    U
    2
    w
    M
    A
    B
    1
    1
    2
    H
    Q
    0
    5
    10 mm  
    scale  
    DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
    c
    A
    b
    D
    D
    F
    H
    L
    p
    Q
    q
    U
    U
    U
    w
    w
    2
    α
    UNIT  
    mm  
    1
    1
    2
    3
    1
    5.82  
    5.56  
    9.63  
    9.42  
    7.47  
    6.37  
    9.73  
    9.47  
    2.72 20.71 5.61  
    2.31 19.93 5.16  
    3.33  
    3.04  
    4.63  
    4.11  
    25.15 6.61  
    24.38 6.09  
    9.78  
    9.39  
    0.18  
    0.10  
    18.42  
    0.725  
    0.51 1.02  
    0.02 0.04  
    45°  
    0.229  
    0.219  
    0.397  
    0.371  
    0.294  
    0.251  
    0.383  
    0.373  
    0.107 0.815 0.221 0.131  
    0.091 0.785 0.203 0.120  
    0.26 0.385  
    0.24 0.370  
    0.007  
    0.004  
    0.182  
    0.162  
    0.99  
    0.96  
    inches  
    REFERENCES  
    EUROPEAN  
    PROJECTION  
    OUTLINE  
    VERSION  
    ISSUE DATE  
    IEC  
    JEDEC  
    EIAJ  
    SOT123A  
    97-06-28  
    September 1991  
    10  
    Philips Semiconductors  
    Product specification  
    VHF power transistor  
    BLV12  
    DEFINITIONS  
    Data Sheet Status  
    Objective specification  
    Preliminary specification  
    Product specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    September 1991  
    11  
    配单直通车
    BLV12产品参数
    型号:BLV12
    是否Rohs认证： 不符合
    生命周期：Transferred
    IHS 制造商：NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
    包装说明：,
    Reach Compliance Code：unknown
    风险等级：5.92
    最大集电极电流 (IC)：6 A
    配置：Single
    最小直流电流增益 (hFE)：25
    JESD-609代码：e0
    最高工作温度：200 °C
    极性/信道类型：NPN
    最大功率耗散 (Abs)：100 W
    子类别：Other Transistors
    表面贴装：NO
    端子面层：Tin/Lead (Sn/Pb)
    标称过渡频率 (fT)：1600 MHz
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