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    • 北京元坤伟业科技有限公司

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    • BLW96/01112
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    产品型号BLW96/B的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    BLW96  
    HF/VHF power transistor  
    August 1986  
    Product specification  
    File under Discrete Semiconductors, SC08a  
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    conditions. Transistors are supplied  
    in matched hFE groups.  
    DESCRIPTION  
    N-P-N silicon planar epitaxial  
    The transistor has a 1⁄2" flange  
    envelope with a ceramic cap. All  
    leads are isolated from the flange.  
    transistor intended for use in class-A,  
    AB and B operated high power  
    industrial and military transmitting  
    equipment in the h.f. and v.h.f. band.  
    The transistor presents excellent  
    performance as a linear amplifier in  
    s.s.b. applications. It is resistance  
    stabilized and is guaranteed to  
    withstand severe load mismatch  
    QUICK REFERENCE DATA  
    R.F. performance up to Th = 25 °C  
    IC(ZS)  
    MODE OF  
    OPERATION  
    VCE  
    V
    f
    PL  
    W
    Gp  
    dB  
    η
    %
    d3  
    dB  
    d5  
    dB  
    (IC)  
    A
    MHz  
    s.s.b. (class-AB)  
    c.w. (class-B)  
    50  
    50  
    40  
    1,6 − 28 25 − 200 (P.E.P.)  
    >
    13,5 >  
    6,5 typ. 67  
    40(1)  
    <
    −30  
    <
    <
    −30  
    0,1  
    (6)  
    (4)  
    108  
    28  
    200  
    typ.  
    −
    −
    s.s.b. (class-A)  
    50 (P.E.P.) typ. 19  
    −
    typ. −40  
    −40  
    Note  
    1. ηdt at 200 W P.E.P.  
    PIN CONFIGURATION  
    PINNING - SOT121B.  
    PIN  
    DESCRIPTION  
    collector  
    1
    2
    3
    4
    1
    4
    handbook, halfpage  
    emitter  
    base  
    emitter  
    2
    3
    MLA876  
    Fig.1 Simplified outline. SOT121B.  
    PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely  
    safe provided that the BeO disc is not damaged.  
    August 1986  
    2
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    RATINGS  
    Limiting values in accordance with the Absolute Maximum System (IEC 134)  
    Collector-emitter voltage (VBE = 0)  
    peak value  
    VCESM  
    VCEO  
    VEBO  
    IC(AV)  
    ICM  
    max.  
    110 V  
    55 V  
    4 V  
    Collector-emitter voltage (open base)  
    Emitter-base voltage (open collector)  
    Collector current (average)  
    max.  
    max.  
    max.  
    max.  
    max.  
    12 A  
    40 A  
    340 W  
    Collector current (peak value); f > 1 MHz  
    R.F. power dissipation (f > 1 MHz); Tmb = 45 °C  
    Storage temperature  
    Prf  
    Tstg  
    −65 to + 150 °C  
    Operating junction temperature  
    Tj  
    max.  
    200 °C  
    MGP686  
    MGP685  
    2
    10  
    400  
    handbook, halfpage  
    handbook, halfpage  
    P
    tot  
    (W)  
    I
    C
    ΙΙΙ  
    300  
    (A)  
    derate by  
    1.58 W/K  
    ΙΙ  
    Ι
    10  
    200  
    100  
    T
    = 70 °C  
    T
    = 45 °C  
    mb  
    h
    1.35 W/K  
    1
    10  
    0
    0
    2
    50  
    100  
    150  
    10  
    V
    (V)  
    T (°C)  
    h
    CE  
    I
    Continuous d.c. operation  
    II Continuous r.f. operation; f > 1 MHz  
    III Short-time operation during mismatch; f > 1 MHz  
    Fig.2 D.C. SOAR.  
    Fig.3 Power/temperature derating curves.  
