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DISCRETE SEMICONDUCTORS

DATA SHEET

BLV193

UHF power transistor

March 1993

Product speciﬁcation

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

FEATURES

QUICK REFERENCE DATA

RF performance at T_h= 25 °C in a common emitter test circuit.

• Emitter ballasting resistors for an

optimum temperature profile

d_im

(dB)

(note 1)

MODE OF

OPERATION

f

V_CE

(V)

P_L

(W)

G_p

(dB)

η_C

(%)

• Gold metallization ensures

excellent reliability.

(MHz)

c.w. class-AB

c.w. class-A

900

12.5

12

≥ 6.5

≥ 50

−

DESCRIPTION

6 (PEP) typ. 11

−

typ. −30

NPN silicon planar epitaxial transistor

intended for common emitter class-A

and class-AB operation in the

Note

1. 2-tone measurement, f_p= 900 MHz, f_q= 901 MHz.

900 MHz communications band.

PIN CONFIGURATION

The transistor has a SOT171 flange

envelope with a ceramic cap. All

leads are isolated from the mounting

base.

halfpage

PINNING - SOT171

c

1

2

4

6

handbook, halfpage

DESCRIPTION

emitter

3

5

b

1

2

3

4

5

6

emitter

base

e

MBB012

collector

emitter

MBA931 - 1

Top view

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

March 1993

2

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

V_CBO

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

36

UNIT

−

V

V_CEO

V_EBO

I_C

collector-emitter voltage

emitter-base voltage

collector current

open base

16

V

open collector

3

V

DC or average value

up to T_mb= 25 °C

3.5

44

A

P_tot

T_stg

T_j

total power dissipation

storage temperature range

junction temperature

W

°C

−65

150

200

−

MRA553

MRA552

60

10

handbook, halfpage

P

tot

I

(W)

C

o

T

= 25

C

mb

(A)

(2)

(1)

o

T

= 70 C

h

40

1

20

0

−1

10

0

20

40

60

80

100

T

120

2

1

10

V

(V)

o

CE

( C)

h

(1) Continuous operation.

(2) Short time operation during mismatch.

Fig.2 DC SOAR.

Fig.3 Power derating curves.

THERMAL RESISTANCE

SYMBOL

THERMAL

RESISTANCE

PARAMETER

CONDITIONS

R_{th j-mb}

R_{th mb-h}

from junction to mounting base

from mounting base to heatsink

P_dis= 44 W; T_mb= 25 °C

4.0 K/W

0.4 K/W

March 1993

3

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

collector-base breakdown voltage

CONDITIONS

open emitter;

I_c= 20 mA

MIN. TYP. MAX. UNIT

V_(BR)CBO

36

16

3

−

1

−

V

V_(BR)CEO

V_(BR)EBO

I_CES

collector-emitter breakdown voltage open base;

I_c= 40 mA

−

V

emitter-base breakdown voltage

collector-emitter leakage current

DC current gain

open collector;

I_E= 0.5 mA

−

V

V_CE= 16 V;

V_BE= 0

−

mA

h_FE

V_CE= 10 V;

I_c= 1.2 A;

note 1

25

60

C_c

collector capacitance

V_CB= 12.5 V;

I_E= I_e= 0;

f = 1 MHz

−

24.5

13

2

−

pF

C_re

feedback capacitance

V_CE= 12.5 V;

I_c= 0;

f = 1 MHz

C_c-mb

collector-mounting base capacitance

Note

1. Measured under pulse conditions: t_p≤ 200 µs; δ ≤ 0.02.

March 1993

4

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

MRA559

MRA546

100

50

handbook, halfpage

C

c

h

FE

(pF)

40

80

V

= 12.5 V

10 V

CE

60

40

20

0

30

20

10

0

4

8

12

16

0

2

4

6

I

(A)

V

(V)

C

CB

I_E= i_e= 0; f = 1 MHz.

Measured under pulse conditions: t_p≤ 200 µs; δ ≤ 0.02.

Fig.4 DC current gain as a function of collector

current, typical values.

Fig.5 Collector capacitance as a function of

collector-base voltage, typical values.

MRA554

40

handbook, halfpage

C

re

(pF)

30

20

10

0

4

8

12

16

V

(V)

CE

f = 1 MHz.

Fig.6 Feedback capacitance as a function of

collector-emitter voltage, typical values.

