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产品型号BLA1011-200R的Datasheet PDF文件预览

BLA1011-200R; BLA1011S-200R  
Avionics LDMOS transistors  
Rev. 01 — 23 February 2010  
Product data sheet  
1. Product profile  
1.1 General description  
200 W LDMOS avionics power transistor for transmitter applications at frequencies from  
1030 MHz to 1090 MHz.  
Table 1.  
Typical performance  
RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA;  
typical values.  
Mode of operation  
Conditions  
VDS  
(V)  
PL  
(W)  
Gp  
(dB) (%)  
ηD  
tr  
(ns)  
tf  
(ns)  
Pulsed class-AB:  
1030 MHz to 1090 MHz  
tp = 50 μs; δ = 2 %  
tp = 128 μs; δ = 2 %  
tp = 340 μs; δ = 1 %  
36  
36  
36  
200  
250  
250  
15  
14  
14  
50  
50  
50  
35  
35  
35  
6
6
6
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features and benefits  
„ Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz,  
a supply voltage of 36 V and an IDq of 150 mA:  
‹ Load power 200 W  
‹ Gain 13 dB  
‹ Efficiency 45 %  
‹ Rise time 50 ns  
‹ Fall time 50 ns  
„ High power gain  
„ Easy power control  
„ Excellent ruggedness  
„ Source on mounting flange eliminates DC isolators, reducing common mode  
inductance  
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
1.3 Applications  
„ Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.  
2. Pinning information  
Table 2.  
Pin  
BLA1011-200R (SOT502A)  
Pinning  
Description  
Simplified outline  
Graphic symbol  
1
2
3
drain  
gate  
1
1
3
2
[1]  
2
source  
3
sym039  
BLA1011S-200R (SOT502B)  
1
2
3
drain  
gate  
1
1
3
2
[1]  
2
source  
3
sym039  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLA1011-200R  
BLA1011S-200R  
-
flanged LDMOST ceramic package; 2 mounting holes;  
2 leads  
SOT502A  
-
earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
VGS  
Ptot  
Parameter  
Conditions  
Min  
Max Unit  
drain-source voltage  
gate-source voltage  
total power dissipation  
storage temperature  
junction temperature  
-
75  
22  
700  
V
-
V
Th 25 °C; tp = 50 μs; δ = 2 %  
-
W
Tstg  
65  
+150 °C  
200 °C  
Tj  
-
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
2 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ  
Unit  
[1]  
Zth(j-h)  
transient thermal impedance from junction to Th = 25 °C  
heatsink  
0.15  
K/W  
[1] Thermal resistance is determined under RF operating conditions; tp = 50 μs, δ = 10 %.  
6. Characteristics  
Table 6.  
Characteristics  
Tj = 25 °C unless otherwise specified  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA  
75  
4
-
-
-
-
-
V
VGS(th)  
IDSS  
gate-source threshold voltage  
drain leakage current  
VDS = 10 V; ID = 300 mA  
VGS = 0 V; VDS = 36 V  
5
1
-
V
-
μA  
A
IDSX  
drain cut-off current  
VGS = VGS(th) + 9 V;  
VDS = 10 V  
45  
IGSS  
gfs  
gate leakage current  
VGS = 20 V; VDS = 0 V  
VDS = 10 V; ID = 10 A  
-
-
-
-
1
-
μA  
S
forward transconductance  
9
RDS(on) drain-source on-state resistance VGS = 9 V; ID = 10 A  
60  
-
mΩ  
7. Application information  
Table 7.  
Application information  
RF performance in a common source pulsed class-AB circuit; (tp = 50 μs; δ = 2 %); f = 1030 MHz  
and 1090 MHz; Th = 25 °C; Zth(mb-h) = 0.15 K/W; IDq = 150 mA; unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
V
VDS  
PL  
Gp  
ηD  
tr  
drain-source voltage  
-
36  
-
output power  
power gain  
drain efficiency  
rise time  
tp = 50 μs; δ = 2 %  
PL = 200 W  
-
200  
W
13  
45  
-
-
-
-
-
dB  
%
tp = 50 μs; δ = 2 %  
50  
50  
ns  
ns  
tf  
fall time  
-
7.1 Ruggedness in class-AB operation  
The BLA1011-200R and BLA1011S-200R are capable of withstanding a load mismatch  
corresponding to VSWR = 5 : 1 through all phases under the following conditions:  
V
DS = 36 V; f = 1030 MHz to 1090 MHz at rated load power.  