    THERMAL RESISTANCE  
    (dissipation = 150 W; Tmb = 100 °C, i.e. Th = 70 °C)  
    From junction to mounting base (d.c. dissipation)  
    From junction to mounting base (r.f. dissipation)  
    From mounting base to heatsink  
    Rth j-mb(dc)  
    Rth j-mb(rf)  
    Rth mb-h  
    =
    =
    =
    0,63 K/W  
    0,45 K/W  
    0,2 K/W  
    August 1986  
    3
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    CHARACTERISTICS  
    Tj = 25 °C  
    Collector-emitter breakdown voltage  
    V
    BE = 0; IC = 50 mA  
    V(BR)CES  
    V(BR)CEO  
    V(BR)EBO  
    ICES  
    >
    >
    >
    <
    110 V  
    55 V  
    4 V  
    Collector-emitter breakdown voltage  
    open base; IC = 200 mA  
    Emitter-base breakdown voltage  
    open collector; IE = 20 mA  
    Collector cut-off current  
    VBE = 0; VCE = 55 V  
    10 mA  
    Second breakdown energy; L = 25 mH; f = 50 Hz  
    open base  
    ESBO  
    ESBR  
    >
    >
    20 mJ  
    20 mJ  
    RBE = 10 Ω  
    D.C. current gain(1)  
    typ.  
    15 to  
    30  
    50  
    IC = 7 A; VCE = 5 V  
    hFE  
    D.C. current gain ratio of matched devices(1)  
    IC = 7 A; VCE = 5 V  
    hFE1/hFE2  
    ≤
    1,2  
    Collector-emitter saturation voltage(1)  
    IC = 20 A; IB = 4 A  
    VCEsat  
    typ.  
    1,9 V  
    Transition frequency at f = 100 MHz(2)  
    −IE = 7 A; VCB = 45 V  
    fT  
    fT  
    typ.  
    typ.  
    235 MHz  
    245 MHz  
    −IE = 20 A; VCB = 45 V  
    Collector capacitance at f = 1 MHz  
    IE = Ie = 0; VCB = 50 V  
    Feedback capacitance at f = 1 MHz  
    IC = 150 mA; VCE = 50 V  
    Cc  
    typ.  
    typ.  
    typ.  
    280 pF  
    170 pF  
    4,4 pF  
    Cre  
    Ccf  
    Collecting-flange capacitance  
    Notes  
    1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.  
    2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.  
    August 1986  
    4
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    MGP687  
    MGP688  
    10  
    50  
    handbook, halfpage  
    handbook, halfpage  
    h
    FE  
    −I  
    E
    V
    = 45 V  
    CE  
    (A)  
    40  
    30  
    20  
    10  
    T
    = 70 °C  
    25 °C  
    15 V  
    5 V  
    h
    1
    −1  
    10  
    −2  
    10  
    0
    0
    500  
    750  
    1000  
    1250  
    10  
    20  
    30  
    I
    (A)  
    C
    V
    (mV)  
    BE  
    Fig.4 Typical values; VCE = 40 V.  
    Fig.5 Typical values; Tj = 25 °C.  
    MGP689  
    MGP690  
    300  
    1000  
    handbook, halfpage  
    handbook, halfpage  
    C
    c
    (pF)  
    f
    T
    V
    = 45 V  
    15 V  
    CB  
    (MHz)  
    750  
    200  
    5 V  
    500  
    250  
    typ  
    100  
    0
    0
    0
    0
    10  
    20  
    30  
    25  
    50  
    75  
    −I (A)  
    V
    (V)  
    E
    CB  
    Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.  
    Fig.7 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.  
    August 1986  
    5
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    APPLICATION INFORMATION  
    R.F. performance in s.s.b. class-AB operation (linear power amplifier)  
    VCE = 50 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz  
    (1)  
    (1)  
    OUTPUT POWER  
    Gp  
    ηdt (%)  
    IC (A)  
    d3  
    d5  
    IC(ZS)  
    W
    dB  
    at 200 W (P.E.P.)  
    dB  
    dB  
    A
    25 to 200 (P.E.P.)  