March 1993

5

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

APPLICATION INFORMATION

RF performance at T_h= 25 °C in a common emitter test circuit; R_{th j-mb}= 0.4 K/W.

d_im

(dB)

(note 1)

f

V_CE

(V)

I_CQ

(A)

P_L

(W)

G_P

(dB)

η_c

(%)

MODE OF OPERATION

(MHz)

c.w. class-AB

900

12.5

12

0.01

1.3

12

≥ 6.5

typ. 7.5

> 50

typ. 60

−

c.w. class-A

6 (PEP) typ. 11

−

typ. −30

Note

1. 2-tone measurement, f_p= 900 MHz, f_q= 901 MHz.

MRA551

MRA555

100

16

10

handbook, halfpage

η

G

C

(%)

80

P

p

L

(dB)

8

(W)

G

p

12

60

40

20

0

6

4

2

η

C

8

4

0

1

2

3

4

8

12

16

P

(W)

P

(W)

D

L

Class-AB operation; V_CE= 12.5 V; f = 900 MHz;

I_CQ= 10 mA.

Class-AB operation; V_CE= 12.5 V; f = 900 MHz;

I_CQ= 10 mA.

Fig.7 Gain and efficiency as functions of load

power, typical values.

Fig.8 Load power as a function of drive power,

typical values.

Ruggedness in class-AB operation

The BLV193 is capable of withstanding a load mismatch

corresponding to VSWR = 10:1 through all phases under

the following conditions:

V_CE= 15.5 V, f = 900 MHz,

T_h= 25 °C, R_{th j-mb}= 0.4 K/W, and

rated output power.

March 1993

6

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

MRA558

MRA550

16

12

handbook, halfpage

P

L(PEP)

(W)

10

G

p

(dB)

12

8

6

4

2

8

4

0

0.2

0.4

0.6

0.8

1

0

4

8

12

P

(W)

L(PEP)

P

(W)

D(PEP)

Class-A operation; V_CE= 12 V; I_C= 1.3 A;

f_p= 900 MHz; f_q= 901 MHz.

Class-A operation; V_CE= 12 V; I_C= 1.3 A;

f_p= 900 MHz; f_q= 901 MHz.

Fig.9 Gain as a function of load power (PEP),

typical values.

Fig.10 Load power (PEP) as a function of drive

power (PEP), typical values.

MRA560

0

handbook, halfpage

d , d

3

5

(dB)

−10

−20

−30

−40

−50

−60

d

3

5

−70

0

4

8

12

P

(W)

L(PEP)

Class-A operation; V_CE= 12 V; I_C= 1.3 A;

f_p= 900 MHz; f_q= 901 MHz.

Fig.11 Intermodulation products as a function of

load power (PEP), typical values.

March 1993

7

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

handbook, full pagewidth

C6

L4 L5

C8

C9

C5

L3

DUT

L1

L2

L6

L7

C12

C11

C1

50 Ω

C2

C3

C4

C7

C10

L9

L8

C13

C16

R1

L10

L11

R2

C14

C15

V

bias

+V

CC

MBC797

Fig.12 Class-A and class-AB test circuit at f = 900 MHz.

March 1993

8

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

List of components (see test circuit)

COMPONENT

C1, C12

DESCRIPTION

VALUE

33 pF

DIMENSIONS

CATALOGUE NO.

multilayer ceramic chip capacitor

(note 1)

C2, C3, C10, C11

C4, C5

ﬁlm dielectric trimmer

1.4 to 5.5 pF

4.7 pF

2222 809 09001

multilayer ceramic chip capacitor

(note 1)

C6, C7

C8, C9

C13

multilayer ceramic chip capacitor

(note 1)

5.6 pF

3.3 pF

10 pF

multilayer ceramic chip capacitor

(note 1)

multilayer ceramic chip capacitor

(note 1)

C14

C15

electrolytic capacitor

6.8 µF, 63 V

multilayer ceramic chip capacitor

(note 1)

330 pF

C16

multilayer ceramic chip capacitor

stripline (note 2)

100 nF

2222 852 47104

L1, L7

50 Ω

length 29 mm;

width 2.4 mm

L2

stripline (note 2)

