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    产品型号BLV193的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    BLV193  
    UHF power transistor  
    March 1993  
    Product specification  
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    FEATURES  
    QUICK REFERENCE DATA  
    RF performance at Th = 25 °C in a common emitter test circuit.  
    • Emitter ballasting resistors for an  
    optimum temperature profile  
    dim  
    (dB)  
    (note 1)  
    MODE OF  
    OPERATION  
    f
    VCE  
    (V)  
    PL  
    (W)  
    Gp  
    (dB)  
    ηC  
    (%)  
    • Gold metallization ensures  
    excellent reliability.  
    (MHz)  
    c.w. class-AB  
    c.w. class-A  
    900  
    900  
    12.5  
    12  
    12  
    ≥ 6.5  
    ≥ 50  
    −
    DESCRIPTION  
    6 (PEP) typ. 11  
    −
    typ. −30  
    NPN silicon planar epitaxial transistor  
    intended for common emitter class-A  
    and class-AB operation in the  
    Note  
    1. 2-tone measurement, fp = 900 MHz, fq = 901 MHz.  
    900 MHz communications band.  
    PIN CONFIGURATION  
    The transistor has a SOT171 flange  
    envelope with a ceramic cap. All  
    leads are isolated from the mounting  
    base.  
    halfpage  
    PINNING - SOT171  
    c
    1
    2
    4
    6
    handbook, halfpage  
    PIN  
    DESCRIPTION  
    emitter  
    3
    5
    b
    1
    2
    3
    4
    5
    6
    emitter  
    base  
    e
    MBB012  
    collector  
    emitter  
    emitter  
    MBA931 - 1  
    Top view  
    Fig.1 Simplified outline and symbol.  
    WARNING  
    Product and environmental safety - toxic materials  
    This product contains beryllium oxide. The product is entirely safe provided  
    that the BeO disc is not damaged. All persons who handle, use or dispose of  
    this product should be aware of its nature and of the necessary safety  
    precautions. After use, dispose of as chemical or special waste according to  
    the regulations applying at the location of the user. It must never be thrown  
    out with the general or domestic waste.  
    March 1993  
    2
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    LIMITING VALUES  
    In accordance with the Absolute Maximum System (IEC 134).  
    SYMBOL  
    VCBO  
    PARAMETER  
    collector-base voltage  
    CONDITIONS  
    open emitter  
    MIN.  
    MAX.  
    36  
    UNIT  
    −
    −
    −
    −
    −
    V
    VCEO  
    VEBO  
    IC  
    collector-emitter voltage  
    emitter-base voltage  
    collector current  
    open base  
    16  
    V
    open collector  
    3
    V
    DC or average value  
    up to Tmb = 25 °C  
    3.5  
    44  
    A
    Ptot  
    Tstg  
    Tj  
    total power dissipation  
    storage temperature range  
    junction temperature  
    W
    °C  
    °C  
    −65  
    150  
    200  
    −
    MRA553  
    MRA552  
    60  
    10  
    handbook, halfpage  
    handbook, halfpage  
    P
    tot  
    I
    (W)  
    C
    o
    T
    = 25  
    C
    mb  
    (A)  
    (2)  
    (1)  
    o
    T
    = 70 C  
    h
    40  
    1
    20  
    0
    −1  
    10  
    0
    20  
    40  
    60  
    80  
    100  
    T
    120  
    2
    1
    10  
    10  
    V
    (V)  
    o
    CE  
    ( C)  
    h
    (1) Continuous operation.  
    (2) Short time operation during mismatch.  
    Fig.2 DC SOAR.  
    Fig.3 Power derating curves.  
    THERMAL RESISTANCE  
    SYMBOL  
    THERMAL  
    RESISTANCE  
    PARAMETER  
    CONDITIONS  
    Rth j-mb  
    Rth mb-h  
    from junction to mounting base  
    from mounting base to heatsink  
    Pdis = 44 W; Tmb = 25 °C  
    4.0 K/W  
    0.4 K/W  
    March 1993  
    3
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    CHARACTERISTICS  
    Tj = 25 °C unless otherwise specified.  
