BLF244芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号BLF244的概述

芯片BLF244的概述 BLF244是一款高性能的N沟道功率MOSFET，广泛用于RF（射频）功率放大器和其他高功率应用。此芯片能在高频和高功率条件下稳定工作，具有较低的导通电阻和较高的效率，使它在通信、工业和医疗设备等领域得到了广泛应用。BLF244的设计旨在提供出色的功率处理能力，同时保持较低的热阻，以减少热管理的挑战。芯片BLF244的详细参数 BLF244的技术参数主要包括以下几个方面： - 最大输出功率：该芯片能够提供高达 300W 的输出功率，非常适合大功率无线通信应用。 - 工作频率范围：BLF244可以在多达 1 GHz 的频率范围内工作，满足现代无线通信频带的需求。 - 导通电阻（Rds(on)）：在 Vgs = 10V 时，BLF244的最大导通电阻约为 0.05Ω，这使得它具有出色的导电性能，降低了功耗。 - 增益（Gain）：BLF244的增益通常在16-24...

产品型号BLF244的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

BLF244

VHF power MOS transistor

September 1992

Product speciﬁcation

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

FEATURES

PIN CONFIGURATION

• High power gain

• Low noise figure

• Easy power control

• Good thermal stability

• Withstands full load mismatch

k, halfpage

• Gold metallization ensures

excellent reliability.

MBB072

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

designed for large signal amplifier

applications in the VHF frequency

range.

MSB057

Fig.1 Simplified outline and symbol.

The transistor is encapsulated in a

4-lead SOT123 flange envelope, with

a ceramic cap. All leads are isolated

from the flange.

CAUTION

The device is supplied in an antistatic package. The gate-source input must

be protected against static charge during transport and handling.

Matched gate-source voltage (V_GS

groups are available on request.

)

WARNING

PINNING - SOT123

Product and environmental safety - toxic materials

DESCRIPTION

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

drain

source

gate

source

QUICK REFERENCE DATA

RF performance at T_h= 25 °C in a common source test circuit.

MODE OF OPERATION

(MHz)

V_DS

(V)

P_L

(W)

G_p

(dB)

η_D

(%)

CW, class-B

175

> 13

> 50

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

V_DS

PARAMETER

drain-source voltage

CONDITIONS

MIN.

MAX.

UNIT

−

±V_GS

I_D

gate-source voltage

DC drain current

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

up to T_mb= 25 °C

150

200

°C

−65

−

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

R_{th j-mb}

thermal resistance from

junction to mounting base

T_mb= 25 °C; P_tot= 38 W

4.6 K/W

R_{th mb-h}

thermal resistance from

T_mb= 25 °C; P_tot= 38 W

0.3 K/W

mounting base to heatsink

MRA919

MGP151

handbook, halfpage

tot

(W)

(A)

(1)

(2)

−1

100

150

(V)

(°C)

(1) Current is this area may be limited by R_DS(on)

(1) Short-time operation during mismatch.

(2) Continuous operation.

(2) T_mb= 25 °C.

Fig.2 DC SOAR.

Fig.3 Power/temperature derating curves.

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

V_(BR)DSS

PARAMETER

CONDITIONS

V_GS= 0; I_D= 5 mA

MIN. TYP. MAX. UNIT

drain-source breakdown voltage

drain-source leakage current

gate-source leakage current

gate-source threshold voltage

−

I_DSS

V_GS= 0; V_DS= 28 V

±V_GS= 20 V; V_DS= 0

I_D= 5 mA; V_DS= 10 V

µA

I_GSS

−

V_GS(th)

∆V_GS

4.5

100

gate-source voltage difference of I_D= 5 mA; V_DS= 10 V

matched devices

−

g_fs

forward transconductance

drain-source on-state resistance

on-state drain current

input capacitance

I_D= 0.75 A; V_DS= 10 V

0.6

−

R_DS(on)

I_DSX

C_is

I_D= 0.75 A; V_GS= 10 V

0.8

1.5

−

Ω

V_GS= 10 V; V_DS= 10 V

−

V_GS= 0; V_DS= 28 V; f = 1 MHz

−

4.5

4.3

−

C_os

C_rs

output capacitance

−

feedback capacitance

noise ﬁgure (see Fig. 13)

−

I_D= 0.5 A; V_DS= 28 V; R1 = 23 Ω;

T_h= 25 °C; f = 175 MHz;

R_{th mb-h}= 0.3 K/W

−

MGP152

MGP153

handbook, halfpage

T.C.

(mV/K)

(A)

−2

−4

−6

−8

(V)

(mA)

V_DS= 10 V.

solid line: T_j= 25 °C.

V_DS= 10 V; valid for T_j= 25 to 125 °C.

dotted line: T_j= 125 °C.

Fig.5 Drain current as a function of gate-source

voltage, typical values.

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

MGP154

MGP155

160

handbook, halfpage

(pF)

DS(on)

(Ω)

120

160

T (°C)

(V)

V_GS= 0; f = 1 MHz.

V_GS= 10 V; I_D= 0.75 A.

Fig.6 Drain-source on-state resistance as a

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

function of junction temperature, typical

values.

MGP156

handbook, halfpage

(pF)

(V)

V_GS= 0; f = 1 MHz.

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

APPLICATION INFORMATION FOR CLASS-B OPERATION

T_h= 25 °C; R_{th mb-h}= 3 K/W; unless otherwise speciﬁed.

RF performance in CW operation in a common source class-B circuit.