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
3 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
mgw033  
mgw034  
20  
80  
250  
L
(W)  
200  
P
η
G
p
(dB)  
D
(%)  
G
p
15  
10  
5
60  
150  
100  
50  
40  
20  
0
η
D
0
0
0
50  
100  
150  
200  
250  
0
2
4
6
8
P
(W)  
P
(W)  
D
L
VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 μs;  
δ = 2 %  
VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 μs;  
δ = 2 %  
Fig 1. Power gain and drain efficiency as functions  
of load power; typical values  
Fig 2. Load power as a function of drive power;  
typical values  
mgw035  
mgw036  
250  
20  
20  
G
p
P
G
p
L
(dB)  
16  
I
(W)  
(dB)  
16  
Dq  
= 1.5 A  
150 mA  
200  
G
p
150  
100  
50  
12  
8
12  
8
P
L
4
4
0
0
0
0
50  
100  
150  
200  
250  
(W)  
0
1
2
3
4
5
P
V
GS  
(V)  
L
VDS = 36 V; f = 1060 MHz; tp = 50 μs; δ = 2 %  
VDS = 36 V; IDq = 150 mA; Pi = 5.5 W; f = 1060 MHz;  
tp = 50 μs; δ = 2 %  
Fig 3. Power gain as a function of load power; typical  
values  
Fig 4. Load power and power gain as functions of  
gate-source voltage; typical values  
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
4 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
mgw037  
mgw038  
20  
80  
5
Z
i
η
(%)  
G
p
(dB)  
D
(W)  
x
i
G
p
4
15  
10  
5
60  
r
i
3
2
1
η
D
40  
20  
0
0
1020  
0
1040  
1060  
1080  
1100  
f (MHz)  
1020  
1040  
1060  
1080  
1100  
f (MHz)  
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 μs;  
δ = 2 %  
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 μs;  
δ = 2 %  
Fig 5. Power gain and drain efficiency a functions of  
frequency; typical values  
Fig 6. Input Impedance as a function of frequency  
(series components); typical values  
mgw039  
4
Z
L
(W)  
2
R
X
L
L
0
2  
4  
1020  
1040  
1060  
1080  
1100  
f (MHz)  
VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 μs; δ = 2 %  
Fig 7. Load impedance as a function of frequency (series components); typical values  
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
5 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
8. Test information  
40  
40  
60  
C6  
+
C10  
C5  
C9  
C11  
R2  
C4  
R1  
C8  
L1  
C3  
C7  
C1  
C2  
mgw032  
Dimensions in mm.  
The components are situated on one side of the copper-clad Duroid Printed-Circuit Board (PCB) with εr = 6.2 and thickness  
0.64 mm.  
The other side is unetched and serves as a ground plane.  
See Table 8 for list of components.  
Fig 8. Component layout for 1030 MHz to 1090 MHz test circuit  
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
6 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
Table 8.  
List of components (see Figure 8)  
Component Description  
Value  
Dimensions  
[1]  
[2]  
[1]  
[1]  
[1]  
C1  
multilayer ceramic chip capacitor  
39 pF  
C2  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic capacitor  
4.3 pF  
C3  
11 pF  
C4, C7  
C5  
62 pF  
100 pF  
47 μF; 20 V  
20 pF  
C6  
[2]  
[1]  
[3]  
C8  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic capacitor  
C9  
47 pF  
C10  
C11  
L1  
1.2 nF  
47 μF; 63 V  
Ω-shaped enamelled 1 mm copper wire  
metal film resistor  
length = 38 mm  
R1  
301 Ω  
18 Ω  
R2  
SMD 0508 resistor  
[1] American Technical Ceramics type 100A or capacitor of same quality.  
[2] American Technical Ceramics type 100B or capacitor of same quality.  
[3] American Technical Ceramics type 700 or capacitor of same quality.  
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
7 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
9. Package outline  
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads  
SOT502A  
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT  
1
1
1
2
1
12.83  
12.57  
3.38  
3.12  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
34.16 9.91  
33.91 9.65  
0.15  
0.08  
27.94  
1.100  
0.25  
0.01  
0.51  
0.02  
mm  
0.505  
0.495  
0.133 0.067  
0.123 0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
1.345 0.390  
1.335 0.380  
0.006  
0.003  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
99-12-28  
03-01-10  
SOT502A  
Fig 9. Package outline SOT502A  
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
8 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
Earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
UNIT  
1
1
1
2
2
12.83  
12.57  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
20.70 9.91  
20.45 9.65  
0.15  
0.08  
0.25  
mm  
0.505  
0.495  
0.067  
0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
0.815 0.390  
0.805 0.380  
0.006  
0.003  
0.010  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
03-01-10  
07-05-09  
SOT502B  
Fig 10. Package outline SOT502B  
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
9 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
10. Abbreviations  
Table 9.  
Abbreviations  
Description  
Acronym  
IDq  
quiescent drain current  
LDMOS  
LDMOST  
RF  
Laterally Diffused Metal-Oxide Semiconductor  
Laterally Diffused Metal-Oxide Semiconductor Transistor  
Radio Frequency  
SMD  
Surface Mount Device  
VSWR  
Voltage Standing-Wave Ratio  
11. Revision history  
Table 10. Revision history  
Document ID  
Release date Data sheet status  
20100223 Product data sheet  
Change notice Supersedes  
BLA1011-200R_1011S-200R_1  
-
-
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
10 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
12.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on a weakness or default in the  
customer application/use or the application/use of customer’s third party  
customer(s) (hereinafter both referred to as “Application”). It is customer’s  
sole responsibility to check whether the NXP Semiconductors product is  
suitable and fit for the Application planned. Customer has to do all necessary  
testing for the Application in order to avoid a default of the Application and the  
product. NXP Semiconductors does not accept any liability in this respect.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
12.3 Disclaimers  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Non-automotive qualified products — Unless the data sheet of an NXP  
Semiconductors product expressly states that the product is automotive  
qualified, the product is not suitable for automotive use. It is neither qualified  
nor tested in accordance with automotive testing or application requirements.  
NXP Semiconductors accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
11 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BLA1011-200R_1011S-200R_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 23 February 2010  
12 of 13  
BLA1011-200R; BLA1011S-200R  
NXP Semiconductors  
Avionics LDMOS transistors  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
1.1  
1.2  
1.3  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Application information. . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation . . . . . . . . . 3  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
3
4
5
6
7
7.1  
8
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 12  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2010.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 23 February 2010  
Document identifier: BLA1011-200R_1011S-200R_1  
配单直通车
BLA1011-200R,112产品参数
型号:BLA1011-200R,112
Brand Name:NXP Semiconductor
是否Rohs认证: 符合
生命周期:End Of Life
零件包装代码:SOT
针数:2
制造商包装代码:SOT502A
Reach Compliance Code:unknown
风险等级:5.75
Base Number Matches:1
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