    SYMBOL  
    PARAMETER  
    collector-base breakdown voltage  
    CONDITIONS  
    open emitter;  
    Ic = 20 mA  
    MIN. TYP. MAX. UNIT  
    V(BR)CBO  
    36  
    16  
    3
    −
    −
    −
    −
    1
    −
    V
    V(BR)CEO  
    V(BR)EBO  
    ICES  
    collector-emitter breakdown voltage open base;  
    Ic = 40 mA  
    −
    V
    emitter-base breakdown voltage  
    collector-emitter leakage current  
    DC current gain  
    open collector;  
    IE = 0.5 mA  
    −
    V
    VCE = 16 V;  
    VBE = 0  
    −
    −
    mA  
    hFE  
    VCE = 10 V;  
    Ic = 1.2 A;  
    note 1  
    25  
    60  
    Cc  
    collector capacitance  
    VCB = 12.5 V;  
    IE = Ie = 0;  
    f = 1 MHz  
    −
    −
    −
    24.5  
    13  
    2
    −
    −
    −
    pF  
    pF  
    pF  
    Cre  
    feedback capacitance  
    VCE = 12.5 V;  
    Ic = 0;  
    f = 1 MHz  
    Cc-mb  
    collector-mounting base capacitance  
    Note  
    1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0.02.  
    March 1993  
    4
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    MRA559  
    MRA546  
    100  
    50  
    handbook, halfpage  
    handbook, halfpage  
    C
    c
    h
    FE  
    (pF)  
    40  
    80  
    V
    = 12.5 V  
    10 V  
    CE  
    60  
    40  
    20  
    0
    30  
    20  
    10  
    0
    0
    4
    8
    12  
    16  
    0
    2
    4
    6
    I
    (A)  
    V
    (V)  
    C
    CB  
    IE = ie = 0; f = 1 MHz.  
    Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0.02.  
    Fig.4 DC current gain as a function of collector  
    current, typical values.  
    Fig.5 Collector capacitance as a function of  
    collector-base voltage, typical values.  
    MRA554  
    40  
    handbook, halfpage  
    C
    re  
    (pF)  
    30  
    20  
    10  
    0
    0
    4
    8
    12  
    16  
    V
    (V)  
    CE  
    f = 1 MHz.  
    Fig.6 Feedback capacitance as a function of  
    collector-emitter voltage, typical values.  
    March 1993  
    5
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    APPLICATION INFORMATION  
    RF performance at Th = 25 °C in a common emitter test circuit; Rth j-mb = 0.4 K/W.  
    dim  
    (dB)  
    (note 1)  
    f
    VCE  
    (V)  
    ICQ  
    (A)  
    PL  
    (W)  
    GP  
    (dB)  
    ηc  
    (%)  
    MODE OF OPERATION  
    (MHz)  
    c.w. class-AB  
    900  
    900  
    12.5  
    12  
    0.01  
    1.3  
    12  
    ≥ 6.5  
    typ. 7.5  
    > 50  
    typ. 60  
    −
    c.w. class-A  
    6 (PEP) typ. 11  
    −
    typ. −30  
    Note  
    1. 2-tone measurement, fp = 900 MHz, fq = 901 MHz.  
    MRA551  
    MRA555  
    100  
    16  
    10  
    handbook, halfpage  
    handbook, halfpage  
    η
    G
    C
    (%)  
    80  
    P
    p
    L
    (dB)  
    8
    (W)  
    G
    p
    12  
    60  
    40  
    20  
    0
    6
    4
    2
    η
    C
    8
    4
    0
    0
    0
    0
    1
    2
    3
    4
    4
    8
    12  
    16  
    P
    (W)  
    P
    (W)  
    D
    L
    Class-AB operation; VCE = 12.5 V; f = 900 MHz;  
    ICQ = 10 mA.  
    Class-AB operation; VCE = 12.5 V; f = 900 MHz;  
    ICQ = 10 mA.  
    Fig.7 Gain and efficiency as functions of load  
    power, typical values.  
    Fig.8 Load power as a function of drive power,  
    typical values.  
    Ruggedness in class-AB operation  
    The BLV193 is capable of withstanding a load mismatch  
    corresponding to VSWR = 10:1 through all phases under  
    the following conditions:  
    VCE = 15.5 V, f = 900 MHz,  
    Th = 25 °C, Rth j-mb = 0.4 K/W, and  
    rated output power.  
    March 1993  
    6
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    MRA558  
    MRA550  
    16  
    12  
    handbook, halfpage  
    handbook, halfpage  
    P
    L(PEP)  
    (W)  
    10  
    G
    p
    (dB)  
    12  
    8
    6
    4
    2
    8
    4
    0
    0
    0
    0.2  
    0.4  
    0.6  
    0.8  
    1
    0
    4
    8
    12  
    P
    (W)  
    L(PEP)  
    P
    (W)  
    D(PEP)  
    Class-A operation; VCE = 12 V; IC = 1.3 A;  
    fp = 900 MHz; fq = 901 MHz.  
    Class-A operation; VCE = 12 V; IC = 1.3 A;  
    fp = 900 MHz; fq = 901 MHz.  
    Fig.9 Gain as a function of load power (PEP),  
    typical values.  
