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    产品型号BLF244_15的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    BLF244  
    VHF power MOS transistor  
    September 1992  
    Product specification  
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    FEATURES  
    PIN CONFIGURATION  
    • High power gain  
    • Low noise figure  
    • Easy power control  
    • Good thermal stability  
    • Withstands full load mismatch  
    k, halfpage  
    1
    4
    • Gold metallization ensures  
    excellent reliability.  
    d
    s
    g
    MBB072  
    DESCRIPTION  
    2
    3
    Silicon N-channel enhancement  
    mode vertical D-MOS transistor  
    designed for large signal amplifier  
    applications in the VHF frequency  
    range.  
    MSB057  
    Fig.1 Simplified outline and symbol.  
    The transistor is encapsulated in a  
    4-lead SOT123 flange envelope, with  
    a ceramic cap. All leads are isolated  
    from the flange.  
    CAUTION  
    The device is supplied in an antistatic package. The gate-source input must  
    be protected against static charge during transport and handling.  
    Matched gate-source voltage (VGS  
    groups are available on request.  
    )
    WARNING  
    PINNING - SOT123  
    Product and environmental safety - toxic materials  
    PIN  
    DESCRIPTION  
    This product contains beryllium oxide. The product is entirely safe provided  
    that the BeO disc is not damaged. All persons who handle, use or dispose of  
    this product should be aware of its nature and of the necessary safety  
    precautions. After use, dispose of as chemical or special waste according to  
    the regulations applying at the location of the user. It must never be thrown  
    out with the general or domestic waste.  
    1
    2
    3
    4
    drain  
    source  
    gate  
    source  
    QUICK REFERENCE DATA  
    RF performance at Th = 25 °C in a common source test circuit.  
    f
    MODE OF OPERATION  
    (MHz)  
    VDS  
    (V)  
    PL  
    (W)  
    Gp  
    (dB)  
    ηD  
    (%)  
    CW, class-B  
    175  
    28  
    15  
    > 13  
    > 50  
    September 1992  
    2
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    LIMITING VALUES  
    In accordance with the Absolute Maximum System (IEC 134).  
    SYMBOL  
    VDS  
    PARAMETER  
    drain-source voltage  
    CONDITIONS  
    MIN.  
    MAX.  
    65  
    UNIT  
    −
    −
    −
    −
    V
    ±VGS  
    ID  
    gate-source voltage  
    DC drain current  
    20  
    3
    V
    A
    Ptot  
    Tstg  
    Tj  
    total power dissipation  
    storage temperature  
    junction temperature  
    up to Tmb = 25 °C  
    38  
    150  
    200  
    W
    °C  
    °C  
    −65  
    −
    THERMAL RESISTANCE  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    THERMAL RESISTANCE  
    Rth j-mb  
    thermal resistance from  
    junction to mounting base  
    Tmb = 25 °C; Ptot = 38 W  
    4.6 K/W  
    Rth mb-h  
    thermal resistance from  
    Tmb = 25 °C; Ptot = 38 W  
    0.3 K/W  
    mounting base to heatsink  
    MRA919  
    MGP151  
    10  
    50  
    handbook, halfpage  
    handbook, halfpage  
    P
    tot  
    (W)  
    I
    D
    40  
    (A)  
    (1)  
    30  
    20  
    10  
    (1)  
    (2)  
    (2)  
    1
    −1  
    10  
    0
    0
    2
    1
    10  
    10  
    50  
    100  
    150  
    V
    (V)  
    DS  
    T
    (°C)  
    h
    (1) Current is this area may be limited by RDS(on)  
    .
    (1) Short-time operation during mismatch.  
    (2) Continuous operation.  
    (2) Tmb = 25 °C.  
    Fig.2 DC SOAR.  
    Fig.3 Power/temperature derating curves.  
    September 1992  
    3
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    CHARACTERISTICS  
    Tj = 25 °C unless otherwise specified.  
