BLV1N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics
( TC=25C unless otherwise noted )
Symbol
Test Conditions
Min.
Typ.
Max. Units
Parameter
BVDSS
VGS=0V, ID=250uA
Drain-Source Breakdown Voltage
600
-
-
-
V
Reference to 25
℃,
∆BVDSS
/∆TJ
Breakdown Voltage
Temperature Coefficient
-
0.6
V/℃
ID=1mA
RDS(ON)
VGS(th)
g fs
VGS=10V, ID=0.5A
Static Drain-Source On-Resistance
Gate Threshold Voltage
-
2
-
-
-
8
4
-
Ω
V
VDS=VGS, ID=250uA
VDS=15V, ID=0.5A
VDS=600V, VGS=0V
Forward Transconductance (note3)
1
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current
-
1
uA
V =480V V =0V
,
-
-
100
uA
DS
GS
Tc=125℃
IGSS
VGS= ± 20V
Gate-Source Leakage Current
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
-
-
5.9
1.4
2.4
-
±100
nA
nC
nC
nC
ns
Q
g
VDD=480V
ID=1A
VGS=10V
-
-
Q
gs
Gate-Source Charge
Gate-Drain Charge
Q
gd
(note3)
(note3)
-
t (on)
t r
t (off)
t f
Turn-on Delay Time
Turn-on Rise Time
30
60
45
75
-
VDD=300V
ID=1A
RG=25Ω
note3
-
ns
Turn-off Delay Time
Turn-off Fall Time
-
ns
-
ns
C
Input Capacitance
170
28
4
pF
pF
pF
iss
VDS=25V
VGS=0V
f = 1MHz
C
Output Capacitance
Reverse Transfer Capacitance
-
oss
C
-
rss
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
A
A
IS
Continuous Source Diode Forward Current
1
-
-
-
-
-
-
-
Pulsed Source Diode Forward Current (note1)
ISM
VSD
t r r
4
Forward On Voltage
VGS=0V, IS=1A
1.4
V
-
Reverse Recovery Time
Reverse Recovery Charge
-
-
ns
uC
VGS=0V, IS=1A(note3)
dIF/dt =100A/us
190
0.53
Qr r
Note：
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) L=25mH, Ias=1A，Vdd=50V，Rg=25Ω，staring Tj=25C
(3) Pulse width ≤ 300 us; duty cycle ≤ 2%
- 2 -
Total 6 Pages