    Fig.10 Load power (PEP) as a function of drive  
    power (PEP), typical values.  
    MRA560  
    0
    handbook, halfpage  
    d , d  
    3
    5
    (dB)  
    −10  
    −20  
    −30  
    −40  
    −50  
    −60  
    d
    d
    3
    5
    −70  
    0
    4
    8
    12  
    P
    (W)  
    L(PEP)  
    Class-A operation; VCE = 12 V; IC = 1.3 A;  
    fp = 900 MHz; fq = 901 MHz.  
    Fig.11 Intermodulation products as a function of  
    load power (PEP), typical values.  
    March 1993  
    7
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    C6  
    L4 L5  
    C8  
    C9  
    C5  
    L3  
    DUT  
    L1  
    L2  
    L6  
    L7  
    C12  
    C11  
    C1  
    50 Ω  
    50 Ω  
    C2  
    C3  
    C4  
    C7  
    C10  
    L9  
    L8  
    C13  
    C16  
    R1  
    L10  
    L11  
    R2  
    C14  
    C15  
    V
    bias  
    +V  
    CC  
    MBC797  
    Fig.12 Class-A and class-AB test circuit at f = 900 MHz.  
    March 1993  
    8
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    List of components (see test circuit)  
    COMPONENT  
    C1, C12  
    DESCRIPTION  
    VALUE  
    33 pF  
    DIMENSIONS  
    CATALOGUE NO.  
    multilayer ceramic chip capacitor  
    (note 1)  
    C2, C3, C10, C11  
    C4, C5  
    film dielectric trimmer  
    1.4 to 5.5 pF  
    4.7 pF  
    2222 809 09001  
    multilayer ceramic chip capacitor  
    (note 1)  
    C6, C7  
    C8, C9  
    C13  
    multilayer ceramic chip capacitor  
    (note 1)  
    5.6 pF  
    3.3 pF  
    10 pF  
    multilayer ceramic chip capacitor  
    (note 1)  
    multilayer ceramic chip capacitor  
    (note 1)  
    C14  
    C15  
    electrolytic capacitor  
    6.8 µF, 63 V  
    multilayer ceramic chip capacitor  
    (note 1)  
    330 pF  
    C16  
    multilayer ceramic chip capacitor  
    stripline (note 2)  
    100 nF  
    2222 852 47104  
    L1, L7  
    50 Ω  
    length 29 mm;  
    width 2.4 mm  
    L2  
    stripline (note 2)  
    stripline (note 2)  
    stripline (note 2)  
    stripline (note 2)  
    stripline (note 2)  
    50 Ω  
    length 6 mm;  
    width 2.4 mm  
    L3  
    42.7 Ω  
    42.7 Ω  
    42.7 Ω  
    50 Ω  
    length 13.1 mm;  
    width 3 mm  
    L4  
    length 4.4 mm;  
    width 3 mm  
    L5  
    length 4.6 mm;  
    width 3 mm  
    L6  
    length 7 mm;  
    width 2.4 mm  
    L8  
    4 turns closely wound enamelled  
    0.4 mm copper wire  
    60 nH  
    45 nH  
    int. dia 3 mm;  
    leads 2 × 5 mm  
    L9  
    4 turns enamelled 1 mm copper  
    wire  
    int. dia. 4 mm;  
    leads 2 × 5 mm  
    L10, L11  
    grade 3B Ferroxcube wideband HF  
    choke  
    4312 020 36642  
    R1, R2  
    metal film resistor  
    10 Ω, 0.25 W  
    Notes  
    1. American Technical Ceramics type 100A or capacitor of the same quality.  
    2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),  
    thickness 1⁄32 inch.  
    March 1993  
    9
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    124 mm  
    80 mm  
    MBC798  
    V
    V
    CC  
    bias  
    L11  
    R2  
    C14  
    L10  
    R1  
    C13  
    C6  
    C15  
    C16  
    L1  
    L9  
    C8  
    L8  
    L3  
    C5  
    L2  
    L4  
    C12  
    C1  
    C2  
    L7  
    L6  
    L5  
    C9  
    C3  
    C4  
    C7  
    C10  
    C11  
    MBC799  
    The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched  
    and serves as a ground plane. Earth connections from the component side to the ground plane are made by  
    fixing screws and copper straps under the emitter leads.  
    Fig.13 Printed circuit board and component layout for 900 MHz test circuit.  
