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    产品型号BLV2045N的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    BLV2045N  
    UHF power transistor  
    Preliminary specification  
    2000 Feb 21  
    Supersedes data of 1999 May 01  
    Philips Semiconductors  
    Preliminary specification  
    UHF power transistor  
    BLV2045N  
    FEATURES  
    PINNING - SOT390A  
    • Emitter ballasting resistors for optimum temperature  
    profile  
    PIN  
    SYMBOL  
    DESCRIPTION  
    1
    2
    3
    c
    b
    e
    collector  
    • Gold metallization ensures excellent reliability  
    base  
    • Internal input and output matching for an easy design of  
    wideband circuits.  
    emitter, connected to flange  
    APPLICATIONS  
    handbook, halfpage  
    1
    • Common emitter class-AB operation in PCN and PCS  
    applications in the 1800 to 2000 MHz frequency range.  
    3
    DESCRIPTION  
    2
    NPN silicon planar UHF power transistor in a 2-lead  
    SOT390A flange package with a ceramic cap. The emitter  
    is connected to the flange.  
    Top view  
    MSA470  
    Fig.1 Simplified outline.  
    QUICK REFERENCE DATA  
    RF performance at Th = 25 °C in a common emitter test circuit.  
    MODE OF  
    OPERATION  
    f
    VCE  
    (V)  
    PL  
    (W)  
    Gp  
    (dB)  
    ηC  
    (%)  
    dim  
    (dBc)  
    (MHz)  
    CW, class-AB  
    1990  
    26  
    26  
    35  
    typ. 9.5  
    typ. 43  
    −
    2-tone, class-AB  
    f1 = 1990.0; f2 = 1990.1  
    35 (PEP)  
    ≥9.5  
    ≥33  
    ≤−30  
    LIMITING VALUES  
    In accordance with the Absolute Maximum Rating System (IEC 134).  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    open emitter  
    MIN.  
    MAX.  
    65  
    UNIT  
    VCBO  
    VCEO  
    VEBO  
    IC  
    collector-base voltage  
    collector-emitter voltage  
    emitter-base voltage  
    −
    −
    −
    −
    −
    −
    V
    open base  
    27  
    3
    V
    open collector  
    V
    collector current (DC)  
    average collector current  
    total power dissipation  
    storage temperature  
    4
    A
    IC(AV)  
    Ptot  
    4
    A
    Tmb = 25 °C  
    125  
    +150  
    200  
    W
    °C  
    °C  
    Tstg  
    Tj  
    −65  
    operating junction temperature  
    −
    WARNING  
    Product and environmental safety - toxic materials  
    This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.  
    All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety  
    precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of  
    the user. It must never be thrown out with the general or domestic waste.  
    2000 Feb 21  
    2
    Philips Semiconductors  
    Preliminary specification  
    UHF power transistor  
    BLV2045N  
    THERMAL CHARACTERISTICS  
    SYMBOL  
    Rth j-mb  
    PARAMETER  
    CONDITIONS  
    VALUE  
    UNIT  
    thermal resistance from junction to  
    mounting base  
    PL = 35 W; ηC = 40%; Tmb = 25 °C  
    1.4  
    K/W  
    Rth mb-h  
    thermal resistance from mounting  
    base to heatsink  
    0.4  
    K/W  
    CHARACTERISTICS  
    Tj = 25 °C unless otherwise specified.  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    MIN.  
    65  
    TYP.  
    MAX.  