    SYMBOL  
    V(BR)DSS  
    PARAMETER  
    CONDITIONS  
    VGS = 0; ID = 5 mA  
    MIN. TYP. MAX. UNIT  
    drain-source breakdown voltage  
    drain-source leakage current  
    gate-source leakage current  
    gate-source threshold voltage  
    65  
    −
    −
    −
    −
    −
    −
    −
    V
    IDSS  
    VGS = 0; VDS = 28 V  
    ±VGS = 20 V; VDS = 0  
    ID = 5 mA; VDS = 10 V  
    1
    mA  
    µA  
    V
    IGSS  
    −
    1
    VGS(th)  
    ∆VGS  
    2
    4.5  
    100  
    gate-source voltage difference of ID = 5 mA; VDS = 10 V  
    matched devices  
    −
    mV  
    gfs  
    forward transconductance  
    drain-source on-state resistance  
    on-state drain current  
    input capacitance  
    ID = 0.75 A; VDS = 10 V  
    0.6  
    −
    −
    −
    S
    RDS(on)  
    IDSX  
    Cis  
    ID = 0.75 A; VGS = 10 V  
    0.8  
    5
    1.5  
    −
    Ω
    VGS = 10 V; VDS = 10 V  
    −
    A
    VGS = 0; VDS = 28 V; f = 1 MHz  
    VGS = 0; VDS = 28 V; f = 1 MHz  
    VGS = 0; VDS = 28 V; f = 1 MHz  
    −
    60  
    40  
    4.5  
    4.3  
    −
    pF  
    pF  
    pF  
    dB  
    Cos  
    Crs  
    output capacitance  
    −
    −
    feedback capacitance  
    noise figure (see Fig. 13)  
    −
    −
    F
    ID = 0.5 A; VDS = 28 V; R1 = 23 Ω;  
    Th = 25 °C; f = 175 MHz;  
    Rth mb-h = 0.3 K/W  
    −
    −
    MGP152  
    MGP153  
    6
    2
    handbook, halfpage  
    handbook, halfpage  
    T.C.  
    I
    (mV/K)  
    D
    (A)  
    0
    4
    −2  
    −4  
    −6  
    2
    0
    −8  
    2
    3
    0
    4
    8
    12  
    16  
    1
    10  
    10  
    10  
    V
    (V)  
    GS  
    I
    (mA)  
    D
    VDS = 10 V.  
    solid line: Tj = 25 °C.  
    VDS = 10 V; valid for Tj = 25 to 125 °C.  
    dotted line: Tj = 125 °C.  
    Fig.5 Drain current as a function of gate-source  
    voltage, typical values.  
    Fig.4 Temperature coefficient of gate-source  
    voltage as a function of drain current, typical  
    values.  
    September 1992  
    4
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    MGP154  
    MGP155  
    2
    160  
    handbook, halfpage  
    handbook, halfpage  
    C
    (pF)  
    R
    DS(on)  
    (Ω)  
    120  
    80  
    1
    C
    C
    is  
    os  
    40  
    0
    0
    0
    0
    40  
    80  
    120  
    160  
    10  
    20  
    30  
    40  
    T (°C)  
    V
    (V)  
    DS  
    j
    VGS = 0; f = 1 MHz.  
    VGS = 10 V; ID = 0.75 A.  
    Fig.6 Drain-source on-state resistance as a  
    Fig.7 Input and output capacitance as functions  
    of drain-source voltage, typical values.  
    function of junction temperature, typical  
    values.  
    MGP156  
    20  
    handbook, halfpage  
    C
    rs  
    (pF)  
    10  
    0
    0
    20  
    40  
    V
    (V)  
    DS  
    VGS = 0; f = 1 MHz.  
    Fig.8 Feedback capacitance as a function of  
    drain-source voltage, typical values.  
    September 1992  
    5
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    APPLICATION INFORMATION FOR CLASS-B OPERATION  
    Th = 25 °C; Rth mb-h = 3 K/W; unless otherwise specified.  
    RF performance in CW operation in a common source class-B circuit.  
    Zi  
    (Ω)  
    (note 1)  
    f
    VDS IDQ  
    PL  
    GP  
    (dB)  
    ηD  
    (%)  
    ZL  
    (Ω)  
    R1  
    (Ω)  
    MODE OF OPERATION  
    (MHz) (V) (mA) (W)  
    CW, class-B  
    175  
    28  
    25  
    15  
    6
    > 13  
    typ. 17  
    > 50  
    typ. 65  
    3.0 − j4.0  
    6.3 + j9.8  
    4.5 + j3.3  
    46.4//46.4  
    100  
    175 12.5 25  
    typ. 15  
    typ. 60  
    3.0 − j4.0  
    Note  
    1. R1 included.  
    Ruggedness in class-B operation  
    The BLF244 is capable of withstanding a load mismatch  
    corresponding to VSWR = 50 through all phases under  
    the following conditions:  
    Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power.  