    > 13,5  
    > 40  
    < 5,0  
    < −30  
    < −30  
    0,1  
    C10  
    C11  
    L4  
    C1  
    C2  
    50 Ω  
    L1  
    R1  
    50 Ω  
    T.U.T.  
    C12  
    C13  
    C6  
    C14  
    L2  
    R2  
    L3  
    C4  
    C3  
    C5  
    C7  
    temperature  
    C8  
    C9  
    compensated bias  
    (R < 0.1 Ω)  
    i
    +V  
    CC  
    MGP691  
    Fig.8 Test circuit; s.s.b. class-AB.  
    List of components:  
    C1 = C4 = C10 = C14 = 100 pF film dielectric trimmer  
    C2 = 27 pF ceramic capacitor (500 V)  
    C3 = 270 pF polysterene capacitor (630 V)  
    C5 = C7 = C8 = 220 nF multilayer ceramic chip capacitor  
    C6 = 27 pF multilayer ceramic chip capacitor (500 V; ATC(2))  
    C9 = 47 µF/63 V electrolytic capacitor  
    C11 = 2 × 36 pF multilayer ceramic chip capacitors (500 V; ATC(2)) in parallel  
    C12 = 2 × 43 pF multilayer ceramic chip capacitors (500 V; ATC(2)) in parallel  
    C13 = 43 pF multilayer ceramic chip capacitor (500 V; ATC(2))  
    L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2 × 5 mm  
    L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)  
    L3 = 150 nH; 5 turns Cu wire (2,0 mm); int. dia. 10,0 mm; length 18,7 mm; leads 2 × 5 mm  
    L4 = 197 nH; 5 turns Cu wire (2,0 mm); int. dia. 12,0 mm; length 18,6 mm; leads 2 × 5 mm  
    R1 = 0,66 Ω; parallel connection of 5 × 3,3 Ω metal film resistors (PR37; ± 5%; 1,6 W each)  
    R2 = 27 Ω carbon resistor (± 5%; 0,5 W)  
    Notes  
    1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.  
    Relative to the according peak envelope powers these figures should be increased by 6 dB.  
    2. ATC means American Technical Ceramics.  
    August 1986  
    6
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    MGP692  
    MGP693  
    −25  
    100  
    20  
    handbook, halfpage  
    handbook, halfpage  
    η
    G
    p
    dt  
    (%)  
    (dB)  
    d , d  
    3
    5
    G
    p
    15  
    75  
    (dB)  
    −35  
    50  
    25  
    10  
    5
    d
    d
    3
    η
    dt  
    5
    −45  
    0
    0
    0
    300  
    0
    100  
    200  
    300  
    100  
    200  
    P.E.P. (W)  
    P.E.P. (W)  
    VCE = 50 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;  
    VCE = 50 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;  
    f2 = 28,001 MHz; Th = 25 °C; typical values.  
    f2 = 28,001 MHz; Th = 25 °C; typical values.  
    Fig.9 Intermodulation distortion as a function of  
    output power.(1)  
    Fig.10 Double-tone efficiency and power gain as a  
    function of output power.  
    Ruggedness  
    The BLW96 is capable of withstanding full load mismatch  
    (VSWR = 50 through all phases) up to 150 W (P.E.P.) or a  
    load mismatch (VSWR = 5 through all phases) up to  
    200 W (P.E.P.) under the following conditions:  
    VCE = 45 V; f = 28 MHz; Th = 70 °C; Rth mb-h = 0,2 K/W.  