    UNIT  
    V(BR)CBO  
    V(BR)CEO  
    V(BR)EBO  
    ICES  
    collector-base breakdown voltage  
    open emitter; IC = 20 mA  
    −
    −
    −
    −
    −
    −
    V
    collector-emitter breakdown voltage open base; IC = 60 mA  
    27  
    3
    −
    V
    emitter-base breakdown voltage  
    collector leakage current  
    DC current gain  
    open collector; IE = 40 mA  
    VCE = 26 V; VBE = 0  
    −
    V
    −
    4
    mA  
    hFE  
    VCE = 10 V; IC = 2 A  
    45  
    −
    100  
    −
    Cc  
    collector capacitance  
    VCB = 26 V; IE = ie = 0;  
    f = 1 MHz; note 1  
    t.b.f.  
    pF  
    pF  
    Cre  
    feedback capacitance  
    VCE = 26 V; IC = 0;  
    f = 1 MHz  
    −
    t.b.f.  
    −
    Note  
    1. Capacitance of die only.  
    APPLICATION INFORMATION  
    RF performance at Th = 25 °C in a common emitter test circuit.  
    MODE OF  
    OPERATION  
    f
    VCE  
    (V)  
    ICQ  
    (mA)  
    PL  
    (W)  
    Gp  
    (dB)  
    ηC  
    (%)  
    dim  
    (dBc)  
    (MHz)  
    CW, class-AB  
    1990  
    26  
    26  
    150  
    150  
    35  
    typ. 9.5  
    typ. 43  
    −
    2-tone, class-AB  
    f1 = 1990.0; f2 = 1990.1  
    35 (PEP)  
    ≥9.5  
    ≥33  
    ≤−30  
    typ. 10.2  
    typ. 35  
    typ. −32  
    Ruggedness in class-AB operation  
    The BLV2045N is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the  
    following conditions: f1 = 1990.0 MHz; f2 = 1990.1 MHz; VCE = 26 V; ICQ = 150 mA; PL = 35 W (PEP); Tmb = 25 °C.  
    2000 Feb 21  
    3
    Philips Semiconductors  
    Preliminary specification  
    UHF power transistor  
    BLV2045N  
    MCD881  
    MCD882  
    60  
    η
    60  
    η
    12  
    12  
    handbook, halfpage  
    G
    handbook, halfpage  
    G
    p
    p
    C
    C
    (%)  
    (%)  
    G
    p
    (dB)  
    G
    p
    (dB)  
    50  
    50  
    40  
    30  
    40  
    30  
    8
    8
    η
    C
    η
    C
    20  
    10  
    0
    20  
    10  
    0
    4
    0
    4
    0
    0
    0
    10  
    20  
    30  
    40  
    10  
    20  
    30  
    P
    40  
    P
    (W)  
    L
    (PEP) (W)  
    L
    VCE = 26 V; ICQ = 150 mA; f1 = 1990 MHz; f2 = 1990.1 MHz  
    VCE = 26 V; ICQ = 150 mA; f = 1990 MHz.  
    Fig.3 Power gain and collector efficiency as  
    functions of peak envelope load power;  
    typical values.  
    Fig.2 Power gain and collector efficiency as  
    functions of load power; typical values.  
    MCD883  
    0
    handbook, halfpage  
    d
    im  
    (dBc)  
    −20  
    d
    d
    3
    5
    −40  
    −60  
    0
    10  
    20  
    30  
    P
    40  
    (PEP) (W)  
    L
    VCE = 26 V; ICQ = 150 mA; f1 = 1990 MHz; f2 = 1990.1 MHz.  
    Fig.4 Intermodulation distortion as a function of  
    peak envelope load power; typical values.  
    2000 Feb 21  
    4
    Philips Semiconductors  
    Preliminary specification  
    UHF power transistor  
    BLV2045N  
    L13  
    R1  
    L7  
    V
    V
    bb  
    CC  
    C8  
    C9  
    C10  
    C11  
    C14  
    C15  
    C16  
    C13  
    L9  
    L12  
    C12  
    L4  
    L6  
    L8  
    L5  
    L11  
    L2  
    L3  
    L10  
    L1  
    C7  
    C2  
    50 Ω  
    input  
    50 Ω  
    output  
    C1  
    C6  
    C3  
    C4  
    C5  
    MCD884  
    Dimensions in mm.  