    MGP157  
    MGP158  
    30  
    20  
    100  
    handbook, halfpage  
    handbook, halfpage  
    G
    p
    η
    P
    L
    (W)  
    G
    p
    (dB)  
    D
    (%)  
    η
    D
    20  
    10  
    50  
    10  
    0
    0
    0
    30  
    0
    1
    2
    10  
    20  
    P
    (W)  
    IN  
    P
    (W)  
    L
    Class-B operation; VDS = 28 V; IDQ = 25 mA;  
    f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.  
    Class-B operation; VDS = 28 V; IDQ = 25 mA;  
    f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.  
    Fig.9 Load power as a function of input power,  
    typical values.  
    Fig.10 Power gain and efficiency as functions of  
    load power, typical values.  
    September 1992  
    6
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    MGP159  
    MGP160  
    20  
    20  
    100  
    handbook, halfpage  
    handbook, halfpage  
    G
    p
    η
    D
    (dB)  
    (%)  
    G
    p
    P
    L
    (W)  
    16  
    80  
    η
    D
    10  
    60  
    40  
    20  
    12  
    8
    4
    0
    0
    0
    1
    2
    4
    8
    12  
    16  
    P
    (W)  
    P (W)  
    L
    IN  
    Class-B operation; VDS = 12.5 V; IDQ = 25 mA;  
    Class-B operation; VDS = 12.5 V; IDQ = 25 mA;  
    f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.  
    f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.  
    Fig.11 Load power as a function of input power,  
    typical values.  
    Fig.12 Power gain and efficiency as functions of  
    load power, typical values.  
    +V  
    C14  
    C7  
    L6  
    G
    R3  
    +V  
    D
    R2  
    C13  
    C6  
    L5  
    C8  
    C9  
    C11  
    C12  
    L4  
    D.U.T.  
    L7  
    L8  
    50 Ω  
    output  
    C2  
    C3  
    C5  
    C4  
    R1  
    L3  
    C1  
    L1  
    L2  
    50 Ω  
    input  
    C10  
    MGP161  
    f = 175 MHz.  
    Fig.13 Test circuit for class-B operation.  
    September 1992  
    7
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    List of components (class-B test circuit)  
    COMPONENT  
    C1, C12  
    DESCRIPTION  
    VALUE  
    680 nF  
    DIMENSIONS  
    CATALOGUE NO.  
    multilayer ceramic chip capacitor  
    (note 1)  
    C2  
    multilayer ceramic chip capacitor  
    (note 1)  
    20 pF  
    C3, C4, C9  
    C5  
    film dielectric trimmer  
    5 to 60 pF  
    75 pF  
    2222 809 08003  
    2222 852 47103  
    multilayer ceramic chip capacitor  
    (note 1)  
    C6  
    C7  
    multilayer ceramic chip capacitor  
    10 nF  
    multilayer ceramic chip capacitor  
    (note 1)  
    100 pF  
    C8  
    multilayer ceramic chip capacitor  
    (note 1)  
    47 pF  
    11 pF  
    C10, C11  
    multilayer ceramic chip capacitor  
    (note 1)  
    C13  
    C14  
    L1  
    solid tantalum capacitor  
    2.2 µF  
    multilayer ceramic chip capacitor  
    100 nF  
    2222 852 47104  
    4 turns enamelled 1 mm copper wire 32 nH  
    length 6.3 mm  
    int. dia. 3 mm  
    leads 2 × 5 mm  
    L2  
    1 turn enamelled 1 mm copper wire 12.2 nH  
    int. dia. 5.6 mm  
    leads 2 × 5 mm  
    L3, L4  
    L5  
    stripline (note 2)  
    30 Ω  
    15 × 6 mm  
    6 turns enamelled 1 mm copper wire 119 nH  
    length 10.4 mm  
    int. dia. 6 mm  
    leads 2 × 5 mm  
    L6  
    L7  
    grade 3B Ferroxcube RF choke  
    4312 020 36640  
    2 turns enamelled 1 mm copper wire 19 nH  
    length 2.4 mm  
    int. dia. 3 mm  
    leads 2 × 5 mm  
    L8  
    4 turns enamelled 1 mm copper wire 28.5 nH  
    metal film resistor (note 3)  
    length 8.5 mm  
    int. dia. 3 mm  
    leads 2 × 5 mm  
    R1  
    R2  
    R3  
    0.4 W metal film resistor  
    0.4 W metal film resistor  
    1 MΩ  
    10 Ω  
    Notes  
    1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.  
    2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr = 4.5),  
    thickness 1⁄16 inch.  