Z_i

(Ω)

(note 1)

V_DSI_DQ

P_L

G_P

(dB)

η_D

(%)

Z_L

(Ω)

MODE OF OPERATION

(MHz) (V) (mA) (W)

CW, class-B

175

> 13

typ. 17

> 50

typ. 65

3.0 − j4.0

6.3 + j9.8

4.5 + j3.3

46.4//46.4

100

175 12.5 25

typ. 15

typ. 60

3.0 − j4.0

Note

1. R1 included.

Ruggedness in class-B operation

The BLF244 is capable of withstanding a load mismatch

corresponding to VSWR = 50 through all phases under

the following conditions:

T_h= 25 °C; R_{th mb-h}= 0.3 K/W; at rated load power.

MGP157

MGP158

100

handbook, halfpage

(W)

(dB)

(%)

(W)

Class-B operation; V_DS= 28 V; I_DQ= 25 mA;

f = 175 MHz; T_h= 25 °C; R_{th mb-h}= 0.3 K/W.

Class-B operation; V_DS= 28 V; I_DQ= 25 mA;

f = 175 MHz; T_h= 25 °C; R_{th mb-h}= 0.3 K/W.

Fig.9 Load power as a function of input power,

typical values.

Fig.10 Power gain and efficiency as functions of

load power, typical values.

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

MGP159

MGP160

100

handbook, halfpage

(dB)

(%)

(W)

P (W)

Class-B operation; V_DS= 12.5 V; I_DQ= 25 mA;

f = 175 MHz; T_h= 25 °C; R_{th mb-h}= 0.3 K/W.

Fig.11 Load power as a function of input power,

typical values.

Fig.12 Power gain and efficiency as functions of

load power, typical values.

C14

handbook, full pagewidth

C13

C11

C12

D.U.T.

50 Ω

output

50 Ω

input

C10

MGP161

f = 175 MHz.

Fig.13 Test circuit for class-B operation.

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

List of components (class-B test circuit)

COMPONENT

C1, C12

DESCRIPTION

VALUE

680 nF

DIMENSIONS

CATALOGUE NO.

multilayer ceramic chip capacitor

(note 1)

multilayer ceramic chip capacitor

(note 1)

20 pF

C3, C4, C9

ﬁlm dielectric trimmer

5 to 60 pF

75 pF

2222 809 08003

2222 852 47103

multilayer ceramic chip capacitor

(note 1)

multilayer ceramic chip capacitor

10 nF

multilayer ceramic chip capacitor

(note 1)

100 pF

multilayer ceramic chip capacitor

(note 1)

47 pF

11 pF

C10, C11

multilayer ceramic chip capacitor

(note 1)

C13

C14

solid tantalum capacitor

2.2 µF

multilayer ceramic chip capacitor

100 nF

2222 852 47104

4 turns enamelled 1 mm copper wire 32 nH

length 6.3 mm

int. dia. 3 mm

leads 2 × 5 mm

1 turn enamelled 1 mm copper wire 12.2 nH

int. dia. 5.6 mm

leads 2 × 5 mm

L3, L4

stripline (note 2)

30 Ω

15 × 6 mm

6 turns enamelled 1 mm copper wire 119 nH

length 10.4 mm

int. dia. 6 mm

leads 2 × 5 mm

grade 3B Ferroxcube RF choke

4312 020 36640

2 turns enamelled 1 mm copper wire 19 nH

length 2.4 mm

int. dia. 3 mm

leads 2 × 5 mm

4 turns enamelled 1 mm copper wire 28.5 nH

metal ﬁlm resistor (note 3)

length 8.5 mm

int. dia. 3 mm

leads 2 × 5 mm

0.4 W metal ﬁlm resistor

1 MΩ

10 Ω

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (ε_r= 4.5),

thickness ¹⁄₁₆inch.

3. Refer to Application Information for value.

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

150

handbook, full pagewidth

strap

rivet

strap

C7 C14

C13

C11

C10

C12

MGP162

The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being

unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and

hollow rivets under the sources and around the edges to provide a direct contact between the copper on the

component side and the ground plane.

Dimensions in mm.

Fig.14 Component layout for 175 MHz class-B test circuit.

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

MGP164

MGP165

handbook, halfpage

(Ω)

100

120

100

120

f (MHz)

Class-B operation; V_DS= 28 V; I_DQ= 25 mA;

P_L= 15 W; T_h= 25 °C; R_{th mb-h}= 0.3 K/W.

Class-B operation; V_DS= 28 V; I_DQ= 25 mA;

P_L= 15 W; T_h= 25 °C; R_{th mb-h}= 0.3 K/W.

Fig.15 Input impedance as a function of frequency

(series components), typical values.

Fig.16 Load impedance as a function of frequency

(series components), typical values.

MGP166

handbook, halfpage

(dB)

100

120

f (MHz)

Class-B operation; V_DS= 28 V; I_DQ= 25 mA;

P_L= 15 W; T_h= 25 °C; R_{th mb-h}= 0.3 K/W.

Fig.17 Power gain as function of frequency, typical

values.

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads

SOT123A

10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

5.82

5.56

9.63

9.42

7.47

6.37

9.73

9.47

2.72 20.71 5.61

2.31 19.93 5.16

3.33

3.04

4.63

4.11

25.15 6.61

24.38 6.09

9.78

9.39

0.18

0.10

18.42

0.725

0.51 1.02

0.02 0.04

45°

0.229

0.219

0.397

0.371

0.294

0.251

0.383

0.373

0.107 0.815 0.221 0.131

0.091 0.785 0.203 0.120

0.26 0.385

0.24 0.370

0.007

0.004

0.182

0.162

0.99

0.96

inches

REFERENCES

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEDEC

EIAJ

SOT123A

97-06-28

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF244

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

September 1992

BLF244相关文章

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BLF244产品参数

型号:	BLF244
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
包装说明：	,
Reach Compliance Code：	unknown
风险等级：	5.91
配置：	Single
最大漏极电流 (Abs) (ID)：	3 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE
最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	38 W
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)

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