    August 1986  
    7
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    MGP694  
    MGP695  
    30  
    4
    handbook, halfpage  
    andbook, halfpage  
    r , −x  
    i
    i
    G
    p
    (dB)  
    r
    i
    (Ω)  
    3
    20  
    −x  
    i
    2
    1
    0
    10  
    r
    i
    −x  
    i
    0
    2
    2
    1
    10  
    10  
    1
    10  
    10  
    f (MHz)  
    f (MHz)  
    VCE = 50 V; IC(ZS) = 0,1 A; PL = 200 W (P.E.P.);  
    VCE = 50 V; IC(ZS) = 0,1 A; PL = 200 W (P.E.P.);  
    Th = 25 °C; ZL = 5 Ω; neutralizing capacitor: 47 pF  
    Th = 25 °C; ZL = 5 Ω; neutralizing capacitor: 47 pF  
    Fig.12 Input impedance (series components) as a  
    function of frequency.  
    Fig.11 Power gain as a function of frequency.  
    Figs 11 and 12 are typical curves and hold for one  
    transistor of a push-pull amplifier with cross-neutralization  
    in s.s.b. class-AB operation.  
    August 1986  
    8
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)  
    Th = 25 °C  
    f (MHz)  
    VCE (V)  
    PL (W)  
    PS (W)  
    Gp (dB)  
    IC (A)  
    η (%)  
    108  
    50  
    200  
    typ. 45  
    typ. 6,5  
    typ. 6  
    typ. 67  
    MGP696  
    MGP697  
    400  
    10  
    100  
    handbook, halfpage  
    handbook, halfpage  
    P
    η
    (%)  
    G
    p
    (dB)  
    L
    (W)  
    300  
    7.5  
    75  
    50  
    25  
    0
    G
    p
    η
    typ  
    200  
    100  
    5
    2.5  
    0
    0
    0
    0
    25  
    50  
    75  
    100  
    200  
    300  
    P
    (W)  
    P (W)  
    L
    S
    Fig.13 VCE = 50 V; f = 108 MHz; Th = 25 °C.  
    Fig.14 VCE = 50 V; f = 108 MHz; Th = 25 °C;  
    typical values.  
    August 1986  
    9
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    MGP698  
    MGP699  
    1
    6
    handbook, halfpage  
    handbook, halfpage  
    r , x  
    R , X  
    i
    i
    L
    L
    4
    (Ω)  
    (Ω)  
    R
    X
    L
    0.5  
    r
    i
    L
    x
    i
    2
    0
    0
    −0.5  
    25  
    75  
    125  
    25  
    75  
    125  
    f (MHz)  
    f (MHz)  
    Typical values; VCE = 50 V; PL = 200 W; Th = 25 °C;  
    Typical values; VCE = 50 V; PL = 200 W; Th = 25 °C;  
    class-B operation  
    class-B operation  
    Fig.15 Input impedance (series components).  
    Fig.16 Load impedance (series components).  
    MGP700  
    20  
    handbook, halfpage  
    G
    p
    (dB)  
    10  
    0
    25  
    75  
    125  
    f (MHz)  
    Typical values; VCE = 50 V; PL = 200 W; Th = 25 °C;  
    class-B operation  
    Fig.17  
    August 1986  
    10  
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    R.F. performance in s.s.b. class-A operation (linear power amplifier)  
    VCE = 40 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz  
    (1)  
    (1)  
    OUTPUT POWER  
    W
    Gp  
    dB  
    IC  
    A
    d3  
    dB  
    d5  
    dB  
    typ. 50 (P.E.P.)  
    typ. 19  
    4
    typ. −40  
    < −40  
    C9  
    L4  
    50 Ω  
    C10  
    C1  
    L1  
    50 Ω  
    T.U.T.  
    L3  
    C7  
    C8  
    L2  
    R1  
    C2  
    MGP701  
    C3  
    C5  
    C4  
    C6  
    +V  
    BB  
    +V  
    CC  
    Fig.18 Test circuit; s.s.b. class-A.  