    3. Refer to Application Information for value.  
    September 1992  
    8
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    150  
    strap  
    rivet  
    70  
    strap  
    L6  
    +V  
    D
    C7 C14  
    R2  
    R1  
    C13  
    C6  
    +V  
    R3  
    G
    L5  
    C2  
    C3  
    C11  
    C10  
    C5  
    C4  
    C8  
    L2  
    L7  
    L1  
    L8  
    C1  
    C12  
    L3  
    L4  
    C9  
    MGP162  
    The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being  
    unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and  
    hollow rivets under the sources and around the edges to provide a direct contact between the copper on the  
    component side and the ground plane.  
    Dimensions in mm.  
    Fig.14 Component layout for 175 MHz class-B test circuit.  
    September 1992  
    9
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    MGP164  
    MGP165  
    60  
    25  
    handbook, halfpage  
    handbook, halfpage  
    R
    L
    Z
    L
    (Ω)  
    Z
    i
    (Ω)  
    20  
    40  
    15  
    10  
    5
    x
    i
    20  
    X
    L
    r
    i
    0
    20  
    0
    20  
    40  
    60  
    80  
    100  
    120  
    40  
    60  
    80  
    100  
    120  
    f (MHz)  
    f (MHz)  
    Class-B operation; VDS = 28 V; IDQ = 25 mA;  
    PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W.  
    Class-B operation; VDS = 28 V; IDQ = 25 mA;  
    PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W.  
    Fig.15 Input impedance as a function of frequency  
    (series components), typical values.  
    Fig.16 Load impedance as a function of frequency  
    (series components), typical values.  
    MGP166  
    40  
    handbook, halfpage  
    G
    p
    (dB)  
    36  
    32  
    28  
    24  
    20  
    20  
    40  
    60  
    80  
    100  
    120  
    f (MHz)  
    Class-B operation; VDS = 28 V; IDQ = 25 mA;  
    PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W.  
    Fig.17 Power gain as function of frequency, typical  
    values.  
    September 1992  
    10  
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    PACKAGE OUTLINE  
    Flanged ceramic package; 2 mounting holes; 4 leads  
    SOT123A  
    D
    A
    F
    q
    C
    M
    B
    U
    1
    w
    2
    C
    c
    H
    b
    L
    4
    3
    A
    α
    p
    U
    3
    U
    2
    w
    M
    A
    B
    1
    1
    2
    H
    Q
    0
    5
    10 mm  
    scale  
    DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
    c
    A
    b
    D
    D
    F
    H
    L
    p
    Q
    q
    U
    U
    U
    w
    w
    2
    α
    UNIT  
    mm  
    1
    1
    2
    3
    1
    5.82  
    5.56  
    9.63  
    9.42  
    7.47  
    6.37  
    9.73  
    9.47  
    2.72 20.71 5.61  
    2.31 19.93 5.16  
    3.33  
    3.04  
    4.63  
    4.11  
    25.15 6.61  
    24.38 6.09  
    9.78  
    9.39  
    0.18  
    0.10  
    18.42  
    0.725  
    0.51 1.02  
    0.02 0.04  
    45°  
    0.229  
    0.219  
    0.397  
    0.371  
    0.294  
    0.251  
    0.383  
    0.373  
    0.107 0.815 0.221 0.131  
    0.091 0.785 0.203 0.120  
    0.26 0.385  
    0.24 0.370  
    0.007  
    0.004  
    0.182  
    0.162  
    0.99  
    0.96  
    inches  
    REFERENCES  
    EUROPEAN  
    PROJECTION  
    OUTLINE  
    VERSION  
    ISSUE DATE  
    IEC  
    JEDEC  
    EIAJ  
    SOT123A  
    97-06-28  
    September 1992  
    11  
    Philips Semiconductors  
    Product specification  
    VHF power MOS transistor  
    BLF244  
    DEFINITIONS  
    Data Sheet Status  
    Objective specification  
    Preliminary specification  
    Product specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    September 1992  
    12  
    配单直通车
    BLF245产品参数
    型号:BLF245
    是否Rohs认证： 不符合
    生命周期：Transferred
    IHS 制造商：NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
    包装说明：,
    Reach Compliance Code：unknown
    风险等级：5.76
    配置：Single
    最大漏极电流 (Abs) (ID)：6 A
    FET 技术：METAL-OXIDE SEMICONDUCTOR
    JESD-609代码：e0
    工作模式：ENHANCEMENT MODE
    最高工作温度：200 °C
    极性/信道类型：N-CHANNEL
    最大功率耗散 (Abs)：68 W
    子类别：FET General Purpose Power
    表面贴装：NO
    端子面层：Tin/Lead (Sn/Pb)
    Base Number Matches：1
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