    The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane.  
    Earth connections from the component side to the ground plane are made by through metallization.  
    Fig.5 Class-AB test circuit for 1990 MHz.  
    2000 Feb 21  
    5
    Philips Semiconductors  
    Preliminary specification  
    UHF power transistor  
    BLV2045N  
    List of components (see Figs 5 and 6)  
    COMPONENT  
    C1  
    DESCRIPTION  
    VALUE  
    DIMENSIONS  
    Tekelec variable capacitor; type AT37281  
    multilayer ceramic chip capacitor; note1  
    multilayer ceramic chip capacitor; note 2  
    multilayer ceramic chip capacitor; note 2  
    Tekelec variable capacitor; type AT37271  
    multilayer ceramic chip capacitor; note 2  
    tantalum SMD capacitor  
    0.4 to 2.5 pF  
    30 pF  
    C2, C7  
    C3  
    2.4 pF  
    C4  
    1.8 pF  
    C5  
    0.6 to 4.5 pF  
    1.3 pF  
    C6  
    C8, C14  
    35 V; 10 µF  
    100 nF  
    C9, C10, C11,  
    C15, C16  
    multilayer ceramic chip capacitor  
    C12, C13  
    multilayer ceramic chip capacitor; note 2  
    stripline; note 3  
    20 pF  
    50 Ω  
    L1  
    L2  
    L3  
    L4  
    L5  
    L6  
    8 x 1 mm  
    stripline; note 3  
    20.5 Ω  
    29.8 Ω  
    11 Ω  
    2.5 x 3.5 mm  
    5.6 x 2.1 mm  
    2.0 x 7.4 mm  
    7.2 x 6.0 mm  
    stripline; note 3  
    stripline; note 3  
    stripline; note 3  
    13.2 Ω  
    5 turns enamelled 1 mm copper wire  
    int. dia. = 3.3 mm;  
    length = 6 mm  
    L7  
    EMI filter; type NFM61RH20T332  
    stripline; note 3  
    3300 pF  
    11.5 Ω  
    6.9 Ω  
    L8  
    6.6 x 7.1 mm  
    6.4 x 12.6 mm  
    9.9 x 1.6 mm  
    2.7 x 5.4 mm  
    L9  
    stripline; note 3  
    L10  
    L11  
    L12  
    stripline; note 3  
    35.8 Ω  
    14.4 Ω  
    stripline; note 3  
    2 turns enamelled 1 mm copper wire  
    int. dia. = 3.3 mm;  
    length = 2.5 mm  
    L13  
    R1  
    EMI filter; type NFM60RH20T152  
    chip resistor  
    1500 pF  
    2.2 Ω  
    Notes  
    1. American Technical Ceramics type 100A or capacitor of same quality.  
    2. American Technical Ceramics type 100B or capacitor of same quality.  
    3. The striplines are on a double copper-clad printed-circuit board: εr = 6.15; thickness 0.64mm.  
    2000 Feb 21  
    6
    Philips Semiconductors  
    Preliminary specification  
    UHF power transistor  
    BLV2045N  
    30  
    30  
    40  
    PH98058-inp  
    PH98058-out  
    V
    V
    C
    b
    C10  
    C11  
    C16  
    C15  
    C9  
    L6  
    L12  
    C13  
    C12  
    L5  
    C4  
    L11  
    C3  
    C7  
    C6  
    C1  
    C2  
    C5  
    PH98058-inp  
    PH98058-out  
    MCD885  
    Dimensions in mm.  
    The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane.  
    Earth connections from the component side to the ground plane are made by through metallization.  
    Fig.6 Printed-circuit board and component layout for class-AB broadband test circuit.  