50 Ω

length 6 mm;

width 2.4 mm

L3

42.7 Ω

50 Ω

length 13.1 mm;

width 3 mm

L4

length 4.4 mm;

width 3 mm

L5

length 4.6 mm;

width 3 mm

L6

length 7 mm;

width 2.4 mm

L8

4 turns closely wound enamelled

0.4 mm copper wire

60 nH

45 nH

int. dia 3 mm;

leads 2 × 5 mm

L9

4 turns enamelled 1 mm copper

wire

int. dia. 4 mm;

leads 2 × 5 mm

L10, L11

grade 3B Ferroxcube wideband HF

choke

4312 020 36642

R1, R2

metal ﬁlm resistor

10 Ω, 0.25 W

Notes

1. American Technical Ceramics type 100A or capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε_r= 2.2),

thickness ¹⁄₃₂inch.

March 1993

9

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

124 mm

handbook, full pagewidth

80 mm

MBC798

V

CC

handbook, full pagewidth

bias

L11

R2

C14

L10

R1

C13

C6

C15

C16

L1

L9

C8

L8

L3

C5

L2

L4

C12

C1

C2

L7

L6

L5

C9

C3

C4

C7

C10

C11

MBC799

The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched

and serves as a ground plane. Earth connections from the component side to the ground plane are made by

fixing screws and copper straps under the emitter leads.

Fig.13 Printed circuit board and component layout for 900 MHz test circuit.

10

March 1993

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

MRA548

MRA561

5

handbook, halfpage

Z

L

i

(Ω)

4

R

X

x

r

L

i

3

2

1

3

2

1

i

L

0

840

0

840

880

920

960

880

920

960

f (MHz)

Class-AB operation; V_CE= 12.5 V; I_CQ= 10 mA;

P_L= 12 W; T_h= 25 °C.

Fig.14 Input impedance (series components) as a

function of frequency, typical values.

Fig.15 Load impedance (series components) as a

function of frequency, typical values.

MRA556

10

handbook, halfpage

G

p

(dB)

8

6

4

2

handbook, halfpage

Z

i

Z

MBA451

L

0

840

880

920

960

f (MHz)

Class-AB operation; V_CE= 12.5 V; I_CQ= 10 mA;

P_L= 12 W; T_h= 25 °C.

Fig.17 Power gain as a function of frequency,

typical values.

Fig.16 Definition of transistor impedance.

March 1993

11

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

MRA547

MRA549

5

handbook, halfpage

Z

L

i

(Ω)

R

X

L

4

x

r

i

L

3

2

1

0

3

2

1

0

840

880

920

960

880

920

960

f (MHz)

Class-A operation; V_CE= 12 V; I_C= 1.3 A;

T_h= 25 °C.

Fig.18 Input impedance (series components) as a

function of frequency, typical values.

Fig.19 Load impedance (series components) as a

function of frequency, typical values.

MRA557

14

handbook, halfpage

G

p

(dB)

12

8

4

0

handbook, halfpage

Z

i

Z

MBA451

L

840

880

920

960

f (MHz)

Class-A operation; V_CE= 12 V; I_C= 1.3 A;

T_h= 25 °C.

Fig.21 Power gain as a function of frequency,

typical values.

Fig.20 Definition of transistor impedance.

March 1993

12

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads

SOT171A

D

A

F

B

D

1

U

1

q

C

w

M

H

1

C

2

c

b

1

2

1

4

6

E

H

E

U

1

2

3

5

w

p

A

M

A

B

1

Q

w

b

M

3

e

0

5

10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

c

A

b

D

E

e

F

H

p

Q

q

U

w

3

UNIT

1

2

1

2

2.15 3.20

1.85 2.89

6.81

6.07

9.25 9.30 5.95 6.00

9.04 8.99 5.74 5.70

3.05 11.31 9.27 3.43 4.32

2.54 10.54 9.01 3.17 4.11

24.90 6.00

24.63 5.70

0.16

0.07

18.42

0.725

0.51 1.02 0.26

0.02 0.04 0.01

mm

3.58

0.085 0.126

0.073 0.114

0.268

0.239

0.364 0.366 0.234 0.236

0.356 0.354 0.226 0.224

0.120 0.445

0.100 0.415

0.135 0.170

0.125 0.162

0.236

0.224

0.006

0.003

0.365

0.355

0.980

0.970

inches

0.140

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SOT171A

97-06-28

March 1993

13

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV193

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

March 1993

14

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