    10  
    March 1993  
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    MRA548  
    MRA561  
    5
    5
    handbook, halfpage  
    handbook, halfpage  
    Z
    Z
    L
    i
    (Ω)  
    (Ω)  
    4
    4
    R
    X
    x
    r
    L
    i
    3
    2
    1
    3
    2
    1
    i
    L
    0
    840  
    0
    840  
    880  
    920  
    960  
    880  
    920  
    960  
    f (MHz)  
    f (MHz)  
    Class-AB operation; VCE = 12.5 V; ICQ = 10 mA;  
    Class-AB operation; VCE = 12.5 V; ICQ = 10 mA;  
    PL = 12 W; Th = 25 °C.  
    PL = 12 W; Th = 25 °C.  
    Fig.14 Input impedance (series components) as a  
    function of frequency, typical values.  
    Fig.15 Load impedance (series components) as a  
    function of frequency, typical values.  
    MRA556  
    10  
    handbook, halfpage  
    G
    p
    (dB)  
    8
    6
    4
    2
    handbook, halfpage  
    Z
    i
    Z
    MBA451  
    L
    0
    840  
    880  
    920  
    960  
    f (MHz)  
    Class-AB operation; VCE = 12.5 V; ICQ = 10 mA;  
    PL = 12 W; Th = 25 °C.  
    Fig.17 Power gain as a function of frequency,  
    typical values.  
    Fig.16 Definition of transistor impedance.  
    March 1993  
    11  
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    MRA547  
    MRA549  
    5
    5
    handbook, halfpage  
    handbook, halfpage  
    Z
    Z
    L
    i
    (Ω)  
    (Ω)  
    R
    X
    L
    4
    4
    x
    r
    i
    i
    L
    3
    2
    1
    0
    3
    2
    1
    0
    840  
    840  
    880  
    920  
    960  
    880  
    920  
    960  
    f (MHz)  
    f (MHz)  
    Class-A operation; VCE = 12 V; IC = 1.3 A;  
    Class-A operation; VCE = 12 V; IC = 1.3 A;  
    Th = 25 °C.  
    Th = 25 °C.  
    Fig.18 Input impedance (series components) as a  
    function of frequency, typical values.  
    Fig.19 Load impedance (series components) as a  
    function of frequency, typical values.  
    MRA557  
    14  
    handbook, halfpage  
    G
    p
    (dB)  
    12  
    8
    4
    0
    handbook, halfpage  
    Z
    i
    Z
    MBA451  
    L
    840  
    880  
    920  
    960  
    f (MHz)  
    Class-A operation; VCE = 12 V; IC = 1.3 A;  
    Th = 25 °C.  
    Fig.21 Power gain as a function of frequency,  
    typical values.  
    Fig.20 Definition of transistor impedance.  
    March 1993  
    12  
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    PACKAGE OUTLINE  
    Flanged ceramic package; 2 mounting holes; 6 leads  
    SOT171A  
    D
    A
    F
    B
    D
    1
    U
    1
    q
    C
    w
    M
    H
    1
    C
    2
    c
    b
    1
    2
    1
    4
    6
    E
    H
    E
    U
    1
    2
    3
    5
    w
    p
    A
    M
    A
    B
    1
    Q
    w
    b
    M
    3
    e
    0
    5
    10 mm  
    scale  
    DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
    c
    A
    b
    b
    D
    D
    E
    E
    e
    F
    H
    H
    p
    Q
    q
    U
    U
    w
    w
    w
    3
    UNIT  
    1
    1
    1
    1
    1
    2
    1
    2
    2.15 3.20  
    1.85 2.89  
    6.81  
    6.07  
    9.25 9.30 5.95 6.00  
    9.04 8.99 5.74 5.70  
    3.05 11.31 9.27 3.43 4.32  
    2.54 10.54 9.01 3.17 4.11  
    24.90 6.00  
    24.63 5.70  
    0.16  
    0.07  
    18.42  
    0.725  
    0.51 1.02 0.26  
    0.02 0.04 0.01  
    mm  
    3.58  
    0.085 0.126  
    0.073 0.114  
    0.268  
    0.239  
    0.364 0.366 0.234 0.236  
    0.356 0.354 0.226 0.224  
    0.120 0.445  
    0.100 0.415  
    0.135 0.170  
    0.125 0.162  
    0.236  
    0.224  
    0.006  
    0.003  
    0.365  
    0.355  
    0.980  
    0.970  
    inches  
    0.140  
    REFERENCES  
    JEDEC  
    EUROPEAN  
    PROJECTION  
    OUTLINE  
    VERSION  
    ISSUE DATE  
    IEC  
    EIAJ  
    SOT171A  
    97-06-28  
    March 1993  
    13  
    Philips Semiconductors  
    Product specification  
    UHF power transistor  
    BLV193  
    DEFINITIONS  
    Data Sheet Status  
    Objective specification  
    Preliminary specification  
    Product specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    March 1993  
    14  
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