    2000 Feb 21  
    7
    Philips Semiconductors  
    Preliminary specification  
    UHF power transistor  
    BLV2045N  
    MCD886  
    MCD887  
    4
    6
    handbook, halfpage  
    handbook, halfpage  
    Z
    i
    (Ω)  
    Z
    L
    (Ω)  
    r
    i
    3
    4
    Z
    L
    2
    1
    2
    0
    x
    i
    X
    L
    0
    1800  
    −2  
    1800  
    1850  
    1900  
    1950  
    2000  
    1850  
    1900  
    1950  
    2000  
    f (MHz)  
    f (MHz)  
    VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 °C.  
    VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 °C.  
    Fig.7 Input impedance as a function of frequency  
    (series components); typical values.  
    Fig.8 Load impedance as a function of frequency  
    (series components); typical values.  
    MCD888  
    60  
    η
    12  
    handbook, halfpage  
    C
    (%)  
    G
    p
    G
    p
    (dB)  
    50  
    η
    C
    40  
    30  
    8
    dbook, halfpage  
    20  
    10  
    0
    4
    Z
    i
    Z
    MBA451  
    L
    0
    1800  
    1850  
    1900  
    1950  
    2000  
    f (MHz)  
    VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 °C.  
    Fig.9 Power gain and collector efficiency as  
    functions of frequency; typical values.  
    Fig.10 Definition of transistor impedance.  
    2000 Feb 21  
    8
    Philips Semiconductors  
    Preliminary specification  
    UHF power transistor  
    BLV2045N  
    PACKAGE OUTLINE  
    Flanged ceramic package; 2 mounting holes; 2 leads  
    SOT390A  
    D
    A
    F
    B
    3
    D
    1
    U
    1
    q
    C
    c
    1
    L
    U
    2
    E
    E
    1
    A
    L
    p
    w
    1
    M
    M
    M
    B
    A
    2
    w
    b
    M
    M
    C
    Q
    2
    0
    5
    10 mm  
    scale  
    DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
    UNIT  
    mm  
    A
    b
    c
    D
    D
    E
    E
    F
    L
    p
    Q
    q
    U
    U
    w
    w
    2
    1
    1
    1
    2
    1
    5.03  
    4.22  
    3.43  
    3.17  
    2.32  
    2.00  
    19.03 6.43  
    18.77 6.17  
    5.72 0.16  
    5.46 0.10  
    8.18  
    8.08  
    8.26  
    8.00  
    6.40  
    6.30  
    6.43 1.66  
    6.17 1.39  
    6.10  
    5.33  
    14.22  
    0.560  
    0.25  
    0.51  
    0.198  
    0.166  
    0.135 0.091  
    0.125 0.079  
    0.749 0.253  
    0.739 0.243  
    0.225 0.006 0.322 0.325 0.252 0.253 0.065 0.24  
    0.215 0.004 0.318 0.315 0.248 0.243 0.055 0.21  
    inches  
    0.010 0.020  
    REFERENCES  
    EUROPEAN  
    PROJECTION  
    OUTLINE  
    VERSION  
    ISSUE DATE  
    IEC  
    JEDEC  
    EIAJ  
    SOT390A  
    99-03-29  
    2000 Feb 21  
    9
    Philips Semiconductors  
    Preliminary specification  
    UHF power transistor  
    BLV2045N  
    DEFINITIONS  
    Data Sheet Status  
    Objective specification  
    Preliminary specification  
    Product specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    2000 Feb 21  
    10  
    Philips Semiconductors  
    Preliminary specification  
    UHF power transistor  
    BLV2045N  
    NOTES  
    2000 Feb 21  
    11  
    Philips Semiconductors – a worldwide company  
    Argentina: see South America  
    Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
    Tel. +31 40 27 82785, Fax. +31 40 27 88399  
    Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,  
    Tel. +61 2 9704 8141, Fax. +61 2 9704 8139  
    New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
    Tel. +64 9 849 4160, Fax. +64 9 849 7811  
    Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
    Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210  
    Norway: Box 1, Manglerud 0612, OSLO,  
    Tel. +47 22 74 8000, Fax. +47 22 74 8341  
    Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
    220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
    Pakistan: see Singapore  
    Belgium: see The Netherlands  
    Brazil: see South America  
    Philippines: Philips Semiconductors Philippines Inc.,  
    106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
    Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
    Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
    51 James Bourchier Blvd., 1407 SOFIA,  
    Tel. +359 2 68 9211, Fax. +359 2 68 9102  
    Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,  
    Tel. +48 22 5710 000, Fax. +48 22 5710 001  
    Portugal: see Spain  
    Romania: see Italy  
    Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
    Tel. +1 800 234 7381, Fax. +1 800 943 0087  
    China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