    List of components:  
    C1 = C2 = 10 to 780 pF film dielectric trimmer  
    C3 = 220 nF polyester capacitor (100 V)  
    C4 = 100 µF/4 V electrolytic capacitor  
    C5 = 2 × 330 nF polyester capacitors (100 V) in parallel  
    C6 = 47 µF/63 V electrolytic capacitor  
    C7 = C10 = 2 × 82 pF ceramic capacitors (500 V) in parallel  
    C8 = C9 = 10 to 150 pF air dielectric trimmer  
    L1 = 45 nH; 2 turns enamelled Cu wire (1,6 mm); int. dia. 8,0 mm; length 4,0 mm; leads 2 × 3 mm  
    L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)  
    L3 = 110 nH; 4 turns enamelled Cu wire (2,0 mm); int. dia. 10,0 mm; length 8,0 mm; leads 2 × 2 mm  
    L4 = 210 nH; 5 turns enamelled Cu wire (2,0 mm); int. dia. 12,0 mm; length 10,0 mm; leads 2 × 2 mm  
    R1 = 27 Ω carbon resistor (± 5%; 0,5 W)  
    Note  
    1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.  
    Relative to the according peak envelope powers these figures should be increased by 6 dB.  
    August 1986  
    11  
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    MGP702  
    −30  
    d
    3
    (dB)  
    I
    = 3 A  
    4 A  
    5 A  
    C
    −40  
    −50  
    −60  
    0
    20  
    40  
    60  
    80  
    100  
    P.E.P. (W)  
    Fig.19 Third order intermodulation distortion as a function of output power.(1) Typical values; VCE = 40 V;  
    Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz.  
    August 1986  
    12  
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    PACKAGE OUTLINE  
    Flanged ceramic package; 2 mounting holes; 4 leads  
    SOT121B  
    D
    A
    F
    q
    C
    U
    1
    B
    c
    H
    b
    L
    w
    M
    C
    2
    4
    3
    α
    A
    D
    U
    3
    U
    p
    1
    2
    w
    M
    A
    B
    1
    1
    2
    H
    Q
    0
    5
    10 mm  
    scale  
    DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
    c
    A
    b
    D
    D
    F
    H
    L
    p
    Q
    q
    U
    U
    U
    3
    w
    w
    2
    α
    UNIT  
    1
    1
    2
    1
    5.82  
    5.56  
    12.83  
    12.57  
    7.27  
    6.17  
    12.86  
    12.59  
    2.67 28.45 7.93  
    2.41 25.52 6.32  
    3.30  
    3.05  
    4.45  
    3.91  
    24.90 6.48 12.32  
    24.63 6.22 12.06  
    0.16  
    0.10  
    18.42  
    0.725  
    1.02  
    0.51  
    0.02 0.04  
    mm  
    45°  
    0.229  
    0.219  
    0.505  
    0.495  
    0.286  
    0.243  
    0.506  
    0.496  
    0.105 1.120 0.312 0.130  
    0.095 1.005 0.249 0.120  
    0.255 0.485  
    0.245 0.475  
    0.006  
    0.004  
    0.175  
    0.154  
    0.98  
    0.97  
    inches  
    REFERENCES  
    EUROPEAN  
    PROJECTION  
    OUTLINE  
    VERSION  
    ISSUE DATE  
    IEC  
    JEDEC  
    EIAJ  
    SOT121B  
    97-06-28  
    August 1986  
    13  
    Philips Semiconductors  
    Product specification  
    HF/VHF power transistor  
    BLW96  
    DEFINITIONS  
    Data Sheet Status  
    Objective specification  
    Preliminary specification  
    Product specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    August 1986  
    14  
    配单直通车
    BLW97产品参数
    型号:BLW97
    生命周期：Transferred
    IHS 制造商：PHILIPS SEMICONDUCTORS
    包装说明：,
    Reach Compliance Code：unknown
    风险等级：5.81
    最大集电极电流 (IC)：15 A
    配置：Single
    最小直流电流增益 (hFE)：15
    最高工作温度：200 °C
    极性/信道类型：NPN
    最大功率耗散 (Abs)：190 W
    子类别：Other Transistors
    表面贴装：NO
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