Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
FEATURES
PIN CONFIGURATION
• High power gain
• Easy power control
• Good thermal stability
1
4
3
page
• Gold metallization ensures
excellent reliability.
d
2
g
g
2
s
5
1
DESCRIPTION
d
1
2
Top view
MSB018
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.
MBB157
Fig.1 Simplified outline and symbol.
The transistor is encapsulated in a
4-lead, SOT279 balanced flange
envelope, with a ceramic cap. The
mounting flange provides the
common source connection for the
transistors.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PINNING - SOT279
Product and environmental safety - toxic materials
PIN
DESCRIPTION
gate 1
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
1
2
3
4
5
drain 1
gate 2
drain 2
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
f
VDS
(V)
PL
(W)
GP
(dB)
ηD
(%)
MODE OF OPERATION
CW, class-B
(MHz)
175
28
30
> 14
> 55
September 1992
2