    72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
    Tel. +852 2319 7888, Fax. +852 2319 7700  
    Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
    Tel. +7 095 755 6918, Fax. +7 095 755 6919  
    Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,  
    Colombia: see South America  
    Czech Republic: see Austria  
    Tel. +65 350 2538, Fax. +65 251 6500  
    Slovakia: see Austria  
    Slovenia: see Italy  
    Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,  
    Tel. +45 33 29 3333, Fax. +45 33 29 3905  
    South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
    2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,  
    Tel. +27 11 471 5401, Fax. +27 11 471 5398  
    Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
    Tel. +358 9 615 800, Fax. +358 9 6158 0920  
    France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
    Tel. +33 1 4099 6161, Fax. +33 1 4099 6427  
    South America: Al. Vicente Pinzon, 173, 6th floor,  
    04547-130 SÃO PAULO, SP, Brazil,  
    Tel. +55 11 821 2333, Fax. +55 11 821 2382  
    Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
    Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
    Spain: Balmes 22, 08007 BARCELONA,  
    Tel. +34 93 301 6312, Fax. +34 93 301 4107  
    Hungary: see Austria  
    Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
    Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
    India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
    254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
    Tel. +91 22 493 8541, Fax. +91 22 493 0966  
    Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
    Tel. +41 1 488 2741 Fax. +41 1 488 3263  
    Indonesia: PT Philips Development Corporation, Semiconductors Division,  
    Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
    Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
    Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
    TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874  
    Ireland: Newstead, Clonskeagh, DUBLIN 14,  
    Tel. +353 1 7640 000, Fax. +353 1 7640 200  
    Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
    209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
    Tel. +66 2 745 4090, Fax. +66 2 398 0793  
    Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
    TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
    Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,  
    ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813  
    Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),  
    Tel. +39 039 203 6838, Fax +39 039 203 6800  
    Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
    252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
    Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
    TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057  
    United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
    MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421  
    Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
    Tel. +82 2 709 1412, Fax. +82 2 709 1415  
    United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
    Tel. +1 800 234 7381, Fax. +1 800 943 0087  
    Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
    Tel. +60 3 750 5214, Fax. +60 3 757 4880  
    Uruguay: see South America  
    Vietnam: see Singapore  
    Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
    Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
    Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
    Middle East: see Italy  
    Tel. +381 11 3341 299, Fax.+381 11 3342 553  
    For all other countries apply to: Philips Semiconductors,  
    Internet: http://www.semiconductors.philips.com  
    International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
    5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
    69  
    SCA  
    © Philips Electronics N.V. 2000  
    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
    The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
    without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
    under patent- or other industrial or intellectual property rights.  
    Printed in The Netherlands  
    603516/08/pp12  
    Date of release: 2000 Feb 21  
    Document order number: 9397 750 06763  
    配单直通车
    BLV2045N产品参数
    型号:BLV2045N
    生命周期：Transferred
    包装说明：,
    Reach Compliance Code：unknown
    风险等级：5.57
    最大集电极电流 (IC)：4 A
    配置：Single
    最小直流电流增益 (hFE)：45
    最高工作温度：200 °C
    极性/信道类型：NPN
    子类别：Other Transistors
    表面贴装：YES
    Base Number Matches：1
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